KR100720115B1 - 삼차원 지지체 및 그 제조 방법 - Google Patents
삼차원 지지체 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100720115B1 KR100720115B1 KR1020050077847A KR20050077847A KR100720115B1 KR 100720115 B1 KR100720115 B1 KR 100720115B1 KR 1020050077847 A KR1020050077847 A KR 1020050077847A KR 20050077847 A KR20050077847 A KR 20050077847A KR 100720115 B1 KR100720115 B1 KR 100720115B1
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- pattern
- temporary
- dimensional
- dimensional support
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N11/00—Carrier-bound or immobilised enzymes; Carrier-bound or immobilised microbial cells; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
- B81B2201/058—Microfluidics not provided for in B81B2201/051 - B81B2201/054
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N2535/00—Supports or coatings for cell culture characterised by topography
- C12N2535/10—Patterned coating
Abstract
Description
Claims (11)
- 입체적인 구조를 가지는 삼차원 지지체의 제조 방법으로서,기판 위에 노광공정을 이용하여 제1 포토레지스트로 제1 패턴을 형성하는 단계;상기 기판의 전면에 임시 포토레지스트를 도포하는 단계;노광공정을 이용하여 상기 제1 패턴의 상부를 표면에 노출시키는 임시 패턴을 형성하는 단계;상기 임시 패턴을 통하여 상기 제1 패턴과 접촉하는 제2 포토레지스트를 상기 기판의 전면에 도포하는 단계;상기 제2 포토레지스트를 노광하는 단계; 및상기 제2 포토레지스트를 현상하고, 상기 임시 패턴을 제거하여 상기 제2 포토레지스트로 상기 제1 패턴에 연결된 제2 패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 삼차원 지지체의 제조 방법.
- 제1항에 있어서,상기 제1 포토레지스트 및 상기 제2 포토레지스트는 네거티브 타입이고, 상기 임시 포토레지스트는 포지티브 타입인 것을 특징으로 하는 삼차원 지지체의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 임시 패턴 및 상기 제1 패턴은 동일한 마스크로 형성되는 것을 특징으로 하는 삼차원 지지체의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 제2 포토레지스트를 도포하는 단계 후에 상기 제2 포토레지스트를 평탄화하는 단계를 더 포함하는 것을 특징으로 하는 삼차원 지지체의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 제2 포토레지스트를 현상하면서 상기 임시 패턴이 함께 제거되는 것을 특징으로 하는 삼차원 지지체의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 제2 패턴을 형성하는 단계 후에 상기 임시 포토레지스트를 도포하는 단계 내지 상기 제2 패턴을 형성하는 단계를 반복하여 상기 제2 패턴에 연결된 제3 패턴을 형성하는 것을 특징으로 하는 삼차원 지지체의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 임시 포토레지스트의 두께는 상기 제1 패턴 보다 두꺼운 것을 특징으로 하는 삼차원 지지체의 제조 방법.
- 삭제
- 삭제
- 삭제
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050077847A KR100720115B1 (ko) | 2005-08-24 | 2005-08-24 | 삼차원 지지체 및 그 제조 방법 |
US11/509,368 US8173356B2 (en) | 2005-08-24 | 2006-08-24 | Three dimensional scaffold and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050077847A KR100720115B1 (ko) | 2005-08-24 | 2005-08-24 | 삼차원 지지체 및 그 제조 방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070003062A Division KR100768881B1 (ko) | 2007-01-10 | 2007-01-10 | 포토레지스트 노광공정을 이용하여 제조된 삼차원 지지체 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100720115B1 true KR100720115B1 (ko) | 2007-05-18 |
Family
ID=37804798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050077847A KR100720115B1 (ko) | 2005-08-24 | 2005-08-24 | 삼차원 지지체 및 그 제조 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8173356B2 (ko) |
KR (1) | KR100720115B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106547143B (zh) * | 2017-01-24 | 2019-10-15 | 京东方科技集团股份有限公司 | 显示基板的制作方法、显示基板及显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6283997B1 (en) | 1998-11-13 | 2001-09-04 | The Trustees Of Princeton University | Controlled architecture ceramic composites by stereolithography |
US6520997B1 (en) | 1999-12-08 | 2003-02-18 | Baxter International Inc. | Porous three dimensional structure |
KR20050057023A (ko) * | 2002-08-30 | 2005-06-16 | 도요 고세이 고교 가부시키가이샤 | 패턴 형성용 방사선 민감성 네가티브형 레지스트 조성물 및패턴 형성 방법 |
US6982058B2 (en) | 1999-12-08 | 2006-01-03 | Baxter International, Inc. | Method for fabricating three dimensional structures |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04324618A (ja) | 1991-04-24 | 1992-11-13 | Oki Electric Ind Co Ltd | レジストパターン形成方法 |
KR970054993A (ko) | 1995-12-29 | 1997-07-31 | 김주용 | 부분 회절 격자 형성 방법 |
US6645432B1 (en) * | 2000-05-25 | 2003-11-11 | President & Fellows Of Harvard College | Microfluidic systems including three-dimensionally arrayed channel networks |
DE10106069A1 (de) * | 2001-02-09 | 2002-08-14 | Zf Lenksysteme Gmbh | Radialkolbenmaschine |
US6653244B2 (en) * | 2001-09-19 | 2003-11-25 | Binoptics Corporation | Monolithic three-dimensional structures |
KR20030026780A (ko) | 2001-09-26 | 2003-04-03 | 최시영 | 플라즈마 표시기를 위한 격벽 성형용 몰드의 제조방법 및성형법 |
US6749980B2 (en) * | 2002-05-20 | 2004-06-15 | Xerox Corporation | Toner processes |
US7229745B2 (en) * | 2004-06-14 | 2007-06-12 | Bae Systems Information And Electronic Systems Integration Inc. | Lithographic semiconductor manufacturing using a multi-layered process |
TW200707115A (en) * | 2005-08-12 | 2007-02-16 | Chi Lin Technology Co Ltd | Multi-layer photoresist and method for manufacturing the same, and method for etching a substrate |
US7550385B2 (en) * | 2005-09-30 | 2009-06-23 | Intel Corporation | Amine-free deposition of metal-nitride films |
US7897058B2 (en) * | 2006-02-13 | 2011-03-01 | Asml Netherlands B.V. | Device manufacturing method and computer program product |
US7790357B2 (en) * | 2006-09-12 | 2010-09-07 | Hynix Semiconductor Inc. | Method of forming fine pattern of semiconductor device |
US7820358B2 (en) * | 2007-07-04 | 2010-10-26 | Infineon Technologies Ag | Photo-resist material structure and method of producing the same |
KR101301080B1 (ko) * | 2008-03-17 | 2013-09-03 | 삼성전자주식회사 | 삼극 전계방출소자의 제조방법 |
KR101031465B1 (ko) * | 2008-11-03 | 2011-04-26 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 콘택홀 형성 방법 |
-
2005
- 2005-08-24 KR KR1020050077847A patent/KR100720115B1/ko active IP Right Grant
-
2006
- 2006-08-24 US US11/509,368 patent/US8173356B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6283997B1 (en) | 1998-11-13 | 2001-09-04 | The Trustees Of Princeton University | Controlled architecture ceramic composites by stereolithography |
US6520997B1 (en) | 1999-12-08 | 2003-02-18 | Baxter International Inc. | Porous three dimensional structure |
US6982058B2 (en) | 1999-12-08 | 2006-01-03 | Baxter International, Inc. | Method for fabricating three dimensional structures |
KR20050057023A (ko) * | 2002-08-30 | 2005-06-16 | 도요 고세이 고교 가부시키가이샤 | 패턴 형성용 방사선 민감성 네가티브형 레지스트 조성물 및패턴 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20070048964A1 (en) | 2007-03-01 |
US8173356B2 (en) | 2012-05-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Shin et al. | Multicomponent nanopatterns by directed block copolymer self-assembly | |
TWI647738B (zh) | 用於零間隙壓印之壓印微影模板及方法 | |
US20180296982A1 (en) | Polymer membranes having open through holes, and method of fabrication thereof | |
JP2011223009A5 (ko) | ||
US20100046079A1 (en) | Polymer pattern and metal film pattern, metal pattern, plastic mold using thereof, and method of the forming the same | |
TW200838794A (en) | Method of forming 3D high aspect ratio micro structures | |
Malachias et al. | Wrinkled-up nanochannel networks: long-range ordering, scalability, and X-ray investigation | |
US7682541B2 (en) | Manufacturing method of a microchemical chip made of a resin | |
JP2005080607A5 (ko) | ||
JP2018089593A (ja) | フィルタ膜 | |
KR100720115B1 (ko) | 삼차원 지지체 및 그 제조 방법 | |
KR100768881B1 (ko) | 포토레지스트 노광공정을 이용하여 제조된 삼차원 지지체 | |
KR101448870B1 (ko) | 나노/마이크로 하이브리드 구조물 제조방법 | |
TWI360519B (en) | Method of fabricating three-dimensional patterned | |
KR100881233B1 (ko) | 임프린트 리소그래피용 스탬프 및 이를 이용한 임프린트리소그래피방법 | |
KR101080612B1 (ko) | 전기화학적 에칭을 위한 식각 구멍 형성 방법 | |
TWI336222B (en) | Method for fabricating flexible array substrate and substrate module | |
US8580691B2 (en) | Method of forming non-planar membranes using CMP | |
US11071945B2 (en) | Filter membrane | |
KR102146284B1 (ko) | 액체매개 패턴형성장치, 그 제조 방법, 이를 이용한 액체매개 패턴 형성 방법 및 액체매개 패턴 | |
WO2016195064A1 (ja) | 構造体及びその製造方法 | |
JP6314609B2 (ja) | インプリントレプリカモールド及びインプリントレプリカモールドの製造方法 | |
TWI508148B (zh) | 金屬光柵的製備方法 | |
JP6146645B2 (ja) | 親水性制御素子及びその製造方法 | |
JP6646888B2 (ja) | 凸状構造体、凹状構造体、及び凸状構造体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
A107 | Divisional application of patent | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
FPAY | Annual fee payment |
Payment date: 20130422 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140424 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150422 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160422 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170420 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180423 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190418 Year of fee payment: 13 |