KR100712114B1 - Organic electro luminescence and method for fabricating of the same - Google Patents

Abstract

The present invention relates to an organic light emitting device for a high opening rate, by reducing the thickness of the insulating layer of the storage unit to reduce the step and to form an anode electrode to the storage unit of the organic light emitting device to increase the aperture ratio and include crosstalk It is a technique for improving process defects.

Description

Organic electroluminescent device and its manufacturing method {Organic electro luminescence and method for fabricating of the same}             

1 is a schematic cross-sectional view of an organic light emitting diode according to the related art.

2A to 3E are cross-sectional views schematically illustrating a manufacturing process of an organic light emitting diode according to a first embodiment of the present invention.

3A to 3E are cross-sectional views schematically illustrating a manufacturing process of an organic light emitting diode according to a second embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

A: Thin film transistor section B: Storage section

10, 200: insulation substrate 20, 210: buffer layer

30 lower electrode 40 semiconductor layer

220: first semiconductor layer pattern 230: second semiconductor layer pattern

50, 240: gate insulating film 60: gate electrode

250: first metal film pattern 70, 260: interlayer insulating film

270 trench 80, 290 contact hole

280: second metal film pattern 90: upper electrode

100, 300: source / drain electrodes 110, 310: passivation film

120, 320: via hole 130: anode electrode

330: first electrode 140 and 340: pixel defining layer

150, 350: organic film 160: cathode electrode

360: second electrode 1: opening part

The present invention relates to an organic electroluminescent device and a method of manufacturing the same, and to an organic electroluminescent device and a method of manufacturing the same, which improves a high aperture ratio and reduces process defects.

In general, among flat panel display devices, the organic electroluminescent device is self-luminous, has a wide viewing angle, fast response velocity, thin thickness, low manufacturing cost, and high contrast. It is attracting attention as a next-generation flat display device by showing characteristics such as contrast).

In general, an organic light emitting diode has an organic layer including an organic light emitting layer between an anode electrode and a cathode electrode so that holes supplied from the anode electrode and electrons supplied from the cathode are combined in the organic light emitting layer to emit light.

In addition, the organic light emitting device divides N * M pixels arranged in a matrix into a passive matrix method and an active matrix method according to a driving method. In the passive matrix method, the display area is an anode electrode. Since it is composed of a simple device in the form of a matrix by the and the cathode electrode, it is easy to manufacture, but there are limitations in the applications of low resolution and small display due to problems such as resolution, driving voltage rise, material lifespan, etc. On the other hand, the active matrix method has a stable luminance, low power consumption, and is advantageous in the application of high resolution and large display, since the display area is provided with a thin film transistor for each pixel to supply a constant current regardless of the number of pixels.

In addition, the organic light emitting diode may be divided into a bottom surface and a top surface emission type according to a direction in which light generated from the organic light emitting layer is emitted. First, the bottom surface emission type emits light toward the formed substrate. A reflective electrode is formed on the transparent electrode under the organic light emitting layer.

In this case, when the organic light emitting diode adopts an active matrix method, the portion where the thin film transistor is formed may not transmit light, thereby reducing the area where light can be emitted. In contrast, in the front emission type, a transparent electrode is formed on the organic light emitting layer and a reflective electrode is formed on the organic light emitting layer, so that light is emitted in a direction opposite to the substrate side, thereby increasing the area where light passes and improving luminance. .

1 is a cross-sectional view of a conventional organic light emitting device.

Referring to FIG. 1, in the conventional organic light emitting diode, a laminated film of a silicon oxide film (Si02), a silicon nitride film (SiNx), and a silicon oxide film / silicon nitride film (SiO 2 / SiN x) is used to prevent impurities from leaking out on the insulating substrate 10. One of the layers is selected to form the buffer layer 20, an amorphous silicon film is coated on the buffer layer 20 at a predetermined position of the transistor, and then crystallized and then patterned to form a polysilicon film.

Thereafter, a gate insulating film 50 is formed on the polysilicon film and the buffer layer 20, and a gate electrode material is formed on a portion of the thin film transistor portion A corresponding to the channel region of the polysilicon film on the gate insulating film 50. Depositing and patterning to form a gate electrode 60, and the storage unit B forms the lower electrode 30 at a predetermined position on the gate insulating film 50, and then the polysilicon film of the thin film transistor unit A is formed. Ion doping forms a semiconductor layer 40 including a source region and a drain region including a channel region.

Thereafter, an interlayer insulating film 70 is formed on the entire surface of the substrate on the gate electrode 60 in the thin film transistor unit A, the lower electrode 30 in the storage unit B, and the gate insulating film 50. The contact hole 80 is formed through the gate insulating film 50 and the interlayer insulating film 70 through the thin film transistor portion A to expose a predetermined portion of the source region and the drain region of the semiconductor layer 40. .

Thereafter, a source / drain electrode material is stacked so as to be connected to an upper portion of the interlayer insulating layer 70 and the source / drain regions of the semiconductor layer 40 through the contact hole 80, and then doped to permit source / drain electrodes. Form 100. In addition, the storage unit B forms the upper electrode 90 of the capacitor using a source / drain electrode material on the interlayer insulating layer 70 to correspond to the lower electrode 30 of the capacitor.

Subsequently, a silicon oxide layer (SiO ₂ ) and a silicon nitride layer are disposed over the upper electrode 90 of the storage unit B, the source / drain electrode 100 of the thin film transistor unit A, and the upper entire surface of the interlayer insulating layer 70. The passivation film 110, which is an inorganic film, is formed by selecting one of the stacked films of (SiNx) and silicon oxide film / silicon nitride film (SiO ₂ / SiNx).

Thereafter, a via hole 120 exposing one of the source / drain electrodes 100 of the transistor B is formed on the passivation layer 110 and the anode, which is the first electrode, is formed on the substrate on which the via hole 120 is formed. The electrode 130 is formed and patterned.

An opening is formed so that a portion of the upper surface of the anode electrode 130 is exposed by applying and patterning the pattern defining layer 140 used as the pixel isolation layer on the entire surface of the substrate including the anode electrode 130. An organic layer 150 including an organic emission layer and a cathode electrode 160 as a second electrode are formed on the anode electrode 130 exposed in the opening.

The manufacturing method of the conventional organic light emitting device having the structure as described above and the problems thereof are as follows.

Since the thickness of the gate insulating film (SiO 2 or SiN x: 40) required for the organic light emitting diode is generally maintained at 1000 GPa or more, the area of the upper electrode must be increased in the storage unit in order to satisfy an appropriate capacitor value. There is a problem that a high opening rate cannot be realized.

That is, in order to compensate for such a problem and to realize a high opening ratio, it is necessary to reduce the insulation thickness of the storage unit to reduce the step and increase the capacitor value so as to avoid the process defect due to the cross talk.

An object of the present invention is to provide a structure for increasing the capacitor value of the storage unit in the organic light emitting device.

Another object of the present invention is to provide a high opening ratio by reducing the thickness of the insulating layer of the storage unit in the organic light emitting device.

Still another object of the present invention is to provide a process failure due to crosstalk generated in the anode electrode and the storage unit in the organic light emitting device.

In order to achieve the above object, the structure of the organic light emitting device according to the first embodiment of the present invention

A substrate having a thin film transistor portion and a storage portion;

A first semiconductor layer pattern formed on the thin film transistor portion and a second semiconductor layer pattern formed on the storage portion;

A gate insulating film formed over the entire surface of the substrate and having a trench on the second semiconductor layer pattern;

A first metal film pattern formed on the thin film transistor and formed to correspond to the channel region of the first semiconductor layer pattern;

A second metal film pattern formed on the storage part and formed on the trench so as to correspond to the second semiconductor layer pattern;

An interlayer insulating film formed over the entire substrate;

A source / drain electrode formed in the contact hole connected to the source / drain region of the first semiconductor layer pattern through the gate insulating film and the interlayer insulating film;

A passivation film formed over the entire surface of the substrate;

A first electrode formed on the passivation layer by connecting to and patterning one of the source / drain electrodes through a via hole;

The organic layer and the second electrode including the organic light emitting layer is formed on the first electrode.

In order to achieve the above object, the manufacturing method of the organic light emitting device according to the first embodiment of the present invention

Forming a substrate having a thin film transistor portion and a storage portion;

Forming a first semiconductor layer pattern on the thin film transistor portion and a second semiconductor layer pattern on the storage portion;

Forming a gate insulating film having a trench on the substrate and the second semiconductor layer pattern;

Forming a first metal film pattern to correspond to the channel region of the thin film transistor unit and the first semiconductor layer pattern;

Forming a second metal layer pattern on the trench to correspond to the storage unit and the second semiconductor layer pattern;

Forming an interlayer insulating film on the entire surface of the substrate;

Forming a source / drain electrode in the contact hole connected to the source / drain region of the first semiconductor layer pattern through the gate insulating film and the interlayer insulating film;

Forming a passivation film over the entire surface of the substrate;

Patterning a first electrode connected to any one of the source / drain electrodes through a via hole on the passivation layer;

It is characterized in that the manufacturing method comprising the step of forming an organic film and a second electrode including an organic light emitting layer on the first electrode.

In order to achieve the object as described above, the structure of the organic light emitting device according to the second embodiment of the present invention

A substrate having a thin film transistor portion and a storage portion;

A first semiconductor layer pattern formed on the thin film transistor portion and a second semiconductor layer pattern formed on the storage portion;

A gate insulating film having a trench over the second semiconductor layer pattern formed over the entire surface of the substrate;

A first metal film pattern formed on the thin film transistor and formed to correspond to the channel region of the first semiconductor layer pattern;

An interlayer insulating film formed on the entire surface of the substrate except for the upper portion of the second semiconductor layer pattern;

A source / drain electrode penetrating the gate insulating film and the interlayer insulating film to form a contact hole connected to the source / drain region of the first semiconductor layer pattern;

A second metal film pattern formed on the storage part and formed on the trench so as to correspond to the second semiconductor layer pattern;

A passivation film formed over the entire surface of the substrate;

A first electrode formed on the passivation layer by connecting to and patterning one of the source / drain electrodes through a via hole;

The organic layer and the second electrode including the organic light emitting layer is formed on the first electrode.

In order to achieve the above object, the manufacturing method of the organic light emitting device according to the second embodiment of the present invention

Forming a substrate having a thin film transistor portion and a storage portion;

Forming a first semiconductor layer pattern on the thin film transistor portion and a second semiconductor layer pattern on the storage portion;

Forming a gate insulating film on the substrate;

Forming a first metal film pattern to correspond to the channel region of the thin film transistor unit and the first semiconductor layer pattern;

Forming an interlayer insulating film on the entire surface of the substrate except for the upper portion of the second semiconductor layer pattern;

Forming a source / drain electrode in the contact hole connected to the source / drain region of the first semiconductor layer pattern through the gate insulating film and the interlayer insulating film;

Forming a trench on the gate insulating layer;

Forming a second metal layer pattern on the trench to correspond to the storage unit and the second semiconductor layer pattern;

Forming a passivation film over the entire surface of the substrate;

Patterning a first electrode connected to any one of the source / drain electrodes through a via hole on the passivation layer;

It is characterized in that the manufacturing method comprising the step of forming an organic film and a second electrode including an organic light emitting layer on the first electrode.

Hereinafter, described in detail with reference to the accompanying drawings of the present invention.

2A through 2E are cross-sectional views sequentially illustrating a manufacturing process of an organic light emitting diode according to a first exemplary embodiment of the present invention.

First, as shown in FIG. 2A, the organic light emitting diode includes a thin film transistor portion A and a storage portion B, and includes an insulating substrate 200 made of glass, synthetic resin, or the like, and an upper portion of the substrate 200. The buffer layer 210 is formed by selecting one of a stacked layer of a silicon oxide film (SiO 2), a silicon nitride film (SiN x), and a silicon oxide film / nitride film (SiO 2 / SiN x) to prevent the impurities from flowing out.

The buffer layer 210 is not necessarily formed, it is preferable to form selectively.

A polysilicon layer formed by coating and crystallizing an amorphous silicon layer on the buffer layer 210 is patterned to be provided in the thin film transistor unit A and the storage unit B and gated over the entire surface of the substrate including the provided polysilicon layer. The insulating film 240 is formed.

Next, as shown in FIG. 2B, a gate electrode material is deposited and patterned on the gate insulating layer 240 so as to correspond to the channel region of the polysilicon layer defined in the thin film transistor portion A, thereby forming the first metal layer pattern 250. And a first silicon layer pattern including the channel region by defining a source region and a drain region by ion doping the polysilicon layer of the thin film transistor unit A using the first metal layer pattern 250 as a mask. A second semiconductor layer pattern 230 is formed so that the polysilicon film provided in the storage unit B serves as a lower electrode of the capacitor.

In addition, in order to form the upper electrode of the capacitor in the storage unit B, the trench 270 is formed by etching the entire thickness of the gate insulating film 240 from 900 Å to 1100 Å to 450 Å to 550 인 which is 1/2. A second electrode which is deposited on the gate insulating layer 240 having the trench 270 of the branch portion B so as to correspond to the second semiconductor layer pattern 230 to a thickness of 500 Å to 1000 Å to become the upper electrode of the capacitor The metal film pattern 280 is formed.

Here, the trench 270 is formed on the gate insulating layer 240 to reduce the gap between the upper and lower electrodes of the capacitor, thereby increasing the capacitance of the capacitor and reducing the surface area. The trench 270 may be formed by a dry etching method.

In addition, the gate electrode material is made of at least one metal including molybdenum (Mo), molybdenum alloy (Mo alloy), aluminum (Al), aluminum alloy (Al alloy), silver (Ag), silver alloy (Ag alloy). .

Next, as shown in FIG. 2C, an interlayer insulating film 260 is formed over the entire surface of the substrate, and the interlayer insulating film 260 and the gate insulating film 240 pass through the source region of the first semiconductor layer pattern 220. The contact hole 290 is formed to expose a predetermined portion of the drain region, and the upper portion of the interlayer insulating layer 260 and the source / first semiconductor layer pattern 220 are formed through the contact hole 290 of the thin film transistor unit A. The source / drain electrode material is deposited and patterned so that the drain regions are respectively connected to form the source / drain electrode 300.

Next, as shown in FIG. 2D, a passivation film 310 is formed to a thickness of 15000 μm over the entire surface of the substrate including the thin film transistor portion A and the storage portion B, and the source of the thin film transistor portion A is formed. The passivation film 310 is etched to expose any one of the / drain electrodes 300 to form a via hole 320.

In this case, an inorganic insulating layer may be used as the passivation layer 310, and SiO 2, SiNx, or a laminated layer thereof may be used.

Next, as shown in FIG. 2E, the first electrode 330 is formed over the entire surface of the substrate to be connected to any one of the source / drain electrodes 300 of the thin film transistor unit A through the via hole 320. And patterned to form a portion of the thin film transistor unit A and the storage unit B.

Next, after the pixel defining layer 340 used as the pixel isolation layer is applied over the entire surface of the substrate on which the first electrode 330 is formed, the patterning is performed to expose a portion of the upper surface of the first electrode 330. And an organic layer 350 and a second electrode 360 including an organic emission layer formed on the first electrode 330 exposed in the opening.

Here, the pixel defining layer 340 is made of one material selected from the group consisting of acrylic resin, benzocyclobutene (BCB) and polyimide (PI).

In addition, when the first electrode is an anode electrode, the second electrode is a cathode electrode. On the contrary, when the first electrode is a cathode electrode, the second electrode is an anode electrode.

3A to 3E are cross-sectional views sequentially illustrating a manufacturing process of an organic light emitting diode according to a second exemplary embodiment of the present invention.

First, as shown in FIG. 3A, the organic light emitting diode includes a thin film transistor portion A and a storage portion B, and includes an insulating substrate 200 made of glass, a synthetic resin, or the like, and an upper portion of the substrate 200. The buffer layer 210 is formed by selecting one of a stacked layer of a silicon oxide film (SiO 2), a silicon nitride film (SiN x), and a silicon oxide film / nitride film (SiO 2 / SiN x) to prevent the impurities from flowing out.

The buffer layer 210 does not have to be formed, but is preferably formed selectively.

Next, the polysilicon film formed by coating and crystallizing an amorphous silicon film on the buffer layer 210 is patterned to be provided in the thin film transistor part A and the storage part B to form the first semiconductor layer pattern 220 and the second. The semiconductor layer pattern 230 is formed, and the gate insulating layer 240 is formed over the entire surface of the substrate on which the first and second semiconductor layer patterns 220 and 230 are formed.

Next, as shown in FIG. 3B, a portion of the gate insulating layer is etched on the second semiconductor layer pattern 230 to form a trench, and a gate insulating layer 240 is formed over the entire surface of the substrate including the provided polysilicon layer. After the formation, the gate electrode material is deposited and patterned on the gate insulating layer 240 to correspond to the channel region of the polysilicon layer defined in the thin film transistor portion A to form the first metal layer pattern 250. A second metal film pattern 280 corresponding to the second semiconductor layer pattern 230 is formed.

Subsequently, an interlayer insulating layer 260 is formed over the entire surface of the substrate, and the interlayer insulating layer 260 and the gate insulating layer 240 are penetrated, so that predetermined portions of the source region and the drain region of the first semiconductor layer pattern 220 are formed. The contact hole 290 is formed to be exposed, and the interlayer insulating layer defined on the second semiconductor layer pattern 230 of the storage unit B is removed.

Next, as shown in FIG. 3C, the source / drain may be connected to the upper portion of the interlayer insulating layer 260 and the source / drain region of the first semiconductor layer pattern 220 through the contact hole 290 of the thin film transistor unit A. FIG. The electrode material is deposited and patterned to form a source / drain electrode 300, and corresponds to the second semiconductor layer pattern 230 on the gate insulating layer 240 having the trench 270 of the storage unit B. The source / drain electrode material is deposited to a thickness of 5400 kPa to 5600 kPa so as to form the second metal film pattern 280 that becomes the upper electrode of the capacitor.

The source / drain electrode material may include at least one metal including molybdenum (Mo), molybdenum alloy (Mo alloy), aluminum (Al), aluminum alloy (Al alloy), silver (Ag), and silver alloy (Ag alloy). Is done.

Next, as shown in FIG. 3D, a passivation film 310 is formed to a thickness of 14000 kPa to 16000 kPa over the entire surface of the substrate including the thin film transistor A and the storage B, and the thin film transistor A The passivation layer 310 is etched to expose one of the source / drain electrodes 300 to form the via hole 320.

Next, as shown in FIG. 3E, a first electrode 330 is formed over the entire surface of the substrate so as to be connected to any one of the source / drain electrodes 300 of the thin film transistor unit A through the via hole 320. And patterned to form a portion of the thin film transistor unit A and the storage unit B.

Next, after the pixel defining layer 340 used as the pixel isolation layer is applied over the entire surface of the substrate on which the first electrode 330 is formed, the patterning is performed to expose a portion of the upper surface of the first electrode 330. And an organic layer 350 and a second electrode 360 including an organic emission layer formed on the first electrode 330 exposed in the opening.

Here, the pixel defining layer 340 is made of one material selected from the group consisting of acrylic resin, benzocyclobutene (BCB) and polyimide (PI).

In addition, when the first electrode is an anode electrode, the second electrode is a cathode electrode. In contrast, when the first electrode is a cathode electrode, the second electrode is an anode electrode.

As described above, in the present embodiment, the source / drain electrode material is used as the upper electrode of the capacitor, and the thickness of the capacitor is increased by decreasing the thickness of the insulating film between the upper and lower electrodes of the capacitor, thereby reducing the area of the capacitor and further reducing the first electrode ( Since the thickness of the insulating film between the 330 and the upper electrode of the capacitor can be thickened, it is possible to prevent the problem of the coupling cap generated when the first electrode and the capacitor upper electrode overlap. As the one electrode can be extended over the capacitor, the aperture ratio can be increased.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below. I can understand that you can.

The present invention as described above relates to an organic light emitting device for a high opening rate, to reduce the step thickness by reducing the insulating film thickness of the storage portion and to form an anode electrode to the storage portion of the organic light emitting device to increase the high opening rate and cross It is characterized in that a process failure including a torque does not occur.

Claims (27)

A substrate having a thin film transistor portion and a storage portion; A first semiconductor layer pattern formed on the thin film transistor portion and a second semiconductor layer pattern formed on the storage portion; A gate insulating film formed over the entire surface of the substrate and having a trench on the second semiconductor layer pattern; A first metal film pattern formed on the thin film transistor and formed to correspond to the channel region of the first semiconductor layer pattern; A second metal film pattern formed on the storage part and formed on the trench so as to correspond to the second semiconductor layer pattern; An interlayer insulating film formed over the entire substrate; A source / drain electrode formed in the contact hole connected to the source / drain region of the first semiconductor layer pattern through the gate insulating film and the interlayer insulating film; A passivation film formed over the entire surface of the substrate; A first electrode formed on the passivation layer by connecting to and patterning one of the source / drain electrodes through a via hole; An organic light emitting diode, characterized in that to form an organic film and a second electrode including an organic light emitting layer on the first electrode. The organic light emitting device of claim 1, wherein the first electrode is formed on a portion of the storage unit. The organic light emitting device of claim 1, wherein the second semiconductor layer pattern is a lower electrode of a capacitor. The organic light emitting device of claim 1, wherein the first metal film pattern is a gate electrode, and the second metal film pattern is an upper electrode of a capacitor. 2. The organic light emitting device of claim 1, wherein the gate insulating layer including the trench of the storage unit has a thickness of 450 kW to 550 kW. The organic light emitting device of claim 1, wherein the passivation layer is a silicon oxide (SiO 2) material. 7. The organic light emitting device of claim 6, wherein the passivation film has a thickness of 14000 kPa to 16000 kPa. Forming a substrate having a thin film transistor portion and a storage portion; Forming a first semiconductor layer pattern on the thin film transistor portion and a second semiconductor layer pattern on the storage portion; Forming a gate insulating film having a trench on the substrate and the second semiconductor layer pattern; Forming a first metal film pattern to correspond to the channel region of the thin film transistor unit and the first semiconductor layer pattern; Forming a second metal layer pattern on the trench to correspond to the storage unit and the second semiconductor layer pattern; Forming an interlayer insulating film on the entire surface of the substrate; Forming a source / drain electrode in the contact hole connected to the source / drain region of the first semiconductor layer pattern through the gate insulating film and the interlayer insulating film; Forming a passivation film over the entire surface of the substrate; Patterning a first electrode connected to any one of the source / drain electrodes through a via hole on the passivation layer; A method of manufacturing an organic light emitting diode, characterized in that the step of forming an organic film and a second electrode including an organic light emitting layer on the first electrode. The method of claim 8, wherein the gate insulating layer is etched at 450 Å to 550 Å to form a trench in the storage unit. The method of claim 9, wherein the trench is formed by a dry etching method. The method of claim 8, wherein a second metal layer pattern is formed by depositing a gate electrode material on the trench. The method of claim 8, wherein the passivation film is a silicon oxide (SiO 2) material. The method of claim 12, wherein the passivation film has a thickness of 14000 kPa to 16000 kPa. A substrate having a thin film transistor portion and a storage portion; A first semiconductor layer pattern formed on the thin film transistor portion and a second semiconductor layer pattern formed on the storage portion; A gate insulating film formed over the entire surface of the substrate and having a trench on the second semiconductor layer pattern; A first metal film pattern formed on the thin film transistor and formed to correspond to the channel region of the first semiconductor layer pattern; An interlayer insulating layer formed on the entire surface of the substrate except for the upper portion of the second semiconductor layer pattern; A source / drain electrode penetrating the gate insulating film and the interlayer insulating film to form a contact hole connected to the source / drain region of the first semiconductor layer pattern; A second metal film pattern formed on the storage part and formed on the trench so as to correspond to the second semiconductor layer pattern; A passivation film formed over the entire surface of the substrate; A first electrode formed on the passivation layer by connecting to and patterning one of the source / drain electrodes through a via hole; An organic light emitting diode, characterized in that to form an organic film and a second electrode including an organic light emitting layer on the first electrode. The organic light emitting device of claim 14, wherein the first electrode is formed in the thin film transistor unit and the storage unit. The organic light emitting device of claim 14, wherein the second semiconductor layer pattern is a lower electrode of a capacitor. 15. The organic light emitting device of claim 14, wherein the first metal film pattern is a gate electrode, and the second metal film pattern is an upper electrode of a capacitor. 15. The organic light emitting device of claim 14, wherein the gate insulating layer including the trench of the storage unit has a thickness of 450 kW to 550 kW. 15. The organic light emitting device of claim 14, wherein the passivation layer is a silicon oxide (SiO 2) material. 20. The organic light emitting device of claim 19, wherein the passivation film has a thickness of 14000 kPa to 16000 kPa. Forming a substrate having a thin film transistor portion and a storage portion; Forming a first semiconductor layer pattern on the thin film transistor portion and a second semiconductor layer pattern on the storage portion; After depositing a gate insulating film on the substrate, etching the gate insulating film so as to have a trench on the second semiconductor layer pattern; Forming a first metal film pattern to correspond to the channel region of the thin film transistor unit and the first semiconductor layer pattern; Forming an interlayer insulating film on the entire surface of the substrate, and then removing the interlayer insulating film on the second semiconductor layer pattern; Forming a source / drain electrode in the contact hole connected to the source / drain region of the first semiconductor layer pattern through the gate insulating film and the interlayer insulating film; Forming a second metal layer pattern on the trench to correspond to the storage unit and the second semiconductor layer pattern; Forming a passivation film over the entire surface of the substrate; Patterning a first electrode connected to any one of the source / drain electrodes through a via hole on the passivation layer; A method of manufacturing an organic light emitting diode, characterized in that the step of forming an organic film and a second electrode including an organic light emitting layer on the first electrode. 22. The method of claim 21, wherein the trench of the storage unit is formed by etching a total thickness of 4900 ns to 5100 ns of the interlayer insulating layer and a partial thickness of 450 ns to 550 ns of the gate insulating layer. The method of claim 22, wherein the trench is formed by a dry etching method. 23. The method of claim 22, wherein a source / drain electrode material is deposited on the trench to form a second metal layer pattern. The method of claim 21, wherein the passivation layer is a silicon oxide (SiO 2) material. 26. The method of claim 25, wherein the passivation film has a thickness of 14000 kPa to 16000 kPa. 22. The method of claim 21, wherein the etching of the second semiconductor layer pattern with the trench is formed by stacking the interlayer insulating film and then etching together when removing the interlayer insulating film on the second semiconductor layer pattern. Method for producing an organic light emitting device, characterized in that.

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