KR100623717B1 - Organic electro luminescence display and method for fabricating the same - Google Patents

Abstract

The present invention is a technique for bringing the via hole of the thin film transistor by simultaneously etching the reflective film and the insulating film provided under the reflective film in the organic EL device, thereby simplifying the process and reducing the process cost.

Description

Organic electroluminescent device and its manufacturing method {Organic electro luminescence display and method for fabricating the same}             

1 is a schematic cross-sectional view of an organic light emitting diode according to the related art.

2A to 2D are cross-sectional views schematically illustrating a manufacturing process of an organic light emitting diode according to a first embodiment of the present invention.

3A to 3E are cross-sectional views schematically illustrating a manufacturing process of an organic light emitting diode according to a second embodiment of the present invention.

         <Explanation of symbols for the main parts of the drawings>

    10, 210: insulating substrate 20, 220: buffer layer

    30: semiconductor layer 230: semiconductor layer pattern

           40, 240: gate insulating film 50: gate electrode

    250: metal film pattern 60, 260: interlayer insulating film

    70, 270: Contact hole 80, 280: Source / drain electrode

    90, 290: passivation film 100: first via hole

    110, 310: planarization film 120, 320: reflection film

    130: second via hole 140: anode electrode

    340: first electrode 150 and 350: pixel defining layer

    160, 360: organic film 170: cathode electrode

    370: second electrode 1: opening

    400: via hole 325: reflective film pattern

    345: first electrode pattern

The present invention relates to an organic light emitting device and a method of manufacturing the same, by simultaneously etching the reflective film pattern and the insulating film provided under the reflective film pattern to form a via hole of the thin film transistor, to simplify the process and reduce the process cost An organic electroluminescent device and a method of manufacturing the same.

In general, among flat panel display devices, the organic electroluminescent device is self-luminous, has a wide viewing angle, fast response velocity, thin thickness, low manufacturing cost, and high contrast. It is attracting attention as a next-generation flat display device by showing characteristics such as contrast).

In general, an organic light emitting diode has an organic layer including an organic light emitting layer between an anode electrode and a cathode electrode, and holes supplied from the anode electrode and electrons supplied from the cathode are combined in the organic light emitting layer to emit light. .

In addition, the organic light emitting device divides N * M pixels arranged in a matrix into a passive matrix method and an active matrix method according to a driving method. In the passive matrix method, the display area is an anode electrode. It is composed of a simple device in the form of a matrix by and the cathode electrode, it is easy to manufacture, but limited to low resolution and small display due to problems such as resolution, driving voltage rise, material lifespan, etc. On the other hand, the active matrix method has a stable luminance, low power consumption, and is advantageous in the application of high resolution and large display, since the display area is provided with a thin film transistor for each pixel to supply a constant current regardless of the number of pixels.

In addition, the organic light emitting diode may be divided into a bottom surface and a top surface emission type according to a direction in which light generated from the organic light emitting layer is emitted. First, the bottom surface emission type emits light toward the formed substrate. A reflective electrode is formed on the transparent electrode under the organic light emitting layer. In this case, when the organic light emitting diode adopts an active matrix method, the portion where the thin film transistor is formed may not transmit light, thereby reducing the area where light can be emitted. In contrast, in the front emission type, a transparent electrode is formed on the organic light emitting layer and a reflective electrode is formed on the organic light emitting layer, so that light is emitted in a direction opposite to the substrate side, thereby increasing the area where light passes and improving luminance. .

1 is a cross-sectional view of a conventional organic light emitting device.

Referring to FIG. 1, a conventional organic light emitting diode is coated with an amorphous silicon film (a-Si) at a predetermined position, which is a thin film transistor, on an insulating substrate 10 and a buffer layer 20, and then crystallized and patterned. A polysilicon film (p-Si) is formed.

Thereafter, a gate insulating film 40 is formed on the polysilicon film and the buffer layer 20, and a gate electrode material is deposited on the gate insulating film 40 to correspond to the channel region of the polysilicon film, and then patterned. By forming the gate electrode 50 of the thin film transistor and ion doping the polysilicon film of the thin film transistor with the gate electrode 50 as a mask, the semiconductor layer 30 defining a source region and a drain region and including a channel region To form.

Thereafter, an interlayer insulating film 60 is formed on the entire surface of the gate electrode 50 and the gate insulating film 40 of the thin film transistor, and the gate insulating film 40 and the interlayer insulating film 60 are formed on the thin film transistor through photolithography. ) And a contact hole 70 is formed to expose a predetermined portion of the source / drain region of the semiconductor layer 30.

Thereafter, a source / drain electrode material is laminated through the contact hole 70 so as to be connected to an upper portion of the interlayer insulating layer 60 and the source / drain regions of the semiconductor layer 30, and then patterned to form a source / drain electrode 80. Passivation by forming a silicon oxide film (SiO 2), a silicon nitride film (SiN x), or a silicon oxide film / nitride film (SiO 2 / SiN x) over the entire surface of the thin film transistor source / drain electrode 80 and the interlayer insulating film 60. A film 90 is formed.

Here, the passivation film 90 has a disadvantage in that the planarization property is not good because the film is uniformly deposited according to the lower step using the deposition equipment. Therefore, in the case where the organic light emitting device has a top emission type structure, the planarization film 110 is further formed on the passivation film 90 to compensate for the planarization characteristic.

Thereafter, a first via hole 100 is formed through photolithography to expose one of the source / drain 80 electrodes of the thin film transistor on the passivation layer 90, and the first via hole 100 is provided. On the passivation film 90, one of the group consisting of acrylic resin, benzocyclobutene resin (BCB), polyimide resin (PI), polyphenol resin, and the like is selected to form a planarization film 110 which is an organic insulating film.

Thereafter, one of the source / drain 80 electrodes of the thin film transistor having photoresist patterned by photolithography at a defined position of the first via hole 100 of the thin film transistor on the planarization layer 110 is formed. The second via hole 130 to be exposed is formed.

Thereafter, the reflective film 120 is deposited on the planarization film 110 including the first and second via holes 100 and 130, and the reflective film 120 is patterned by wet etching. An anode electrode 140 as a first electrode is formed and patterned on the entire surface of the substrate including the two via holes 100 and 130 and the upper portion of the reflective film 120.

Thereafter, the pixel defining layer 150 used as the pixel isolation layer is coated on the entire surface of the substrate including the anode electrode 140 and patterned to expose a portion of the upper surface of the anode electrode 140. Next, an organic layer 160 including an organic emission layer and a cathode electrode 170 as a second electrode are formed on the anode 140 exposed in the opening 1.

The manufacturing method of the conventional organic light emitting device having the structure as described above and the problems thereof are as follows.

The etching process according to the formation of the first and second via holes of the thin film transistor is complicated and thus a manufacturing cost increases.

That is, to solve the above problems, the reflective film and the insulating film provided under the reflective film are simultaneously etched to form via holes of the thin film transistor, thereby simplifying the process and reducing the cost.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting device and a method of manufacturing the same, which may reduce the number of processes and process costs by etching the reflective film and the insulating film provided under the reflective film when forming the via hole of the thin film transistor.

In order to achieve the above object, the structure of the organic light emitting device according to the first embodiment of the present invention

A thin film transistor having a semiconductor layer pattern formed on a substrate, a metal film pattern corresponding to a channel region of the semiconductor layer pattern, and a source / drain electrode in contact with a source / drain region of the semiconductor layer pattern;

A planarization film having a via hole formed to expose any one of the source and drain electrodes;

A reflective film pattern formed in an area excluding the via hole;

A first electrode pattern formed to be connected to any one of the source / drain electrodes through the via hole;

An organic film and a second electrode including at least an organic light emitting layer on the first electrode pattern, wherein the first electrode pattern and the reflective film pattern is formed including the same etching surface.

In order to achieve the above object, the manufacturing method of the organic light emitting device according to the first embodiment of the present invention

Providing the substrate;

Forming a thin film transistor having a semiconductor layer pattern formed on the substrate and having a metal layer pattern corresponding to a channel region of the semiconductor layer pattern and a source / drain electrode contacting a source / drain region of the semiconductor layer pattern; ;

Forming a planarization film over the entire surface of the substrate;

Forming a reflective film on the planarization film;

Forming a via hole by collectively etching the planarization layer and the reflective layer so that any one of the source / drain electrodes is exposed;

Forming a first electrode to be connected to any one of the source / drain electrodes through the via hole;

Simultaneously etching the reflective film and the first electrode to form a reflective film pattern and a first electrode pattern;

It characterized in that the manufacturing method comprising the step of forming an organic film and a second electrode including at least an organic light emitting layer on the first electrode pattern.

In order to achieve the object as described above, the structure of the organic light emitting device according to the second embodiment of the present invention

A thin film transistor having a semiconductor layer pattern formed on a substrate, a metal film pattern corresponding to a channel region of the semiconductor layer pattern, and a source / drain electrode in contact with a source / drain region of the semiconductor layer pattern;

A passivation film having a via hole formed to expose any one of the source / drain electrodes;

A planarization film formed on the entire surface of the substrate except for the via hole;

A reflective film pattern formed in an area excluding the via hole;

A first electrode pattern formed to be connected to any one of the source / drain electrodes through the via hole;

An organic layer and a second electrode including at least an organic light emitting layer on the first electrode pattern, wherein the first electrode pattern and the reflective layer pattern is formed including the same etching surface.

In order to achieve the above object, the manufacturing method of the organic light emitting device according to the second embodiment of the present invention

Providing the substrate;

Forming a thin film transistor having a semiconductor layer pattern formed on the substrate and having a metal layer pattern corresponding to a channel region of the semiconductor layer pattern and a source / drain electrode in contact with a source / drain region of the semiconductor layer pattern;

Forming a passivation film over the entire surface of the substrate;

Forming a planarization layer on the passivation;

Forming a reflective film on the planarization film;

Forming a via hole by collectively etching the passivation film, the planarization film, and the reflective film so that any one of the source / drain electrodes is exposed;

Forming a first electrode to be connected to any one of the source / drain electrodes through the via hole;

Simultaneously etching the reflective film and the first electrode to form a reflective film pattern and a first electrode pattern;

It is characterized in that the manufacturing method comprising the step of forming an organic film and a second electrode including at least an organic light emitting layer on the first electrode.

Hereinafter, described in detail with reference to the accompanying drawings of the present invention.

2A through 2D are cross-sectional views sequentially illustrating a manufacturing process of an organic light emitting diode according to a first exemplary embodiment of the present invention.

First, as shown in FIG. 2A, the organic light emitting diode of the present invention includes a thin film transistor, and in order to prevent impurities flowing out of the upper portion of the insulating substrate 210 and the substrate 210 made of glass or synthetic resin. The buffer layer 220 is formed by selecting one of a stacked film of a silicon oxide film (SiO 2), a silicon nitride film (SiN x), and a silicon oxide film / nitride film (SiO 2 / SiN x).

The buffer layer 220 does not have to be formed, but is preferably formed selectively.

First, an amorphous silicon film is coated and crystallized on the buffer layer 220 to form a thin film transistor, and then patterned to form a polysilicon film, and a gate insulating film 240 is formed over the entire upper surface of the polysilicon film and the buffer layer 220. do.

Next, a metal layer pattern 250 is formed by depositing and patterning a gate electrode material on the gate insulating layer 240 so as to correspond to the channel region of the polysilicon layer defined in the thin film transistor, and masking the metal layer pattern 250. By ion doping the polysilicon film of the thin film transistor, a semiconductor layer pattern 230 including a channel region is defined by defining a source region and a drain region.

The gate electrode material may be formed of at least one metal material including a metal material such as chromium (Cr), molybdenum (Mo), or aluminum (Al) or an alloy thereof.

Next, as shown in FIG. 2B, an interlayer insulating layer 260 is formed over the metal layer pattern 250 and the upper surface of the gate insulating layer 240 of the thin film transistor, and passes through the interlayer insulating layer 260 and the gate insulating layer 240. The contact hole 270 is formed to expose predetermined portions of the source region and the drain region of the semiconductor layer pattern 230, and then the upper portion of the interlayer insulating layer 260 and the semiconductor layer 230 through the contact hole 270. A source / drain electrode material is deposited and patterned to form a source / drain electrode 280 such that the source / drain regions of are respectively connected.

The source / drain electrode material may include at least one metal material including tungsten (W), molybdenum (Mo), or aluminum (Al) or an alloy thereof.

Next, an acrylic resin, a benzocyclobutene resin (BCB), a polyimide resin (PI), a spin on glass (SOG), and an acrylic film is disposed over the entire surface of the substrate including the thin film transistor of the organic light emitting device as shown in FIG. The planarization layer 310, which is an organic insulating layer, is formed by selecting one from a group consisting of an acrylate, a polyphenol resin, and the like, and a material of the reflective layer 320 is stacked over the entire surface of the substrate including the planarization layer 310.

Subsequently, in order to form the via hole 400 of the thin film transistor, the planarization layer 310 and the reflective layer 320 are simultaneously etched by a dry etching method using a reactive ion etching (RIE) or inductively coupled plasma (ICP) mode. The via hole 400 is formed to expose the source / drain electrodes 280 of the thin film transistor.

Here, the reflective film 320 is made of at least one metal material including aluminum (Al), aluminum alloy (Al alloy), silver (Ag), silver alloy (Ag alloy).

Next, as shown in FIG. 2D, the first electrode 340 is connected to the source / drain electrode 280 through the via hole 400 of the thin film transistor, and the reflective film and the first electrode are simultaneously etched using an etching mask. The reflective film pattern 325 and the first electrode pattern 345 are formed to have the same etching surface.

Accordingly, the etching method may be a dry etching method or a wet etching method.

Next, the pixel defining layer 350 used as the pixel isolation layer is applied over the entire substrate on which the first electrode pattern 345 is formed, and then patterned to expose a portion of the upper surface of the first electrode pattern 345. The opening 1 is formed to be formed, and the organic layer 360 and the second electrode 370 including the organic emission layer are formed on the first electrode pattern 340 exposed in the opening 1.

Here, the pixel definition layer 350 is made of one material selected from the group consisting of acrylic resin, benzocyclobutene (BCB) and polyimide (PI), and the first electrode 340 is made of ITO or IZO. It consists of electrodes.

In addition, when the first electrode 340 is an anode electrode, the second electrode 370 is a cathode electrode. On the contrary, when the first electrode 340 is a cathode electrode, the second electrode 370 becomes an anode electrode.

3A to 3E are cross-sectional views sequentially illustrating a manufacturing process of an organic light emitting diode according to a second exemplary embodiment of the present invention.

First, as shown in FIG. 3A, the organic electroluminescent device includes an insulated substrate 210 made of glass, a synthetic resin, or the like, and a silicon oxide film (SiO 2) or a silicon nitride film (I) to prevent impurities from flowing out from the upper portion of the substrate 210. The buffer layer 220 is formed by selecting one of a stacked film of SiNx) and a silicon oxide film / nitride film (SiO2 / SiNx).

The buffer layer 220 does not have to be formed, but is preferably formed selectively.

First, an amorphous silicon film is coated and crystallized on the buffer layer 220 to form a thin film transistor, and then patterned to form a polysilicon film, and a gate insulating film 240 is formed over the entire upper surface of the polysilicon film and the buffer layer 220. do.

Next, a metal layer pattern 250 is formed by depositing and patterning a gate electrode material on the gate insulating layer 240 so as to correspond to the channel region of the polysilicon layer, and using the metal layer pattern 250 as a mask, the thin film transistor. By ion doping a polysilicon film, a semiconductor layer pattern 230 including a channel region is defined by defining a source region and a drain region.

The gate electrode material may be formed of at least one metal material including a metal material such as chromium (Cr), molybdenum (Mo), or aluminum (Al) or an alloy thereof.

Next, as shown in FIG. 3B, an interlayer insulating layer 260 is formed over the metal layer pattern 250 and the upper surface of the gate insulating layer 240 of the thin film transistor, and passes through the interlayer insulating layer 260 and the gate insulating layer 240. After the contact hole 270 is formed to expose a predetermined portion of the source region and the drain region of the semiconductor layer pattern 230, the upper portion of the interlayer insulating layer 260 and the semiconductor layer pattern ( The source / drain electrode material is deposited and patterned to form a source / drain electrode 280 such that the source / drain regions of 230 are respectively connected.

The source / drain electrode material may include at least one metal material including tungsten (W), molybdenum (Mo), or aluminum (Al) or an alloy thereof.

Next, as shown in FIG. 3C, one of a stacked layer of a silicon oxide film (SiO 2), a silicon nitride film (SiN x), and a silicon oxide film / nitride film (SiO 2 / SiN x) over the entire surface of the substrate including the thin film transistor of the organic light emitting device. To form a passivation film 290 and an acrylic resin, benzocyclobutene resin (BCB), polyimide resin (PI), spin on glass (SOG), acrylate (Acrylate), on the passivation film 290 One selected from the group consisting of polyphenol resins and the like is formed to form a planarization film 310 which is an organic insulating film, and the reflective film 320 material is laminated on the entire surface of the substrate including the planarization film 310.

Next, as shown in FIG. 3D, the passivation layer 290, the planarization layer 310, and the reflection layer 320 are simultaneously formed to form the via hole 400 of the thin film transistor RIE (Inductively Coupled) or ICP (ICP). The via hole 400 may be formed to be collectively etched by a dry etching method using a plasma mode to expose the source / drain electrodes 280 of the thin film transistor.

Here, the reflective film 320 is made of at least one metal material including aluminum (Al), aluminum alloy (Al alloy), silver (Ag), silver alloy (Ag alloy).

Next, as shown in FIG. 3E, the first electrode 340 is connected to the source / drain electrode 280 through the via hole 400 of the thin film transistor, and the reflective film 320 and the first electrode are etched using an etching mask. The electrode 340 is simultaneously etched to form the reflective film pattern 325 and the first electrode pattern 345 to have the same etching surface.

Accordingly, the etching method may be a dry etching method or a wet etching method.

The pixel defining layer 350, which is used as the pixel isolation layer, is coated over the entire surface of the substrate on which the first electrode pattern 345 is formed, and then patterned to expose an opening part of the upper surface of the first electrode pattern 345. (1) is formed, and the organic layer 360 and the second electrode 370 including the organic emission layer are formed on the first electrode pattern 345 exposed in the opening 1.

Here, the pixel definition layer 350 is made of one material selected from the group consisting of acrylic resin, benzocyclobutene (BCB) and polyimide (PI), and the first electrode 340 is made of ITO or IZO transparent. It consists of electrodes.

In addition, when the first electrode 340 is an anode electrode, the second electrode 370 is a cathode electrode. On the contrary, when the first electrode 340 is a cathode electrode, the second electrode 370 becomes an anode electrode.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

As described above, the present invention is characterized in that the via film of the thin film transistor is formed by simultaneously etching the reflective film and the insulating film provided under the reflective film, thereby simplifying the process and reducing the process cost.

Claims (24)

A thin film transistor having a semiconductor layer pattern formed on a substrate, a metal film pattern corresponding to a channel region of the semiconductor layer pattern, and a source / drain electrode in contact with a source / drain region of the semiconductor layer pattern; A planarization film having a via hole formed to expose any one of the source and drain electrodes; A reflective film pattern formed in an area excluding the via hole; A first electrode pattern formed to be connected to any one of the source / drain electrodes through the via hole; And an organic layer including at least an organic emission layer and a second electrode on the first electrode pattern, wherein the first electrode pattern and the reflective layer pattern include the same etching surface. The organic light emitting diode of claim 1, wherein the via hole is exposed from the source / drain electrode to an upper portion of the planarization layer and the reflective layer. The gate electrode of claim 1, wherein the metal layer pattern is formed of a metal material such as chromium (Cr), molybdenum (Mo), or aluminum (Al) or an alloy thereof. An organic light emitting device, characterized in that. The method of claim 1, wherein the planarization film is 1 selected from the group consisting of acrylic resin, benzocyclobutene resin (BCB), polyimide resin (PI), spin on glass (SOG), acrylate (Acrylate), and polyphenol resin. An organic light emitting device, characterized in that the material of the species. The organic light emitting diode of claim 1, wherein the reflective film is one material selected from the group consisting of aluminum (Al), aluminum alloy, aluminum (Ag), and silver alloy (Ag alloy). device. The organic light emitting diode of claim 1, wherein the organic light emitting diode further comprises a pixel defining layer having an opening exposing at least a portion of the first electrode pattern. Providing a substrate; Forming a thin film transistor having a semiconductor layer pattern formed on the substrate and having a metal layer pattern corresponding to a channel region of the semiconductor layer pattern and a source / drain electrode contacting a source / drain region of the semiconductor layer pattern; ; Forming a planarization film over the entire surface of the substrate; Forming a reflective film on the planarization film; Forming a via hole by collectively etching the planarization layer and the reflective layer so that any one of the source / drain electrodes is exposed; Forming a first electrode to be connected to any one of the source / drain electrodes through the via hole; Simultaneously etching the reflective film and the first electrode to form a reflective film pattern and a first electrode pattern; And forming an organic layer and a second electrode including at least an organic emission layer on the first electrode pattern. The method of claim 7, wherein the via hole is collectively etched from the planarization layer and the reflective layer by dry etching. 10. The method of claim 8, wherein the dry etching is a via hole is formed through the RIE or ICP mode. The group of claim 7, wherein the source / drain electrode is formed of molybdenum (Mo), molybdenum alloy (Mo alloy), aluminum (Al), aluminum alloy (Al alloy), silver (Ag), and silver alloy (Ag alloy). The method of manufacturing an organic light emitting device, characterized in that the material selected from. The method of claim 7, wherein the planarization film is 1 selected from the group consisting of acrylic resin, benzocyclobutene resin (BCB), polyimide resin (PI), spin on glass (SOG), acrylate (Acrylate), polyphenol resin Method of manufacturing an organic light emitting device, characterized in that the seed material. The organic light emitting device of claim 7, wherein the reflective film is one material selected from the group consisting of aluminum (Al), aluminum alloy, aluminum alloy, silver alloy, and the like. Method of preparation. A thin film transistor having a semiconductor layer pattern formed on a substrate, a metal film pattern corresponding to a channel region of the semiconductor layer pattern, and a source / drain electrode in contact with a source / drain region of the semiconductor layer pattern; A passivation film having a via hole formed to expose any one of the source / drain electrodes; A planarization film formed on the entire surface of the substrate except for the via hole; A reflective film pattern formed in an area excluding the via hole; A first electrode pattern formed to be connected to any one of the source / drain electrodes through the via hole; And an organic film and a second electrode including at least an organic light emitting layer on the first electrode pattern, wherein the first electrode pattern and the reflective film pattern include the same etching surface. The organic electroluminescent device according to claim 13, wherein the passivation film is made of any one of a silicon oxide film (SiO2), a silicon nitride film (SiNx), and a silicon oxide film / nitride film (SiO2 / SiNx). The method of claim 13, wherein the planarization film is selected from the group consisting of acrylic resin, benzocyclobutene resin (BCB), polyimide resin (PI), spin on glass (SOG), acrylate (Acrylate), and polyphenol resin. An organic light emitting device, characterized in that the seed material. The organic light emitting device of claim 13, wherein the reflective film is one material selected from the group consisting of aluminum (Al), aluminum alloy, aluminum alloy, and silver alloy. . The organic light emitting diode of claim 13, wherein the organic light emitting diode further comprises a pixel defining layer having an opening exposing at least a portion of the first electrode pattern. Providing a substrate; Forming a thin film transistor having a semiconductor layer pattern formed on the substrate and having a metal layer pattern corresponding to a channel region of the semiconductor layer pattern and a source / drain electrode in contact with a source / drain region of the semiconductor layer pattern; Forming a passivation film over the entire surface of the substrate; Forming a planarization film on the passivation film; Forming a reflective film on the planarization film; Forming a via hole by collectively etching the passivation film, the planarization film, and the reflective film so that any one of the source / drain electrodes is exposed; Forming a first electrode to be connected to any one of the source / drain electrodes through the via hole; Simultaneously etching the reflective film and the first electrode to form a reflective film pattern and a first electrode pattern; Forming an organic film and a second electrode including at least an organic light emitting layer on the first electrode. 19. The method of claim 18, wherein the via holes are collectively etched through dry etching on tops of the passivation film, the planarization film, and the reflective film. 20. The method of claim 19, wherein the dry etching is a via hole is formed through the RIE or ICP mode. The group of claim 18, wherein the source / drain electrodes are formed of molybdenum (Mo), molybdenum alloy (Mo alloy), aluminum (Al), aluminum alloy (Al alloy), silver (Ag), and silver alloy (Ag alloy). The method of manufacturing an organic light emitting device, characterized in that the material selected from. 19. The method of claim 18, wherein the passivation film is made of one of a silicon oxide film (SiO2), a silicon nitride film (SiNx), and a silicon oxide film / nitride film (SiO2 / SiNx). The method of claim 18, wherein the planarization film is 1 selected from the group consisting of acrylic resin, benzocyclobutene resin (BCB), polyimide resin (PI), spin on glass (SOG), acrylate (Acrylate), polyphenol resin Method of manufacturing an organic light emitting device, characterized in that the seed material. 19. The organic electroluminescence of claim 18, wherein the reflective film is one material selected from the group consisting of aluminum (Al), aluminum alloy, silver (Ag), silver alloy (Ag alloy). Method of manufacturing the device.

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