KR100707199B1 - H2o 플라즈마를 이용한 단일벽 탄소나노튜브의 저온성장방법 - Google Patents
H2o 플라즈마를 이용한 단일벽 탄소나노튜브의 저온성장방법 Download PDFInfo
- Publication number
- KR100707199B1 KR100707199B1 KR1020050062931A KR20050062931A KR100707199B1 KR 100707199 B1 KR100707199 B1 KR 100707199B1 KR 1020050062931 A KR1020050062931 A KR 1020050062931A KR 20050062931 A KR20050062931 A KR 20050062931A KR 100707199 B1 KR100707199 B1 KR 100707199B1
- Authority
- KR
- South Korea
- Prior art keywords
- carbon nanotubes
- vacuum chamber
- plasma
- walled carbon
- low temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002109 single walled nanotube Substances 0.000 title claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 36
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000003054 catalyst Substances 0.000 claims abstract description 6
- 230000008016 vaporization Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 230000003197 catalytic effect Effects 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002048 multi walled nanotube Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021387 carbon allotrope Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000663 remote plasma-enhanced chemical vapour deposition Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/845—Purification or separation of fullerenes or nanotubes
Abstract
Description
Claims (9)
- 진공챔버를 준비하는 단계;상기 진공챔버 내에 촉매금속이 증착된 기판을 준비하는 단계;H2O를 기상화(vaporization)하여 상기 진공챔버 내에 공급하는 단계;상기 진공챔버 내에 H2O 플라즈마 방전을 발생시키는 단계; 및상기 진공챔버 내에 소스가스를 공급하여 상기 H2O 플라즈마 분위기에서 상기 기판 위에 탄소나노튜브를 성장시키는 단계;를 포함하고,상기 H2O 플라즈마의 파워(power)는 80W 이하로 제어되는 것을 특징으로 하는 단일벽 탄소나노튜브의 성장 방법.
- 삭제
- 제 1 항에 있어서,상기 탄소나노튜브의 성장은 500℃ 이하의 온도범위에서 수행되는 것을 특징으로 하는 단일벽 탄소나노튜브의 성장 방법.
- 제 1 항에 있어서,상기 탄소나노튜브의 성장은 10 내지 600초(sec) 범위의 시간동안 수행되는 것을 특징으로 하는 단일벽 탄소나노튜브의 성장 방법.
- 제 1 항에 있어서,상기 촉매금속은 Fe, Ni 및 Co 으로 이루어지는 그룹에서 선택된 적어도 어느 하나인 것을 특징으로 하는 단일벽 탄소나노튜브의 성장 방법.
- 제 1 항에 있어서,상기 소스가스는 C2H2, CH4, C2H4, C2H6 및 CO 으로 이루어지는 그룹에서 선택된 적어도 어느 하나인 것을 특징으로 하는 단일벽 탄소나노튜브의 성장 방법.
- 제 6 항에 있어서,상기 소스가스는 20 내지 60sccm 범위의 유량으로 공급되는 것을 특징으로 하는 단일벽 탄소나노튜브의 성장 방법.
- 제 1 항에 있어서,상기 기판은 Si, SiO2 또는 글라스 재질의 기판인 것을 특징으로 하는 단일벽 탄소나노튜브의 성장 방법.
- 삭제
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050062931A KR100707199B1 (ko) | 2005-07-12 | 2005-07-12 | H2o 플라즈마를 이용한 단일벽 탄소나노튜브의 저온성장방법 |
CNA2006100092441A CN1895998A (zh) | 2005-07-12 | 2006-02-15 | 在低温下利用h2o等离子体生长单壁碳纳米管的方法 |
US11/393,658 US7799307B2 (en) | 2005-07-12 | 2006-03-31 | Method of growing single-walled carbon nanotubes |
JP2006104404A JP4988234B2 (ja) | 2005-07-12 | 2006-04-05 | シングルウォールカーボンナノチューブの成長方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050062931A KR100707199B1 (ko) | 2005-07-12 | 2005-07-12 | H2o 플라즈마를 이용한 단일벽 탄소나노튜브의 저온성장방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070008030A KR20070008030A (ko) | 2007-01-17 |
KR100707199B1 true KR100707199B1 (ko) | 2007-04-13 |
Family
ID=37608681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050062931A KR100707199B1 (ko) | 2005-07-12 | 2005-07-12 | H2o 플라즈마를 이용한 단일벽 탄소나노튜브의 저온성장방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7799307B2 (ko) |
JP (1) | JP4988234B2 (ko) |
KR (1) | KR100707199B1 (ko) |
CN (1) | CN1895998A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101281168B1 (ko) * | 2007-01-05 | 2013-07-02 | 삼성전자주식회사 | 전계 방출 전극, 이의 제조 방법 및 이를 구비한 전계 방출소자 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748110A (ja) * | 1993-06-03 | 1995-02-21 | Nec Corp | カーボン・ナノチューブの精製法 |
KR20020057636A (ko) * | 2001-01-03 | 2002-07-12 | 엘지전자 주식회사 | 탄소나노튜브를 이용한 전계방출형 표시소자 및 그 제조방법 |
KR20040065751A (ko) * | 2003-01-16 | 2004-07-23 | 엘지전자 주식회사 | 탄소 나노 튜브의 합성 방법 |
CN1541938A (zh) | 2003-11-06 | 2004-11-03 | 大连理工大学 | 一种由煤连续制备碳纳米管材料的方法和装置 |
KR20050052885A (ko) * | 2003-12-01 | 2005-06-07 | (주)케이에이치 케미컬 | 물을 사용하는 고순도 탄소나노튜브의 제조 방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1061041A1 (en) * | 1999-06-18 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Low-temperature thermal chemical vapor deposition apparatus and method of synthesizing carbon nanotube using the same |
TW593730B (en) * | 2002-03-25 | 2004-06-21 | Ind Tech Res Inst | Process of direct low-temperature growth of carbon nanotubes on a substrate |
JP3621928B2 (ja) * | 2002-04-05 | 2005-02-23 | 浩史 滝川 | カーボンナノ微粒子の製造方法,カーボンナノ微粒子の製造装置 |
JP2005022950A (ja) * | 2003-07-04 | 2005-01-27 | Rikizo Hatakeyama | 単層カーボンナノチューブの製造法方法 |
JP2005113361A (ja) * | 2003-08-26 | 2005-04-28 | Nikon Corp | フッ素化アモルファスナノ炭素繊維およびその製造方法、フッ素化アモルファスナノ炭素繊維からなる水素吸蔵材料、水素貯蔵装置および燃料電池システム |
US20050214197A1 (en) * | 2003-09-17 | 2005-09-29 | Molecular Nanosystems, Inc. | Methods for producing and using catalytic substrates for carbon nanotube growth |
US7628974B2 (en) * | 2003-10-22 | 2009-12-08 | International Business Machines Corporation | Control of carbon nanotube diameter using CVD or PECVD growth |
US20060233692A1 (en) * | 2004-04-26 | 2006-10-19 | Mainstream Engineering Corp. | Nanotube/metal substrate composites and methods for producing such composites |
US20070116631A1 (en) * | 2004-10-18 | 2007-05-24 | The Regents Of The University Of California | Arrays of long carbon nanotubes for fiber spinning |
-
2005
- 2005-07-12 KR KR1020050062931A patent/KR100707199B1/ko active IP Right Grant
-
2006
- 2006-02-15 CN CNA2006100092441A patent/CN1895998A/zh active Pending
- 2006-03-31 US US11/393,658 patent/US7799307B2/en active Active
- 2006-04-05 JP JP2006104404A patent/JP4988234B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0748110A (ja) * | 1993-06-03 | 1995-02-21 | Nec Corp | カーボン・ナノチューブの精製法 |
KR20020057636A (ko) * | 2001-01-03 | 2002-07-12 | 엘지전자 주식회사 | 탄소나노튜브를 이용한 전계방출형 표시소자 및 그 제조방법 |
KR20040065751A (ko) * | 2003-01-16 | 2004-07-23 | 엘지전자 주식회사 | 탄소 나노 튜브의 합성 방법 |
CN1541938A (zh) | 2003-11-06 | 2004-11-03 | 大连理工大学 | 一种由煤连续制备碳纳米管材料的方法和装置 |
KR20050052885A (ko) * | 2003-12-01 | 2005-06-07 | (주)케이에이치 케미컬 | 물을 사용하는 고순도 탄소나노튜브의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2007022904A (ja) | 2007-02-01 |
JP4988234B2 (ja) | 2012-08-01 |
US7799307B2 (en) | 2010-09-21 |
KR20070008030A (ko) | 2007-01-17 |
US20070014714A1 (en) | 2007-01-18 |
CN1895998A (zh) | 2007-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100668352B1 (ko) | 질소 도핑된 단일벽 탄소나노튜브의 제조방법 | |
US7824649B2 (en) | Apparatus and method for synthesizing a single-wall carbon nanotube array | |
Maruyama et al. | Low-temperature synthesis of high-purity single-walled carbon nanotubes from alcohol | |
Lee et al. | Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition | |
US7713589B2 (en) | Method for making carbon nanotube array | |
Choi et al. | Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition | |
Chen et al. | Controlling steps during early stages of the aligned growth of carbon nanotubes using microwave plasma enhanced chemical vapor deposition | |
US20100227058A1 (en) | Method for fabricating carbon nanotube array | |
Wang et al. | Nucleation and growth of well-aligned, uniform-sized carbon nanotubes by microwave plasma chemical vapor depositon | |
Chang et al. | Iron and cobalt silicide catalysts-assisted carbon nanostructures on the patterned Si substrates | |
De Zhang et al. | Synthesis of vertically aligned carbon nanotubes films on silicon wafers by pyrolysis of ethylenediamine | |
Matthews et al. | Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers | |
KR20070071177A (ko) | 유리 위에의 단일벽 탄소나노튜브 제조방법 | |
KR101313753B1 (ko) | 탄소나노플레이크의 성장 방법 및 이에 의해 형성된 탄소나노플레이크 구조물 | |
KR100707199B1 (ko) | H2o 플라즈마를 이용한 단일벽 탄소나노튜브의 저온성장방법 | |
Mahmoodi et al. | Various temperature effects on the growth of carbon nanotubes (CNTs) by thermal chemical vapor deposition (TCVD) method | |
Ionescu et al. | Selective growth, characterization, and field emission performance of single-walled and few-walled carbon nanotubes by plasma enhanced chemical vapor deposition | |
Ghosh et al. | Bamboo-shaped aligned CNx nanotubes synthesized using single feedstock at different temperatures and study of their field electron emission | |
Zaretskiy et al. | Growth of carbon nanotubes from Co nanoparticles and C2H2 by thermal chemical vapor deposition | |
Liu et al. | Growth of carbon nanotubes using microwave plasma-enhanced chemical vapor deposition process | |
KR100503123B1 (ko) | 플라즈마 화학기상증착법을 이용한 열린 구조탄소나노튜브 전계방출자의 제조방법 | |
JP2009046325A (ja) | カーボンナノチューブおよびその製造方法 | |
Kim et al. | New DC arc discharge synthesis method for carbon nanotubes using xylene ferrocene as floating catalyst | |
Saito | Structures and synthesis of carbon nanotubes | |
Cojocaru et al. | Study of electron field emission from arrays of multi-walled carbon nanotubes synthesized by hot-wire dc plasma-enhanced chemical vapor deposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130318 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140325 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150313 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160318 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170321 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180320 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190320 Year of fee payment: 13 |