KR100706148B1 - 다양한 홈 패턴을 구비한 섹션을 갖는 화학 기계적 평탄화 또는 연마 패드 - Google Patents

다양한 홈 패턴을 구비한 섹션을 갖는 화학 기계적 평탄화 또는 연마 패드 Download PDF

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KR100706148B1
KR100706148B1 KR1020017014762A KR20017014762A KR100706148B1 KR 100706148 B1 KR100706148 B1 KR 100706148B1 KR 1020017014762 A KR1020017014762 A KR 1020017014762A KR 20017014762 A KR20017014762 A KR 20017014762A KR 100706148 B1 KR100706148 B1 KR 100706148B1
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South Korea
Prior art keywords
polishing pad
groove
sections
section
linear
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KR1020017014762A
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English (en)
Korean (ko)
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KR20020011417A (ko
Inventor
젠슨앨런제이.
토른톤브라이언에스.
Original Assignee
램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/04—Zonally-graded surfaces

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020017014762A 1999-05-21 2000-05-15 다양한 홈 패턴을 구비한 섹션을 갖는 화학 기계적 평탄화 또는 연마 패드 KR100706148B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/316,166 1999-05-21
US09/316,166 US6261168B1 (en) 1999-05-21 1999-05-21 Chemical mechanical planarization or polishing pad with sections having varied groove patterns

Publications (2)

Publication Number Publication Date
KR20020011417A KR20020011417A (ko) 2002-02-08
KR100706148B1 true KR100706148B1 (ko) 2007-04-11

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KR1020017014762A KR100706148B1 (ko) 1999-05-21 2000-05-15 다양한 홈 패턴을 구비한 섹션을 갖는 화학 기계적 평탄화 또는 연마 패드

Country Status (9)

Country Link
US (3) US6261168B1 (US20040097461A1-20040520-C00002.png)
EP (2) EP1329290A3 (US20040097461A1-20040520-C00002.png)
JP (1) JP2003500843A (US20040097461A1-20040520-C00002.png)
KR (1) KR100706148B1 (US20040097461A1-20040520-C00002.png)
AT (1) ATE251524T1 (US20040097461A1-20040520-C00002.png)
DE (1) DE60005816T2 (US20040097461A1-20040520-C00002.png)
SG (1) SG152899A1 (US20040097461A1-20040520-C00002.png)
TW (1) TW462906B (US20040097461A1-20040520-C00002.png)
WO (1) WO2000071297A1 (US20040097461A1-20040520-C00002.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019175475A1 (en) * 2018-03-14 2019-09-19 Mirka Ltd A method and an apparatus for abrading, and products and uses for such

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6296557B1 (en) * 1999-04-02 2001-10-02 Micron Technology, Inc. Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6261168B1 (en) * 1999-05-21 2001-07-17 Lam Research Corporation Chemical mechanical planarization or polishing pad with sections having varied groove patterns
US6585679B1 (en) * 1999-10-21 2003-07-01 Retinalabs.Com System and method for enhancing oxygen content of infusion/irrigation fluid for ophthalmic surgery
US20020068516A1 (en) * 1999-12-13 2002-06-06 Applied Materials, Inc Apparatus and method for controlled delivery of slurry to a region of a polishing device
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US6884153B2 (en) * 2000-02-17 2005-04-26 Applied Materials, Inc. Apparatus for electrochemical processing
US7077721B2 (en) * 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US20030213703A1 (en) * 2002-05-16 2003-11-20 Applied Materials, Inc. Method and apparatus for substrate polishing
US7670468B2 (en) 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7678245B2 (en) 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US6422929B1 (en) * 2000-03-31 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. Polishing pad for a linear polisher and method for forming
US6733373B1 (en) * 2000-03-31 2004-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Polishing assembly for a linear chemical mechanical polishing apparatus and method for forming
US6500054B1 (en) * 2000-06-08 2002-12-31 International Business Machines Corporation Chemical-mechanical polishing pad conditioner
US6475332B1 (en) * 2000-10-05 2002-11-05 Lam Research Corporation Interlocking chemical mechanical polishing system
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
JP2002200555A (ja) * 2000-12-28 2002-07-16 Ebara Corp 研磨工具および該研磨工具を具備したポリッシング装置
US6620031B2 (en) 2001-04-04 2003-09-16 Lam Research Corporation Method for optimizing the planarizing length of a polishing pad
US6857941B2 (en) * 2001-06-01 2005-02-22 Applied Materials, Inc. Multi-phase polishing pad
KR100646702B1 (ko) * 2001-08-16 2006-11-17 에스케이씨 주식회사 홀 및/또는 그루브로 형성된 화학적 기계적 연마패드
KR20030015567A (ko) * 2001-08-16 2003-02-25 에스케이에버텍 주식회사 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드
US6648743B1 (en) * 2001-09-05 2003-11-18 Lsi Logic Corporation Chemical mechanical polishing pad
US7070480B2 (en) 2001-10-11 2006-07-04 Applied Materials, Inc. Method and apparatus for polishing substrates
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
JP3843933B2 (ja) * 2002-02-07 2006-11-08 ソニー株式会社 研磨パッド、研磨装置および研磨方法
US7544114B2 (en) * 2002-04-11 2009-06-09 Saint-Gobain Technology Company Abrasive articles with novel structures and methods for grinding
US20030194959A1 (en) * 2002-04-15 2003-10-16 Cabot Microelectronics Corporation Sintered polishing pad with regions of contrasting density
DE20221899U1 (de) * 2002-05-24 2008-12-11 FIP Forschungsinstitut für Produktionstechnik GmbH Braunschweig Feinschleifmaschine
US8602851B2 (en) * 2003-06-09 2013-12-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled penetration subpad
US6602123B1 (en) * 2002-09-13 2003-08-05 Infineon Technologies Ag Finishing pad design for multidirectional use
JP2005538571A (ja) * 2002-09-25 2005-12-15 ピーピージー インダストリーズ オハイオ， インコーポレイテッド 平坦化するための窓を有する研磨パッド
US20070010169A1 (en) * 2002-09-25 2007-01-11 Ppg Industries Ohio, Inc. Polishing pad with window for planarization
JP2004172296A (ja) * 2002-11-19 2004-06-17 Matsushita Electric Ind Co Ltd 半導体ウェーハの研磨方法及びその研磨パッド
EP1594656B1 (en) * 2003-02-18 2007-09-12 Parker-Hannifin Corporation Polishing article for electro-chemical mechanical polishing
US7121937B2 (en) 2003-03-17 2006-10-17 3M Innovative Properties Company Abrasive brush elements and segments
TWI238100B (en) * 2003-09-29 2005-08-21 Iv Technologies Co Ltd Polishing pad and fabricating method thereof
US20050173259A1 (en) * 2004-02-06 2005-08-11 Applied Materials, Inc. Endpoint system for electro-chemical mechanical polishing
US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
KR100578133B1 (ko) * 2003-11-04 2006-05-10 삼성전자주식회사 화학적 기계적 연마 장치 및 이에 사용되는 연마 패드
JP4641781B2 (ja) * 2003-11-04 2011-03-02 三星電子株式会社 不均一強度を有する研磨面を使用した化学的機械的研磨装置および方法
US7186164B2 (en) * 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US7086936B1 (en) * 2003-12-22 2006-08-08 Lam Research Corporation Linear chemical mechanical planarization (CMP) system and method for planarizing a wafer in a single CMP module
US6951510B1 (en) * 2004-03-12 2005-10-04 Agere Systems, Inc. Chemical mechanical polishing pad with grooves alternating between a larger groove size and a smaller groove size
US6935938B1 (en) 2004-03-31 2005-08-30 Lam Research Corporation Multiple-conditioning member device for chemical mechanical planarization conditioning
TWI293266B (en) * 2004-05-05 2008-02-11 Iv Technologies Co Ltd A single-layer polishing pad and a method of producing the same
TWI254354B (en) * 2004-06-29 2006-05-01 Iv Technologies Co Ltd An inlaid polishing pad and a method of producing the same
US20060079159A1 (en) * 2004-10-08 2006-04-13 Markus Naujok Chemical mechanical polish with multi-zone abrasive-containing matrix
US20070197132A1 (en) * 2006-02-15 2007-08-23 Applied Materials, Inc. Dechuck using subpad with recess
TWI321503B (en) 2007-06-15 2010-03-11 Univ Nat Taiwan Science Tech The analytical method of the effective polishing frequency and number of times towards the polishing pads having different grooves and profiles
TWI409868B (zh) * 2008-01-30 2013-09-21 Iv Technologies Co Ltd 研磨方法、研磨墊及研磨系統
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
US8360823B2 (en) * 2010-06-15 2013-01-29 3M Innovative Properties Company Splicing technique for fixed abrasives used in chemical mechanical planarization
CN103109355B (zh) * 2010-09-15 2016-07-06 株式会社Lg化学 用于cmp的研磨垫
CN102615571A (zh) * 2011-01-28 2012-08-01 中芯国际集成电路制造(上海)有限公司 抛光装置及方法
TWI492818B (zh) * 2011-07-12 2015-07-21 Iv Technologies Co Ltd 研磨墊、研磨方法以及研磨系統
TWI599447B (zh) 2013-10-18 2017-09-21 卡博特微電子公司 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊
TWI769988B (zh) * 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
CN113579990B (zh) * 2021-07-30 2022-07-26 上海积塔半导体有限公司 固定研磨粒抛光装置及抛光方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0647678A (ja) * 1992-06-25 1994-02-22 Kawasaki Steel Corp 湿式研磨用エンドレスベルト
JPH1170463A (ja) * 1997-05-15 1999-03-16 Applied Materials Inc 化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177908A (en) 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5020283A (en) 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
US5441598A (en) 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US5672095A (en) * 1995-09-29 1997-09-30 Intel Corporation Elimination of pad conditioning in a chemical mechanical polishing process
US5690540A (en) 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
JPH09270399A (ja) * 1996-03-29 1997-10-14 Nippon Steel Corp 基板研磨方法及びその装置
US5645469A (en) 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
US5722877A (en) * 1996-10-11 1998-03-03 Lam Research Corporation Technique for improving within-wafer non-uniformity of material removal for performing CMP
JPH10156705A (ja) 1996-11-29 1998-06-16 Sumitomo Metal Ind Ltd 研磨装置および研磨方法
US5842910A (en) 1997-03-10 1998-12-01 International Business Machines Corporation Off-center grooved polish pad for CMP
US6736714B2 (en) 1997-07-30 2004-05-18 Praxair S.T. Technology, Inc. Polishing silicon wafers
US6093651A (en) 1997-12-23 2000-07-25 Intel Corporation Polish pad with non-uniform groove depth to improve wafer polish rate uniformity
JP2000000755A (ja) * 1998-06-16 2000-01-07 Sony Corp 研磨パッド及び研磨方法
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
US6261168B1 (en) * 1999-05-21 2001-07-17 Lam Research Corporation Chemical mechanical planarization or polishing pad with sections having varied groove patterns

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0647678A (ja) * 1992-06-25 1994-02-22 Kawasaki Steel Corp 湿式研磨用エンドレスベルト
JPH1170463A (ja) * 1997-05-15 1999-03-16 Applied Materials Inc 化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
06047678
11070463

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019175475A1 (en) * 2018-03-14 2019-09-19 Mirka Ltd A method and an apparatus for abrading, and products and uses for such
EP3765241A4 (en) * 2018-03-14 2021-12-29 Mirka Ltd. A method and an apparatus for abrading, and products and uses for such

Also Published As

Publication number Publication date
TW462906B (en) 2001-11-11
SG152899A1 (en) 2009-06-29
WO2000071297A1 (en) 2000-11-30
EP1178872A1 (en) 2002-02-13
KR20020011417A (ko) 2002-02-08
US6634936B2 (en) 2003-10-21
EP1329290A2 (en) 2003-07-23
JP2003500843A (ja) 2003-01-07
US20020028646A1 (en) 2002-03-07
DE60005816T2 (de) 2004-05-19
EP1329290A3 (en) 2003-07-30
DE60005816D1 (de) 2003-11-13
EP1178872B1 (en) 2003-10-08
US6585579B2 (en) 2003-07-01
US20010031615A1 (en) 2001-10-18
ATE251524T1 (de) 2003-10-15
US6261168B1 (en) 2001-07-17

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