KR100698404B1 - 회전식 히터구조를 가지는 화학기상증착장치 및 그제어방법 - Google Patents
회전식 히터구조를 가지는 화학기상증착장치 및 그제어방법 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 12
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000012495 reaction gas Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 5
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000006200 vaporizer Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000005137 deposition process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920006127 amorphous resin Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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Abstract
Description
Claims (9)
- 웨이퍼(W)를 증착시키기 위해 공간을 제공하는 반응챔버(C)와 상기 반응챔버(C)를 지지하는 챔버지지부(100)와, 상기 반응챔버(C) 내부에 반응가스를 주입하기 위한 샤워헤드와 , 상기 웨이퍼(W)를 가열하기 위한 히터(H)와 상기 히터(H)를 지지하기 위한 히터 지지부(200)로 구성된 화학기상증착장치로서,상기 히터(H)를 회전시키기 위해 회전력을 공급하는 모터(310)와 상기 모터(310)의 회전력을 전달하는 회전축(330)과, 상기 회전축(330)으로부터 회전력을 전달받아 상기 히터(H)를 회전하게하는 회전대(340)로 구성되는 히터회전부(300)를 더 포함하는 것을 특징으로하는 회전식 히터구조를 가지는 화학기상증착장치.
- 제1항에 있어서,상기 챔버지지부(100)는 상기 챔버(C)의 승하강에 따라 길이가 탄력적으로 변하는 벨로우즈(111)와,상기 벨로우즈(111)와 상기 챔버(C)를 연결하는 연결부(112)와,상기 벨로우즈(111)의 하면에 설치되는 한편 이송부(400)의 이송판(430)에 걸림되는 안착부(113)와,상기 안착부(113)의 하면에 설치되어 지지하는 한편 내측에는 기밀을 유지하기 위한 기밀부재(114)가 설치되어 있는 하부지지대(115)로 구성되는 것을 특징으 로 하는 회전식 히터구조를 가지는 화학기상증착장치.
- 제 2항에 있어서,상기 히터회전부(300)의 회전대(340)의 하부에는 상기 기밀부재(114)와 접촉하여 기밀을 유지함과 동시에 상기 회전대(340)의 회전에 의해 회전하게 되는 로테이션 실 샤프트(341)가 설치되는 것을 특징으로 하는 회전식 히터구조를 가지는 화학기상증착장치.
- 제3항에 있어서,상기 로테이션 실 샤프트(341)는 원통형상으로 그 내부는 비어있어 상기 회전축(330)이 삽입되는 한편 고정구(342)가 관통되기 위한 고정홀(341a)이 형성되어 있는 것을 특징으로 하는 회전식 히터구조를 가지는 화학기상증착장치.
- 제3항에 있어서,상기 로테이션 실 샤프트(341)는 테플론 또는 PEEK 또는 스테인레스 또는 알루미늄중 어느 하나를 그 재질로 하는 것을 특징으로 하는 회전식 히터구조를 가지는 화학기상증착장치.
- 제1항에 있어서,상기 회전축(330)에 설치되어 회전위치를 인식하게 하는 위치표시부재(321) 와, 상기 위치표시부재(321)로부터 위치를 인식하는 위치인식센서(322)로 구성되는 위치센서 어셈블리(320)가 설치되는 것을 특징으로 하는 회전식 히터구조를 가지는 화학기상증착장치.
- 제 6항에 기재된 회전식 히터구조를 가지는 화학기상증착장치를 제어하기 위한 방법으로서,가스공급부(G)로부터 가스공급 및 차단을 제어하기 위한 가스제어부(510)와,상기 위치센서 어셈블리(320)로부터 위치정보를 전송받는 위치센서 제어부(520)와,이송부(400)의 이송모터(440)를 제어하기 위한 이송모터제어부(550)와,상기 히터회전부(300)의 모터(310)를 제어하기 위한 히터회전모터제어부(560) 및상기 가스제어부(510), 위치센서 제어부(520), 히터제어부(530), 히터전원공급부(540), 이송모터제어부(550), 히터회전모터제어부(560)를 제어하기 위한 중앙처리장치(570)로 구성되어,증착작업을 시작하는 경우 상기 중앙처리장치(570)로부터 이송모터(440)에 신호를 보내어 회전력을 이송나사(420)에 공급함에 의해 이송판(430)을 상승시키고, 이에 의해 히터(H)를 상승시키는 히터상승단계(S610)와,상기 중앙처리장치(570)로부터 상기 가스제어부(510)에 신호를 보내어 가스공급을 하게 하는 가스공급시작단계(S620)와,상기 중앙처리장치(570)로부터 상기 히터회전모터제어부(560)에 신호를 보내어 상기 히터(H)를 회전시키는 회전시작단계(S630)와,증착작업이 종료된 경우 상기 중앙처리장치(570)로부터 상기 가스제어부(510)에 신호를 보내어 가스공급을 종료하게 하는 가스공급종료단계(S640)와,상기 중앙처리장치(570)가 상기 위치센서제어부(520)로부터 신호를 받아 현재 히터(H)의 위치가 시작위치에 있는지를 확인한 후 상기 히터회전모터제어부(560)에 신호를 보내어 상기 히터(H)의 회전을 종료시키는 홈위치 확인 및 회전종료단계(S650) 및,상기 중앙처리장치(570)로부터 이송모터(440)에 신호를 보내어 반대의 회전력을 이송나사(420)에 공급함에 의해 이송판(430)을 하강시키고, 이에 의해 히터(H)를 하강시키는 히터하강단계(S660)로 구성되는 것을 특징으로 하는 회전식 히터구조를 가지는 화학기상증착장치의 제어방법.
- 제 7항에 있어서,상기 회전시작단계(S630)는 저속으로 회전을 시작한 후 고속으로 가속하고,상기 홈위치 확인 및 회전종료단계(S650)에서는 고속에서 저속으로 감속하여 회전을 종료하는 것을 특징으로 하는 회전식 히터구조를 가지는 화학기상증착장치의 제어방법.
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Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050054888A KR100698404B1 (ko) | 2005-06-24 | 2005-06-24 | 회전식 히터구조를 가지는 화학기상증착장치 및 그제어방법 |
PCT/KR2006/002445 WO2006137719A1 (en) | 2005-06-24 | 2006-06-23 | Cvd apparatus which has rotation type heater and the control method |
CN200680022407A CN100590796C (zh) | 2005-06-24 | 2006-06-23 | 具有转动型加热器的cvd装置及其控制方法 |
US11/993,128 US8585823B2 (en) | 2005-06-24 | 2006-06-23 | CVD apparatus having a rotating heater |
JP2008518043A JP4825872B2 (ja) | 2005-06-24 | 2006-06-23 | 回転式ヒータ構造を有する化学気相蒸着装置およびその制御方法 |
JP2011171147A JP5279097B2 (ja) | 2005-06-24 | 2011-08-04 | 回転式ヒータ構造を有する化学気相蒸着装置 |
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Application Number | Priority Date | Filing Date | Title |
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KR1020050054888A KR100698404B1 (ko) | 2005-06-24 | 2005-06-24 | 회전식 히터구조를 가지는 화학기상증착장치 및 그제어방법 |
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Publication Number | Publication Date |
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KR20060135168A KR20060135168A (ko) | 2006-12-29 |
KR100698404B1 true KR100698404B1 (ko) | 2007-03-23 |
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US (1) | US8585823B2 (ko) |
JP (2) | JP4825872B2 (ko) |
KR (1) | KR100698404B1 (ko) |
CN (1) | CN100590796C (ko) |
WO (1) | WO2006137719A1 (ko) |
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KR101805107B1 (ko) * | 2011-04-26 | 2017-12-05 | 엘지이노텍 주식회사 | 발광소자 제조장치 및 발광소자 |
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KR100844542B1 (ko) * | 2007-02-01 | 2008-07-08 | 세메스 주식회사 | 기판 처리 장치 |
CN101838801A (zh) * | 2010-05-28 | 2010-09-22 | 上海宏力半导体制造有限公司 | 加热器驱动螺杆检测装置及方法 |
JP2014507788A (ja) * | 2010-12-20 | 2014-03-27 | サムスン エレクトロニクス カンパニー リミテッド | 化学気相蒸着装置及びこれを用いた発光素子の製造方法 |
CN103343334A (zh) * | 2013-07-18 | 2013-10-09 | 湖南顶立科技有限公司 | 一种气相沉积方法 |
HK1212853A2 (zh) * | 2015-08-10 | 2016-06-17 | Shirhao Ltd | 回收液體物質的裝置和方法 |
KR102519544B1 (ko) | 2017-12-07 | 2023-04-07 | 삼성전자주식회사 | 웨이퍼 로딩 장치 및 막 형성 장치 |
WO2021055768A1 (en) * | 2019-09-19 | 2021-03-25 | Applied Materials, Inc. | Apparatus and methods for motor shaft and heater leveling |
KR102325102B1 (ko) * | 2020-06-18 | 2021-11-11 | 주식회사 플레이티지 | 히터 척 오토 레벨링 장치 |
CN112647062B (zh) * | 2020-12-11 | 2021-07-27 | 无锡邑文电子科技有限公司 | 一种碳化硅cvd工艺腔体装置及使用方法 |
US20220316066A1 (en) * | 2021-03-31 | 2022-10-06 | Applied Materials, Inc. | Level monitoring and active adjustment of a substrate support assembly |
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JP2011233929A (ja) | 2011-11-17 |
JP5279097B2 (ja) | 2013-09-04 |
WO2006137719A1 (en) | 2006-12-28 |
US20100227057A1 (en) | 2010-09-09 |
CN100590796C (zh) | 2010-02-17 |
JP4825872B2 (ja) | 2011-11-30 |
KR20060135168A (ko) | 2006-12-29 |
US8585823B2 (en) | 2013-11-19 |
CN101203941A (zh) | 2008-06-18 |
JP2008544089A (ja) | 2008-12-04 |
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