KR100694669B1 - 광 검출용 반도체 패키지 및 그 제작방법 - Google Patents
광 검출용 반도체 패키지 및 그 제작방법 Download PDFInfo
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- KR100694669B1 KR100694669B1 KR1020060006671A KR20060006671A KR100694669B1 KR 100694669 B1 KR100694669 B1 KR 100694669B1 KR 1020060006671 A KR1020060006671 A KR 1020060006671A KR 20060006671 A KR20060006671 A KR 20060006671A KR 100694669 B1 KR100694669 B1 KR 100694669B1
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- receiving groove
- substrate
- light
- metal pattern
- solder bump
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910000679 solder Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 239000011521 glass Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
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- B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
- B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
- B42D15/00—Printed matter of special format or style not otherwise provided for
- B42D15/0066—Timetables, lists or forms for shooter enlistment, e.g. for use at competitions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (8)
- 소정 범위의 파장을 가지는 광에 대해 대체로 투명한 재료로 구성되는 기판-상기 기판은 소정의 크기를 갖는 수용홈 및 상기 수용홈에 연해서 형성되는 안착면을 구비함-과;상기 수용홈의 내부에서부터 상기 안착면까지 연장되는 금속패턴과;소정 범위의 파장을 갖는 광을 검출하는 광 검출 영역 및 상기 광 검출 영역과 전기적으로 결합되는 솔더 범프 패드를 구비하는 광 검출용 다이- 상기 광 검출용 다이는 상기 수용홈의 내부에 삽입되어 상기 광 검출 영역이 상기 수용홈 내부에 대향하게 배치되며 상기 솔더 범프 패드가 상기 금속패턴 상에 결합됨-와;상기 안착면에 위치한 상기 금속패턴 상에 형성되며 외부 회로에 실장하기 위한 솔더 범프를 구비하는 광 검출용 반도체 패키지.
- 제 1 항에 있어서,상기 수용홈은 저면과 상기 저면에서 연장되는 경사면을 구비하며,상기 금속패턴은 상기 저면의 일부 및 상기 경사면에 형성되어 상기 안착면 까지 연장되는 광 검출용 반도체 패키지.
- 제 1 항에 있어서,상기 기판의 일면 또는 양면에는 상기 소정 범위의 파장 내의 광 투과율을 변화시키기 위한 박막 코팅을 가지는 광 검출용 반도체 패키지.
- (a) 소정 범위의 파장을 가지는 광에 대해 대체로 투명한 재료로 구성되는 기판을 제공하는 단계;(b) 상기 기판의 소정의 위치에 수용홈을 형성하는 단계;(c) 상기 수용홈의 내부에서 연장하여 상기 기판의 안착면까지 연장되는 금속패턴을 형성하는 단계와;(d) 상기 기판의 안착면상에 형성된 상기 금속패턴 상에 형성되며 외부 회로에 실장되기 위한 솔더 범프를 형성하는 단계;(e) 소정 범위의 파장을 검출하는 광 검출 영역 및 상기 광 검출 영역과 전기적으로 결합되는 솔더 범프 패드를 구비하는 광 검출용 다이를 제공하는 단계와;(f) 상기 광 검출용 다이를 상기 수용홈의 내부에 삽입하여 상기 솔더 범프 패드를 상기 금속 패턴 상에 결합하는 단계를 포함하는 광 검출용 반도체 패키지 제작방법.
- 제 4 항에 있어서,상기 수용홈은 습식 에칭에 의해 형성되는 광 검출용 반도체 패키지 제작방법.
- 제 5 항에 있어서,습식 에칭은 6:1이하의 묽은 HF용액을 사용하거나 BHF를 사용하는 광 검출용 반도체 패키지 제작방법.
- 제 4 항에 있어서,상기 수용홈은 저면과 상기 저면에서 연장되어 상기 안착면까지 연장되는 경사면을 구비하고,상기 수용홈은 건식 에칭에 의해 상기 기판의 일부를 식각한 후 습식 에칭을 이용하여 상기 경사면의 경사각을 조정하는 광 검출용 반도체 패키지 제작방법.
- 제 4 항에 있어서,상기 기판은 복수의 단위 기판으로 구성되며, 상기 (f)단계 수행 후 상기 기판이 절단되는 광 검출용 반도체 패키지 제작방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020060006671A KR100694669B1 (ko) | 2006-01-23 | 2006-01-23 | 광 검출용 반도체 패키지 및 그 제작방법 |
PCT/KR2007/000389 WO2007083976A1 (en) | 2006-01-23 | 2007-01-23 | Semiconductor package for photo-sensing and fabricating method therefore |
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KR1020060006671A KR100694669B1 (ko) | 2006-01-23 | 2006-01-23 | 광 검출용 반도체 패키지 및 그 제작방법 |
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KR100694669B1 true KR100694669B1 (ko) | 2007-03-13 |
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WO (1) | WO2007083976A1 (ko) |
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JP5925432B2 (ja) * | 2011-05-10 | 2016-05-25 | エスアイアイ・セミコンダクタ株式会社 | 光学センサおよび光学センサの製造方法 |
US20220254824A1 (en) * | 2019-05-15 | 2022-08-11 | Sony Semiconductor Solutions Corporation | Semiconductor package, semiconductor package manufacturing method, and electronic device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11238828A (ja) | 1998-02-20 | 1999-08-31 | Toshiba Corp | Bga型パッケージの半導体装置およびその製造方法、実装装置 |
JP2000077563A (ja) | 1998-08-31 | 2000-03-14 | Sharp Corp | 半導体装置およびその製造方法 |
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KR100757659B1 (ko) * | 2001-11-06 | 2007-09-10 | 매그나칩 반도체 유한회사 | 이미지 센서의 패키지 |
JP3732194B2 (ja) * | 2003-09-03 | 2006-01-05 | 沖電気工業株式会社 | 半導体装置 |
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2006
- 2006-01-23 KR KR1020060006671A patent/KR100694669B1/ko active IP Right Grant
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- 2007-01-23 WO PCT/KR2007/000389 patent/WO2007083976A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11238828A (ja) | 1998-02-20 | 1999-08-31 | Toshiba Corp | Bga型パッケージの半導体装置およびその製造方法、実装装置 |
JP2000077563A (ja) | 1998-08-31 | 2000-03-14 | Sharp Corp | 半導体装置およびその製造方法 |
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