WO2007083976A1 - Semiconductor package for photo-sensing and fabricating method therefore - Google Patents

Semiconductor package for photo-sensing and fabricating method therefore Download PDF

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Publication number
WO2007083976A1
WO2007083976A1 PCT/KR2007/000389 KR2007000389W WO2007083976A1 WO 2007083976 A1 WO2007083976 A1 WO 2007083976A1 KR 2007000389 W KR2007000389 W KR 2007000389W WO 2007083976 A1 WO2007083976 A1 WO 2007083976A1
Authority
WO
WIPO (PCT)
Prior art keywords
photo
sensing
holding recess
substrate
semiconductor package
Prior art date
Application number
PCT/KR2007/000389
Other languages
French (fr)
Inventor
Hun-Joon Jung
Original Assignee
Mtekvision Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mtekvision Co., Ltd. filed Critical Mtekvision Co., Ltd.
Publication of WO2007083976A1 publication Critical patent/WO2007083976A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B42—BOOKBINDING; ALBUMS; FILES; SPECIAL PRINTED MATTER
    • B42D—BOOKS; BOOK COVERS; LOOSE LEAVES; PRINTED MATTER CHARACTERISED BY IDENTIFICATION OR SECURITY FEATURES; PRINTED MATTER OF SPECIAL FORMAT OR STYLE NOT OTHERWISE PROVIDED FOR; DEVICES FOR USE THEREWITH AND NOT OTHERWISE PROVIDED FOR; MOVABLE-STRIP WRITING OR READING APPARATUS
    • B42D15/00—Printed matter of special format or style not otherwise provided for
    • B42D15/0066—Timetables, lists or forms for shooter enlistment, e.g. for use at competitions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes

Definitions

  • the present invention relates to a semiconductor package for photo-sensing and
  • a semiconductor device for photo-sensing is generally mounted on a ceramic
  • FIG. 1 shows a schematic cross-sectional view of a ceramic leadless chip carrier
  • CCC which is a form of photo-sensing semiconductor package. As illustrated in Fig.
  • a photo-sensing semiconductor die is mounted using epoxy, etc., inside edges covered
  • wire bonding 8 is used to connect the photo-sensing die 2 to the ceramic substrate 4.
  • the size of the package is not sufficiently small for use in certain portable applications such as cameras equipped on mobile terminals, the key characteristics of which are small
  • metal wiring 53 and an insulation film 55 for its protection are formed
  • bump pads 63 illustrated in Fig. 3, is flip-chip mounted on the glass substrate 51 above,
  • solder bumps 57 is also increased, as illustrated in Fig. 4. Due to the characteristics of
  • An aspect of the present invention is to provide a semiconductor package for
  • Another aspect of the present invention is to provide a semiconductor package
  • bumps mounted on the substrate can be reduced to allow a simple process.
  • a semiconductor package for photo-sensing according to one aspect of the disclosure
  • present invention includes a substrate made of a material substantially transparent with
  • bump pad is coupled onto the metal pattern; and a solder bump formed on the metal
  • the semiconductor package for photo-sensing according to certain aspects of the
  • the holding recess may have a bottom surface and an inclined surface extending from the
  • the metal pattern may be formed on a portion of the bottom surface
  • the substrate may further be included on one or both surfaces of the substrate for altering the light
  • a substrate made of a material
  • photo-sensing die having a photo-sensing region that senses wavelengths within a
  • the holding recess may be formed by wet etching.
  • the wet etching may be formed by wet etching.
  • the holding recess may have a bottom surface and an inclined surface extending from the bottom
  • holding recess may be formed by etching a portion of the substrate by
  • the substrate may be formed as a plurality of unit substrates, and the
  • method may further include cutting the substrate after the photo-sensing die is mounted
  • the present invention can provide a semiconductor package for photo-sensing
  • the present invention can also provide a semiconductor package for
  • mounted on the substrate can be reduced to allow a simple process.
  • Fig. 1 is a schematic cross-sectional view of a CLCC package according to prior
  • Fig. 2 is a cross-sectional view of an uncut substrate in prior art for a
  • Fig. 3 is a cross-sectional view of an uncut semiconductor wafer in prior art for a photo-sensing semiconductor package.
  • Fig. 4 is a cross-sectional view illustrating cut semiconductor dice mounted by a
  • Fig. 5 is a cross-sectional view illustrating a holding recess formed in a substrate
  • Fig. 6 is a cross-sectional view illustrating a metal pattern formed inside the
  • Fig. 7 is a cross-sectional view illustrating solder bumps formed on the metal
  • Fig. 8 is a cross-sectional view illustrating a photo-sensing die mounted on the
  • Fig. 9 is a cross-sectional view illustrating the semiconductor package for
  • photo-sensing die 17 is formed in a substrate 11 made of a material that is on the whole
  • the photo-sensing die 17 is inserted inside the holding recess 21 and connected to
  • the disposing surfaces 27 of the package may be reduced.
  • the substrate 11 has the form of a wafer or panel having a
  • requirements for the material of the substrate 11 include transparency, mechanical
  • the material for the substrate 11 may
  • the substrate material include, for example, glass, quartz, sapphire, silicon, or other infrared-transparent materials.
  • the selection of the substrate material depends on the wavelengths of the range
  • the light of such wavelengths may include ultraviolet or visible rays, etc.
  • borosilicate glass is borosilicate glass.
  • Borosilicate glass has the advantages of low cost as well as high availability.
  • thickness of the substrate 11 is approximately 300 ⁇ 500 ⁇ m.
  • a thin film layer In order to increase the light transmissivity of the substrate 11 , a thin film layer
  • ARC coating
  • a holding recess 21 On a predetermined position of the substrate 11 is formed a holding recess 21 , in
  • recess 21 has a bottom surface 23 and inclined surfaces 25 that extend from the bottom
  • forming the holding recess 21 may use dry etching or wet etching.
  • dry etching or wet etching.
  • holding recess 21 may be formed by wet etching after patterning using a photo mask.
  • the wet etching may use a dilute HF solution of 6: 1 or lower or may use BHF.
  • BHF refers to
  • Buttered HF which is a compound having the composition of 34.6%(wt)NH4F 6.8%, HF
  • the inclination of the inclined surfaces 25 may be adjusted using wet etching after etching
  • the inclined surfaces 25 facilitate the forming
  • the depth and width of the holding recess 21 vary greatly according to the size
  • the configuration may be
  • metal pads 13 are formed on the substrate 11. That is, metal
  • pads 13 having conductive properties are formed on the bottom surface 23 of the holding
  • metal pads 13 allow the die 17 mounted inside the holding recess 21 to be electrically
  • the method for forming the metal pads 13 may include any of a
  • solder bumps 15 are formed on the metal pads 13 positioned
  • solder bumps 15 allow the final fabricated package to
  • solder bumps 15 may be connected with an external circuit.
  • the method for forming the solder bumps 15 may
  • solder paste printing a predetermined amount of solder material include the method of solder paste printing a predetermined amount of solder material
  • a material that may be used for the solder bumps 15 may include generally tin-based
  • solders such as tin-lead, high lead (a tin-lead solder in which lead has a weight
  • solder bumps 15 Since the solder bumps 15, according to the present embodiment, does not need
  • the size of the disposing surfaces 27 may be reduced.
  • the size of the solder bumps 15 may be reduced, the processes may be simplified.
  • the photo-sensing die 17 is mounted inside the holding recess
  • solder bump pads 19 On one surface of the die 17 are equipped solder bump pads 19, and these solder bump
  • the method of mounting the die 17 may include a reflow process, etc.
  • the thickness of the solder bump pads 19 may be approximately
  • the photo-sensing die 17 maybe obtained from a photo-sensing semiconductor
  • a photo-sensing semiconductor wafer has a plurality of dice, where
  • each die has an integrated circuit formed on the upper surface of the wafer, as is so in
  • Each die has a plurality of solder bonding pads.
  • the photo-sensing die 17 is fabricated by
  • Fig. 8 represents one die 17
  • the photo-sensing die 17 has a photo-sensing
  • photo-sensing region is arranged to face the bottom surface 23 of the holding recess 21.
  • semiconductor package is moved by a pick-and-place technique to a wrapping medium
  • the present embodiment is mounted on a printed circuit board 29.
  • the semiconductor package 30 thus mounted on the printed circuit board 29 is applicable to all forms of optic
  • sensors or photo-sensors fabricated by any of a variety of technologies such as CCD or
  • CMOS complementary metal-oxide-semiconductor
  • a semiconductor package such as that of the present embodiment is
  • sensors such as single phase diodes or four-phase diodes used in motion detectors, light

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

A semiconductor package for photo-sensing and fabricating method therefor are disclosed. A semiconductor package for photo-sensing that includes a substrate made of a material substantially transparent with respect to light having a wavelength within a predetermined range, where the substrate has a holding recess and a disposing surface formed adjoining the holding recess; a metal pattern extending from inside the holding recess to the disposing surface; a photo-sensing die having a photo-sensing region that senses light having a wavelength within a predetermined range and a solder bump pad electrically coupled with the photo-sensing region, where the photo-sensing die is inserted inside the holding recess and arranged such that the photo-sensing region faces the inside of the holding recess, and the solder bump pad is coupled onto the metal pattern; and a solder bump formed on the metal pattern positioned on the disposing surface for mounting on an external circuit, can not only decrease the volume but also simplify the fabrication process.

Description

[DESCRIPTION]
[Invention Title]
SEMICONDUCTOR PACKAGE FOR PHOTO-SENSING AND
FABRICATING METHOD THEREFORE
[Technical Field]
The present invention relates to a semiconductor package for photo-sensing and
a fabricating method therefor.
[Background Art]
A semiconductor device for photo-sensing is generally mounted on a ceramic
package. Fig. 1 shows a schematic cross-sectional view of a ceramic leadless chip carrier
(CLCC), which is a form of photo-sensing semiconductor package. As illustrated in Fig.
1, a photo-sensing semiconductor die is mounted using epoxy, etc., inside edges covered
with a glass lid 6 on a ceramic substrate 4, with the surface facing upwards. In general,
wire bonding 8 is used to connect the photo-sensing die 2 to the ceramic substrate 4.
There are solderable pads 10 on the bottom of the ceramic substrate 4 that allow the
package to be connected to a circuit board.
Drawbacks of a package such as that described above are that the cost is high and
that the size of the package is not sufficiently small for use in certain portable applications such as cameras equipped on mobile terminals, the key characteristics of which are small
size and light weight. Another drawback is that the photo-sensing device is not placed
with high precision with respect to the focal plane of the lens, for example, a major reason
for which is that the photo-sensing die is mounted with epoxy, etc., and the package itself
is mounted using solder paste.
Methods for resolving such problems are illustrated in Fig. 2 to Fig. 4. As
illustrated in Fig. 2, metal wiring 53 and an insulation film 55 for its protection are formed
on glass substrate 51 using a glass wafer. Then, an image sensor chip 61 having solder
bump pads 63, illustrated in Fig. 3, is flip-chip mounted on the glass substrate 51 above,
to fabricate a semiconductor chip package as illustrated in Fig. 4. Then, by cutting along
the cutting lines (represented by dotted lines), separate semiconductor packages are
fabricated.
However, in such a semiconductor chip package, since there is a height
discrepancy between the glass substrate 51 and the image sensor chip 61, the height of the
solder bumps 57 is also increased, as illustrated in Fig. 4. Due to the characteristics of
solder bump processes, an increased height of the solder bumps leads to an increased
width, resulting in an increase in the overall volume of the package.
[Disclosure]
[Technical Problem] An aspect of the present invention is to provide a semiconductor package for
photo-sensing and a fabricating method therefor, which allow a reduced volume.
Another aspect of the present invention is to provide a semiconductor package
for photo-sensing and a fabricating method therefor, with which the size of the solder
bumps mounted on the substrate can be reduced to allow a simple process.
[Technical Solution]
A semiconductor package for photo-sensing, according to one aspect of the
present invention, includes a substrate made of a material substantially transparent with
respect to light having a wavelength within a predetermined range, where the substrate
has a holding recess and a disposing surface formed adjoining the holding recess; a metal
pattern extending from inside the holding recess to the disposing surface; a photo-sensing
die having a photo-sensing region that senses light having a wavelength within a
predetermined range and a solder bump pad electrically coupled with the photo-sensing
region, where the photo-sensing die is inserted inside the holding recess and arranged
such that the photo-sensing region faces the inside of the holding recess, and the solder
bump pad is coupled onto the metal pattern; and a solder bump formed on the metal
pattern positioned on the disposing surface for mounting on an external circuit.
The semiconductor package for photo-sensing according to certain aspects of the
present invention may include one or more of the following features. For example, the holding recess may have a bottom surface and an inclined surface extending from the
bottom surface, and the metal pattern may be formed on a portion of the bottom surface
and the inclined surface and may extend to the disposing surface. Also, a thin film coating
may further be included on one or both surfaces of the substrate for altering the light
transmissivity within the predetermined range of wavelengths.
A method of fabricating a semiconductor package for photo-sensing, according
to an aspect of the present invention, includes providing a substrate made of a material
substantially transparent with respect to light having a wavelength within a
predetermined range; forming a holding recess in a predetermined position of the
substrate; forming a metal pattern extending from inside the holding recess to a disposing
surface of the substrate; forming a solder bump on the metal pattern formed on the
disposing surface of the substrate for mounting on an external circuit; providing a
photo-sensing die having a photo-sensing region that senses wavelengths within a
predetermined range and a solder bump pad electrically coupled with the photo-sensing
region; and inserting the photo-sensing die inside the holding recess to couple the solder
bump pad onto the metal pattern.
The method of fabricating a semiconductor package for photo-sensing according
to certain aspects of the present invention may include one or more of the following
features. For example, the holding recess may be formed by wet etching. The wet etching
may use a dilute HF solution of a ratio of 6 : 1 or lower or may use BHF. Also, the holding recess may have a bottom surface and an inclined surface extending from the bottom
surface, while the holding recess may be formed by etching a portion of the substrate by
dry etching and adjusting the inclination of the inclined surface using wet etching.
In addition, the substrate may be formed as a plurality of unit substrates, and the
method may further include cutting the substrate after the photo-sensing die is mounted
inside the holding recess.
[Advantageous Effects]
The present invention can provide a semiconductor package for photo-sensing
and a fabricating method therefor, which allow a reduced volume.
The present invention can also provide a semiconductor package for
photo-sensing and a fabricating method therefor, with which the size of the solder bumps
mounted on the substrate can be reduced to allow a simple process.
[Description of Drawings]
Fig. 1 is a schematic cross-sectional view of a CLCC package according to prior
art for a photo-sensing semiconductor package.
Fig. 2 is a cross-sectional view of an uncut substrate in prior art for a
photo-sensing semiconductor package.
Fig. 3 is a cross-sectional view of an uncut semiconductor wafer in prior art for a photo-sensing semiconductor package.
Fig. 4 is a cross-sectional view illustrating cut semiconductor dice mounted by a
flip-chip method on an uncut substrate in prior art for a photo-sensing semiconductor
package.
Fig. 5 is a cross-sectional view illustrating a holding recess formed in a substrate
in a method of fabricating a semiconductor package for photo-sensing according to an
embodiment of the present invention.
Fig. 6 is a cross-sectional view illustrating a metal pattern formed inside the
holding recess and on the disposing surface in a method of fabricating a semiconductor
package for photo-sensing according to an embodiment of the present invention.
Fig. 7 is a cross-sectional view illustrating solder bumps formed on the metal
pattern in a method of fabricating a semiconductor package for photo-sensing according
to an embodiment of the present invention.
Fig. 8 is a cross-sectional view illustrating a photo-sensing die mounted on the
substrate in a method of fabricating a semiconductor package for photo-sensing
according to an embodiment of the present invention.
Fig. 9 is a cross-sectional view illustrating the semiconductor package for
photo-sensing according to an embodiment of the present invention mounted on a printed
circuit board. [Best Mode]
Referring to Fig. 8, in a semiconductor package 30 for photo-sensing based on
an embodiment of the present invention, a holding recess 21 in which to insert a
photo-sensing die 17 is formed in a substrate 11 made of a material that is on the whole
transparent with respect to light having a wavelength within a predetermined range, and
then the photo-sensing die 17 is inserted inside the holding recess 21 and connected to
external solder bumps 15 using metal pads 13. Thus, with the semiconductor package 30
for photo-sensing based on the present embodiment, there is no need for large solder
bumps 15 since the die 17 is inserted inside the holding recess 21, whereby the widths of
the disposing surfaces 27 of the package may be reduced.
A method of fabricating a semiconductor package for photo-sensing based on an
embodiment of the present invention will be described below with reference to Fig. 5 to
Fig. 8.
Referring to Fig. 5, the substrate 11 has the form of a wafer or panel having a
sufficiently large area to form a plurality of unit substrates by a batch process. The
requirements for the material of the substrate 11 include transparency, mechanical
strength, and chemical stability. For the substrate 11, a material that is transparent with
respect to a particular wavelength or a particular range of wavelengths is selected, which
transmits such light to the photo-sensing die 17. The material for the substrate 11 may
include, for example, glass, quartz, sapphire, silicon, or other infrared-transparent materials. The selection of the substrate material depends on the wavelengths of the range
of interest, where the light of such wavelengths may include ultraviolet or visible rays, etc.
In addition, in order that the substrate may withstand the environment for the expected
life span of the final fabricated device, it requires chemical resistance and mechanical
stability for withstanding the temperatures and various processing operations during the
fabrication. A general material for the substrate 11 in a photo-sensing semiconductor
package that operates for wavelengths in the visible light range is borosilicate glass.
Borosilicate glass has the advantages of low cost as well as high availability. The
thickness of the substrate 11 is approximately 300~500 μm.
In order to increase the light transmissivity of the substrate 11 , a thin film layer
may be coated on one or both surfaces of the substrate 11. For example, anti-reflection
coating (ARC) may be performed on at least one surface of the substrate 11. One of the
purposes of this coating is to minimize the reflection loss of light over the entire spectrum
of interest.
On a predetermined position of the substrate 11 is formed a holding recess 21 , in
which the photo-sensing die 17 will be inserted by a subsequent process. The holding
recess 21 has a bottom surface 23 and inclined surfaces 25 that extend from the bottom
surface 23 in a certain inclination and extend to the disposing surfaces 27. The method of
forming the holding recess 21 may use dry etching or wet etching. For example, the
holding recess 21 may be formed by wet etching after patterning using a photo mask. The wet etching may use a dilute HF solution of 6: 1 or lower or may use BHF. BHF refers to
Buttered HF, which is a compound having the composition of 34.6%(wt)NH4F 6.8%, HF
58.6%, and H2O.
In addition, to facilitate the adjustment of the angles of the inclined surfaces 25,
the inclination of the inclined surfaces 25 may be adjusted using wet etching after etching
a portion of the substrate 11 by dry etching. The inclined surfaces 25 facilitate the forming
of the metal pattern 13.
The depth and width of the holding recess 21 vary greatly according to the size
of the photo-sensing die 17 mounted inside the holding recess 21, where it may be
preferable to minimize the depth and width of the holding recess 21 to reduce the volume
of the semiconductor package. That is, as illustrated in Fig. 8, the configuration may be
such that the height of the die 17 mounted inside the holding recess 21 approximates the
disposing surfaces 27 of the substrate 11, and both sides of the die 17 draw near to the
metal pads 13.
Referring to Fig. 6, metal pads 13 are formed on the substrate 11. That is, metal
pads 13 having conductive properties are formed on the bottom surface 23 of the holding
recess 21, the inclined surfaces 25, and the disposing surfaces 27 of the substrate 11. The
metal pads 13 allow the die 17 mounted inside the holding recess 21 to be electrically
connected to the exterior. The method for forming the metal pads 13 may include any of a
variety of methods, such as the method of plating using copper plating, the method of using a conductive metal tape, and the method of layering a copper foil and then etching
certain portions, etc.
Referring to Fig. 7, solder bumps 15 are formed on the metal pads 13 positioned
on the disposing surfaces 27. The solder bumps 15 allow the final fabricated package to
be connected with an external circuit. The method for forming the solder bumps 15 may
include the method of solder paste printing a predetermined amount of solder material,
etc. A material that may be used for the solder bumps 15 may include generally tin-based
solders, etc., such as tin-lead, high lead (a tin-lead solder in which lead has a weight
percentage of 80% or higher), and lead- free (pure tin, tin-silver, tin-copper,
tin-silver-copper) solders, etc.
Since the solder bumps 15, according to the present embodiment, does not need
to have a greater height than the die 17, their height and width may be reduced, whereby
the size of the disposing surfaces 27 may be reduced. Thus, in a package based on the
present invention, not only is the overall width of the package decreased in accordance
with the reduced size of the disposing surfaces 27, but also the height of the package is
decreased in accordance with the decreased height of the solder bumps 15. In addition, as
the size of the solder bumps 15 may be reduced, the processes may be simplified.
Referring to Fig. 8, the photo-sensing die 17 is mounted inside the holding recess
21. On one surface of the die 17 are equipped solder bump pads 19, and these solder bump
pads 19 are attached to the metal pads 13. The method of mounting the die 17 may include a reflow process, etc. The thickness of the solder bump pads 19 may be approximately
30~40μm.
The photo-sensing die 17 maybe obtained from a photo-sensing semiconductor
wafer (not shown). A photo-sensing semiconductor wafer has a plurality of dice, where
each die has an integrated circuit formed on the upper surface of the wafer, as is so in
other semiconductor wafers. Each die has a plurality of solder bonding pads. The wafer
has a patterned passivation layer on its surface, where the passivation layer is for
protecting the integrated circuit underneath. The photo-sensing die 17 is fabricated by
cutting the photo-sensing wafer, and the die 17 illustrated in Fig. 8 represents one die 17
cut from such a photo-sensing wafer. Also, the photo-sensing die 17 has a photo-sensing
region on at least one surface that senses light of a predetermined wavelength, where this
photo-sensing region is arranged to face the bottom surface 23 of the holding recess 21.
After mounting the die 17 inside the holding recess 21, a process of cutting the
substrate 11 from the photo-sensing wafer may further be included. Afterwards, each
semiconductor package is moved by a pick-and-place technique to a wrapping medium
such as a tray, tube, or reel and tape for wrapping and packaging. The thickness of the die
17 remaining after back grinding is approximately 150-250 μm.
Referring to Fig. 9, the semiconductor package 30 for photo-sensing based on
the present embodiment is mounted on a printed circuit board 29. The mounting method
may include the ball grid array (BGA) package technology, etc. The semiconductor package 30 thus mounted on the printed circuit board 29 is applicable to all forms of optic
sensors or photo-sensors fabricated by any of a variety of technologies such as CCD or
CMOS. For example, a semiconductor package such as that of the present embodiment is
applicable to any field in which image sensors are used, such as in camcorders, digital
still cameras, PC cameras, cameras equipped on mobile phones, PDA and portable
cameras, security cameras, toys, automobiles, and biometrics, etc. Also, a semiconductor
package based on the present embodiment is applicable to linear array image sensors such
as those used in facsimiles, bar code readers and scanners, and digital photocopiers, etc.
The present embodiment is also equally applicable when packaging non-image optical
sensors, such as single phase diodes or four-phase diodes used in motion detectors, light
level sensors, and positioning or tracking systems, etc.
While embodiments of the present invention have been described above, it is to
be appreciated that various changes and modifications are encompassed within the scope
of the present invention that implement the spirit of the present invention.

Claims

[CLAIMS]
[Claim 1]
A semiconductor package for photo-sensing, comprising:
a substrate made of a material substantially transparent with respect to light
having a wavelength within a predetermined range, the substrate having a holding recess
and a disposing surface formed adjoining the holding recess;
a metal pattern extending from inside the holding recess to the disposing surface;
a photo-sensing die having a photo-sensing region configured to sense light
having a wavelength within a predetermined range and a solder bump pad electrically
coupled with the photo-sensing region, the photo-sensing die inserted inside the holding
recess and arranged such that the photo-sensing region faces the inside of the holding
recess, and the solder bump pad coupled onto the metal pattern; and
a solder bump formed on the metal pattern positioned on the disposing surface
for mounting on an external circuit.
[Claim 2]
The semiconductor package of claim 1, wherein the holding recess has a bottom
surface and an inclined surface extending from the bottom surface, and
the metal pattern is formed on a portion of the bottom surface and the inclined
surface and extends to the disposing surface.
[Claim 3]
The semiconductor package of claim 1 , having a thin film coating on one or both
surfaces of the substrate for altering the light transmissivity within the predetermined
range of wavelengths.
[Claim 4]
A method of fabricating a semiconductor package for photo-sensing, the method
comprising:
(a) providing a substrate made of a material substantially transparent with
respect to light having a wavelength within a predetermined range;
(b) forming a holding recess in a predetermined position of the substrate;
(c) forming a metal pattern extending from inside the holding recess to a
disposing surface of the substrate;
(d) forming a solder bump on the metal pattern formed on the disposing surface
of the substrate for mounting on an external circuit;
(e) providing a photo-sensing die having a photo-sensing region configured to
sense wavelengths within a predetermined range and a solder bump pad electrically
coupled with the photo-sensing region; and
(f) inserting the photo-sensing die inside the holding recess to couple the solder bump pad onto the metal pattern.
[Claim 5]
The method of claim 4, wherein the holding recess is formed by wet etching.
[Claim 6]
The method of claim 5, wherein a dilute HF solution of a ratio of 6:1 or lower is
used or BHF is used for the wet etching.
[Claim 7]
The method of claim 4, wherein the holding recess has a bottom surface and an
inclined surface extending from the bottom surface, and
the holding recess is formed by etching a portion of the substrate by dry etching
and adjusting the inclination of the inclined surface using wet etching.
[Claim 8]
The method of claim 4, wherein the substrate is formed as a plurality of unit
substrates, and the substrate is cut after performing the operation (f).
PCT/KR2007/000389 2006-01-23 2007-01-23 Semiconductor package for photo-sensing and fabricating method therefore WO2007083976A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060006671A KR100694669B1 (en) 2006-01-23 2006-01-23 Semiconductor package for photo-sensing and fabricating method therefore
KR10-2006-0006671 2006-01-23

Publications (1)

Publication Number Publication Date
WO2007083976A1 true WO2007083976A1 (en) 2007-07-26

Family

ID=38103524

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Application Number Title Priority Date Filing Date
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Country Status (2)

Country Link
KR (1) KR100694669B1 (en)
WO (1) WO2007083976A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012238666A (en) * 2011-05-10 2012-12-06 Seiko Instruments Inc Optical sensor and method for manufacturing optical sensor
EP3971947A4 (en) * 2019-05-15 2022-07-13 Sony Semiconductor Solutions Corporation Semiconductor package, semiconductor package manufacturing method, and electronic device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11238828A (en) * 1998-02-20 1999-08-31 Toshiba Corp Semiconductor device of bga type package and its manufacture and packaging equipment
JP2000077563A (en) * 1998-08-31 2000-03-14 Sharp Corp Semiconductor device and its manufacture
KR20030037862A (en) * 2001-11-06 2003-05-16 주식회사 하이닉스반도체 Package of image sensor
JP2005079489A (en) * 2003-09-03 2005-03-24 Oki Electric Ind Co Ltd Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11238828A (en) * 1998-02-20 1999-08-31 Toshiba Corp Semiconductor device of bga type package and its manufacture and packaging equipment
JP2000077563A (en) * 1998-08-31 2000-03-14 Sharp Corp Semiconductor device and its manufacture
KR20030037862A (en) * 2001-11-06 2003-05-16 주식회사 하이닉스반도체 Package of image sensor
JP2005079489A (en) * 2003-09-03 2005-03-24 Oki Electric Ind Co Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012238666A (en) * 2011-05-10 2012-12-06 Seiko Instruments Inc Optical sensor and method for manufacturing optical sensor
EP3971947A4 (en) * 2019-05-15 2022-07-13 Sony Semiconductor Solutions Corporation Semiconductor package, semiconductor package manufacturing method, and electronic device

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