KR100685406B1 - 보호부재를 가진 반도체 장치 - Google Patents
보호부재를 가진 반도체 장치 Download PDFInfo
- Publication number
- KR100685406B1 KR100685406B1 KR1020040083314A KR20040083314A KR100685406B1 KR 100685406 B1 KR100685406 B1 KR 100685406B1 KR 1020040083314 A KR1020040083314 A KR 1020040083314A KR 20040083314 A KR20040083314 A KR 20040083314A KR 100685406 B1 KR100685406 B1 KR 100685406B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- type
- lead pins
- room temperature
- circuit board
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 230000001681 protective effect Effects 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 11
- 239000000047 product Substances 0.000 claims description 11
- 229920001187 thermosetting polymer Polymers 0.000 claims description 10
- 239000000654 additive Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000000565 sealant Substances 0.000 claims description 4
- 239000006227 byproduct Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 150000002923 oximes Chemical class 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 5
- 239000000806 elastomer Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- -1 siloxanes Chemical class 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (12)
- 반도체 칩을 매립하고 외부로부터 상기 반도체 칩을 보호하기 위한 몰드 본체;상기 몰드 본체로부터 소정의 방향으로 신장되고, 인쇄 회로 기판의 배선과 전기적 접속을 달성하기 위한 다수의 리드 핀들; 및상기 다수의 리드 핀들을 외부로부터 차폐하며, 접착성 실란트, 코팅제 또는 몰딩용 제품 중 어느 하나인 보호부재를 포함하며,상기 접착성 실란트는 공기중의 수분과 반응하여 상온에서 경화하는 1액형 상온경화형, 주제와 경화제가 혼합되어 경화되는 2액형 상온경화형 또는 열경화 특성을 가지는 열경화부가형인 것을 특징으로 하는 반도체 장치.
- 삭제
- 삭제
- 제1항에 있어서, 상기 1액형 상온경화형은, 부산물에 따라 초산형, 옥심형 또는 알콜형인 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 열경화부가형은 상온반응 지연제가 첨가된 1액형 열경화 부가형 또는 2액형 열경화부가형인 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 리드 핀들은 표면 실장형인 것을 특징으로 하는 반도체 장치.
- 제6항에 있어서, 상기 인쇄 회로 기판은 상기 반도체 장치가 실장되는 부분이 요부로 형성된 것을 특징으로 하는 반도체 장치.
- 제6항에 있어서, 상기 리드 핀들은 SOP형 또는 QFP형인 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 코팅제는 탄성중합체계, 레진계 또는 반도체계 코팅제인 것을 특징으로 하는 반도체 장치.
- 제9항에 있어서, 상기 리드 핀들은 표면 실장형인 것을 특징으로 하는 반도체 장치.
- 제10항에 있어서, 상기 인쇄 회로 기판은 상기 반도체 장치가 실장되는 부분이 요부로 형성된 것을 특징으로 하는 반도체 장치.
- 제10항에 있어서, 상기 리드 핀들은 SOP형 또는 QFP형인 것을 특징으로 하는 반도체 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040083314A KR100685406B1 (ko) | 2004-10-18 | 2004-10-18 | 보호부재를 가진 반도체 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040083314A KR100685406B1 (ko) | 2004-10-18 | 2004-10-18 | 보호부재를 가진 반도체 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060034159A KR20060034159A (ko) | 2006-04-21 |
KR100685406B1 true KR100685406B1 (ko) | 2007-02-22 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040083314A KR100685406B1 (ko) | 2004-10-18 | 2004-10-18 | 보호부재를 가진 반도체 장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100685406B1 (ko) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0136615B1 (ko) * | 1994-06-09 | 1998-09-15 | 김광호 | 반도체 패키지 코팅방법 |
KR20030092607A (ko) * | 2002-05-30 | 2003-12-06 | 삼성에스디아이 주식회사 | 액정 디스플레이 패키지와 그의 제조 방법 |
-
2004
- 2004-10-18 KR KR1020040083314A patent/KR100685406B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0136615B1 (ko) * | 1994-06-09 | 1998-09-15 | 김광호 | 반도체 패키지 코팅방법 |
KR20030092607A (ko) * | 2002-05-30 | 2003-12-06 | 삼성에스디아이 주식회사 | 액정 디스플레이 패키지와 그의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20060034159A (ko) | 2006-04-21 |
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