KR100678631B1 - 반도체 집적 회로 소자 및 그 제조 방법 - Google Patents

반도체 집적 회로 소자 및 그 제조 방법 Download PDF

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Publication number
KR100678631B1
KR100678631B1 KR1020050049018A KR20050049018A KR100678631B1 KR 100678631 B1 KR100678631 B1 KR 100678631B1 KR 1020050049018 A KR1020050049018 A KR 1020050049018A KR 20050049018 A KR20050049018 A KR 20050049018A KR 100678631 B1 KR100678631 B1 KR 100678631B1
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South Korea
Prior art keywords
wiring
metal pattern
gate
voltage
diffusion preventing
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Expired - Fee Related
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KR1020050049018A
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English (en)
Korean (ko)
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KR20060127688A (ko
Inventor
장동열
김현철
이수철
이태정
Original Assignee
삼성전자주식회사
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Publication date
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Priority to KR1020050049018A priority Critical patent/KR100678631B1/ko
Priority to US11/441,304 priority patent/US20060284219A1/en
Priority to JP2006156335A priority patent/JP2006344959A/ja
Publication of KR20060127688A publication Critical patent/KR20060127688A/ko
Application granted granted Critical
Publication of KR100678631B1 publication Critical patent/KR100678631B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020050049018A 2005-06-08 2005-06-08 반도체 집적 회로 소자 및 그 제조 방법 Expired - Fee Related KR100678631B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020050049018A KR100678631B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 소자 및 그 제조 방법
US11/441,304 US20060284219A1 (en) 2005-06-08 2006-05-25 Semiconductor integrated circuit device method of fabricating the same
JP2006156335A JP2006344959A (ja) 2005-06-08 2006-06-05 半導体集積回路装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050049018A KR100678631B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20060127688A KR20060127688A (ko) 2006-12-13
KR100678631B1 true KR100678631B1 (ko) 2007-02-05

Family

ID=37572546

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050049018A Expired - Fee Related KR100678631B1 (ko) 2005-06-08 2005-06-08 반도체 집적 회로 소자 및 그 제조 방법

Country Status (3)

Country Link
US (1) US20060284219A1 (https=)
JP (1) JP2006344959A (https=)
KR (1) KR100678631B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100751698B1 (ko) * 2006-07-12 2007-08-23 동부일렉트로닉스 주식회사 반도체 소자의 금속 배선 구조물 및 이의 제조 방법
KR100796506B1 (ko) * 2006-12-29 2008-01-21 동부일렉트로닉스 주식회사 저유전율 층간 절연막의 형성 방법 및 그 구조
US8785997B2 (en) 2012-05-16 2014-07-22 Infineon Technologies Ag Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222633A (ja) * 1995-02-17 1996-08-30 Yamaha Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162262A (en) * 1989-03-14 1992-11-10 Mitsubishi Denki Kabushiki Kaisha Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
JPH0955425A (ja) * 1995-08-10 1997-02-25 Mitsubishi Electric Corp 多層Ａｌ配線構造を有する半導体装置およびその製造方法
US6242299B1 (en) * 1999-04-01 2001-06-05 Ramtron International Corporation Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode
JP2002064190A (ja) * 2000-08-18 2002-02-28 Mitsubishi Electric Corp 半導体装置
US6475857B1 (en) * 2001-06-21 2002-11-05 Samsung Electronics Co., Ltd. Method of making a scalable two transistor memory device
US6706594B2 (en) * 2001-07-13 2004-03-16 Micron Technology, Inc. Optimized flash memory cell
KR100457843B1 (ko) * 2002-09-18 2004-11-18 삼성전자주식회사 반도체 장치에서 콘택 형성 방법
JP4799148B2 (ja) * 2005-11-28 2011-10-26 株式会社東芝 不揮発性半導体記憶装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222633A (ja) * 1995-02-17 1996-08-30 Yamaha Corp 半導体装置

Also Published As

Publication number Publication date
KR20060127688A (ko) 2006-12-13
US20060284219A1 (en) 2006-12-21
JP2006344959A (ja) 2006-12-21

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