KR100676607B1 - Method for forming photoresist pattern of semiconductor device - Google Patents

Method for forming photoresist pattern of semiconductor device Download PDF

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KR100676607B1
KR100676607B1 KR1020050134463A KR20050134463A KR100676607B1 KR 100676607 B1 KR100676607 B1 KR 100676607B1 KR 1020050134463 A KR1020050134463 A KR 1020050134463A KR 20050134463 A KR20050134463 A KR 20050134463A KR 100676607 B1 KR100676607 B1 KR 100676607B1
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photoresist
pattern
layer
semiconductor device
forming
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KR1020050134463A
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Korean (ko)
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강재현
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동부일렉트로닉스 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A method for forming a photoresist pattern of a semiconductor device is provided to minimize a photoresist effect by forming the photoresist pattern with a positive resist solution or a negative resist solution. A photoresist layer is formed on a substrate(10) by changing kinds of photoresist layers according to density of a semiconductor device. An exposure process for the photoresist layer is performed. A photoresist pattern(21) is formed by developing the exposed photoresist layer. A gate layer and a metal layer having low density is formed by using a positive resist solution. An active region and a contact layer having high density is formed by using a negative resist solution.

Description

반도체 소자의 감광막 패턴 형성 방법{Method for Forming Photoresist Pattern of Semiconductor Device}[0001] The present invention relates to a method for forming a photoresist pattern of a semiconductor device,

도 1a에서 도 1d는 음성 감광액 및 양성 감광액을 사용하여 형성한 감광막 패턴에서의 테두리 감광 효과를 나타내는 그림들이다.1 (a) to 1 (d) are diagrams showing edge photomicrographs in a photoresist pattern formed using a negative photoresist and a positive photoresist.

도 2a에서 도 2c는 본 발명의 제1실시예에 따른 반도체 소자의 감광막 패턴 형성 방법을 순차적으로 나타낸 단면도들이다.2A to 2C are cross-sectional views sequentially illustrating a method of forming a photoresist pattern of a semiconductor device according to a first embodiment of the present invention.

<도면의 주요 부호에 대한 설명>DESCRIPTION OF THE RELATED ART [0002]

5: 크리어 10: 기판5: CLEAR 10: Substrate

20: 감광막 20a: 감광막 패턴20: photosensitive film 20a: photosensitive film pattern

30: 마스크 35: 빛30: Mask 35: Light

본 발명은 반도체 소자의 제조 기술에 관한 것으로서, 더욱 구체적으로는 반도체 소자의 밀도에 따라서 감광액(Resist)의 종류를 달리하여 감광막 패턴을 형성하여 테두리 감광(Fogging) 효과를 최소화함으로써, 패턴별 핵심치수의 균일도를 높일 수 있는 반도체 소자의 감광막 패턴 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device manufacturing technology, and more particularly, to a semiconductor device manufacturing method in which a photoresist pattern is formed by varying the type of a resist material according to density of semiconductor devices to minimize a fogging effect, To a method of forming a photoresist pattern of a semiconductor device.

반도체 소자의 제조 기술에서, 사진 공정은 반도체 소자의 고집적도를 선도하는 기본 기술로서, 빛을 이용하여 반도체 기판 위에 반도체 소자의 형성에 필요한 감광막 패턴을 형성하는 것이다.BACKGROUND ART [0002] In the technology of manufacturing semiconductor devices, photolithography is a basic technique leading to high integration of semiconductor devices, and forms a photoresist pattern necessary for forming semiconductor devices on a semiconductor substrate using light.

높은 해상도(resolution)의 사진 공정은 연구 분야나 산업분야에서 중요한 기술이며 반도체 소자의 높은 달성 성과와 응용을 가능하게 해 준다. 일반적으로, 마스크(MASK)는 E-beam으로 제작한다. E-beam은 전자(Electron)를 이용하여 패턴을 형성하는데, 전자는 탄성 산란(elastic scattering) 특성으로 인해서 에너지를 잃기 전까지 먼 거리를 비행하게 되면서 실제 패턴에는 노광 량이 적게 된다. 이러한 이유로 테두리 감광(Fogging) 효과가 유발된다.High-resolution photolithography is an important technology in the research and industrial sectors, enabling high performance and application of semiconductor devices. Generally, the mask (MASK) is made of E-beam. The E-beam forms a pattern using an electron. The electron travels a long distance before the energy is lost due to the elastic scattering characteristic, and the exposure amount in the actual pattern becomes small. For this reason, a border fogging effect is induced.

E-beam으로 마스크를 제작할 때 어떠한 종류의 감광액을 사용하는가에 따라 테두리 감광(Fogging) 효과가 달라진다. 도 1a에 도시된 바와 같이, 크리어(Clear, 5) 부분은 음성 감광액(negative resist)를 사용하면 전자가 들어오지 못하고, 크리어(5) 주변의 하얀색 부분을 통해 모두 들어오게 된다. 또한, 양성 감광액(positive resist)를 사용하게 되면 크리어(5) 영역만 전자가 통과하게 된다. 이렇게 감광액의 종류에 따라서 주요 패턴(main pattern)에 영향을 주는 전자의 양이 달라진다. When making a mask with an E-beam, the fogging effect varies depending on the type of sensitizing solution used. As shown in FIG. 1A, when a negative resist is used for a clear (5) portion, electrons do not enter, and all come in through a white portion around the clear 5. In addition, when a positive photoresist is used, electrons pass through only the region of the cleared region 5. Thus, the amount of electrons that affect the main pattern varies depending on the type of the sensitizing solution.

도 1b와 같은 패턴의 경우, 음성 감광액을 사용하면, 도 1c와 같이, 핵심치수(CD)의 균일도가 나빠지는 것을 볼 수 있다. 또한, 양성 감광액을 사용하면, 도 1d와 같이, 핵심 치수 균일도가 좋아지는 것을 확인할 수 있다.In the case of the pattern shown in FIG. 1B, it can be seen that the uniformity of the core dimension (CD) is deteriorated as shown in FIG. 1C when the negative sensitizing solution is used. In addition, when positive photoresist is used, it can be confirmed that the core dimension uniformity is improved as shown in FIG. 1D.

본 발명은 반도체 소자의 밀도에 따라서 감광액의 종류를 달리하여 포토감광액 패턴을 형성하여 테두리 감광 효과를 최소화함으로써, 패턴별 핵심치수의 균일도를 높일 수 있는 반도체 소자의 감광막 패턴 형성 방법을 제시하는 것이다. The present invention proposes a method of forming a photoresist pattern of a semiconductor device capable of increasing the uniformity of the core dimensions of each pattern by forming a photoresist pattern by varying the type of the photoresist depending on the density of the semiconductor device to minimize edge sensitization.

본 발명에 따른 반도체 소자의 감광막 패턴 형성 방법은 기판 위에 반도체 소자의 밀도에 따라서 감광막의 종류를 달리하여 감광막을 도포하는 단계와, 감광막을 노광하는 단계와, 노광된 감광막을 현상하여 감광막 패턴을 형성하는 단계를 포함한다. 여기서, 감광막 도포는 밀도가 낮은 게이트 층 및 금속 층을 형성할 때에는 양성 감광액으로 하고, 패턴의 밀도가 높은 활성영역 및 컨택 층을 형성할 때에는 음성 감광액으로 하는 것이 바람직하다.The method for forming a photoresist pattern of a semiconductor device according to the present invention includes the steps of applying a photoresist film on a substrate with different types of photoresist films according to the density of semiconductor devices, exposing the photoresist film, developing the exposed photoresist film to form a photoresist pattern . Here, the photoresist layer is preferably applied as a positive photoresist layer when forming the gate layer and the metal layer having a low density, and the negative photoresist layer when forming the active region and the contact layer having a high pattern density.

실시예Example

이하, 첨부 도면을 참조하여 본 발명의 실시예를 설명한다.Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

이하의 설명에서는 본 발명이 속하는 기술 분야에 익히 알려져 있고 본 발명과 직접적으로 관련이 없는 기술 내용에 대해서는 설명을 생략한다. 이는 불필요한 설명을 생략함으로써 본 발명의 요지를 흐리지 않고 좀 더 명확히 전달하기 위함이다. 마찬가지의 이유로 첨부 도면에서 일부 구성요소는 다소 과장되거나 생략되거나 또는 개략적으로 도시되었으며, 각 구성요소의 크기는 실제 크기를 그대로 반영하는 것이 아니다.In the following description, descriptions of techniques which are well known in the art to which the present invention belongs and which are not directly related to the present invention are not described. This is to omit unnecessary explanations so as to convey more clearly the gist of the present invention. For the same reason, some of the elements in the accompanying drawings are somewhat exaggerated, omitted or schematically shown, and the sizes of the respective elements do not directly reflect the actual sizes.

도 2a 내지 도 2c는 본 발명의 실시예에 따른 반도체 소자의 감광막 패턴 형성 방법을 설명하기 위한 단면도들이다.2A to 2C are cross-sectional views illustrating a method of forming a photoresist pattern of a semiconductor device according to an embodiment of the present invention.

도 2a를 참조하면, 먼저 기판(10) 위에 감광막의 접착력을 증가시키기 위해 HMDS(Hexa Methyl Di Silazane, 도시되지 않음)를 분사한다. 이후, 감광액(20)을 분사한 후, 기판(10)을 높은 회전수로 회전시켜 감광액(20)를 균일한 얇은 막의 형태로 기판(10) 전체에 도포시킨다. 이후, 기판(10)을 가열하는 소프트 베이킹 공정을 한다. 이때, 감광막(20)는 가열에 의해 솔벤트(solvent)가 증발되면서 건조되고, 접착도가 향상된다. Referring to FIG. 2A, HMDS (Hexamethyl Di Silane) (not shown) is sprayed on the substrate 10 to increase the adhesion of the photoresist. Thereafter, after the photosensitive liquid 20 is sprayed, the substrate 10 is rotated at a high rotation speed to apply the photosensitive liquid 20 to the entire substrate 10 in the form of a uniform thin film. Thereafter, a soft baking process for heating the substrate 10 is performed. At this time, the photosensitive film 20 is dried by evaporation of the solvent by heating, and the adhesion is improved.

여기서, 감광막(20)은 패턴의 밀도가 낮은 게이트 층(Gate layer) 및 금속 층(Metal layer)을 형성할 때에는 양성 감광액를 사용하여 형성한다. 또한, 패턴의 밀도가 높은 활성영역(Active layer) 및 컨택 층(Contact layer)를 형성할 때에는 음성 감광액를 사용하여 형성한다. Here, the photoresist layer 20 is formed using a positive photoresist when forming a gate layer and a metal layer having a low pattern density. In addition, when forming the active layer and the contact layer having a high pattern density, a negative photosensitive liquid is used.

다음으로, 노광 장비(Stepper)를 사용하여, 도 2b와 같이, 마스크(30)를 매개로 하여 빛(35)을 감광막(20)이 도포된 기판(10)의 전면에 조사한다. Next, as shown in FIG. 2B, the light 35 is irradiated to the entire surface of the substrate 10 coated with the photoresist film 20 through the mask 30 by using an exposure apparatus (Stepper).

이후, 노광 후 베이킹 공정을 한다. 이때, 감광막(20)의 노광된 부분과 노광되지 않은 부분의 경계에서 발생될 수 있는 웨이브성 프로파일이 개선된다.Thereafter, a post-exposure baking step is performed. At this time, the wave-wise profile that can be generated at the boundary between the exposed portion and the unexposed portion of the photoresist film 20 is improved.

다음으로, 현상 공정을 진행하여, 도 2c와 같이, 감광막 패턴(21)을 형성한다. 현상액은 TMAH(Tetramethyl Ammonium Hydroxide)를 사용한다. 현상액은 노광 과정을 통해 상대적으로 결합이 약해져 있는 부분의 감광막(20)를 녹여서 제거한다. Next, the development process is performed to form the photoresist pattern 21 as shown in Fig. 2C. TMAH (Tetramethyl Ammonium Hydroxide) is used as the developing solution. The developing solution dissolves and removes the photosensitive film 20 in a portion where the bonding is relatively weak through the exposure process.

이때, 감광막 패턴(21)은 패턴의 밀도가 적은 게이트 층 및 금속 층을 형성할 때에는 양성 감광액을 사용하고, 패턴의 밀도가 높은 활성영역 및 컨택 층를 형 성할 때에는 음성 감광액을 사용하여 형성하였기 때문에 테두리 감광(Fogging) 효과를 최소화된다. 이에 따라, 패턴별 핵심치수의 균일도가 높아진다. 이후, 하드 베이킹 공정을 한다. 이때, 감광막 패턴(21)이 건조되면서 더욱 단단히 경화되고, 기판(10)에 대한 접착도가 증가시킨다. Since the photoresist pattern 21 is formed using a positive photoresist when forming a gate layer and a metal layer having a small pattern density and using a negative photoresist when forming an active region and a contact layer having high density of patterns, The fogging effect is minimized. As a result, the uniformity of the core dimensions per pattern increases. Thereafter, a hard baking process is performed. At this time, the photosensitive film pattern 21 is dried and hardened more firmly, and the degree of adhesion to the substrate 10 is increased.

여기서, 반도체 소자의 밀도에 따라서 감광액의 종류를 달리하여 감광막 패턴을 형성하였기 때문에 테두리 감광 효과를 최소화할 수 있다.Here, since the photoresist pattern is formed by varying the type of the photoresist depending on the density of the semiconductor device, the edge photoresponse effect can be minimized.

본 발명에 따른 반도체 소자의 감광막 패턴 형성 방법은 반도체 소자의 밀도에 따라서 음성 감광액 또는 양성 감광액을 사용하여 감광막 패턴을 형성하였기 때문에 테두리 감광 효과를 최소화할 수 있다.In the method of forming a photoresist pattern of a semiconductor device according to the present invention, a photoresist pattern is formed using a negative photoresist or a positive photoresist depending on the density of a semiconductor device, thereby minimizing the edge photoresist effect.

또한, 본 발명에 따르면, 밀도에 따라 감광액을 달리하여 테두리 감광 효과를 최소화하였기 때문에 패턴별 핵심치수의 균일도를 높일 수 있다.In addition, according to the present invention, since the edge sensitizing effect is minimized by varying the sensitizing solution depending on the density, the uniformity of the core dimensions of each pattern can be increased.

발명의 바람직한 실시예에 대해 개시하였으며, 비록 특정 용어들이 사용되었으나 이는 단지 본 발명의 기술 내용을 쉽게 설명하고 발명의 이해를 돕기 위한 일반적인 의미에서 사용된 것이지, 본 발명의 범위를 한정하고자 하는 것이 아니다. 여기에 개시된 실시예 외에도 본 발명의 기술적 사상에 바탕을 둔 다른 변형예들이 실시 가능하다는 것은 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에게 자명한 것이다.Although preferred embodiments of the invention have been disclosed and specific terms are employed, they are used in a generic sense only and are not intended to limit the scope of the present invention. . It is to be understood by those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

Claims (2)

기판 위에 반도체 소자의 밀도에 따라서 감광막의 종류를 달리하여 감광막을 도포하는 단계와,Applying a photoresist film on the substrate with different types of photoresist depending on the density of semiconductor elements, 상기 감광막을 노광하는 단계와,Exposing the photoresist film; 상기 노광된 감광막을 현상하여 감광막 패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성 방법.And developing the exposed photoresist layer to form a photoresist pattern. 제1항에서,The method of claim 1, 상기 감광막 도포는 밀도가 낮은 게이트 층 및 금속 층을 형성할 때에는 양성 감광액으로 하고, 패턴의 밀도가 높은 활성영역 및 컨택 층을 형성할 때에는 음성 감광액으로 하는 것을 특징으로 하는 반도체 소자의 감광막 패턴 형성 방법.Wherein the photoresist film is formed as a positive photoresist when forming the gate layer and the metal layer having a low density and the negative photoresist when forming the active region and the contact layer having high density of the pattern. .
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970022533A (en) * 1995-10-04 1997-05-30 김주용 Process defect inspection method of semiconductor device
KR19980028362A (en) * 1996-10-22 1998-07-15 김영환 Manufacturing method of fine pattern of semiconductor device
KR20010011143A (en) * 1999-07-26 2001-02-15 김영환 Forming method for fine pattern of semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970022533A (en) * 1995-10-04 1997-05-30 김주용 Process defect inspection method of semiconductor device
KR19980028362A (en) * 1996-10-22 1998-07-15 김영환 Manufacturing method of fine pattern of semiconductor device
KR20010011143A (en) * 1999-07-26 2001-02-15 김영환 Forming method for fine pattern of semiconductor device

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