CN115639730A - Electron beam lithography method, shallow trench isolation method and electrode contact hole forming method - Google Patents
Electron beam lithography method, shallow trench isolation method and electrode contact hole forming method Download PDFInfo
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- CN115639730A CN115639730A CN202211066906.4A CN202211066906A CN115639730A CN 115639730 A CN115639730 A CN 115639730A CN 202211066906 A CN202211066906 A CN 202211066906A CN 115639730 A CN115639730 A CN 115639730A
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- electron beam
- substrate
- beam lithography
- glue
- aluminum film
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000000609 electron-beam lithography Methods 0.000 title claims abstract description 20
- 238000002955 isolation Methods 0.000 title claims abstract description 12
- 238000010894 electron beam technology Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000003292 glue Substances 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- 239000012212 insulator Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 238000009825 accumulation Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
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Abstract
The invention relates to an electron beam lithography method, shallow trench isolation and an electrode contact hole forming method. The electron beam lithography method comprises the following steps: coating electron beam glue on a substrate; forming an aluminum film on the electron beam glue; carrying out electron beam exposure on the electron beam glue; and finally, developing. The shallow trench isolation and the electrode contact hole are formed by the method. The invention solves the problem of poor exposure effect caused by accumulation of electrons on the surface of the substrate.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing processes, in particular to an electron beam lithography method and a method for forming shallow trench isolation and electrode contact holes.
Background
Electron Beam Lithography (EBL) is a practice of scanning a focused beam of electrons to draw custom shapes on a surface covered by an electron sensitive film (also called e-beam glue) called resist (exposure). The electron beam changes the solubility of the e-beam glue, and either the exposed or the unexposed areas of the resist can be selectively removed by immersing it in a solvent (development). In the electron beam exposure process, electrons of the electron beam glue 2 hitting on the substrate 1 need to be led out in time, if the substrate 1 is a non-conductive substrate, the electrons are accumulated on the surface of the substrate (the accumulated electrons are shown in fig. 1), a potential is formed, and the subsequent electrons are prevented from being injected to influence the electron beam exposure effect.
The invention is therefore set forth.
Disclosure of Invention
The invention mainly aims to provide an electron beam lithography method and application thereof in shallow trench isolation and electrode contact hole formation, and solves the problem of poor exposure effect caused by accumulation of electrons on the surface of a substrate.
In order to achieve the above object, the present invention provides the following technical solutions.
A first aspect of the present invention provides an electron beam lithography method comprising the steps of:
coating electron beam glue on a substrate;
forming an aluminum film on the electron beam glue;
carrying out electron beam exposure on the electron beam glue;
and finally developing.
Further, the thickness of the aluminum film reaches
Further, the thickness of the aluminum film reaches
Further, the aluminum film is formed by a sputtering method at 20 to 35 ℃.
Further, the development was performed using TMAH.
Further, the substrate is a silicon substrate, a silicon carbide substrate, a silicon-on-insulator substrate, a germanium substrate, or a germanium-on-insulator substrate.
Further, the ratio of the thickness of the electron beam glue to the thickness of the aluminum film is 3.
Further, before forming the aluminum film, the method further comprises: and firstly forming a hard mask layer on the electron beam glue.
A second aspect of the present invention provides a method for forming shallow trench isolation, which uses the above-mentioned electron beam lithography method to form shallow trench isolation on a semiconductor carrier.
A third aspect of the present invention provides a method of forming an electrode contact hole, which uses the electron beam lithography method described above to form the electrode contact hole.
Compared with the prior art, the invention achieves the following technical effects:
(1) A layer of thin aluminum film is deposited on the surface of the electron beam glue, so that the electron beam glue can be prevented from changing in property in the sputtering process, a conductive effect is achieved, most electrons can penetrate through the aluminum film to reach the electron beam glue in the exposure process, and the electron beam glue is photosensitive; meanwhile, aluminum can be developed together with the electron beam glue in the developing process, and the subsequent removing process is omitted.
(2) The aluminum film is formed by sputtering at normal temperature, and the thickness is controlled to a certain extent, so that the effect of focusing the electron beam on the electron beam glue can be further improved, and the exposure effect is improved.
(3) Before forming the electron beam glue, a hard mask layer can be formed and can be used for multiple photoetching and other processes.
(4) The electron beam lithography method can be used for forming any pattern in semiconductor manufacturing such as shallow trench isolation or electrode contact holes.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention.
FIG. 1 is a schematic illustration of electron accumulation during electron beam exposure of the prior art;
FIG. 2 is a flow chart of an electron beam lithography method according to the present invention;
reference numerals are as follows:
1-substrate, 2-electron beam glue.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that these descriptions are illustrative only and are not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and some details may be omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The electron is a wave with extremely short wavelength, the exposure precision of the electron beam can reach the nanometer level, but the application on the non-conductive substrate has the problem that the exposure effect is poor due to the accumulation of the electron on the surface.
The present inventors have found that the above problems can be solved by forming a thin aluminum film on the surface of the electron beam resist prior to exposure.
Specifically, as shown in the flow of fig. 2, an electron beam resist is first coated on a substrate to be patterned. The electron beam resist can adopt positive electron beam resist or negative electron beam resist, and can adopt polymethyl methacrylate, poly alpha-trifluoroethyl chloroacrylate, polybutane sulfone, polyhydrosilsesquioxane and other materials. The substrate of the present invention is not limited to a wafer, and may be a semiconductor carrier on which an optoelectronic structure is not formed, such as a silicon substrate, a silicon carbide substrate, a silicon-on-insulator substrate, a germanium-on-insulator substrate, a silicon germanium substrate, or the like, or a carrier on which an optoelectronic structure is formed on the above substrate.
An aluminum film is then formed on the electron beam resist. The aluminum film can prevent the electron beam glue from changing in property in the sputtering process, plays a role in conducting, and can also enable most electrons to penetrate through the aluminum film to reach the electron beam glue in the exposure process so as to enable the electron beam glue to be photosensitive. By controlling the formation condition and thickness of the aluminum film, the exposure effect can be improved to a greater extent, and the accumulation of electrons on the surface of the substrate can be reduced or eliminated.
In some embodiments, the aluminum film is preferably formed by normal temperature sputtering, and the thickness is controlled at
Left and right, e.g.
Any thickness within the range of any one of,
etc., more preferably
The normal temperature here means 20 to 35 ℃.
In some embodiments, the ratio of the thickness of the e-beam paste to the thickness of the aluminum film is 3.
And then, electron beam exposure can be carried out on the electron beam glue, the electron beam can pass through the aluminum film to reach the electron beam glue, and electrons cannot be accumulated on the surface due to the conductive action of the aluminum film, so that the electron beam glue is better exposed. The exposure path or pattern of the electron beam in this step depends on the pattern to be etched, and the method of the present invention can be used for forming shallow trench isolation, forming electrode contact holes, dividing gate stack layers, etc.
And finally, developing, wherein the developing solution preferably adopts TMAH developing solution, and has good solubility for the aluminum film and the exposed or unexposed electron beam glue, so that the aluminum film and the exposed or unexposed electron beam glue can be removed together, and the subsequent removing step is omitted.
In the above-described photolithography method, a hard mask layer may be formed on the e-beam resist before forming the aluminum film. The hard mask layer is mainly used in multiple photoetching process, firstly multiple photoresist images are transferred onto the hard mask, and then the final pattern is etched and transferred onto the substrate through the hard mask, and TiN, siN, siO can be adopted 2 And the like.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the disclosure, and these alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (9)
1. An electron beam lithography method, comprising the steps of:
coating electron beam glue on a substrate;
forming an aluminum film on the electron beam glue;
carrying out electron beam exposure on the electron beam glue;
and finally, developing.
2. Method according to claim 1, characterized in that the thickness of the aluminium film is such as to achieve
3. The electron beam lithography method according to claim 2, wherein said aluminum film has a thickness up to
4. The electron beam lithography method according to any one of claims 1 to 3, wherein said aluminum film is formed by a sputtering method at 20 to 35 ℃.
5. The method according to claim 1, wherein the developing is performed using TMAH.
6. The electron beam lithography method according to claim 1, wherein the substrate is a silicon substrate, a silicon carbide substrate, a silicon-on-insulator substrate, a germanium substrate, or a germanium-on-insulator substrate.
7. The electron beam lithography method according to claim 1, further comprising, before forming said aluminum film: and firstly forming a hard mask layer on the electron beam glue.
8. A method for forming shallow trench isolation, characterized in that the method of electron beam lithography according to any one of claims 1 to 7 is used to form shallow trench isolation on a semiconductor carrier.
9. A method for forming an electrode contact hole, characterized in that the electrode contact hole is formed by the electron beam lithography method according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211066906.4A CN115639730A (en) | 2022-09-01 | 2022-09-01 | Electron beam lithography method, shallow trench isolation method and electrode contact hole forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211066906.4A CN115639730A (en) | 2022-09-01 | 2022-09-01 | Electron beam lithography method, shallow trench isolation method and electrode contact hole forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115639730A true CN115639730A (en) | 2023-01-24 |
Family
ID=84940310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211066906.4A Pending CN115639730A (en) | 2022-09-01 | 2022-09-01 | Electron beam lithography method, shallow trench isolation method and electrode contact hole forming method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115639730A (en) |
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2022
- 2022-09-01 CN CN202211066906.4A patent/CN115639730A/en active Pending
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