CN115639730A - Electron beam lithography method, shallow trench isolation and method for forming electrode contact holes - Google Patents

Electron beam lithography method, shallow trench isolation and method for forming electrode contact holes Download PDF

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CN115639730A
CN115639730A CN202211066906.4A CN202211066906A CN115639730A CN 115639730 A CN115639730 A CN 115639730A CN 202211066906 A CN202211066906 A CN 202211066906A CN 115639730 A CN115639730 A CN 115639730A
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electron beam
substrate
beam lithography
lithography method
aluminum film
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贺晓彬
李亭亭
杨涛
唐波
刘金彪
李俊峰
罗军
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Institute of Microelectronics of CAS
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Abstract

本发明涉及一种电子束光刻方法、浅沟槽隔离及电极接触孔的形成方法。电子束光刻方法包括下列步骤:在衬底上涂覆电子束胶;在所述电子束胶上形成铝膜;对所述电子束胶进行电子束曝光;最后显影。利用上述方法形成浅沟槽隔离及电极接触孔。本发明解决了电子在衬底表面累积导致曝光效果差的问题。

Figure 202211066906

The invention relates to an electron beam photolithography method, a shallow trench isolation and a method for forming an electrode contact hole. The electron beam photolithography method comprises the following steps: coating electron beam glue on a substrate; forming an aluminum film on the electron beam glue; exposing the electron beam glue to electron beam; finally developing. The shallow trench isolation and electrode contact holes are formed by using the above method. The invention solves the problem of poor exposure effect caused by electron accumulation on the substrate surface.

Figure 202211066906

Description

电子束光刻方法、浅沟槽隔离及电极接触孔的形成方法Electron beam lithography method, shallow trench isolation and method for forming electrode contact holes

技术领域technical field

本发明涉及半导体制作工艺领域,特别一种电子束光刻方法、浅沟槽隔离及电极接触孔的形成方法。The invention relates to the field of semiconductor manufacturing technology, in particular to an electron beam lithography method, a shallow trench isolation and a method for forming an electrode contact hole.

背景技术Background technique

电子束光刻(EBL)是一种扫描电子聚焦束以在被称为抗蚀剂(曝光)的电子敏感膜(也称为电子束胶)覆盖的表面上绘制自定义形状的实践。电子束改变了电子束胶的溶解性,通过将其浸入溶剂中(显影),可以选择性地除去抗蚀剂的已曝光或未曝光区域。在电子束曝光过程中,打在衬底1上电子束胶2的电子需要及时导出,如果衬底1为非导电衬底,就会导致电子在衬底表面累积(累积的电子如图1所示),形成电势,最终会阻止后续电子射入,影响电子束曝光效果。Electron beam lithography (EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered by an electron-sensitive film called resist (exposure), also known as e-beam glue. The e-beam changes the solubility of the e-beam glue, and by immersing it in a solvent (developing), it is possible to selectively remove exposed or unexposed areas of the resist. During the electron beam exposure process, the electrons that hit the electron beam glue 2 on the substrate 1 need to be exported in time. If the substrate 1 is a non-conductive substrate, it will cause electrons to accumulate on the substrate surface (the accumulated electrons are shown in Figure 1 Shown), forming a potential, which will eventually prevent subsequent electron injection and affect the effect of electron beam exposure.

为此,提出本发明。For this reason, the present invention is proposed.

发明内容Contents of the invention

本发明的主要目的在于提供一种电子束光刻方法及其在浅沟槽隔离及电极接触孔形成中的应用,解决了电子在衬底表面累积导致曝光效果差的问题。The main purpose of the present invention is to provide an electron beam lithography method and its application in shallow trench isolation and electrode contact hole formation, which solves the problem of poor exposure effect caused by the accumulation of electrons on the substrate surface.

为了实现以上目的,本发明提供了以下技术方案。In order to achieve the above objectives, the present invention provides the following technical solutions.

本发明的第一方面提供了一种电子束光刻方法,其包括下列步骤:A first aspect of the present invention provides an electron beam lithography method comprising the steps of:

在衬底上涂覆电子束胶;Coating electron beam glue on the substrate;

在所述电子束胶上形成铝膜;forming an aluminum film on the electron beam glue;

对所述电子束胶进行电子束曝光;Carrying out electron beam exposure to the electron beam glue;

最后显影。Develop last.

进一步地,所述铝膜的厚度达到

Figure BDA0003828725930000011
Further, the thickness of the aluminum film reaches
Figure BDA0003828725930000011

进一步地,所述铝膜的厚度达到

Figure BDA0003828725930000012
Further, the thickness of the aluminum film reaches
Figure BDA0003828725930000012

进一步地,在20~35℃下采用溅射法形成所述铝膜。Further, the aluminum film is formed by sputtering at 20-35°C.

进一步地,使用TMAH进行所述显影。Further, TMAH is used for the development.

进一步地,所述衬底为硅衬底、碳化硅衬底、绝缘体上硅衬底、锗衬底或绝缘体上锗衬底。Further, the substrate is a silicon substrate, a silicon carbide substrate, a silicon-on-insulator substrate, a germanium substrate or a germanium-on-insulator substrate.

进一步地,所述电子束胶的厚度与所述铝膜的厚度比例为3:1。Further, the ratio of the thickness of the electron beam glue to the thickness of the aluminum film is 3:1.

进一步地,在形成所述铝膜之前还包括:先在所述电子束胶上形成硬掩膜层。Further, before forming the aluminum film, the method further includes: firstly forming a hard mask layer on the electron beam glue.

本发明的第二方面提供了一种浅沟槽隔离的形成方法,其采用上文所述的电子束光刻方法在半导体载体上形成浅沟槽隔离。The second aspect of the present invention provides a method for forming shallow trench isolation, which uses the above-mentioned electron beam lithography method to form shallow trench isolation on a semiconductor carrier.

本发明的第三方面提供了一种电极接触孔的形成方法,其采用上文所述的电子束光刻方法形成所述电极接触孔。A third aspect of the present invention provides a method for forming an electrode contact hole, which uses the above-mentioned electron beam lithography method to form the electrode contact hole.

与现有技术相比,本发明达到了以下技术效果:Compared with the prior art, the present invention has achieved the following technical effects:

(1)在电子束胶表面沉积一层很薄的铝膜,可以防止溅射过程中导致电子束胶性质改变,起到导电作用,也可以让大部分电子在曝光过程中穿过铝膜抵达电子束胶,使电子束胶感光;同时铝在显影过程中可以连同电子束胶一起被显影液,省去后续的去除过程。(1) Deposit a thin layer of aluminum film on the surface of the electron beam glue, which can prevent the properties of the electron beam glue from changing during the sputtering process, play a conductive role, and also allow most of the electrons to pass through the aluminum film during the exposure process. Electron beam glue, which makes the electron beam glue photosensitive; at the same time, aluminum can be absorbed by the developing solution together with the electron beam glue during the development process, eliminating the subsequent removal process.

(2)铝膜采用常温溅射而成,并且控制一定的厚度,可以进一步提高将电子束聚焦于电子束胶的效果,提高曝光效果。(2) The aluminum film is sputtered at room temperature, and the thickness is controlled to a certain extent, which can further improve the effect of focusing the electron beam on the electron beam glue and improve the exposure effect.

(3)在形成电子束胶之前还可以形成一层硬掩膜层,可用于多重光刻等工艺。(3) A hard mask layer can also be formed before the electron beam glue is formed, which can be used in processes such as multiple photolithography.

(4)本发明的电子束光刻方法可以用于形成浅沟槽隔离或电极接触孔等半导体制作中任意图案的形成。(4) The electron beam lithography method of the present invention can be used to form arbitrary patterns in semiconductor fabrication such as shallow trench isolation or electrode contact holes.

附图说明Description of drawings

通过阅读下文优选实施方式的详细描述,各种其他的优点和益处对于本领域普通技术人员将变得清楚明了。附图仅用于示出优选实施方式的目的,而并不认为是对本发明的限制。Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiment. The drawings are only for the purpose of illustrating a preferred embodiment and are not to be considered as limiting the invention.

图1为现有技术电子束曝光时电子累积的示意图;1 is a schematic diagram of electron accumulation during electron beam exposure in the prior art;

图2为本发明提供的电子束光刻方法的流程图;Fig. 2 is the flowchart of electron beam lithography method provided by the present invention;

附图标记:Reference signs:

1-衬底,2-电子束胶。1-substrate, 2-electron beam glue.

具体实施方式Detailed ways

以下,将参照附图来描述本公开的实施例。但是应该理解,这些描述只是示例性的,而并非要限制本公开的范围。此外,在以下说明中,省略了对公知结构和技术的描述,以避免不必要地混淆本公开的概念。Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

在附图中示出了根据本公开实施例的各种结构示意图。这些图并非是按比例绘制的,其中为了清楚表达的目的,放大了某些细节,并且可能省略了某些细节。图中所示出的各种区域、层的形状以及它们之间的相对大小、位置关系仅是示例性的,实际中可能由于制造公差或技术限制而有所偏差,并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions/layers with different shapes, sizes, and relative positions can be additionally designed as needed.

在本公开的上下文中,当将一层/元件称作位于另一层/元件“上”时,该层/元件可以直接位于该另一层/元件上,或者它们之间可以存在居中层/元件。另外,如果在一种朝向中一层/元件位于另一层/元件“上”,那么当调转朝向时,该层/元件可以位于该另一层/元件“下”。In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, the layer/element may be directly on the other layer/element, or there may be intervening layers/elements in between. element. Additionally, if a layer/element is "on" another layer/element in one orientation, the layer/element can be located "below" the other layer/element when the orientation is reversed.

电子是一种波长极短的波,电子束曝光的精度可以达到纳米量级,但是在非导电衬底上的应用存在电子在表面累积导致曝光效果差的问题。Electrons are waves with extremely short wavelengths, and the precision of electron beam exposure can reach the nanometer level, but the application on non-conductive substrates has the problem of poor exposure effect due to the accumulation of electrons on the surface.

本发明发现在曝光之前在电子束胶表面先形成一层薄铝膜,可以解决上述问题。The present invention finds that a thin aluminum film is formed on the surface of the electron beam glue before exposure, which can solve the above problems.

具体地,如图2所示的流程,在需要刻蚀图案的衬底上先涂覆电子束胶。电子束胶可采用正性电子束光刻胶或负性电子束光刻胶,可采用聚甲基丙烯酸甲酯、聚α-氯代丙烯酸三氟乙酯、聚丁砜、聚氢倍半硅氧烷等材料。本发明的衬底并不限于晶圆,可以是没有制作光电结构的半导体载体,例如硅衬底、碳化硅衬底、绝缘体上硅衬底、锗衬底、绝缘体上锗衬底、硅锗衬底等,或者在以上衬底上制作了光电结构的载体。Specifically, in the process shown in FIG. 2 , electron beam glue is firstly coated on the substrate to be etched with a pattern. Electron beam glue can use positive electron beam photoresist or negative electron beam photoresist, polymethyl methacrylate, poly α-trifluoroethyl chloroacrylate, polybutylene sulfone, polyhydrogen silsesquisil Oxygen and other materials. The substrate of the present invention is not limited to a wafer, and may be a semiconductor carrier without a photoelectric structure, such as a silicon substrate, a silicon carbide substrate, a silicon-on-insulator substrate, a germanium substrate, a germanium-on-insulator substrate, a silicon-germanium substrate bottom, etc., or the carrier of the photoelectric structure is fabricated on the above substrate.

接下来在电子束胶上形成铝膜。铝膜可以防止溅射过程中导致电子束胶性质改变,起到导电作用,也可以让大部分电子在曝光过程中穿过铝膜抵达电子束胶,使电子束胶感光。这一步通过控制铝膜的形成条件和厚度,可以更大程度改善曝光效果,减少或消除电子的衬底表面的累积。Next, an aluminum film is formed on the electron beam glue. The aluminum film can prevent the properties of the electron beam glue from being changed during the sputtering process and play a conductive role. It can also allow most of the electrons to pass through the aluminum film to reach the electron beam glue during the exposure process, making the electron beam glue photosensitive. In this step, by controlling the formation conditions and thickness of the aluminum film, the exposure effect can be improved to a greater extent, and the accumulation of electrons on the substrate surface can be reduced or eliminated.

在一些实施方式中,优选采用常温溅射形成铝膜,厚度控制在

Figure BDA0003828725930000041
左右,例如
Figure BDA0003828725930000042
范围内的任意厚度,
Figure BDA0003828725930000043
Figure BDA0003828725930000044
等,更优选
Figure BDA0003828725930000045
此处的常温指20~35℃。In some embodiments, the aluminum film is preferably formed by sputtering at room temperature, and the thickness is controlled at
Figure BDA0003828725930000041
left and right, for example
Figure BDA0003828725930000042
Any thickness within the range,
Figure BDA0003828725930000043
Figure BDA0003828725930000044
etc., more preferably
Figure BDA0003828725930000045
The normal temperature here means 20-35 degreeC.

在一些实施方式中,所述电子束胶的厚度与所述铝膜的厚度比例为3:1。In some embodiments, the ratio of the thickness of the electron beam glue to the thickness of the aluminum film is 3:1.

之后即可对电子束胶进行电子束曝光,电子束可以穿过铝膜抵达电子束胶,同时由于铝膜的导电作用电子不会在表面累积,使电子束胶更好地曝光。这一步中电子束的曝光路径或图形根据所要刻蚀的图案而定,例如本发明的方法可以用于形成浅沟槽隔离、形成电极接触孔、栅极堆叠层的分割等。Afterwards, electron beam exposure can be performed on the electron beam glue, and the electron beam can pass through the aluminum film to reach the electron beam glue. At the same time, due to the conductivity of the aluminum film, electrons will not accumulate on the surface, so that the electron beam glue can be better exposed. The exposure path or pattern of the electron beam in this step depends on the pattern to be etched. For example, the method of the present invention can be used to form shallow trench isolation, form electrode contact holes, and divide gate stack layers.

最后进行显影,显影液优选采用TMAH显影液,其对铝膜和曝光或未曝光的电子束胶都有很好的溶解性,因此可以被一同去除,免去了后续的去除步骤。Finally, developing is carried out, and the developer is preferably TMAH developer, which has good solubility to the aluminum film and the exposed or unexposed electron beam glue, so it can be removed together, eliminating the need for subsequent removal steps.

在上文所述的光刻方法中,在形成铝膜之前还可以先在所述电子束胶上形成硬掩膜层。硬掩膜层主要运用于多重光刻工艺中,首先把多重光刻胶图像转移到硬掩膜上,然后通过硬掩膜将最终图形刻蚀转移到衬底上,可采用TiN、SiN、SiO2等材料。In the photolithography method described above, a hard mask layer may also be formed on the electron beam glue before forming the aluminum film. The hard mask layer is mainly used in the multiple photolithography process. First, the multiple photoresist images are transferred to the hard mask, and then the final pattern is etched and transferred to the substrate through the hard mask. TiN, SiN, SiO can be used 2 and other materials.

以上对本公开的实施例进行了描述。但是,这些实施例仅仅是为了说明的目的,而并非为了限制本公开的范围。本公开的范围由所附权利要求及其等价物限定。不脱离本公开的范围,本领域技术人员可以做出多种替代和修改,这些替代和修改都应落在本公开的范围之内。The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the present disclosure is defined by the appended claims and their equivalents. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of the present disclosure, and these substitutions and modifications should all fall within the scope of the present disclosure.

Claims (9)

1.一种电子束光刻方法,其特征在于,包括下列步骤:1. An electron beam lithography method, is characterized in that, comprises the following steps: 在衬底上涂覆电子束胶;Coating electron beam glue on the substrate; 在所述电子束胶上形成铝膜;forming an aluminum film on the electron beam glue; 对所述电子束胶进行电子束曝光;Carrying out electron beam exposure to the electron beam glue; 最后显影。Develop last. 2.根据权利要求1所述的电子束光刻方法,其特征在于,所述铝膜的厚度达到
Figure FDA0003828725920000011
2. The electron beam lithography method according to claim 1, wherein the thickness of the aluminum film reaches
Figure FDA0003828725920000011
3.根据权利要求2所述的电子束光刻方法,其特征在于,所述铝膜的厚度达到
Figure FDA0003828725920000012
3. The electron beam lithography method according to claim 2, wherein the thickness of the aluminum film reaches
Figure FDA0003828725920000012
4.根据权利要求1-3任一项所述的电子束光刻方法,其特征在于,在20~35℃下采用溅射法形成所述铝膜。4. The electron beam lithography method according to any one of claims 1-3, characterized in that the aluminum film is formed by sputtering at a temperature of 20-35°C. 5.根据权利要求1所述的电子束光刻方法,其特征在于,使用TMAH进行所述显影。5. The electron beam lithography method according to claim 1, wherein said developing is performed using TMAH. 6.根据权利要求1所述的电子束光刻方法,其特征在于,所述衬底为硅衬底、碳化硅衬底、绝缘体上硅衬底、锗衬底或绝缘体上锗衬底。6 . The electron beam lithography method according to claim 1 , wherein the substrate is a silicon substrate, a silicon carbide substrate, a silicon-on-insulator substrate, a germanium substrate or a germanium-on-insulator substrate. 7.根据权利要求1所述的电子束光刻方法,其特征在于,在形成所述铝膜之前还包括:先在所述电子束胶上形成硬掩膜层。7. The electron beam lithography method according to claim 1, further comprising: forming a hard mask layer on the electron beam glue before forming the aluminum film. 8.一种浅沟槽隔离的形成方法,其特征在于,采用权利要求1-7任一项所述的电子束光刻方法在半导体载体上形成浅沟槽隔离。8. A method for forming shallow trench isolation, characterized in that the shallow trench isolation is formed on a semiconductor carrier by using the electron beam lithography method according to any one of claims 1-7. 9.一种电极接触孔的形成方法,其特征在于,采用权利要求1-7任一项所述的电子束光刻方法形成所述电极接触孔。9. A method for forming an electrode contact hole, characterized in that the electrode contact hole is formed by using the electron beam lithography method according to any one of claims 1-7.
CN202211066906.4A 2022-09-01 2022-09-01 Electron beam lithography method, shallow trench isolation and method for forming electrode contact holes Pending CN115639730A (en)

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