CN100533768C - A silicon base bar single electronic transistor manufacture method - Google Patents
A silicon base bar single electronic transistor manufacture method Download PDFInfo
- Publication number
- CN100533768C CN100533768C CNB2006101095610A CN200610109561A CN100533768C CN 100533768 C CN100533768 C CN 100533768C CN B2006101095610 A CNB2006101095610 A CN B2006101095610A CN 200610109561 A CN200610109561 A CN 200610109561A CN 100533768 C CN100533768 C CN 100533768C
- Authority
- CN
- China
- Prior art keywords
- spin coated
- silicon
- manufacture method
- source
- leakage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 98
- 239000010703 silicon Substances 0.000 title claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims description 38
- 230000003647 oxidation Effects 0.000 claims description 37
- 238000007254 oxidation reaction Methods 0.000 claims description 37
- 239000002070 nanowire Substances 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 19
- 230000007797 corrosion Effects 0.000 claims description 19
- 238000005260 corrosion Methods 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 239000007772 electrode material Substances 0.000 claims description 17
- 239000012528 membrane Substances 0.000 claims description 17
- 238000000609 electron-beam lithography Methods 0.000 claims description 15
- 238000001259 photo etching Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000011161 development Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- -1 leakage Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 206010020751 Hypersensitivity Diseases 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101095610A CN100533768C (en) | 2006-08-10 | 2006-08-10 | A silicon base bar single electronic transistor manufacture method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101095610A CN100533768C (en) | 2006-08-10 | 2006-08-10 | A silicon base bar single electronic transistor manufacture method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101123272A CN101123272A (en) | 2008-02-13 |
CN100533768C true CN100533768C (en) | 2009-08-26 |
Family
ID=39085506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101095610A Active CN100533768C (en) | 2006-08-10 | 2006-08-10 | A silicon base bar single electronic transistor manufacture method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100533768C (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3520143A4 (en) | 2016-09-30 | 2020-06-17 | INTEL Corporation | Single electron transistors (sets) and set-based qubit-detector arrangements |
CN106935501B (en) * | 2016-10-19 | 2023-08-22 | 中国人民解放军国防科学技术大学 | Method for preparing single-electron transistor by assembling gold particles with polystyrene microsphere template |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1383213A (en) * | 2002-06-13 | 2002-12-04 | 上海交通大学 | Single-electron transistor with nano metal oxide wire |
CN101090134A (en) * | 2006-06-14 | 2007-12-19 | 中国科学院微电子研究所 | Silicon-base plane side grid single electronic transistor and manufacturing method thereof |
-
2006
- 2006-08-10 CN CNB2006101095610A patent/CN100533768C/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1383213A (en) * | 2002-06-13 | 2002-12-04 | 上海交通大学 | Single-electron transistor with nano metal oxide wire |
CN101090134A (en) * | 2006-06-14 | 2007-12-19 | 中国科学院微电子研究所 | Silicon-base plane side grid single electronic transistor and manufacturing method thereof |
Non-Patent Citations (2)
Title |
---|
Doped silicon single electron transistors with singleislandcharacteristics. R. Augke, W. Eberhardt, et al.Applied Physics Letters,Vol.76 No.15. 2000 * |
Fabrication and characterization of Coulomb Blockadedevices in silicon,. R.Augke, W. Eberhardt, et al.Microelectronic Engineering,Vol.46(1999) . 1999 * |
Also Published As
Publication number | Publication date |
---|---|
CN101123272A (en) | 2008-02-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101090134A (en) | Silicon-base plane side grid single electronic transistor and manufacturing method thereof | |
Namatsu et al. | Fabrication of thickness‐controlled silicon nanowires and their characteristics | |
US20030008459A1 (en) | Method of manufacturing semiconductor device and flash memory | |
CN101452963A (en) | Metallic nanocrystalline floating gate non-volatile memory and manufacturing method thereof | |
CN100492664C (en) | A SOI base top bar single electronic transistor making method | |
CN100466204C (en) | A making method for nano coulomb structure | |
CN100533768C (en) | A silicon base bar single electronic transistor manufacture method | |
CN101246817B (en) | Method for producing silicon quantum wire on insulating layer | |
CN101383379A (en) | Nanocrystalline floating gate memory of multi-medium composite tunnel layer and manufacturing method | |
CN101381070A (en) | Method for preparing radio frequency single electron transistor displacement sensor | |
CN100492665C (en) | A SOI base top bar single electronic transistor making method | |
CN101093803A (en) | Method for preparing self-aligned emitter of bipolar transistor with heterojunction of indium phosphide | |
CN101783364B (en) | Nano electronic part and production method thereof | |
CN101312212A (en) | Non-volatile memory utilizing high K medium and nanocrystalline floating gate and its manufacture method | |
CN101276841A (en) | Nanocrystalline floating gate non-vaporability memory and manufacturing method thereof | |
CN101383285B (en) | Method for single electronic transistor preparation | |
CN101759140A (en) | Method for manufacturing silicon nano structure | |
CN101494224A (en) | Memory and method for producing the same | |
CN101399289A (en) | Nanocrystalline floating gate non-vaporability memory with double layer tunneling medium structure and manufacturing method | |
CN112687826B (en) | Preparation method of quantum dot device and quantum dot device | |
CN101800242B (en) | Nano electron device using nanocrystal material as Coulomb island and manufacture method thereof | |
CN101276836B (en) | Single electron transistor based on SOI quantum wire and manufacturing method thereof | |
CN101017781A (en) | Improvement of the method for making heterogeneous dual-pole transistor T-type emission pole metal figure | |
CN112542510B (en) | Spin field effect transistor based on carbon nano tube and preparation method thereof | |
CN101521181B (en) | Method for manufacturing single-electron memory |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130422 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130422 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130422 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |