CN1383213A - Single-electron transistor with nano metal oxide wire - Google Patents
Single-electron transistor with nano metal oxide wire Download PDFInfo
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- CN1383213A CN1383213A CN 02112059 CN02112059A CN1383213A CN 1383213 A CN1383213 A CN 1383213A CN 02112059 CN02112059 CN 02112059 CN 02112059 A CN02112059 A CN 02112059A CN 1383213 A CN1383213 A CN 1383213A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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Abstract
This invention relates to a nanometer metal oxidation line single electron transistor by adopting super-thin millicron metal oxide line as the one electron transistor channel region with the thickness: 3nm, width: one electron local area length xi, and the length: 2-5 Xi. The electrodes of the source, drain and grid are led out by Au or Al films. In the sidegrid structure, an air gap d is between the grid which is at the side of the channel and the channel. In the top grid structure, the grid is at the top of the channel region and an oxidation layer in between. A field oxidation layer separates the source, drain and the grid electrodes. A single component of this invention can be smaller than 10nm with the superiority of working under room temp and low voltage.
Description
Technical field:
The present invention relates to a kind of single-electron transistor with nano metal oxide wire, belong to the nanoelectronic technical field.
Background technology:
Since last century the seventies begin, the chip integration in the microelectronics industry turned over according to More's law in per 18 months.The raising of this specific character mainly is because by optimizing and improve prior art, thereby makes the characteristic size of MOSFET device constantly reduce to obtain.Yet, the minimum characteristics size will be near 100nm, switching current will only contain 1000 electronics or still less, the uncertain behavior of quantum effect physically and little electric current and technical restriction, such as power consumption, the complexity of design, tunnel current will hinder general circuit and connect the application that ratio is dwindled principle.For technical problem of conventional cmos and ever-increasing huge investment, make and under any circumstance all can not expect the channel length of MOSFET that can remain to and be lower than 10nm, people can only seek new nanometer electronic device structure.Because the structure of single electron crystal can be as small as atomic scale, just becomes first-selected object.
Proposed in the multiple single-electronic transistor structure with experimental verification, most representative structure is titanium coulomb island single-electronic transistor (K.Matsumomoto, STM/AFM Nano-Oxidation Process toRoomTemperature Operated Single Electron Transistor and Other Devices, Proceeding of theIEEE.Vol.85.No.4, Appil 1997,612-628).Though this single-electronic transistor can at room temperature be worked, it is too big that the potential barrier that needs takies chip size, and complex process, will accurately make up the wide barrier layer of tens nm to around each coulomb island.
Summary of the invention:
The objective of the invention is at the deficiencies in the prior art, a kind of single-electron transistor with nano metal oxide wire is provided, can at room temperature work, higher density is integrated, and technology is easy, and the single-electronic transistor of energy and cmos vlsi compatibility.
For realizing such purpose, in the technical scheme of the present invention, based on electronics in the nano metal oxide wire transport according to local length be the characteristics that the local electronic state of ξ can transmit single electronics, directly adopt the channel region (or be called active area) of ultrathin nanometer metal oxide wire (as TiOx) as single-electronic transistor, it is 3nm that this nano metal oxide wire channel region has thickness, width is 1 electronic localization length ξ, length is 2～5 electronic localization length ξ, and source electrode, drain electrode, gate electrode are drawn by Au film or Al film.
Consider the needs of working and room temperature, the physical dimension of single-electronic transistor must be a nanoscale, thereby it is integrated to help high density, because junction capacitance is minimum, the RC time constant is corresponding to be reduced, and helps the raising of operating rate, because operating current and operating voltage are all very little, so power consumption is extremely low.Has unique advantage at aspects such as superelevation integrated level and little power consumptions.The ultrathin nanometer metal oxide wire is because technology and semiconductor nano cmos vlsi technical compatibility make ultrathin nanometer metal oxide wire single-electronic transistor might become a kind of high density integrated nanometer device that extremely has competitiveness.
Ultrathin nanometer metal oxide wire single-electronic transistor structure of the present invention can have two kinds of forms, and a kind of is side grid type ultrathin nanometer metal oxide wire single-electronic transistor structure, and a kind of is top gate type ultrathin nanometer metal oxide wire single-electronic transistor structure.In the side grating structure, source electrode and drain electrode are at the two ends of channel region, and the gate electrode of opening or ending that the control single electron conducts channel region is positioned at a side of channel region, and the air gap distance between gate electrode and the channel region is d.In the top gate type structure, source electrode and drain electrode are at the two ends of channel region, the control single electron to the gate electrode of opening or ending of channel region conduction be positioned at channel region above, be gate oxide between gate electrode and the channel region, separate with field oxide between source electrode, drain electrode, the gate electrode.
Ultrathin nanometer metal oxide wire single-electronic transistor of the present invention can at room temperature be worked, and the size of individual devices can be as small as below the 10nm yardstick, and can ultra dense degree integrated, operating voltage be low, and technology is easy, can and the cmos vlsi technical compatibility.
Ultrathin nanometer metal oxide wire single-electronic transistor structure of the present invention both had been applicable to the transistor that adopts titanium oxide TiOx to make, also be applicable to other metal oxides, as niobium oxide NbOx, the single-electronic transistor that aluminium oxide Al Ox, perovskite structure oxide etc. make.Description of drawings and embodiment:
Below in conjunction with drawings and Examples technical scheme of the present invention is further described.
Fig. 1 is a side grid type ultrathin nanometer metal oxide wire TiOx single-electronic transistor structural representation of the present invention.
Fig. 2 is a top gate type ultrathin nanometer metal oxide wire TiOx single-electronic transistor structural representation.
As shown in Figure 1, on the silicon chip substrate 1 one deck SiO is arranged
2Insulating barrier 2, it is 3nm that thickness is arranged on the insulating barrier 2, width W is a ξ, length L is the channel region 6 of titanium oxide (TiOx) line of 2～5 ξ as single-electronic transistor, the two ends of channel region 6 are source electrode 4 and drain electrode 5, gate electrode 3 is positioned at a side of channel region 6, with the air-gap separation at channel region 6 centers be d, gate electrode 3 is used to control single electron opening or end the channel region conduction.
Substrate 1 is the thick monocrystalline silicon piece of 0.3mm, and insulating barrier 2 is the thick SiO of 100nm
2Film, between gate electrode 3 and the channel region 6 is 10nm apart from d, drain electrode 5, source electrode 4 and gate electrode 3 are formed by Au or Al film.
In the embodiments of the invention, at first choose the polishing monocrystalline silicon piece as substrate 1, one deck SiO then grows
2Dielectric film 2 is used for the substrate electric insulation, then uses sputtering method at SiO
2Thick ultra-thin titanium (Ti) film of deposition 3nm on the dielectric film 2, go out channel region 6 with scanning tunnel microscope (STM) local oxidation, remove all the Ti films except that source, leakage and gate electrode, Au that the final evaporation 1000nm left and right sides is thick or Al film anti-carve the back and form (Au/Ti or Al/Ti) drain electrode 5, source electrode 4 and gate electrode 3.
Figure 2 shows that top gate type ultrathin nanometer metal oxide wire TiOx single-electronic transistor structure.As shown in Figure 2, being connected to of the structure of this single-electronic transistor and position: one deck SiO is arranged on the silicon chip substrate 1
2Insulating barrier 2, it is 3nm that thickness is arranged on the insulating barrier 2, width W is a ξ, length L is the channel region 6 of titanium oxide (TiOx) line of 2～5 ξ as single-electronic transistor, the two ends of channel region 6 are source electrode 4 and drain electrode 5, gate electrode 3 be positioned at channel region 6 above, be used to control single electron opening or end to channel region 6 conduction, be gate oxide 7 between gate electrode 3 and the channel region 6, separate with field oxide 8 between source electrode 4, drain electrode 5 and the gate electrode 3.
In the embodiments of the invention, at first choose the polishing monocrystalline silicon piece as substrate 1, one deck SiO then grows
2Dielectric film 2, be used for the substrate electric insulation, then on dielectric film 2, deposit thick ultra-thin titanium (Ti) film of 3nm with sputtering method, going out width with scanning tunnel microscope (STM) local oxidation is that W, length are the channel region 6 of titanium oxide (TiOx) line of L as single-electronic transistor, removing all the Ti films except that source, drain electrode, then is deposition field oxide SiO
2, etch away the thick SiO of 300nm on source, leakage and the gate electrode
2, and then deposit the thick grid oxygen of 50nm again, etch away the thick SiO of 50nm on source, the drain electrode again
2Au that the final evaporation 1000nm left and right sides is thick or Al film anti-carve the back and form Au/Ti or Al/Ti drain electrode 5, source electrode 4, Au or Al gate electrode 3, isolation source, leakage and gate electrode be field oxide 8, thickness is 300nm.
From ultrathin nanometer metal oxide wire TiOx single-electronic transistor grid-control leakage, source current-voltage characteristic curve, single-electronic transistor of the present invention as can be seen has good coulomb blockade and single electron oscillation effect.The mean oscillatory cycle is approximately about 1.25V, and corresponding equivalent gate capacitance is: C
G=e/V
G=1.28 * 10
-19About F.
Claims (5)
1, a kind of single-electron transistor with nano metal oxide wire is characterized in that on the silicon chip substrate (1) one deck SiO being arranged
2Insulating barrier (2), it is 3nm that thickness is arranged on the insulating barrier (2), width W is a ξ, length L is the nano metal oxide wire channel region (6) of 2～5 ξ, the two ends of channel region (6) are source electrode (4) and drain electrode (5), gate electrode (3) is positioned at a side of channel region (6), and the air-gap separation between gate electrode (3) and the channel region (6) is d, constitutes the side grating structure.
2, as the said single-electron transistor with nano metal oxide wire of claim 1, it is characterized in that said gate electrode (3) be positioned at channel region (6) above, be gate oxide (7) between gate electrode (3) and the channel region (6), separate with field oxide (8) between source electrode (4), drain electrode (5) and the gate electrode (3), constitute the top gate type structure.
3, as the said single-electron transistor with nano metal oxide wire of claim 1, it is characterized in that substrate (1) is a monocrystalline silicon piece, insulating barrier (2) is the thick SiO of 100nm
2Film, between gate electrode (3) and the channel region (6) is 10nm apart from d.
4, as claim 1 or 2 said single-electron transistor with nano metal oxide wire, it is characterized in that drain electrode (5), source electrode (4) and gate electrode (3) are formed by Au or Al film.
5,, it is characterized in that said nano metal oxide wire adopts titanium oxide TiOx, niobium oxide NbOx, aluminium oxide Al Ox or perovskite structure oxide as claim 1 or 2 said single-electron transistor with nano metal oxide wire.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100466204C (en) * | 2006-06-07 | 2009-03-04 | 中国科学院微电子研究所 | Preparation method of nano-scale coulomb island structure |
| CN100492664C (en) * | 2006-08-10 | 2009-05-27 | 中国科学院微电子研究所 | Preparation method of SOI-based top gate single-electron transistor |
| CN100492665C (en) * | 2006-08-09 | 2009-05-27 | 中国科学院微电子研究所 | Preparation method of SOI-based top gate single-electron transistor |
| CN100533768C (en) * | 2006-08-10 | 2009-08-26 | 中国科学院微电子研究所 | Method for manufacturing silicon-based side gate single-electron transistor |
| CN101364594B (en) * | 2007-08-09 | 2010-06-02 | 中国科学院半导体研究所 | Silicon based single electron neure quantum circuit |
| CN101276836B (en) * | 2007-03-28 | 2010-06-09 | 中国科学院微电子研究所 | Single electron transistor based on SOI quantum wire and manufacturing method thereof |
| CN101065811B (en) * | 2004-05-25 | 2011-03-30 | 国际商业机器公司 | Method of fabricating a tunneling nanotube field effect transistor |
| CN105932049A (en) * | 2016-05-23 | 2016-09-07 | 北京华碳元芯电子科技有限责任公司 | Nanometer diode device and preparation method thereof |
| US10381468B2 (en) | 2017-03-21 | 2019-08-13 | International Business Machines Corporation | Method and structure for forming improved single electron transistor with gap tunnel barriers |
-
2002
- 2002-06-13 CN CNB021120595A patent/CN1176499C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101065811B (en) * | 2004-05-25 | 2011-03-30 | 国际商业机器公司 | Method of fabricating a tunneling nanotube field effect transistor |
| CN100466204C (en) * | 2006-06-07 | 2009-03-04 | 中国科学院微电子研究所 | Preparation method of nano-scale coulomb island structure |
| CN100492665C (en) * | 2006-08-09 | 2009-05-27 | 中国科学院微电子研究所 | Preparation method of SOI-based top gate single-electron transistor |
| CN100492664C (en) * | 2006-08-10 | 2009-05-27 | 中国科学院微电子研究所 | Preparation method of SOI-based top gate single-electron transistor |
| CN100533768C (en) * | 2006-08-10 | 2009-08-26 | 中国科学院微电子研究所 | Method for manufacturing silicon-based side gate single-electron transistor |
| CN101276836B (en) * | 2007-03-28 | 2010-06-09 | 中国科学院微电子研究所 | Single electron transistor based on SOI quantum wire and manufacturing method thereof |
| CN101364594B (en) * | 2007-08-09 | 2010-06-02 | 中国科学院半导体研究所 | Silicon based single electron neure quantum circuit |
| CN105932049A (en) * | 2016-05-23 | 2016-09-07 | 北京华碳元芯电子科技有限责任公司 | Nanometer diode device and preparation method thereof |
| CN105932049B (en) * | 2016-05-23 | 2021-02-12 | 北京华碳元芯电子科技有限责任公司 | Nanometer diode device and preparation method thereof |
| US10381468B2 (en) | 2017-03-21 | 2019-08-13 | International Business Machines Corporation | Method and structure for forming improved single electron transistor with gap tunnel barriers |
| US11069800B2 (en) | 2017-03-21 | 2021-07-20 | International Business Machines Corporation | Single electron transistor with gap tunnel barriers |
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| CN1176499C (en) | 2004-11-17 |
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