KR100661744B1 - 플라즈마 처리장치 - Google Patents

플라즈마 처리장치 Download PDF

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Publication number
KR100661744B1
KR100661744B1 KR1020040110832A KR20040110832A KR100661744B1 KR 100661744 B1 KR100661744 B1 KR 100661744B1 KR 1020040110832 A KR1020040110832 A KR 1020040110832A KR 20040110832 A KR20040110832 A KR 20040110832A KR 100661744 B1 KR100661744 B1 KR 100661744B1
Authority
KR
South Korea
Prior art keywords
coolant
shower head
chamber
processing apparatus
plasma processing
Prior art date
Application number
KR1020040110832A
Other languages
English (en)
Korean (ko)
Other versions
KR20060072276A (ko
Inventor
이영종
최준영
조생현
황영주
Original Assignee
주식회사 에이디피엔지니어링
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에이디피엔지니어링 filed Critical 주식회사 에이디피엔지니어링
Priority to KR1020040110832A priority Critical patent/KR100661744B1/ko
Priority to CNB200510130190XA priority patent/CN100512591C/zh
Priority to CN2008101725493A priority patent/CN101448357B/zh
Priority to US11/313,022 priority patent/US7886687B2/en
Priority to TW094145700A priority patent/TWI312815B/zh
Publication of KR20060072276A publication Critical patent/KR20060072276A/ko
Application granted granted Critical
Publication of KR100661744B1 publication Critical patent/KR100661744B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020040110832A 2004-12-23 2004-12-23 플라즈마 처리장치 KR100661744B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020040110832A KR100661744B1 (ko) 2004-12-23 2004-12-23 플라즈마 처리장치
CNB200510130190XA CN100512591C (zh) 2004-12-23 2005-12-19 等离子体处理设备
CN2008101725493A CN101448357B (zh) 2004-12-23 2005-12-19 等离子体处理设备
US11/313,022 US7886687B2 (en) 2004-12-23 2005-12-20 Plasma processing apparatus
TW094145700A TWI312815B (en) 2004-12-23 2005-12-22 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040110832A KR100661744B1 (ko) 2004-12-23 2004-12-23 플라즈마 처리장치

Publications (2)

Publication Number Publication Date
KR20060072276A KR20060072276A (ko) 2006-06-28
KR100661744B1 true KR100661744B1 (ko) 2006-12-27

Family

ID=36811739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040110832A KR100661744B1 (ko) 2004-12-23 2004-12-23 플라즈마 처리장치

Country Status (2)

Country Link
KR (1) KR100661744B1 (zh)
CN (2) CN100512591C (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200913798A (en) 2007-09-14 2009-03-16 Advanced Display Proc Eng Co Substrate processing apparatus having electrode member
KR100970201B1 (ko) * 2008-03-17 2010-07-14 주식회사 아이피에스 진공처리장치
TWI646869B (zh) 2011-10-05 2019-01-01 美商應用材料股份有限公司 對稱電漿處理腔室
CN104701121B (zh) * 2013-12-04 2017-01-04 中微半导体设备(上海)有限公司 设有可提高对称性的导气装置的泵以及等离子处理装置
CN106783500A (zh) * 2017-01-03 2017-05-31 京东方科技集团股份有限公司 镀膜设备
US10900124B2 (en) * 2018-06-12 2021-01-26 Lam Research Corporation Substrate processing chamber with showerhead having cooled faceplate
CN109600898B (zh) * 2018-12-13 2020-04-17 大连理工大学 一种喷淋式电极及放电系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
KR100234661B1 (ko) 1992-11-19 1999-12-15 히가시 데쓰로 이방성 에칭장치
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
KR20020009597A (ko) * 1996-04-12 2002-02-01 가나이 쓰도무 플라즈마 처리장치
JP2003179044A (ja) 2001-12-13 2003-06-27 Tokyo Electron Ltd プラズマ処理装置
JP2004342704A (ja) 2003-05-13 2004-12-02 Tokyo Electron Ltd 上部電極及びプラズマ処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
KR100492258B1 (ko) * 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
KR100234661B1 (ko) 1992-11-19 1999-12-15 히가시 데쓰로 이방성 에칭장치
KR20020009597A (ko) * 1996-04-12 2002-02-01 가나이 쓰도무 플라즈마 처리장치
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
JP2003179044A (ja) 2001-12-13 2003-06-27 Tokyo Electron Ltd プラズマ処理装置
JP2004342704A (ja) 2003-05-13 2004-12-02 Tokyo Electron Ltd 上部電極及びプラズマ処理装置

Also Published As

Publication number Publication date
CN101448357B (zh) 2012-07-04
KR20060072276A (ko) 2006-06-28
CN101448357A (zh) 2009-06-03
CN100512591C (zh) 2009-07-08
CN1802066A (zh) 2006-07-12

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