KR100657221B1 - 콜로이드 자기조립에 의한 다공성 마스크의 제조방법 및그 용도 - Google Patents
콜로이드 자기조립에 의한 다공성 마스크의 제조방법 및그 용도 Download PDFInfo
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- KR100657221B1 KR100657221B1 KR1020040111621A KR20040111621A KR100657221B1 KR 100657221 B1 KR100657221 B1 KR 100657221B1 KR 1020040111621 A KR1020040111621 A KR 1020040111621A KR 20040111621 A KR20040111621 A KR 20040111621A KR 100657221 B1 KR100657221 B1 KR 100657221B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (14)
- 메트릭스를 구성하는 입자와 구형을 형성하는 입자를 함유하는 용액으로부터 콜로이드 자기조립에 의해서 메트릭스 안쪽에 구형입자가 적층된 필름형상의 마스크기재를 제조하는 단계;제조된 마스크 기재의 구형입자를 에칭하여 구멍을 형성시키는 단계를 포함하는 콜로이드 자기조립에 의한 다공성 마스크의 제조방법.
- 제 1 항에 있어서, 메트릭스를 구성하는 입자가 폴리스티렌, 폴리메틸메타크릴레이트, 폴리우레탄, 에폭시와 같은 유기분자; 실리카, 타이타니아와 같은 세라믹입자; 금, 은, 플라티늄, 구리, 니켈과 같은 금속입자; , 카드뮴-황, 갈륨-질소와 같은 화합물반도체 입자로 이루어진 군에서 선택되는 것임을 특징으로 하는 콜로이드 자기조립에 의한 다공성 마스크의 제조방법.
- 제 1 항에 있어서, 상기 구형을 형성하는 입자가 폴리스티렌, 폴리메틸메타크릴레이트, 폴리우레탄, 에폭시와 같은 유기분자; 실리카, 타이타니아와 같은 세라믹입자; 금, 은, 플라티늄, 구리, 니켈과 같은 금속입자; , 카드뮴-황, 갈륨-질소와 같은 화합물반도체 입자로 이루어진 군에서 선택되는 것임을 특징으로 하는 콜로이드 자기조립에 의한 다공성 마스크의 제조방법.
- 제 1 항에 있어서, 상기 콜로이드 자기조립에 딥코팅, 스핀코팅, 랭뮤어-블로제트, 화학기상증착, 스퍼터링 및 전기도금으로 이루어진 군에서 선택되는 방법을 이용하는 것을 특징으로 하는 콜로이드 자기조립에 의한 다공성 마스크의 제조방법.
- 제 1 항에 있어서, 상기 에칭에 고온소성; 불산과 같은 강산용액, 톨루엔, 아세톤, 포토레지스트(PR) 제거제와 같은 유,무기 에칭용액을 이용하는 용액에칭; 플라즈마, 고에너지 전자빔, 자외선조사, 오존과 같은 에칭가스를 이용하는 것을 특징으로 하는 콜로이드 자기조립에 의한 다공성 마스크의 제조방법.
- 제 1 항에 있어서, 마스크 기재의 하나의 구형 입자에 3개 또는 4개의 구멍이 형성되는 정도로 에칭하는 것을 특징으로 하는 콜로이드 자기조립에 의한 다공성 마스크의 제조방법.
- 청구항 1 내지 6 중 어느 한 항 기재의 방법으로 제조한 다공성 마스크.
- 청구항 7 기재의 다공성 마스크를 이용한 패터닝 방법.
- 제 8항에 있어서, 다공성 마스크를 패터닝하고자하는 기질에 올려놓고 다공성 마스크의 구멍을 통해 에칭용액, 에칭가스, 에칭 플라즈마, 자외선 및 전자빔으로 이루어진 군에서 선택되는 에칭 소스로 기질의 표면을 에칭하는 것을 특징으로 하는 패터닝 방법.
- 제 9 항에 있어서, 상기 기질이 단분산 입자의 자기조립층인 것을 특징으로 하는 패터닝 방법.
- 청구항 8 기재의 패터닝 방법으로 제조된 다공성 입자.
- 청구항 11 기재의 다공성 입자에 나노물질이 부여된 복합체 입자.
- 청구항 12 기재의 복합체 입자를 이용한 바이오 소자.
- 청구항 12 기재의 복합체 입자를 이용한 광전자 소자.
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KR1020040111621A KR100657221B1 (ko) | 2004-12-24 | 2004-12-24 | 콜로이드 자기조립에 의한 다공성 마스크의 제조방법 및그 용도 |
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KR1020040111621A KR100657221B1 (ko) | 2004-12-24 | 2004-12-24 | 콜로이드 자기조립에 의한 다공성 마스크의 제조방법 및그 용도 |
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KR100657221B1 true KR100657221B1 (ko) | 2006-12-14 |
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WO2008067308A1 (en) * | 2006-11-27 | 2008-06-05 | University Of Florida Research Foundation, Inc. | The growth of cadmium sulfide films under aqueous conditions using a biomimetic approach |
WO2008097495A1 (en) * | 2007-02-02 | 2008-08-14 | Massachusetts Institute Of Technology | Three-dimensional particles and related methods including interference lithography |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4728591A (en) | 1986-03-07 | 1988-03-01 | Trustees Of Boston University | Self-assembled nanometer lithographic masks and templates and method for parallel fabrication of nanometer scale multi-device structures |
KR20040017000A (ko) * | 2001-07-17 | 2004-02-25 | 비피 케미칼즈 리미티드 | 중합 조절 방법 |
KR20040091377A (ko) * | 2003-04-21 | 2004-10-28 | 한국과학기술원 | 백나노미터 이하의 고정밀 나노 미세패턴 및 자성 금속 점정렬 형성방법 |
KR20040105320A (ko) * | 2003-06-05 | 2004-12-16 | 한국과학기술원 | 10나노 이하 사이즈의 바이오 나노어레이 제조방법 |
KR20040105319A (ko) * | 2003-06-05 | 2004-12-16 | 한국과학기술원 | 탄소나노튜브 어레이의 제작방법 |
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- 2004-12-24 KR KR1020040111621A patent/KR100657221B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US4728591A (en) | 1986-03-07 | 1988-03-01 | Trustees Of Boston University | Self-assembled nanometer lithographic masks and templates and method for parallel fabrication of nanometer scale multi-device structures |
KR20040017000A (ko) * | 2001-07-17 | 2004-02-25 | 비피 케미칼즈 리미티드 | 중합 조절 방법 |
KR20040091377A (ko) * | 2003-04-21 | 2004-10-28 | 한국과학기술원 | 백나노미터 이하의 고정밀 나노 미세패턴 및 자성 금속 점정렬 형성방법 |
KR20040105320A (ko) * | 2003-06-05 | 2004-12-16 | 한국과학기술원 | 10나노 이하 사이즈의 바이오 나노어레이 제조방법 |
KR20040105319A (ko) * | 2003-06-05 | 2004-12-16 | 한국과학기술원 | 탄소나노튜브 어레이의 제작방법 |
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