KR100649895B1 - Lid of plasma chamber - Google Patents

Lid of plasma chamber Download PDF

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KR100649895B1
KR100649895B1 KR1020010077373A KR20010077373A KR100649895B1 KR 100649895 B1 KR100649895 B1 KR 100649895B1 KR 1020010077373 A KR1020010077373 A KR 1020010077373A KR 20010077373 A KR20010077373 A KR 20010077373A KR 100649895 B1 KR100649895 B1 KR 100649895B1
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plasma electrode
chamber
plasma
cover
insulating member
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KR1020010077373A
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Korean (ko)
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KR20030047007A (en
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심경식
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주성엔지니어링(주)
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32467Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

단열부재(130)에 의하여 단열이 잘 되기 때문에 챔버 내의 온도를 더욱 높일 수 있게 된다. 또한, 덮개의 냉각수관(145)에 의해 벨자(140)의 외벽이 뜨겁지 않게 되기 때문에 작업자의 안전도 보장받을 수 있게 된다. 그리고, 단열부재(130)에 의해 플라즈마 전극(120)에서 발생하는 노이즈가 외부로 누설되지 않게 된다. 플라즈마 전극(120)은 세라믹환(110)에 의하여 환형 지지판(100)과 절연된다. Since the heat insulation is good by the heat insulating member 130, it is possible to further increase the temperature in the chamber. In addition, since the outer wall of the bell jar 140 is not hot by the cooling water pipe 145 of the cover, the safety of the worker can be guaranteed. In addition, the noise generated by the plasma electrode 120 is prevented from leaking to the outside by the heat insulating member 130. The plasma electrode 120 is insulated from the annular support plate 100 by the ceramic ring 110.

벨자, 단열, 노이즈, 플라즈마Belza, Insulation, Noise, Plasma

Description

플라즈마 챔버의 덮개{Lid of plasma chamber} Lid of plasma chamber             

도 1은 본 발명의 실시예에 따른 플라즈마 챔버의 덮개를 설명하기 위한 개략도이다. 1 is a schematic diagram illustrating a lid of a plasma chamber according to an embodiment of the present invention.

< 도면의 주요 부분에 대한 참조번호의 설명 ><Description of Reference Numbers for Main Parts of Drawings>

100: 환형 지지판 105, 145: 냉각수관100: annular support plate 105, 145: cooling water pipe

110: 세라믹환 120: 플라즈마 전극110: ceramic ring 120: plasma electrode

130: 단열부재 140: 벨자130: heat insulating member 140: Belza

150: 열선150: heating wire

본 발명은 플라즈마 챔버의 덮개에 관한 것으로서, 외부로의 열손실 및 플라즈마 전극에서 발생하는 노이즈(noise)의 외부유출을 최소화할 수 있는 플라즈마 챔버의 덮개에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lid of a plasma chamber, and more particularly to a lid of a plasma chamber capable of minimizing heat loss to the outside and external leakage of noise generated at the plasma electrode.

CVD 공정을 수행하기 위해서는 어느정도 반응온도까지 가열하는 과정이 필요한데, 어떠한 방법으로 가열하느냐에 따라 온벽형(warm wall type)과 냉벽형(cold wall type)으로 구분할 수 있다. In order to perform the CVD process, a process of heating up to a certain reaction temperature is required. The heating method may be classified into a warm wall type and a cold wall type according to the heating method.

냉벽형은 챔버벽은 가열하지 않고 오직 기판만을 가열하는 방식이다. 이 방식에 의하면, 기판 지지부를 통하여 기판 밑부분으로부터 기판을 가열하기 때문에 기판 표면에 형성된 패턴 밀도에 따라서 표면 온도가 약간씩 달라진다. 따라서, 패턴 밀도가 밀한 곳과 소한 곳의 증착태양이 달라져 막이 균일하게 형성되지 않는 단점이 있다. 즉, 로딩 효과(loading effect)가 좋지않다. The cold wall type heats only the substrate without heating the chamber wall. According to this method, since the substrate is heated from the bottom of the substrate through the substrate support, the surface temperature slightly varies depending on the pattern density formed on the substrate surface. Therefore, there is a disadvantage that the film is not uniformly formed because the deposition suns of the place where the pattern density is dense and the place of the place are different. In other words, the loading effect is not good.

반면에, 온벽형은 기판을 직접 가열하는 것이 아니라 챔버벽을 가열하여 챔버 전체의 온도를 상승시키는 것이다. 이는 기판의 윗부분에서 기판을 가열하기 때문에 냉벽형의 경우보다 기판표면에 형성된 패턴의 영향을 덜 받는다. 온벽형의 경우 상당한 공간을 차지하는 반응챔버를 데워야 하기 때문에 전력손실이 많고, 또한 그 온도상승이 용이하지 않다. 이러한 이유 중의 하나가 통상 가열수단이 장착되어 있는 챔버덮개의 단열이 제대로 이루어지지 않기 때문이다. On the other hand, the warm wall type does not directly heat the substrate but rather heats the chamber wall to raise the temperature of the entire chamber. This is less affected by the pattern formed on the substrate surface than in the case of the cold wall type because the substrate is heated at the upper portion of the substrate. In the case of the warm-wall type, since the reaction chamber occupies a considerable space, power loss is large, and the temperature rise is not easy. One of these reasons is that the heat insulation of the chamber cover, in which the heating means is usually mounted, is not performed properly.

따라서, 본 발명이 이루고자 하는 기술적 과제는, 챔버덮개의 단열을 제대로 하여 챔버를 고온으로 가열할 수 있을 뿐만 아니라 플라즈마 전극이 장착되어 있는 경우에 플라즈마 전극에서 발생하는 노이즈가 외부로 방출되지 않도록 할 수 있는 플라즈마 챔버의 덮개를 제공하는 데 있다. Therefore, the technical problem to be achieved by the present invention is to properly heat the chamber cover to properly heat the chamber and to prevent noise generated from the plasma electrode from being discharged to the outside when the plasma electrode is mounted. To provide a lid of a plasma chamber.

상기 기술적 과제를 달성하기 위한 본 발명에 따른 플라즈마 챔버의 덮개는, 상부가 돔형태로 된 챔버를 덮는 챔버덮개로서, 금속재질의 돔형 플라즈마 전극; 상기 플라즈마 전극을 덮되 상기 플라즈마 전극과는 소정간격 이격되도록 설치되며, 벽 내부에는 냉각수가 흐를 수 있는 냉각수관이 수평으로 감겨진 코일형태로 설치된 금속재질의 벨자; 상기 벨자의 내면에 밀착되어 설치되며 상기 플라즈마 전극과는 소정간격 이격되는 돔형 단열부재; 및 상기 플라즈마 전극에 닿지 않으면서 상기 플라즈마 전극을 둘러싸도록 상기 단열부재 내측에 고정 설치되는 가열수단; 을 포함하는 것을 특징으로 한다.
상기 가열수단은 상기 플라즈마 전극을 감싸도록 수평으로 감겨진 코일형태의 열선일 수 있다.
상기 돔형 플라즈마 전극은, 세라믹환의 윗면에 형성된 환형홈에 올려놓여질 수 있는데, 이 때, 상기 세라믹환은 금속재질의 환형 지지판의 윗면에 형성된 환형홈에 끼워 놓여지며, 상기 환형 지지판은 윗부분이 개방된 챔버의 측벽에 올려놓여지는 것이 바람직하다.
Cover of the plasma chamber according to the present invention for achieving the above technical problem is a chamber cover for covering the chamber in the upper portion of the dome shape, a metal dome-type plasma electrode; A metal bell covering the plasma electrode and spaced apart from the plasma electrode by a predetermined interval, and installed in a coil shape in which a coolant pipe through which a coolant flows is wound horizontally; A domed heat insulating member installed in close contact with the inner surface of the bell and spaced apart from the plasma electrode by a predetermined distance; And heating means fixedly installed inside the heat insulating member to surround the plasma electrode without touching the plasma electrode. Characterized in that it comprises a.
The heating means may be a coiled hot wire wound horizontally to surround the plasma electrode.
The domed plasma electrode may be placed in an annular groove formed on the upper surface of the ceramic ring, wherein the ceramic ring is inserted into an annular groove formed on the upper surface of the annular support plate of metal material, and the annular support plate is a chamber in which the upper part is open. It is preferable to be placed on the side wall of the.

이하에서, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명한다. Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.

도 1은 본 발명의 실시예에 따른 플라즈마 챔버의 덮개를 설명하기 위한 개략도이다. 도 1을 참조하면, 환형 지지판(100)은 윗부분이 개방된 챔버(미도시) 측벽에 올려 놓여진다. 환형 지지판(100) 내부에는 냉각수가 흐를 수 있는 냉각수관(105)이 환형으로 설치된다. 환형 지지판(100)는 금속으로 이루어지며 윗면 안쪽부분에는 홈이 환형으로 형성되어 있고, 이 홈에 세라믹환(ceramic ring, 110)이 끼워 놓여진다. 1 is a schematic diagram illustrating a lid of a plasma chamber according to an embodiment of the present invention. Referring to FIG. 1, the annular support plate 100 is placed on a side wall of a chamber (not shown) with an open upper portion. Inside the annular support plate 100, a coolant pipe 105 through which coolant flows is installed in an annular shape. The annular support plate 100 is made of metal, and the grooves are formed in an annular shape on the inner side of the upper surface, and a ceramic ring 110 is inserted into the groove.

세라믹환(110)의 윗면에는 환형홈이 형성되어 있으며 금속재질의 돔형 플라즈마 전극(120)은 이 홈 상에 올려 놓여진다. 세라믹환(110)은 플라즈마 전극(120)과 환형 지지판(100)과의 절연을 위한 것이다. 통상 플라즈마 전극(120)은 석영돔을 덮도록 설치되는데 석영돔은 여기서 도시하지 않았다. An upper surface of the ceramic ring 110 is formed with an annular groove, and the metal dome-shaped plasma electrode 120 is placed on the groove. The ceramic ring 110 is for insulation between the plasma electrode 120 and the annular support plate 100. Typically, the plasma electrode 120 is installed to cover the quartz dome, which is not shown here.

벨자(140)는 세라믹환(110)이 없는 환형 지지판(100)의 윗면 바깥부분에 올려 놓여져서 플라즈마 전극(120)을 덮는다. 이 때, 벨자(140)와 플라즈마 전극(120)은 서로 소정간격 이격된다. 벨자(140) 벽 내부에는 냉각수가 흐를 수 있는 냉각수관(145)이 수평으로 감겨진 코일형태로 설치된다. The bell jar 140 is placed on the outer surface of the upper surface of the annular support plate 100 without the ceramic ring 110 to cover the plasma electrode 120. At this time, the bell jar 140 and the plasma electrode 120 are spaced apart from each other by a predetermined interval. Inside the bell jar 140, a coolant pipe 145 through which coolant flows is installed in a coil wound horizontally.

단열부재(130)는 벨자(140)의 내면에 밀착되어 돔형으로 설치된다. 단열부재(130) 역시 플라즈마 전극(120)과는 소정간격 이격되도록 설치된다. 단열부재(130) 내측에는 가열수단(150)의 예로서 열선(150)이 설치된다. 열선(150)은 수평으로 감겨진 코일형태를 하며 플라즈마 전극(120)에 닿지 않도록 설치된다. The heat insulating member 130 is in close contact with the inner surface of the bell jar 140 and is installed in a dome shape. The heat insulating member 130 is also installed to be spaced apart from the plasma electrode 120 by a predetermined interval. The heating wire 150 is installed inside the heat insulating member 130 as an example of the heating means 150. The heating wire 150 has a coil wound horizontally and is installed not to contact the plasma electrode 120.

상술한 바와 같은 본 발명에 의하면, 단열부재(130)에 의하여 단열이 잘 되기 때문에 챔버 내의 온도를 더욱 높일 수 있게 된다. 또한, 덮개의 냉각수관(145)에 의해 벨자(140)의 외벽이 뜨겁지 않게 되기 때문에 작업자의 안전도 보장받을 수 있게 된다. 그리고, 단열부재(130)에 의해 플라즈마 전극(120)에서 발생하는 노 이즈가 외부로 누설되지 않게 된다. According to the present invention as described above, since the heat insulation is good by the heat insulating member 130, it is possible to further increase the temperature in the chamber. In addition, since the outer wall of the bell jar 140 is not hot by the cooling water pipe 145 of the cover, the safety of the worker can be guaranteed. And, the noise generated in the plasma electrode 120 by the heat insulating member 130 is not leaked to the outside.

본 발명은 상기 실시예에만 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (3)

상부가 돔형태로 된 챔버를 덮는 챔버덮개로서, The chamber cover which covers the chamber in the upper part of the dome shape, 금속재질의 돔형 플라즈마 전극;A metal domed plasma electrode; 상기 플라즈마 전극을 덮되 상기 플라즈마 전극과는 소정간격 이격되도록 설치되며, 벽 내부에는 냉각수가 흐를 수 있는 냉각수관이 수평으로 감겨진 코일형태로 설치된 금속재질의 벨자; A metal bell covering the plasma electrode and spaced apart from the plasma electrode by a predetermined interval, and installed in a coil shape in which a coolant pipe through which a coolant flows is wound horizontally; 상기 벨자의 내면에 밀착되어 설치되며 상기 플라즈마 전극과는 소정간격 이격되는 돔형 단열부재; 및 A domed heat insulating member installed in close contact with the inner surface of the bell and spaced apart from the plasma electrode by a predetermined distance; And 상기 플라즈마 전극에 닿지 않으면서 상기 플라즈마 전극을 둘러싸도록 상기 단열부재 내측에 고정 설치되는 가열수단; 을 포함하는 것을 특징으로 하는 플라즈마 챔버의 덮개. Heating means fixedly installed inside the heat insulating member to surround the plasma electrode without touching the plasma electrode; Cover of the plasma chamber comprising a. 제1항에 있어서, 상기 가열수단이 상기 플라즈마 전극을 감싸도록 수평으로 감겨진 코일형태의 열선인 것을 특징으로 하는 플라즈마 챔버의 덮개. The cover of claim 1, wherein the heating means is a coiled hot wire wound horizontally to surround the plasma electrode. 제1항에 있어서, 상기 돔형 플라즈마 전극은, 세라믹환의 윗면에 형성된 환형홈에 올려놓여지며, 상기 세라믹환은 금속재질의 환형 지지판의 윗면에 형성된 환형홈에 끼워 놓여지며, 상기 환형 지지판은 윗부분이 개방된 챔버의 측벽에 올려놓여지는 것을 특징으로 하는 챔버의 덮개. The method of claim 1, wherein the dome-shaped plasma electrode is placed in an annular groove formed on the upper surface of the ceramic ring, the ceramic ring is fitted into an annular groove formed on the upper surface of the annular support plate of the metal material, the annular support plate is open the upper portion The cover of the chamber, characterized in that placed on the side wall of the chamber.
KR1020010077373A 2001-12-07 2001-12-07 Lid of plasma chamber KR100649895B1 (en)

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KR200459210Y1 (en) * 2009-10-29 2012-03-22 주식회사 테라세미콘 Chamber For Batch Type Substrate Treatment Apparatus
KR101277654B1 (en) * 2011-10-28 2013-06-21 현대제철 주식회사 Device for keeping warmth of impeller

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100786275B1 (en) * 2006-05-22 2007-12-18 주식회사 에스에프에이 Chemical Vapor Deposition Apparatus for Flat Display

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0596551A1 (en) * 1992-11-04 1994-05-11 Novellus Systems, Inc. Induction plasma source
JPH0799098A (en) * 1993-08-02 1995-04-11 Sumitomo Metal Ind Ltd Plasma treating device
JPH07211699A (en) * 1994-01-20 1995-08-11 Plasma Syst:Kk Chamber for semiconductor processing system
JPH09186000A (en) * 1995-12-28 1997-07-15 Anelva Corp Plasma processing device
JPH10149899A (en) * 1996-10-18 1998-06-02 Applied Materials Inc Inductively-coupled parallel flat plasma reactor with conical dome
JP2001217226A (en) * 1997-07-22 2001-08-10 Matsushita Electric Ind Co Ltd Device and method for manufacturing semiconductor device
KR20010087598A (en) * 2000-03-08 2001-09-21 황 철 주 HDP-CVD Apparatus and gap filling method using the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0596551A1 (en) * 1992-11-04 1994-05-11 Novellus Systems, Inc. Induction plasma source
JPH0799098A (en) * 1993-08-02 1995-04-11 Sumitomo Metal Ind Ltd Plasma treating device
JPH07211699A (en) * 1994-01-20 1995-08-11 Plasma Syst:Kk Chamber for semiconductor processing system
JPH09186000A (en) * 1995-12-28 1997-07-15 Anelva Corp Plasma processing device
JPH10149899A (en) * 1996-10-18 1998-06-02 Applied Materials Inc Inductively-coupled parallel flat plasma reactor with conical dome
JP2001217226A (en) * 1997-07-22 2001-08-10 Matsushita Electric Ind Co Ltd Device and method for manufacturing semiconductor device
KR20010087598A (en) * 2000-03-08 2001-09-21 황 철 주 HDP-CVD Apparatus and gap filling method using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200459210Y1 (en) * 2009-10-29 2012-03-22 주식회사 테라세미콘 Chamber For Batch Type Substrate Treatment Apparatus
KR101277654B1 (en) * 2011-10-28 2013-06-21 현대제철 주식회사 Device for keeping warmth of impeller

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