KR200375236Y1 - Heat treatment equipment - Google Patents

Abstract

The present invention relates to a heat treatment apparatus for manufacturing a semiconductor that can uniform the temperature difference of the heater for heating the process tube, the heat treatment apparatus of the present invention includes a heater assembly installed to surround the process tube; The heater assembly includes a heating wire for generating heat; An insulating block surrounding the heating wire; Located between the heating wire and the process tube, and absorbs the non-uniform heat from the heating wire and comprises a heat transfer member uniformly radiates to the process tube.

Description

Heat Treatment Equipment {HEAT TREATMENT EQUIPMENT}

The present invention relates to a semiconductor manufacturing equipment, and more particularly to a heat treatment apparatus for semiconductor manufacturing that can make the temperature difference of the heater for heating the process tube uniform.

In general, a semiconductor device is manufactured through various manufacturing processes. Among them, a chemical vapor deposition (CVD) method is mainly used to deposit polysilicon, a nitride film, or the like on a wafer. The chemical vapor deposition method is a technique of depositing a dielectric film, a conductive film, a semiconducting film, etc. on the wafer surface by supplying a chemical source into a device in a gas state to cause diffusion on the wafer surface.

The CVD method is generally classified into low pressure CVD (LPCVD) and atmospheric pressure CVD (LPCVD) according to the pressure in the apparatus. In addition, plasma CVD (PECVD) and photoexcitation CVD are generally used. It is used. Among them, LPCVD is mainly used in the diffusion process as a method of depositing the necessary material on the surface of the wafer at a pressure lower than the normal pressure.

Even during LPCVD process, the doping-poly process, which is carried out at low temperature (560-570C), is a structural problem, resulting in uneven film thickness on the wafer, causing difficulties in the semiconductor production line process, and affecting wafer quality. Is giving.

The film nonuniformity of such a wafer arises because the temperature distribution inside a quartz tube is not uniform. As shown in the figure, a typical LPCVD apparatus is exposed to the hot wire to the outside, the rate of heat arrival to the quartz tube occurs later in the portion between the hot wire than where the hot wire, there is a slight temperature difference in the quartz tube. This small but minute temperature difference acts as a cause of lowering the film uniformity of the wafer. The film uniformity of the existing LPCVD apparatus is very high, 200 mW.

The LPCVD apparatus periodically performs PM to clean the black film accumulated on the inner surface of the quartz tube, and the wafer film thickness uniformity immediately after the preventive maintenance (PM) is performed immediately before the PM is performed. It has a large deviation (about 200 ms) compared with the film thickness uniformity. As a result of the investigation, as the process proceeds, a black film accumulates on the quartz tube surface (inner surface), which absorbs the radiant heat of the hot wire and diverges it again to reduce the temperature imbalance. As the black film is removed, the temperature imbalance is intensified.

Meanwhile, a heater of a conventional LPCVD apparatus is equipped with a thermocouple (T / C) (also called a thermocouple), which is a noise and vibration generated by electrical effects when the temperature of the heater is raised from 20C to 500C. This causes movement. If the movement of the temperature sensor is repeated continuously, the temperature sensor is shaken or dropped and thus precise temperature control is not achieved. Inaccurate temperature control will result in uneven film thickness of the process. As such, stable fixing of the temperature sensor affects the precise temperature control of the heater, the period of use of the heater, and the thickness of the substrate film.

The present invention is to solve such a conventional problem, an object of the present invention is to provide a new type of heat treatment apparatus capable of improving the temperature uniformity and stable temperature measurement.

1 is a view showing a heat treatment apparatus for chemical vapor deposition according to an embodiment of the present invention;

FIG. 2 is an enlarged view of a part of the heater assembly shown in FIG. 1; FIG.

3A shows a temperature distribution in a conventional heater assembly with exposed hot wires;

Figure 3b is a view showing the temperature distribution in the heater assembly of the present invention having a hot wire buried by the coating film;

4 is a view showing a temperature sensor and an insertion tube installed in a heater assembly;

5 shows an insertion tube;

6 is a view showing a modification of the present invention.

<Description of Symbols for Major Parts of Drawings>

110: process tube 120: heater assembly

122: heat insulation block 130: heat transfer member

132: coating film 140: temperature sensor

142: insertion tube

The heat treatment apparatus for manufacturing a semiconductor according to the present invention for achieving the above object comprises a process tube for receiving a plurality of substrates; A heater assembly installed to surround the process tube; The heater assembly includes a heating wire for generating heat; An insulating block surrounding the heating wire; Located between the heating wire and the process tube, and absorbs the non-uniform heat from the heating wire and comprises a heat transfer member uniformly radiates to the process tube.

According to an embodiment of the present invention, the heat transfer member is a coating film that is applied to the inner wall of the heat insulation block and the heating wire is installed.

According to an embodiment of the present invention, the coating film is applied to a thickness of 2-5mm, the coating film is formed by coating and drying a heat insulating material having heat insulation and heat resistance.

According to an embodiment of the present invention, the coating film includes alumina and silica.

According to an embodiment of the present invention, the heat transfer member is made of a tube having a silicon carbide (SiC) material installed between the heating coating and the process tube.

According to an embodiment of the present invention, the heater assembly includes an insertion tube installed to penetrate the insulation block and a temperature sensor inserted into the insertion tube to measure a temperature inside the heater assembly; The insertion tube includes a tubular body and a flange protruding from the body to prevent the insertion tube from turning or moving.

Hereinafter, with reference to the accompanying drawings, a system for a semiconductor substrate heat treatment process according to the present invention will be described in detail.

Advantages of the present invention as compared to the prior art will become apparent through the detailed description and claims with reference to the accompanying drawings. In particular, the present invention is well pointed out and claimed in the claims. However, the present invention may be best understood by reference to the following detailed description in conjunction with the accompanying drawings. Like reference numerals in the drawings denote like elements throughout the various drawings.

1 is a view showing a heat treatment apparatus for chemical vapor deposition (Chemical Vapor Deposition) according to an embodiment of the present invention.

1 to 2, the heat treatment apparatus 100 according to the present invention is a vertical furnace apparatus that performs a process of diffusing impurities of a desired conductivity type in a substrate under a high temperature atmosphere.

The heat treatment apparatus 100 includes a process tube 110 including an inner tube 112 and an outer tube 114, a heater assembly 120, and a boat 116 on which a plurality of substrates w are stacked. ), The seal cap 118 supporting the boat 116 and coupled to the flange 111 of the process tube 110, and the seal cap 118 connected to the boat 116 to the process tube. Loader device 119 for loading / unloading 110 is provided.

The inner tube 112 is a tube made of quartz, where a quartz boat 116 having a substrate w loaded therein is inserted, and chemical vapor deposition proceeds on the substrate w. The outer tube 114 is installed on the outside of the inner tube 112 serves to seal the inside, the tube exhaust pipe 148 is installed in the upper center of the outer tube (114). The tube exhaust pipe 148 is configured to directly exhaust the internal air of the process tube 110.

One side of the flange 111 of the process tube 110 is provided with a gas inlet 111a for injecting a chemical source gas into the inner tube 112, the other side is connected to the pump (not shown) outside An air inlet 111b for sucking air to reduce the pressure inside the tube 114 is provided.

The heater assembly 120 is installed outside the outer tube 114 to heat the substrate w to a predetermined temperature.

FIG. 2 is an enlarged view of a part of the heater assembly shown in FIG. 1.

As shown in FIGS. 1 and 2, the heater assembly 120 includes an insulating block 122 including an upper block 122a, a lower block 122b, and a side block 122c. A heat wire 124 for generating heat is installed inside the heat insulating block 122, and a cooling water circulation line 126 is installed outside the heat insulating block 122. In addition, a protective cover 126a is installed to surround the cooling water circulation line 126 to protect the cooling water circulation line 126. The hot wire is supported by the ceramic support 170.

In particular, the heater assembly 120 includes a heat transfer member 130. The heat transfer member 130 is positioned between the hot wire 124 and the process tube 110 to absorb the non-uniform heat from the hot wire and then uniformly radiate radiant heat to the process tube 110. The heat transfer member 130 is composed of the coating film 132 is applied to the inner wall of the heat wire and the heat insulating block 122 is installed 2-5mm thickness. For example, since the heat treatment apparatus 100 proceeds at a high temperature, the coating film 132 is preferably made of a heat insulating material having excellent heat insulation and heat resistance, and preferably made of a heat insulating material containing alumina and silica. This heat insulating material is made in the state of porridge and applied to the inner wall of the heat insulating block 122, the heating wire and the heating wire is installed or sprayed with a thickness of 2-4mm, and then dried. As such, the present invention can convert the existing heat treatment apparatus into a device having excellent temperature uniformity without changing the structure of the heater assembly 120. If the coating film 132 is thickly applied to more than 5mm, the heat efficiency of the heating wire 124 is cut off a lot, and the thermal efficiency may be reduced. When the coating film is applied to a thickness of 2mm or less, the coating film may be too high due to high heat. There is a possibility of breakage.

The heater assembly 120 having the heat transfer member 130 is preferably used in a doping-poly process (which proceeds at a low temperature of 560-570C during the LPCVD process) where temperature uniformity is more important than thermal efficiency. .

3a shows the temperature distribution in a conventional heater assembly 10 with exposed hot wires 12, FIG. 3b shows a heater assembly 120 of the present invention with hot wires 124 buried by a coating film 132. Shows the temperature distribution in. The graphs in the boxes in FIGS. 3A and 3V are graphs showing temperature deviations.

3A and 3B, in the conventional heater assembly 10, heat emitted from the heating wire 12 directly reaches the surface of the process tube 14, where the surface of the process tube 14 is adjacent to the heating wire. It can be seen that the temperature deviation is large in the portion w1 and the portion w2 between the heating wires. On the contrary, in the heater assembly 120 of the present invention, the heat emitted from the heating wire 124 heats the coating film 132, and heat is emitted through the heated coating film 132, where the heating wire is adjacent to the portion w1. It can be seen that the temperature deviation of the portion w2 between the heating wires is relatively small. As such, in the heat treatment apparatus 100 of the present invention, the coating film 132 becomes a medium for heating the process tube in a relatively uniform state rather than non-uniform heat emitted from the heating wire 124, thereby improving the film uniformity of the wafer. It can be improved from 200 Hz to less than 50 Hz.

As shown in FIGS. 4 and 5, the heater assembly 120 includes a thermocouple (T / C) 140 (also called a thermocouple) and an insertion tube 142. The insertion tube 142 is installed through the insulating block 122, the temperature sensor 140 is inserted into the insertion tube 142 is to measure the temperature inside the heater assembly.

As shown in FIG. 5, the insertion tube 142 has a tubular body 145 having an insertion hole 144 into which the temperature sensor is inserted, and a flange 146 protruding from the body. This flange has straight portions 147 cut at both sides. The flange 147 of this shape serves to prevent the insertion tube 142 is rotated or moved. As such, the heater assembly 120 of the present invention has a stable temperature sensor 140 is fixed by the insertion tube 142, even if noise and vibration occurs during the process (particularly when the temperature rises), precise temperature measurement is possible Become. The stable fixing of the temperature sensor affects the precise temperature control of the heater, the period of use of the heater, and the thickness of the substrate film.

6 is a view showing a modification of the present invention.

The heat treatment apparatus 100 ′ of the present invention illustrated in FIG. 6 includes a process tube 110, a heater assembly 120, and a plurality of process tubes 110 having the same configuration and function as the heat treatment apparatus 100 according to the embodiment illustrated in FIG. 1. It has a boat 116 and the like that the substrate (w) is loaded, the description thereof will be omitted in the present modification because it has been described in detail above. However, in the present modified example, the heat transfer member 130 is composed of a cylindrical heat transfer tube 134 installed between the hot wire 124 and the process tube 110 has a structural feature. The tube 134 is made of silicon carbide (SiC) material. This heat transfer tube 134 has the same function as the coating film described above. In other words, the heat transfer tube 134 absorbs uneven heat from the hot wire 124 and then uniformly radiates radiant heat to the process tube.

The above detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, which can be used in various other combinations, modifications, and environments. In addition, changes or modifications may be made within the scope of the inventive concept disclosed in the present specification, the scope equivalent to the disclosed contents, and / or the scope of the art or knowledge in the art. The above-described embodiments are intended to describe the best state in carrying out the present invention, and the use of other inventions such as the present invention to other conditions known in the art, and the specific fields of application and uses of the invention required. Various changes are also possible. Thus, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

As described in detail above, the present invention can improve temperature uniformity and enable stable temperature measurement, thereby improving wafer film thickness uniformity.

Claims (9)

In the heat treatment apparatus for semiconductor manufacturing: A process tube accommodating a plurality of substrates; A heater assembly installed to surround the process tube; The heater assembly Heating wire for generating heat; An insulating block surrounding the heating wire; And a heat transfer member positioned between the hot wire and the process tube to absorb non-uniform heat from the hot wire and evenly dissipate to the process tube. The method of claim 1, The heat transfer member is a heat treatment apparatus, characterized in that the coating film is applied to the inner wall of the heat insulation block and the heating wire is installed. The method of claim 2, The coating film is a heat treatment apparatus, characterized in that applied to a thickness of 2-5mm. The method of claim 2, The coating film is a heat treatment apparatus, characterized in that formed by coating and drying a heat insulating material having heat insulation and heat resistance. The method of claim 2, The coating film is a heat treatment apparatus comprising alumina and silica. The method of claim 1, And the heat transfer member is a tube installed between the heating coating and the process tube. The method of claim 6, The tube is a heat treatment device, characterized in that made of silicon carbide (SiC) material. The method of claim 1, The heater assembly and the insertion tube is installed through the insulating block; A temperature sensor inserted into the insertion tube and measuring a temperature inside the heater assembly; The insertion tube includes a tubular body and a flange protruding from the body to prevent the insertion tube from turning or moving. The method of claim 1, And the heat treatment apparatus is a deposition apparatus.