KR100642161B1 - Schottky type ultraviolet rays sensor and its method of making - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Schottky junction type ultraviolet sensing semiconductor device and a method for manufacturing the same. The present invention relates to a buffer layer, a light absorbing layer, and a short circuit on a substrate to increase the optical reactivity and to increase the bonding strength of the Schottky junction layer. In the ultraviolet sensing semiconductor device having a key junction layer and an ohmic junction layer, the buffer layer is made of n-type Al _X Ga _1-X N (0≤X≤1), and the light absorbing layer is n-type Al _X Ga _1-X N (0≤X≤1), wherein the Schottky bonding layer is formed on the light absorbing layer, but the portion deposited with a metal of 100 kW or less heat treated and the portion deposited with an unheated metal. Disclosed is a semiconductor device for detecting ultraviolet rays and a method of manufacturing the same.

UV, Semiconductor, Schottky, Light Reactivity, Adhesion, Heat Treatment, Unheat Treatment

Description

Ultraviolet-sensing semiconductor device and its manufacturing method {Schottky type ultraviolet rays sensor and its method of making}

1 is a cross-sectional view of a semiconductor element for detecting a Schottky junction according to the prior art,

FIG. 2 is a plan view of the ultraviolet sensing semiconductor device shown in FIG. 1;

3 is a cross-sectional view of a semiconductor device for detecting ultraviolet rays according to an embodiment of the present invention;

4 is a plan view of the sensing element shown in FIG. 3;

5 is a plan view and a cross-sectional view sequentially illustrating a manufacturing process of the sensing device illustrated in FIGS. 3 and 4;

6 and 7 are a cross-sectional view and a plan view showing another embodiment of the present invention, respectively;

8 and 9 are cross-sectional and top views, respectively, showing yet another embodiment of the present invention.

* Explanation of symbols for main parts of the drawings

10 substrate 11 low temperature buffer layer

12 high temperature buffer layer 13 light absorbing layer

15: Schottky pad layer 16: Ohmic bonding layer

17: Schottky bonding layer after heat treatment

18: intermediate buffer layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device for sensing ultraviolet rays and a method for manufacturing the same. In particular, a Schottky bonding layer is formed by dividing a region into a metal that has been heat treated in a Schottky electrode structure and a metal that has not been heat treated, thereby increasing a photoreactivity while simultaneously schottky bonding The present invention relates to an ultraviolet sensing semiconductor device suitable for increasing the adhesion of a layer and a method of manufacturing the same.

Ultraviolet light is an invisible light that appears outside the short wavelength of visible light when photographed in the solar spectrum, first discovered by German chemist J.W.Liter in 1801. Ultraviolet rays are a general term for a wide range of electromagnetic waves with wavelengths ranging from about 397 to 10 nm, and extremely short ultraviolet rays are hardly distinguished from X-rays. Since ultraviolet rays have a strong chemical effect, infrared rays may also be called chemical rays in response to heat rays. Ultraviolet rays with a wavelength of 400 nm or less are divided into several bands for each wavelength. The UV-A region is 320 nm to 400 nm, and more than 98% of the sunlight reaches the earth's surface. UV-A has the effect of blackening or skin aging on human skin. UV-B ranges from 280nm to 320nm, and only about 2% of sunlight reaches the earth's surface, which has a very serious effect on skin, cataracts, and erythema. UV-B is mostly absorbed by the ozone layer, but recently, the amount reaching the surface by the destruction of the ozone layer is increasing and the area is increasing, which is a serious environmental problem. UV-C ranges from 200nm to 280nm, where everything from sunlight is absorbed into the atmosphere and hardly reaches the earth's surface. This area is widely used for sterilization. One of the quantified effects of ultraviolet rays on the human body is the UV index defined by the amount of UV-B incidence.

Ultraviolet rays can be detected by using a PMT (PhotoMultiplier Tube) or a semiconductor device. Since semiconductor devices are cheaper and smaller than PMT, most of them use a lot of semiconductor devices in recent years. In semiconductor devices, although the energy band gap has a small energy band gap such as gallium nitride (GaN), silicon carbide (SiC), and the like, the silicon (Si) is widely used. Of these, gallium nitride (GaN) -based devices are mainly used in Schottky junction, MSM (Metal-Semi conductor-Metal), and PIN-type devices. Especially, Schottky junction type devices are manufactured. The process is simple and is preferred.

The structure of a conventional Schottky junction UV sensing semiconductor device is shown in FIG. 1. As shown in FIG. 1, a conventional Schottky-junction UV-sensing device first uses gallium nitride (GaN) or silicon carbide on a substrate 1 by using a metal organic chemical vapor deposition (MOCVD) method or a molecular beam epitaxy (MBE) method. The (SiC) layer is grown. Sapphire is most commonly used for gallium nitride (GaN) layer growth, and silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC) are rarely used. glass is also used.

In the case of a sapphire substrate, it grows on the 0001 plane (crystal surface). If it grows immediately due to the lattice constant difference between gallium nitride (GaN) and sapphire, cracks occur and the layer does not grow properly. Therefore, after the low temperature buffer layer 2a is grown at a temperature of 500 to 600 ° C. lower than the normal growth temperature, the growth temperature is raised to grow a layer required for the device. The low temperature buffer layer 2a mainly grows gallium nitride (GaN) or aluminum nitride (AlN) and has a thickness of 0.1 μm or less.

After the low temperature buffer layer 2a is grown, the high temperature buffer layer 2b is grown thereon. The gallium nitride (GaN) layer is mainly grown. Generally, about 0.5 to 2 μm must be grown to cause the substrate 1 and the buffer layer 2a. The effect of one defect is reduced, resulting in good crystallinity of the layer.

The high temperature buffer layer 2b may grow an AlGaN layer when the light absorbing layer is an AlGaN layer. The high temperature buffer layer may be artificially doped with a dopant such as silicon (Si) to maintain the doping concentration in the n-type.

After the growth of the high temperature buffer layer 2b, the light absorbing layer 3 is grown. The growth is performed by changing the composition of the layer according to the wavelength of light to be absorbed. For example, to detect a UV-B region, an AlGaN layer containing about 20% Al is grown, and an AlGaN layer containing about 45% Al is grown to detect a UV-C area.

In the case where the high temperature buffer layer 3 is gallium nitride (GaN) and the light absorption layer is AlGaN, when the Al composition is high, cracks occur during or after growth due to the lattice constant difference, and thus the device does not operate. Another intermediate buffer layer may be inserted between (3). The interposed intermediate buffer layer grows an AlGaN or aluminum nitride (AlN) layer to lower the growth temperature or grow a thinner layer (<0.1 μm) having a larger Al composition than the light absorbing layer 3.

The doping concentration of the light absorbing layer 3 in the case of the AlGaN layer to remain 1E17cm ^-3 or less possible to lower the doping concentration greater efficiency while maintaining the n- type and gatgido a doping concentration of 1E18cm ^-3. The thickness of the light absorbing layer is grown in various ways depending on the structure of the device from 0.1㎛ to about 2㎛.

After the growth, the ohmic junction layer 6 is first formed, or may be formed directly on the light absorbing layer 3, or the light absorbing layer 3 may be etched and formed on the high temperature buffer layer 2b. When the ohmic junction layer 6 is formed in the high temperature buffer layer 2b, the high temperature buffer layer 2b has a higher doping concentration than the light absorbing layer 3, so that the ohmic junction characteristic is good, and the light absorption layer 3 is made of AlGaN. In the case where it is difficult to secure the ohmic bonding characteristics, an AlGaN layer having a lower Al composition than the gallium nitride (GaN) or the light absorbing layer 3 may be formed in the high temperature buffer layer 2b, and the ohmic bonding layer 6 may be formed thereon. . As the metal for forming the ohmic junction, Ti / Al and Cr / Ni / Au are mainly used. In the case of Ti / Al, Ti (<500Å) / (Al (> 3000Å) thicknesses are formed, and metals are deposited, followed by heat treatment at a temperature of> 400 ° C. for an appropriate time in a mixed gas atmosphere containing nitrogen or nitrogen to form an ohmic junction. do.

After the ohmic junction layer 6 is formed, the Schottky junction layer 4 is formed on the light absorbing layer 3, and mainly metals are Ni, Pt, Ru, Au, and the like.

In the case of the Schottky junction ultraviolet sensing element, the ultraviolet transmission of the Schottky junction layer 4 is an important item because light must pass through the Schottky junction layer 4 and enter the light absorbing layer 3. Therefore, most of the metal thickness is formed by depositing less than 500Å.

Also, in order to improve electrical and reliability characteristics, an oxide may be formed by heat treatment after metal deposition. That is, NiO _X or RuO _X Many improved properties have been reported. The heat treatment temperature is variously performed by the metal and the process, and is mainly performed at around 300 ° C.

Indium tin oxide (ITO) is mainly used to further form a light transmitting conductive layer on the Schottky bonding layer 4 to improve electrical properties.

After the Schottky bonding layer 4 is formed, Au is thickly deposited on the Schottky bonding layer 4 for wire connection with an external electrode (not shown) to form the Schottky pad layer 5.

The schottky pad layer 5 mainly uses Ni / Au or Cr / Ni / Au, and may be formed separately on the ohmic junction layer 6. Since the region in which the Schottky pad layer 5 is formed does not transmit light and thus does not function as the Schottky bonding layer 4, when the Schottky pad layer 6 is formed, the back surface of the substrate 1 is wrapped / polished. The total thickness is about 100㎛ and then scribed / breaked and separated into individual elements.

The separate individual device is mounted in a TO-CAN type package or an SMD type package to operate as a sensing element.

In the conventional Schottky junction UV sensing device manufactured as described above, a depletion region is formed in the light absorbing layer 3 in contact with the Schottky junction layer 4 due to the Schottky barrier effect of the Schottky junction layer 4. do. In the depletion layer, there are no electrons or holes capable of moving charges. At this time, electrons or holes generated by light move to the Schottky junction layer 4 and the ohmic junction layer 6, respectively, and current flows. That is, when the sensing element is exposed to ultraviolet light, ultraviolet light passes through the Schottky junction layer 4 and enters a depletion region in the light absorbing layer 3, and the incident ultraviolet light generates electrons / holes. As the schottky junction layer 4 moves holes to the ohmic junction layer 6, current flows, and the current is sensed to measure the amount of incident light of ultraviolet rays.

On the other hand, the lower the doping concentration of the light absorbing layer 3, the greater the thickness of the depletion layer and the greater the amount of electrons / holes generated by light.

In addition, since ultraviolet light is sensed through the Schottky bonding layer 4, the transmittance of the Schottky bonding layer 4 should be good, but the thickness of the metal used should be thin or a metal having good transmittance should be used.

In addition, since the higher the potential barrier by the Schottky junction, the more stable electrical characteristics are formed, the Schottky junction layer 4 is formed by considering the characteristics overall.

In general, in the operation of the sensing device, the bias is not applied externally, but in order to increase the light conversion efficiency, the bias may be applied in the reverse direction. That is, a negative bias is applied to the Schottky bonding layer 4 and a positive bias is applied to the ohmic bonding layer 6. In this case, the thickness of the depletion layer is increased to increase the light change efficiency. When sensing element is packaged as TO-CAN type or SMD type, window should be composed of material which transmits ultraviolet rays. Quartz is mainly used. Or it may be composed of encapsultant of silicon (Si) series.

In the conventional Schottky junction UV sensing element, when Ni, Pt, or the like, which has not been heat-treated, is used as the Schottky junction layer 4, the contact state is changed at the interface with the light absorbing layer 3 during use, resulting in deterioration of properties and poor reliability. Not showing results. In order to solve this problem, a Schottky junction layer 4 is heat-treated to increase UV transmittance and improve reliability. That is, when an oxide is formed by depositing a metal and then heat-treating it in an oxygen-containing atmosphere, UV transmittance is increased and reliability is improved.

However, in the case where the schottky pad layer 5 is formed on the thus formed schottky bonding layer 4, the bonding force between the schottky pad layer 5 and the schottky bonding layer 4 is reduced, so that the bonding process or subsequent steps are performed. There is a disadvantage in that the Schottky pad layer 5 falls in the process.

The present invention has been made to solve the shortcomings of the above-described conventional Schottky junction UV detection semiconductor device, an object of the present invention is to increase the light transmittance of the Schottky bonding layer and to improve the bonding strength of the Schottky pad layer; The present invention provides a Schottky junction-type semiconductor device for ultraviolet detection.

In order to achieve the above object, the present invention, in the formation of the Schottky junction layer in the Schottky junction-type UV sensing semiconductor device, by forming a heat-treated metal and a non-heat-treated metal together to improve the light transmittance and reliability and short The present invention provides an ultraviolet sensing device having improved structural stability by increasing the bonding force of a keypad layer and a method of manufacturing the same.

Hereinafter, with reference to the accompanying drawings, preferred embodiments that do not limit the present invention will be described in detail.

3 and 4 are cross-sectional views and a plan view showing the structure of a sensing device according to an embodiment of the present invention, in the present embodiment, the conventional Schottky junction type ultraviolet sensing semiconductor device shown in FIGS. 1 and 2. Although the structure of the Schottky bonding layer is substantially the same as that of the conventional structure, there is a difference in that the Schottky bonding layer 17 heat-treated and the Schottky pad layer 15 which is not heat-treated.

FIG. 5 sequentially illustrates a manufacturing process of a semiconductor device for sensing ultraviolet rays according to the embodiments shown in FIGS. 3 and 4.

In the present invention, the substrate 10 mainly uses sapphire, but silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), glass, and the like may also be used.

In the case of a 2 inch diameter sapphire substrate, the thickness is 300 to 450 μm, and a substrate given a tilt, which is mainly used as a growth surface, is used to improve the surface of the grown light absorbing layer.

As a device for growing on the substrate 10, mainly MOCVD, MBE, HVPE and the like are also used. In the case of MOCVD, after the substrate 10 is mounted, the temperature is raised to 1,000 ° C. or more to perform a thermal cleaning process to remove impurities on the surface of the substrate 10, and then grow. First, the low temperature buffer layer 11 is grown. That is, after lowering the growth temperature of the MOCVD to 500 ~ 600 ℃, to grow the low temperature buffer layer 11 to a thickness of 200 ~ 500Å, gallium nitride (GaN) or aluminum nitride (AlN) is grown. The reason why the low temperature buffer layer 11 is grown is to solve this problem because the lattice constant between the substrate 10 and the growing layer is different and crystal growth is not possible.

After the growth of the low temperature buffer layer 11, the growth temperature is raised to 1,000 ° C. or higher, and the high temperature buffer layer 12 is grown. The high temperature buffer layer 12 mainly grows a gallium nitride (GaN) layer, and generally has a thickness of 0.5 to 3 μm and is n-type doped, whether or not artificially doped. Doping concentration was mid. Keep it at E16cm ^-3 to low E18cm ^-3 .

On the high temperature buffer layer 12 is grown a light absorbing layer 13 that absorbs ultraviolet light and generates a current. The light absorbing layer 13 is grown to have a low doping concentration as much as possible to grow a gallium nitride (GaN) or AlGaN layer to a thickness of about 0.1 ~ 2㎛. In the case where the light absorbing layer 13 is AlGaN, if the high temperature buffer layer 12 is gallium nitride (GaN), if the thickness is thick due to the lattice constant difference, cracks are generated, and thus the thickness of the AlGaN layer is limited. For example, in the case of AlGaN layer having 20% Al composition, cracks occur when it is grown at 0.1 µm or more. Therefore, in order to prevent this, an intermediate buffer layer 18 may be inserted between the high temperature buffer layer 12 and the light absorbing layer 13, which is illustrated in FIG. 8.

As the intermediate buffer layer 18, an aluminum nitride (AlN) or an AlGaN layer is mainly grown, and the thickness is formed to be 500 Å or less. The growth temperature may be at a low temperature of 500-600 ° C or at a high temperature of 900-1,000 ° C.

After the growth of the light absorbing layer 13, the grown sample is taken out of the growth apparatus, washed with HF solution, and then proceeds to the chip manufacturing process.

In the chip fabrication process, first, a pattern is formed on the light absorbing layer 13 using a photoresist, a Ti / Al metal is deposited using an electron beam or a thermal evaporator, and then the photoresist is removed to form an ohmic junction as in step b of FIG. 5. Form layer 16. Metals mainly used for forming the ohmic junction layer 16 on the n-type gallium nitride (GaN) or AlGaN layer include Ti / Al, Cr / Ni / Au, and the deposition thickness is Ti (Al). 100 ~ 500Å) and Al (5,000 ~ 10,000Å) are deposited.

The deposited ohmic bonding layer 16 undergoes a heat treatment process to secure ohmic bonding characteristics, and generally, heat treatment is performed for several minutes in a nitrogen or general air atmosphere at a temperature of about 500 ° C.

Some metals, such as Cr / Ni / Au, can secure ohmic bonding properties even without heat treatment. The ohmic junction layer 16 may be formed on the light absorbing layer 13, but when the ohmic junction characteristic is difficult to obtain on the light absorbing layer 13, the light absorbing layer 13 may be etched and formed on the high temperature buffer layer 12. . Etching mainly uses an etching method using an inductively coupled plasma generator (ICP). In the case where the light absorbing layer 13 is AlGaN, it is mainly formed in this way and an embodiment thereof is shown in FIG.

After the ohmic junction layer 16 is formed, a pattern is formed on the region where the Schottky junction layer 17 is to be formed by using a photoresist and thinly deposited Ni, Pt, Pd, Au, etc. using an electron beam or a thermal evaporator. In this state, when the photoresist is removed using a solution capable of removing the photoresist, a patterned Schottky bonding layer 17 is formed as in step c of FIG. 5. As shown in FIG. 5C, the region h in which the Schottky bonding layer is not formed inside the Schottky bonding layer 17 is generally formed to be furthest from the ohmic bonding layer 16. If the ohmic junction layer 16 is formed at one corner of the chip, it is formed at the opposite corner in the diagonal direction. The size of this area (h) is usually composed of a variety of forms, such as circular or square, in the case of a circular diameter is about 50 ~ 200um.

The formation method of the region h in which the Schottky junction layer is not formed at a part in forming the Schottky junction layer 17 described above is a "lift-" method of forming a photoresist first, depositing a metal, and then removing the photoresist. off ”process, and another method is to first deposit the metal and then pattern the photoresist on the deposited metal, forming only the area where the metal is to be removed so that no photoresist is removed and then removing the metal by wet etching or dry etching. Next, there is a method of removing and forming a photoresist, in which the surface of the light absorbing layer 13 may be damaged during the etching process, particularly in the dry etching process, so that the first method "lift-off" mentioned above is used. It is desirable to.

In the present invention, as described above, unlike the prior art, a portion of the Schottky junction layer 17, that is, a portion of the Schottky junction layer 17 is not covered with a metal, that is, the inside of the Schottky junction layer 17. There is a region h on which the metal is not deposited on the upper surface of the light absorbing layer 13.

The thickness of the Schottky metal to be deposited is 10 to 100 kPa in consideration of the transmittance. After the Schottky metal is deposited, the heat treatment is performed, and the temperature is lower than that at the time of forming the ohmic junction layer 16.

When Ni is deposited, NiO _x is formed by heat treatment in an oxygen atmosphere, and the Schottky junction thus formed has an effect of improving transmission efficiency at short wavelengths and improving reliability of the device than Ni which is not heat-treated.

After the Schottky bonding layer 17 is formed, a pattern is formed with a photoresist to form the Schottky pad layer 15, and Ni / Au, Pt / Au, etc. are deposited using an electron beam or a thermal evaporator, and then a photoresist. Is removed to form the schottky pad layer 15 as in step d of FIG.

The deposition thickness of the schottky pad layer 15 is about Ni, Pt (<500 kPa), Au (> 5,000 kPa), and no separate heat treatment is performed. In other words, the schottky bonding is composed of the thermally processed schottky bonding layer 17 and the unheated schottky pad layer 15.

When the schottky pad layer 15 is formed, a thickness corresponding to the wavelength may be deposited using SiO ₂ to prevent reflection of incident ultraviolet rays. After inspecting the characteristics of the device in the wafer state, the good and bad devices are distinguished by ink marks, and then the back side of the substrate 10 is ground / wrapped / polished to form a total thickness of about 100 μm, followed by scribe and break processes. Separate the process into a package process.

In the packaging process, the chips manufactured in the TO-CAN type or SMD type package are die-bonded, and the Schottky pad layer 15 and the ohmic bonding layer 16 are respectively packaged with an anode and a cathode of the package. Wire bonding using electrodes and Au or Al wires.

The final assembly is then encapsulated or encapsulated to completely separate the chip from the external environment.

FIG. 8 shows an example of forming the ohmic junction layer 16 on the high temperature buffer layer 12 without forming the ohmic junction layer 16 on the light absorbing layer 13. In the embodiment of Fig. 8, the light absorbing layer 13 is formed when the band gap is high or it is difficult to obtain ohmic bonding characteristics for other reasons.

FIG. 9 illustrates an example in which an intermediate buffer layer 18 is formed between the high temperature buffer layer 12 and the light absorbing layer 13. If the light absorbing layer 13 is formed of AlGaN, there is a problem that cracks occur when the high temperature buffer layer 12, the gallium nitride (GaN) and the lattice constant grows immediately, to solve this problem. A superlattice layer in which an AlGaN layer or two materials having different compositions are alternately grown is inserted into the intermediate buffer layer 18. In case of the super lattice layer, GaN / AlN, GaN / AlGaN, AlGaN / AlN, etc. are used, and the thickness of each layer should not exceed 200Å. In this case, the ohmic junction layer 16 is formed on the light absorbing layer 13 or on the high temperature buffer layer 12.

The UV sensing device of the present invention configured as described above is separated into individual chips and packaged in a TO-CAN or SMD type to operate. When the bias is reversed or zero bias is applied between the anode and cathode electrodes, Light transmitted through the heat-treated schottky bonding layer 17 and absorbed in the depletion layer formed in the light absorbing layer 13 to generate electrons and holes, which move to the cathode and anode electrodes, respectively, and the current flows. Will be detected.

By changing the composition of the light absorbing layer 13, the wavelength of the ultraviolet light can be controlled. That is, when the AlGaN layer having 20% Al composition is formed as the light absorbing layer 13, only the wavelength of 320 nm or less is absorbed by the band gap and the UV -B and UV-C area can be detected only. If Al composition is formed at 40 ~ 50%, only the wavelength below 280nm can be absorbed and only UV-C area can be detected.

In addition, when the coating having a filter function on the glass used in the package may have various wavelength control functions. That is, when the light absorbing layer 13 is formed of gallium nitride (GaN), it detects all wavelengths of 370 nm or less, but if the glass only transmits 280 to 320 nm, even if the light absorbing layer 13 is formed of gallium nitride (GaN) UV Only area B can be detected.

As described above, the conventional Schottky-junction-type UV-sensing device is composed of only the same Schottky junction layer, that is, a metal that has not been heat-treated or a heat-treated metal. In the case of the heat-treated metal, there is a problem that the adhesion to the schottky pad layer deposited thereon is good while the reliability is high, and according to the present invention, the Schottky bonding layer is made of a very thin (<100Å) metal heat-treated. And the Schottky pad layer which is not heat treated by forming the Schottky pad layer directly on the light absorbing layer with an unheated metal so as to increase the adhesion of the Schottky pad layer is more directly compared to the Schottky bonding layer. Since the contact area is small and does not contact the edge of the Schottky bonding layer, the degradation of reliability can be ignored. .

Claims (10)

In the ultraviolet sensing semiconductor sensing device having a buffer layer, a light absorbing layer, a Schottky bonding layer, an ohmic bonding layer formed on a substrate, The buffer layer is made of n-type Al _X Ga _1-X N (0≤X≤1), The light absorbing layer is made of n-type Al _X Ga _1-X N (0≤X≤1), A Schottky bonding layer is deposited and heat-treated to a thickness of 10 to 100 상 에 on the light absorbing layer, but the inner portion region h of the Schottky bonding layer is formed on the Schottky bonding layer without forming a Schottky bonding layer. And a schottky pad layer on a lower portion of the schottky bonding layer where the metal is not deposited. The method according to claim 1, The substrate is an ultraviolet sensing semiconductor device, characterized in that the alternative from the group consisting of sapphire, silicon carbide (SiC), GaAs, glass (Glass). delete The method according to claim 1, The thickness of the light absorption layer is a semiconductor device for ultraviolet sensing, characterized in that 0.1 ~ 2㎛. The method according to claim 1, The ohmic junction layer is an ultraviolet sensing semiconductor device, characterized in that the alternative from the group containing Al or Al. The method according to claim 1, The metal of the Schottky bonding layer to be heat-treated is selected from the group containing Ni, Pt, Pd ultraviolet sensing semiconductor device. The method according to claim 1, The metal of the schottky pad layer which is not heat treated is selected from the group consisting of Ni, Au, and Pt. In the manufacturing method of the ultraviolet sensing semiconductor device, the buffer layer, the light absorbing layer, the Schottky bonding layer, the ohmic bonding layer formed on the substrate, The buffer layer is made of n-type Al _X Ga _1-X N (0≤X≤1), The light absorbing layer is made of n-type Al _X Ga _1-X N (0≤X≤1), The Schottky bonding layer is formed on the light absorbing layer, but is deposited with a metal selected from the group containing Ni, Pt, Pd, Au, but some of the regions where the Schottky junction is formed so as not to cover the metal, after deposition A heat treatment is carried out, and an optional metal is deposited from the group containing Ni, Au, and Pt on the heat treated Schottky bonding layer, and the Schottky is formed on the light absorbing layer at the lower portion of the Schottky bonding layer region where no metal is deposited. A method of manufacturing a semiconductor device for ultraviolet sensing, characterized in that the pad layer is formed so that the schottky junction is divided into a heat treated schottky junction layer and an unheated schottky pad layer. The method according to claim 8, The Schottky bonding layer is a method for manufacturing a semiconductor device for ultraviolet sensing, characterized in that deposited to a thickness of 10 ~ 100Å. delete

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