KR20140094080A - Light detecting device and package having the same - Google Patents

Abstract

The present invention relates to a light detecting device which detects light of different wavelength ranges with a device by forming different light absorption layers on a substrate, and a light detecting package having the same. One embodiment of the present invention provides a light detecting device which includes a substrate; a first light absorption layer which is formed on the substrate; a second light absorption layer which is formed in a region of the first light absorption layer; and a first electrode layer which is formed on the first and the second light absorption layer, respectively.

Description

[0001] The present invention relates to a light detecting device and a light detecting device including the same,

The present invention relates to a photodetecting device, and more particularly to a photodetecting device in which a plurality of different light absorbing layers are formed on a substrate to detect light in different wavelength regions with one device, To a detection package.

Light can be divided into several bands by wavelength, for example UV-A, UV-B and UV-C in case of ultraviolet rays having a wavelength of 400 nm or less.

Here, the UV-A region is 320 nm to 400 nm, which is 98% or more of the sunlight reaching the surface of the earth, and the skin of the human body is affected by blackening phenomenon or skin aging.

The UV-B range is 280nm to 320nm, which means that only about 2% of the sunlight reaches the surface of the earth. The human body has very serious effects such as skin cancer, cataracts and erythema. UV-B is mostly absorbed by the ozone layer, but the amount of reaching the surface by the destruction of the ozone layer has recently increased and the area has been increasing, which is becoming a serious environmental problem.

UV-C is 200nm ~ 280nm, and everything coming from the sun is absorbed in the atmosphere and hardly reaches the ground surface. This area is widely used for sterilization.

A typical example of the quantification of the effect of the ultraviolet light on the human body is a UV index defined by the UV-B incident amount.

Particularly, there are PMT (PhotoMultiplier Tube) and semiconductor devices which can detect ultraviolet rays. Since semiconductor devices are smaller and smaller than PMT, most of them use semiconductor devices in recent years. In semiconductor devices, GaN (gallium nitride), SiC (silicon carbide) and the like, which are suitable for energy band gap ultraviolet ray detection, are widely used.

In particular, Schottky junctions, metal-semiconductor conductor-metal (MSM), and PIN-type devices are mainly used for GaN-based devices. Particularly, devices of the Schottky junction type The process is simple and preferred.

Here, in the Schottky junction type device, a buffer layer, a light absorbing layer, and a Schottky junction layer are sequentially stacked on a different substrate, a first electrode is formed on a buffer layer or a light absorbing layer, and a second electrode is formed on the Schottky junction layer .

However, in the case of the conventional Schottky junction type device, the device characteristic of detecting only a single wavelength is shown, and therefore, two or more devices are required to detect different wavelength regions.

Accordingly, in Korean Patent Laid-Open Publication No. 10-2007-0106214 (Patent Document 1), a first light-absorbing layer, a second light-absorbing layer and an electrode layer are sequentially formed on a substrate, and as a result, And a semiconductor light-receiving element for detecting another wavelength region.

However, in the case of Patent Document 1, after the wavelength region of the first light absorbing layer is detected at 0-bias, the reverse bias is applied to detect the wavelength region of the second light absorbing layer. At this time, The reactivity value of the absorption layer also increases.

That is, even in the first light absorbing layer that detects the same region, the reactivity value changes according to the reverse bias value, so that it is difficult to recognize the accurate reactivity value. When the reverse bias is further increased to detect another wavelength region of the first light absorbing layer The reactivity value changes by wavelength band.

Therefore, there is a problem that the reactivity value is changed from time to time according to the reverse bias value, and the reactivity value is represented by the change of the minute current, thereby deteriorating the reliability of the product.

KR 10-2007-0106214 A (November 1, 2007 open)

SUMMARY OF THE INVENTION The present invention has been conceived to solve the above-described problems, and an object of the present invention is to provide a light-emitting device and a method of manufacturing the same, in which a plurality of light absorbing layers capable of detecting different wavelength regions are formed in one device, It is possible to detect two or more different wavelength regions in one device and to obtain an accurate reactivity value according to the wavelength and to realize a highly reliable optical detection And an optical detection package including the same.

According to a preferred embodiment of the present invention, there is provided a semiconductor device comprising: a substrate; A first light absorbing layer formed on the substrate; A second light absorbing layer formed on a partial region on the first light absorbing layer; And a first electrode layer formed on the first and second light absorbing layers, respectively.

The light emitting device may further include a second electrode layer formed on the first light absorbing layer and spaced apart from the first electrode layer.

As another example, the second electrode layer may be formed on the bottom surface of the substrate.

The first light absorbing layer may further include a third light absorbing layer formed on a portion of the second light absorbing layer, wherein energy band gaps of the first, second and third light absorbing layers are different from each other.

In addition, a buffer layer may be interposed between the substrate and the first light absorbing layer.

A first Schottky layer is formed on the first light absorbing layer so as to be spaced apart from the second light absorbing layer and a second Schottky layer is formed on the second light absorbing layer so as to be spaced apart from the third light absorbing layer, And a third Schottky layer is formed in a part of the region on the third light absorbing layer.

At this time, the first electrode layer is formed in a part of the first, second, and third Schottky layers.

On the other hand, a first stress relieving layer may be interposed between the second light absorbing layer and the third light absorbing layer.

Further, a second stress relieving layer may be interposed between the first light absorbing layer and the second light absorbing layer.

At this time, the buffer layer may be formed of a low-temperature GaN layer, and the first light-absorbing layer may be formed of a high-temperature GaN layer.

The second light absorbing layer is made of Al _x Ga _1-x N (0 <x <1), and the third light absorbing layer is made of Al _y Ga _{1 -yN} (0 <y < At this time, the Al composition of the second light absorption layer and the Al composition of the third light absorption layer are different from each other.

On the other hand, the first light absorbing layer, the second light absorbing layer and the third light absorbing layer are formed of Al _x Ga _{1 -x} N (0 <x <y), Al _y Ga _{1 -y} N 1) layer and the In _z Ga _{1 -z} N (0 < z < 1) layer.

At this time, the first, second, and third Schottky layers are made of any one of ITO, APO, Pt, W, Ti, Pd, Ru, Cr, Au, Ni and Cr.

The first stress relieving layer is made of Al _d In _{1 -d} N (0 <d ≦ 1), and the second stress relieving layer is made of Al _f In _{1 -f} N (0 < _f ≦ 1) Lt; / RTI &gt;

On the other hand, a lead frame in which depressed portions are formed on the upper side; A light detecting element mounted on the depression and including a plurality of light absorbing layers having different energy band gaps and a first electrode layer formed on each of the plurality of light absorbing layers; And a plurality of first electrode plates spaced apart from each other at one side of the bottom surface of the depressed portion and connected to the first electrode layer by a bonding wire, respectively.

At this time, a second electrode layer is formed on the lowermost light absorbing layer of the plurality of light absorbing layers, the second electrode layer being spaced apart from the first electrode layer, and a second electrode plate formed on the other side of the bottom of the depressed portion, And is electrically connected.

At this time, an element contact plate is formed between the first electrode plate and the second electrode plate so as to be spaced apart from the first electrode plate and the second electrode plate, and the light detecting element is mounted on the element contact plate.

As another example, a second electrode layer may be formed on the bottom surface of the photodetecting device.

At this time, a second electrode plate is formed on the other side of the bottom surface of the depression so as to be separated from the first electrode plate, and the photodetecting element is mounted on the second electrode plate.

In addition, a plurality of first lead wires electrically connected to the plurality of first electrode plates are provided on one side of the lead frame, and a second lead wire electrically connected to the second electrode plate is provided on the other side of the lead frame Respectively.

At this time, the photodetecting device includes a substrate; A first light absorbing layer formed on the substrate; A second light absorbing layer formed on a partial region on the first light absorbing layer; A third light absorbing layer formed on a part of the second light absorbing layer; And a first electrode layer formed on the first, second, and third light absorbing layers, respectively.

A first Schottky layer is formed on the first light absorbing layer so as to be spaced apart from the second light absorbing layer and a second Schottky layer is formed on the second light absorbing layer so as to be spaced apart from the third light absorbing layer, And a third Schottky layer is formed in a part of the region on the third light absorbing layer.

At this time, the first electrode layer is formed in a part of the first, second, and third Schottky layers.

In addition, a buffer layer may be interposed between the substrate and the first light absorbing layer.

Further, a first stress relieving layer may be interposed between the second light absorbing layer and the third light absorbing layer.

In addition, a second stress relieving layer may be interposed between the first light absorbing layer and the second light absorbing layer.

According to a preferred embodiment of the present invention, since the first electrode layers are formed on a plurality of light absorbing layers capable of detecting different wavelength regions and can be individually operated, There is an effect that can be detected.

Further, since it is possible to obtain an accurate response value according to the wavelength without increasing the reverse bias value, the reliability of the product is improved.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a laminated structure of a photodetecting device according to an embodiment of the present invention; FIG.
2 is a schematic view showing a laminated structure of a photodetecting device according to another embodiment of the present invention.
3 is a cross-sectional view of a photodetector according to an embodiment of the present invention;
4 is a plan view of a photodetecting device according to an embodiment of the present invention;
5 is a plan view of a light-sensing package according to an embodiment of the present invention;
6 is a cross-sectional view of a light-sensing package according to an embodiment of the present invention;
7 is a cross-sectional view of a light-sensing package according to another embodiment of the present invention.
8 is a graph illustrating photoreactivity measured according to an embodiment of the present invention.
9 is a sectional view of a photodetecting device according to another embodiment of the present invention.
10 is a plan view of a photodetecting device according to another embodiment of the present invention.
11 is a plan view of a light sensing package according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a photodetector element and a photodetector package including the same according to the present invention will be described with reference to the accompanying drawings. In this process, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation.

In addition, the terms described below are defined in consideration of the functions of the present invention, which may vary depending on the intention or custom of the user, the operator. Therefore, definitions of these terms should be made based on the contents throughout this specification.

For example, where a layer is referred to herein as being "on" another layer or substrate, it may be formed directly on another layer or substrate, or a third layer may be interposed therebetween. In the present specification, directional expressions of the upper side, the upper side (upper side), the upper side, and the like can be understood to mean lower, lower (lower), lower side and the like. That is, the expression of the spatial direction should be understood in a relative direction, and it should not be construed as definitively as an absolute direction.

In addition, the following embodiments are not intended to limit the scope of the present invention, but merely as exemplifications of the elements set forth in the claims of the present invention, and are included in technical ideas throughout the specification of the present invention, Embodiments that include components replaceable as equivalents in the elements may be included within the scope of the present invention.

In addition, although the following embodiments are described in connection with detection of ultraviolet light, it goes without saying that the present invention can be used for detection of light in other wavelength regions.

Example

1 is a schematic view showing a laminated structure of a photodetecting device according to an embodiment of the present invention.

1, a buffer layer 30, a first light-absorbing layer 40, a second light-absorbing layer 40, and a second light-absorbing layer 40 are formed on a substrate 20, for the manufacture of the photodetecting device 10 according to an embodiment of the present invention. The second light absorbing layer 50, the first stress relieving layer 55, and the third light absorbing layer 60 are sequentially stacked.

Here, sapphire, AlN, GaN, SiC, Si, or the like may be used as the substrate 20, and the structure of the device may be changed according to the conductive substrate.

First, the substrate 20 is placed on the susceptor of the reaction tube of the metalorganic chemical vapor deposition (MOCVD) apparatus, and the pressure inside the reaction tube is lowered to 100 torr or less to remove the impurity gas inside the reaction tube.

Thereafter, the surface of the dissimilar substrate 20 was thermally cleaned by maintaining the internal pressure of the reaction tube at 100 torr and the temperature was elevated to 1100 ° C, the temperature was lowered to 550 ° C, and a Ga source and ammonia (NH ₃ ) Temperature GaN layer as the buffer layer 30, wherein the overall gas flow of the reaction tube is determined by hydrogen (H ₂ ) gas.

At this time, in order to ensure crystallinity and optical and electrical characteristics of the first light absorption layer 40, which is a high temperature GaN layer grown on the buffer layer 30 which is a low temperature GaN layer, the buffer layer 30 is preferably formed to a thickness of at least about 25 nm, When the low-temperature AlN layer is grown in the buffer layer 30, it is preferable to grow the low-temperature AlN layer to a thickness of about 25 nm at about 600 ° C.

After the growth of the buffer layer 30, the temperature of the susceptor is increased to 1000 ° C. to 1100 ° C., preferably to 1050 ° C., to grow the first light absorbing layer 40, which is a high-temperature GaN layer. If the temperature is lower than 1000 ° C, the optical, electrical, and crystallographic characteristics deteriorate. If the temperature exceeds 1100 ° C, the surface roughness becomes coarse and crystallinity deteriorates.

The thickness of the first light absorbing layer 40, which is a high-temperature GaN layer, is preferably about 2 탆. Although the n-type characteristics are shown without doping, Si doping may be performed for the n-type effect.

Then, a second light absorbing layer 50 is grown on the first light absorbing layer 40. An Al source is supplied under growth conditions similar to the first light absorbing layer 40 to form an Al _x Ga _{1 - x} N layer (0 < x < 1).

At this time, in order to use the light absorbing layer for detecting the ultraviolet B region in the growth of the second light absorbing layer 50, it is generally necessary to have an Al composition of 15% or more, and in order to increase the light absorbing efficiency, Lt; / RTI &gt;

Second to grow the third light-absorbing layer 60 on the light absorption layer 50, the first light absorbing layer (40) by supplying Al source in similar growth conditions and Al _y Ga _{1 - y} N layer (0 <y < 1).

At this time, in order to use the third light absorbing layer as the light absorbing layer for detecting the ultraviolet C region in the growth of the third light absorbing layer 60, the Al composition should be about 40% or more, The thickness should be 0.1 탆 to 2 탆.

In order to alleviate the stress that may be generated at the interface between the second light absorbing layer 50 and the third light absorbing layer 60, Al _d (t) is formed between the second light absorbing layer 50 and the third light absorbing layer 60 It is preferable that the In _{1 -d} N (0 <d? 1) layer is formed of the first stress relieving layer 55.

In this case, when the high-temperature AlN layer is formed of the first stress relieving layer 55 at about 1050 DEG C, since the energy band gap of the AlN layer is about 6 eV, it is close to the insulating layer and it is difficult to obtain high quality crystallinity. It may interfere with the flow of the minute current depending on the property and the insulating property. Therefore, the thickness is preferably 50 nm or less.

In the case of forming the Al _d In _{1 -d} N (0 <d <1) layer as the first stress relieving layer 55, in order to use the layer containing In, May be formed. In this case, a plurality of layers may be formed in a repeating superlattice form.

As described above, according to the embodiment of the present invention, by making the energy band gaps of the first light absorbing layer 40, the second light absorbing layer 50, and the third light absorbing layer 60 different from each other, The second light absorbing layer 50 and the third light absorbing layer 60 may be Al _x Ga _{1 -x} N (0 < x < y ) Layer, an Al _y Ga _{1 -yN} (x <y <1) layer, and an In _z Ga ₁ -zN (0 <z <1) layer.

That is, a layer of Al _x Ga _{1 -x} N (0 <x <y), Al _y In _{1 -y} N (x <y <1) and In _z Ga _{1 -z} N Three different light absorbing layers may be formed, and the order of each layer may be variously selected.

2 is a schematic view showing a laminated structure of a photodetecting device according to another embodiment of the present invention.

The lamination structure of the photodetecting device according to another embodiment of the present invention is similar to that of the above embodiment with reference to FIG. 1, except that a second stress is applied between the first light absorbing layer 40 and the second light absorbing layer 50 There is a difference in that the relaxed layer 45 is formed.

Therefore, the same reference numerals are assigned to the same components as those of the above-described embodiment with reference to FIG. 1, and redundant description will be omitted.

According to another embodiment of the present invention, a second stress relieving layer 45 (Al _f In _{1 -f} N (0 < _f ≦ 1)) layer is formed between the first light absorbing layer 40 and the second light absorbing layer 50 Is formed.

This is because the difference in lattice mismatch and thermal expansion coefficient between the first light absorbing layer 40 made of the high temperature GaN layer and the second light absorbing layer 50 made of the Al _x Ga _{1 - x} N layer (0 <x <1) cracks are generated, thereby preventing occurrence of problems such as deterioration of properties and reduction in yield.

To solve this cracking problem, a first light-absorbing layer 40 and the second light absorbing layer 50 on the Al In _{f 1 -f} N (0 <f≤1) layer a second stress relieving layer (45) between the As shown in Fig.

When the high-temperature AlN layer is formed of the second stress relieving layer 45 at about 1050 DEG C, the energy band gap of the AlN layer is about 6 eV, which is close to the insulating layer, and it is difficult to obtain high- It may interfere with the flow of the minute current depending on the property and the insulating property. Therefore, the thickness is preferably 50 nm or less.

In the case of forming the Al _f In _{1 -f} N (0 <f <1) layer as the second stress relieving layer 45, in order to use the layer containing In, May be formed. In this case, a plurality of layers may be formed in a repeating superlattice form.

FIG. 3 is a cross-sectional view of a photodetector according to an embodiment of the present invention, and FIG. 4 is a plan view of a photodetector according to an embodiment of the present invention.

According to an embodiment of the present invention, a photodetecting device is configured so that a plurality of different wavelength bands can be detected in one device.

For example, in order to detect three different kinds of wavelength bands in the related art, three types of photodetecting elements need to be present to detect precise reactivity. However, according to one embodiment of the present invention, So that it can be detected by the photodetector.

In the following embodiments, a photodetecting device capable of detecting three different wavelength bands has been described, but the present invention is not limited thereto. The present invention can be applied to a case where two, four, five, etc. It is possible to detect various numbers of different wavelength bands.

In the following embodiments, the laminated structure shown in FIG. 1 is applied, but it is needless to say that the laminated structure shown in FIG. 2 can be applied.

The first light absorbing layer 40, the second light absorbing layer 50, and the third light absorbing layer 60 are formed such that the energy band gaps are different from each other. For example, the first light absorbing layer 40 includes a high- , The second light absorbing layer 50 is made of Al _x Ga _{1 -x} N (0 <x <1), and the third light absorbing layer 60 is made of Al _y Ga _{1 -yN} (0 <y <1) .

Further, as another example, the first light-absorbing layer 40, a second light-absorbing layer 50, a third each _{Al x Ga 1 -x N (0} <x <y) a light absorption layer (60) layer, Al _y Ga _{1 -y N (x <y <} 1) layer, in _z Ga _{1 -z} N may be formed by any one that is (0 <z <1) of the selection do not overlap each other layer.

That is, a layer of Al _x Ga _{1 -x} N (0 <x <y), a layer of Al _y Ga _{1 -yN} (x <y <1) and a layer of In _z Ga _{1 -z} N Three different light absorbing layers may be formed, and the order of each layer may be variously selected.

First, the third light absorbing layer 60, the first stress relieving layer 55 and the second light absorbing layer 50 are etched through dry etching to form a second light absorbing layer 50, The first Schottky layer 71 is formed on a part of the surface of the first light absorbing layer 40 exposed by etching.

Next, the third light absorbing layer 60 and the first stress relieving layer 55 are etched through dry etching so that the third light absorbing layer 60 is formed in a partial region of the second light absorbing layer 50, The second Schottky layer 72 is formed on a part of the surface of the second light absorbing layer 50 exposed by the second light absorbing layer 50.

A third Schottky layer 73 is formed on a part of the surface of the third light absorbing layer 60 remaining after being etched and a first Schottky layer 73 is formed on a portion of the first, second, and third Schottky layers 71, 72, An electrode layer 80 is formed.

The first electrode layer 80 includes a first electrode layer 81 formed on a portion of the first Schottky layer 71 and a second electrode layer 82 formed on a portion of the second Schottky layer 72 And a first-third electrode layer 83 formed on a part of the third Schottky layer 73.

The first, second, and third Schottky layers 71, 72, and 73 may be formed of any one of ITO, APO, Pt, W, Ti, Pd, Ru, Cr, Au, Ni, It is preferable that each layer is formed to a thickness of 10 nm or less considering the transmittance and the Schottky characteristic.

The second electrode layer 90 is formed to have an ohmic characteristic and may be formed on the first light absorption layer 40 so as to be spaced apart from the first Schottky layer 71. A portion of the first light absorption layer 40 It is also possible to form the second electrode layer 90 after etching.

At this time, the second electrode layer 90 may be formed in a bar shape apart from one side of the first Schottky layer 71, and the second light absorbing layer 50 and the third light absorbing layer 60 may be formed, A body portion 91 formed at a corner of the first light absorbing layer 40 and spaced apart from the first Schottky layer 71, And a pair of wing portions 92 extending from the first light absorbing layer 91 along the rim of the first light absorbing layer 40, respectively.

When the second electrode layer 90 is formed of the body portion 91 and the pair of wing portions 92, it is possible to prevent peeling of the second electrode layer 90 due to stress during wire bonding There is also an effect.

Meanwhile, the first electrode layer 80 may be formed of Ni / Au, and preferably has a thickness of 200 nm or more. The second electrode layer 90 may be made of Cr / Ni / Au. The second electrode layer 90 may have a height that corresponds to the upper surface of the third light absorbing layer 60, .

The light detecting element thus formed is capable of detecting light in different wavelength bands in each of the light absorbing layers, and each of the light absorbing layers can be individually operated.

Hereinafter, an example of configuring the light detecting package using the light detecting element 10 as described above will be described with reference to FIGS. 5 and 6. FIG.

FIG. 5 is a plan view of a light-sensing package according to an embodiment of the present invention, and FIG. 6 is a cross-sectional view of a light-sensing package according to an embodiment of the present invention.

5 and 6, the photodetector package 100 according to an embodiment of the present invention includes a lead frame 200 having a depression 210 on an upper surface thereof, a depression 210, And a plurality of first electrode plates 300 spaced apart from each other on one side of the bottom surface of the dimple 210.

At this time, the depressed portion 210 of the lead frame 200 is closed by the transparent window 600 that is seated along the upper edge of the depression 210 to protect the inner photodetector, 600), quartz, sapphire, quartz, etc. may be used.

In addition, the inner circumferential surface of the depression 210 is preferably formed to be inclined in consideration of the reflection of light, or alternatively it may be formed at a right angle.

The photodetecting device 10 described above with reference to FIGS. 3 and 4 can be used as the photodetecting device to be mounted on the depression 210 of the lead frame 200, Has a structure in which a plurality of light absorbing layers having different energy band gaps are sequentially formed step by step, and a first electrode layer 80 is formed on each light absorbing layer.

At this time, a Schottky layer is formed in a partial region on the light absorption layer, and the first electrode layer 80 is formed in a partial region on each Schottky layer.

5, a first Schottky layer 71 is formed on a part of the first light absorption layer 40, and a first electrode layer 81 is formed on a part of the first Schottky layer 71 Is formed. The second schottky layer 72 is formed in a partial region on the second light absorbing layer 50 and the second electrode layer 82 is formed in a partial region on the second schottky layer 72. A third Schottky layer 73 is formed on a part of the third light absorbing layer 60 and a first electrode 1-3 is formed on a part of the third Schottky layer 73.

The first electrode plate 300 includes a first electrode plate 310, a first electrode plate 320 and a first electrode plate 330 spaced apart from each other, The first electrode plate 310 is electrically connected to the first electrode layer 81 by a bonding wire 700 made of Au and the first electrode plate 320 is electrically connected to the first electrode plate 81 by a bonding wire 700 The first to third electrode plates 330 are electrically connected to the first to third electrode layers 83 by the bonding wires 700.

A second electrode layer 90 is formed on the first light absorbing layer 40 in a wing shape away from the first Schottky layer 71. The second electrode layer 90 is formed on the other side of the bottom surface of the depressed portion 210 And the second electrode plate 500 is electrically connected to the bonding wire 700 by a bonding wire 700.

An element contact plate 400 is formed between the first electrode plate 300 and the second electrode plate 500 so as to be spaced apart from the first electrode plate 300 and the second electrode plate 500, The photodetector element 10 is mounted on the plate 400. [

That is, the first electrode plate 300, the second electrode plate 500, and the device contact plate 400 are disposed apart from each other, the device detecting plate 10 is mounted on the device contact plate 400, The 1-1, 1-2, and 1-3 electrode layers 81, 82, and 83 of the device 10 are bonded to the 1-1, 1-2, 1-3 And the second electrode layer 90 of the photodetector element 10 is electrically connected to the second electrode plate 500 by the bonding wire 700. The second electrode layer 90 is electrically connected to the electrode plates 310,

At this time, a plurality of first lead wires 810 electrically connected to the plurality of first electrode plates 300 are connected to the outer electrode lines (not shown) at one side of the lead frame 200, And a second lead wire 820 that is electrically connected to the second electrode plate 500 is protruded from the other side of the lead frame 200.

The first lead line 810 includes a first lead wire 811 electrically connected to the first electrode plate 310 and a second lead wire 811 electrically connected to the first electrode plate 320 -2 lead wire 812 and a first-third lead wire 813 electrically connected to the first-third electrode plate 330, and the 1-1, 1-2, 1-3 lead wires 811, 812, and 813 are spaced apart from each other.

Therefore, by selectively supplying power through each first lead wire 810, each of the light absorbing layers can be made to operate individually.

5 and 6, the depression 210 is filled with an epoxy resin to form the photodetector element 10 (FIG. 7). The photodetector element 10 ) Are protected.

Therefore, the same reference numerals are assigned to the same components as those of the above-described embodiment, and redundant description will be omitted.

7 (a), when the protective layer 600 'is formed by filling the recessed portion 210 of the optical detection package 100a with epoxy resin flat, 120 °, and when the protective layer 600 'is concave as shown by the dotted line, light absorbed at an angle of 120 ° or more can be detected.

7 (b), when the protective layer 600 'in the form of a dome is formed in the depression 210 of the optical detection package 100b, it is absorbed at an angle of 120 degrees or less And the protective layer 600 'may be formed in a trapezoidal shape as shown by a dotted line. That is, the wavelength can be detected at a desired angle according to the shape of the window 600 or the protective layer 600 '.

8 is a graph of photoreactivity measured according to an embodiment of the present invention. In the structure in which a light absorption layer is formed on a single element and each Schottky layer is formed on each light absorption layer, In which the photodetector 10 is separately operated.

Here, the reactivity of (A) is the reactivity of the third light absorbing layer 60, the reactivity of (B) is the reactivity of the second light absorbing layer 50, and the reactivity of (C) (40).

That is, according to the photodetector element 10 of the embodiment of the present invention, it is not necessary to sequentially perform the wavelength bands to be detected in the respective light absorbing layers, and the energy band gap for determining the absorption wavelength of each of the light absorbing layers It does not need to be configured to increase or decrease sequentially.

FIG. 9 is a cross-sectional view of a photodetector according to another embodiment of the present invention, and FIG. 10 is a plan view of a photodetector according to another embodiment of the present invention.

The photodetecting device 10 'according to another embodiment of the present invention shown in FIGS. 9 and 10 is similar to the above-described embodiment with reference to FIGS. 3 and 4, except that the second electrode layer 90' ) Is formed on the bottom surface of the conductive substrate 20 'such as GaN, ZnO, SiC, GaAs or the like.

Therefore, the same components as those shown in Figs. 3 and 4 are denoted by the same reference numerals, and redundant description will be omitted.

Hereinafter, with reference to FIG. 11, an example of configuring a light detecting package using the light detecting element 10 'as shown in FIGS. 9 and 10 will be described.

11 is a plan view of a light detecting package according to another embodiment of the present invention.

The optical detection package 100 'according to another embodiment of the present invention shown in FIG. 11 differs from the embodiment described above with reference to FIG. 5, except that the second There is a difference in that as the electrode layer 90 'is formed, the light detecting element 10' is directly mounted on the second electrode plate 500 'without a separate element contact plate 400 (see FIG. 5).

Therefore, the same components as those shown in Fig. 5 are denoted by the same reference numerals and duplicate descriptions will be omitted.

A plurality of first electrode plates 300 spaced apart from each other are formed on one side of the bottom surface of the depression 210 of the lead frame 200 and a plurality of first electrode plates 300 and a plurality of second electrode plates 300 are formed on the bottom surface of the depression 210. 9 and 10, the second electrode layer 90 'is formed on the bottom surface of the photodetector element 10', that is, the bottom surface of the conductive substrate 20 ', as shown in FIGS. Is formed on the second electrode plate 500 '.

At this time, the 1-1, 1-2, and 1-3 electrode layers 81, 82, and 83 of the photodetector element 10 'are connected to the 1-1 and 1-2 And the second electrode layer 90 of the photodetector element 10 'is electrically connected to the second electrode plate 500' by contact with the first electrode plate 310, 320, and 330, respectively.

A plurality of first lead wires 810 including first, second, and third lead wires 811, 812, and 813 are connected to one end of the lead frame 200 so as to be connected to the external electrode line, And a second lead wire 820 is protruded from the other side of the lead frame 200.

The first lead wire 811 is electrically connected to the first electrode plate 310 and the first lead wire 812 is electrically connected to the first electrode plate 320, The first lead wire 813 is electrically connected to the first electrode plate 330 and the second lead wire 820 is electrically connected to the second electrode plate 500 '.

Therefore, by selectively supplying power through each first lead wire 810, each of the light absorbing layers can be made to operate individually.

10 ', 10': photodetecting device 20, 20 ': substrate
30: buffer layer 40: first light absorbing layer
45: second stress relieving layer 50: second light absorbing layer
55: first stress relieving layer 60: third light absorbing layer
71: first Schottky layer 72: second Schottky layer
73: Third Schottky layer 80: First electrode layer
90, 90 ': second electrode layer
100, 100 ': optical detection package 200: lead frame
300: first electrode plate 400: element contact plate
500,500 ': second electrode plate 600: window
600 ': protective layer 700: bonding wire
810: first lead wire 820: second lead wire

Claims (26)

Board;
A first light absorbing layer formed on the substrate;
A second light absorbing layer formed on a partial region on the first light absorbing layer; And
And a first electrode layer formed on the first and second light absorbing layers, respectively.
The method according to claim 1,
Further comprising a second electrode layer formed on the first light absorbing layer and spaced apart from the first electrode layer.
The method according to claim 1,
And a second electrode layer formed on a bottom surface of the substrate.
The method according to claim 1,
And a third light absorbing layer formed on a portion of the second light absorbing layer, wherein energy band gaps of the first, second, and third light absorbing layers are different from each other.
The method according to claim 1,
Wherein a buffer layer is interposed between the substrate and the first light absorbing layer.
The method of claim 4,
Wherein a first Schottky layer is formed on the first light absorbing layer so as to be spaced apart from the second light absorbing layer and a second Schottky layer is formed on the second light absorbing layer so as to be spaced apart from the third light absorbing layer, And a third Schottky layer is formed in a part of the region on the absorber layer.
The method of claim 6,
Wherein the first electrode layer is formed on a part of the first, second, and third schottky layers, respectively.
The method of claim 4,
Wherein a first stress relieving layer is interposed between the second light absorbing layer and the third light absorbing layer.
The method of claim 8,
And a second stress relieving layer is interposed between the first light absorbing layer and the second light absorbing layer.
The method of claim 4,
Wherein the buffer layer is made of a low-temperature GaN layer, and the first light-absorbing layer is made of a high-temperature GaN layer.
The method of claim 10,
Wherein the second light absorbing layer is made of Al _x Ga _{1 -x} N (0 <x <1), the third light absorbing layer is made of Al _y Ga _{1 -yN} (0 <y <1) Wherein an Al composition of the second light absorbing layer and an Al composition of the third light absorbing layer are different from each other.
The method of claim 4,
The first light absorbing layer, the second light absorbing layer and the third light absorbing layer are formed of Al _x Ga _1-x N (0 <x <y), Al _y Ga _{1 -y} N (x <y < the light detecting element, characterized in that _{layer, in z Ga 1 -z N (} 0 <z <1) that is composed of one do not overlap each other layer of the selection.
7. The semiconductor device according to claim 6, wherein the first, second,
Wherein the first electrode is made of any one of ITO, APO, Pt, W, Ti, Pd, Ru, Cr, Au, Ni and Cr.
The method of claim 9,
Wherein the first stress relieving layer is made of Al _d In _{1 -d} N (0 <d ≦ 1) layer and the second stress relieving layer is made of Al _f In _{1 -f} N (0 < _f ≦ 1) Wherein the light emitting element is a light emitting element.
A lead frame having depressions formed on an upper surface thereof;
A light detecting element mounted on the depression and including a plurality of light absorbing layers having different energy band gaps and a first electrode layer formed on each of the plurality of light absorbing layers; And
And a plurality of first electrode plates spaced apart from each other at one side of the bottom surface of the depressed portion and individually connected to the first electrode layer by a bonding wire.
16. The method of claim 15,
And a second electrode layer formed on the other side of the bottom surface of the depressed portion is electrically connected to the second electrode layer by a bonding wire on the light absorbing layer of the lowermost layer among the plurality of light absorbing layers, And the light emitting diode package is connected to the light emitting diode package.
18. The method of claim 16,
Wherein an element contact plate is formed between the first electrode plate and the second electrode plate so as to be spaced apart from the first electrode plate and the second electrode plate and the light detecting element is mounted on the element contact plate Optical sensing package.
16. The method of claim 15,
And a second electrode layer is formed on a bottom surface of the photodetecting device.
19. The method of claim 18,
Wherein a second electrode plate is formed on the other side of the bottom surface of the depression so as to be spaced apart from the first electrode plate, and the photodetecting element is mounted on the second electrode plate.
The method according to claim 16 or 19,
A plurality of first lead wires electrically connected to the plurality of first electrode plates are provided on one side of the lead frame and a second lead wire electrically connected to the second electrode plate is provided on the other side of the lead frame And a light emitting diode.
18. The light-emitting device according to claim 15,
Board;
A first light absorbing layer formed on the substrate;
A second light absorbing layer formed on a partial region on the first light absorbing layer;
A third light absorbing layer formed on a part of the second light absorbing layer; And
And a first electrode layer formed on the first, second, and third light absorbing layers, respectively.
23. The method of claim 21,
Wherein a first Schottky layer is formed on the first light absorbing layer so as to be spaced apart from the second light absorbing layer and a second Schottky layer is formed on the second light absorbing layer so as to be spaced apart from the third light absorbing layer, And a third Schottky layer is formed in a part of the region on the absorber layer.
23. The method of claim 22,
And the first electrode layer is formed on a part of the first, second, and third schottky layers, respectively.
23. The method of claim 21,
Wherein a buffer layer is interposed between the substrate and the first light absorbing layer.
23. The method of claim 21,
Wherein a first stress relieving layer is interposed between the second light absorbing layer and the third light absorbing layer.
26. The method of claim 25,
And a second stress relieving layer is interposed between the first light absorbing layer and the second light absorbing layer.

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