KR100638814B1 - Small Fuel Reformer of Thin Film Type and Its Production Method - Google Patents

Abstract

Provided are a thin film type small reformer manufactured using a silicon wafer substrate and a method of manufacturing the same.

The present invention comprises a substrate means made of a silicon wafer and formed with a channel therein; Heating means disposed in the substrate means for heating the reforming portion and the carbon monoxide removing portion to different temperatures; A channel connected to a fuel inlet is formed at one side of the substrate means, and the channel includes a reforming unit coated with catalytic means for reforming a hydrocarbon fuel with hydrogen gas; A carbon monoxide removal unit (PROX) having a channel connected to the hydrogen outlet and connected to the channel of the reforming unit, the catalyst unit coated with catalyst means for removing CO gas generated in the reforming unit; And a cover means for covering the upper and lower surfaces of the substrate means.

According to the present invention, by forming a deep and wide channel therein by using a substrate means made of a silicon wafer, an effect of obtaining a compact and high-performance reformer can be obtained.

Silicon wafer substrate, thin film compact reformer, reforming part, carbon monoxide removal part, catalyst, channel

Description

Thin Fuel Reformer of Thin Film Type and Its Production Method

1 is an exploded perspective view showing a laminate type reformer according to the prior art.

Figure 2 is a cross-sectional view showing another stacked reformer according to the prior art.

Figure 3 is an exploded perspective view showing a three-dimensional multilayer reformer according to the prior art.

Figure 4 is an external perspective view showing a thin film type small reformer according to the present invention.

Figure 5 is an exploded perspective view showing a thin film compact reformer according to the present invention.

Figure 6 is a cross-sectional view showing a thin film compact reformer according to the present invention.

7 a), b), c) are diagrams showing various internal channels provided in the thin film compact reformer according to the present invention;

8 is an explanatory diagram showing step by step a manufacturing method of a reformer and heating means of a thin film type small reformer according to the present invention;

FIG. 9 is an explanatory diagram illustrating a method of manufacturing a carbon monoxide removal unit (PROX: Preferential Oxidation) provided in a thin film compact reformer according to the present invention. FIG.

          * Explanation of symbols for main parts of drawings *

1 .... Thin film compact reformer 10 .... Substrate means

30 .... reforming part 32 .... catalytic means

60 .... Carbon Monoxide Removal Unit (PROX) 62 .... Catalytic Means

80 .... heating means 82 .... recessed groove

84 .... Si ₃ N ₄ layer 86 .... SiO ₂ layer

88 .... electrode 100 .... cover means

102 .... fuel inlet 104 .... air inlet

106 .... Hydrogen outlet 120 .... Control circuit section

140 .... Power Supply Part C .... Channel

200 .... Substrate 201,202 .... Bulkhead

203 .... reformer Euro 204 .... catalyst membrane

250 .... Conventional Compact Reformer 251 .... Fuel Evaporator

252,253,254 .... Combustor 257 .... Carbon Monoxide Remover

261,262 ... Insulating support member 310 .... Fuel Processor

314 .... Fuel Reformer 328 .... Heater

332 .. Fuel Cell Stack

The present invention relates to a reformer used in a fuel cell and a method of manufacturing the same. More specifically, by forming a deep and wide channel inside using a silicon wafer substrate, small size and high performance can be obtained, and a micro fuel cell may be integrated. The present invention relates to a thin film type small reformer capable of increasing the power output density of a portable device and a method of manufacturing the same.

Generally, there are many types of fuel cells, such as polymer fuel cells, direct methanol fuel cells, molten carbonate fuel cells, solid oxide fuel cells, phosphate fuel cells, and alkaline fuel cells. It is important. Among them, portable methanol fuel cells (DMFCs) and polymer electrolyte fuel cells (PEMFCs) are most commonly used as portable small fuel cells.

      The difference between these methods is whether the fuel is injected with liquid fuel such as methanol and dimethyl ether (DME) or gaseous hydrogen fuel. The difference in this type represents the difference in power density according to the unit capacity, which is an important factor directly related to the performance of the fuel cell.

      Therefore, it is necessary for a fuel cell to use a liquid fuel in order to obtain a high power output density. For this purpose, a reformer for making a liquid fuel into a gaseous fuel is essential. There is almost no qi. Therefore, the research and development of a small reformer having a high performance is required, and the success of this research has become an essential requirement as a solution to solve the output problem of the small fuel cell.

     The conventional method is described in Korean Patent Laid-Open Publication No. 2005-4729, as shown in FIG. 1, in which a catalyst membrane 204 is formed in a reforming base flow path 203, and a structure is formed by stacking flow paths in parallel. Has In addition, partition walls 201 and 202 protruding to the left and right sides along the flow path 203 are formed on the substrate 200. Such a conventional structure has been provided as a method of increasing the generation of hydrogen ions and electrons while reducing the concentration of methanol reaching the electrolyte membrane of the fuel cell since more methanol passes through the fuel gas having a lower concentration.

      However, such a conventional method has been difficult to make the structure small by forming the catalyst film 204 in the reforming base passage 203 and having a plurality of stacked structures in parallel.

      On the other hand, the conventional method for improving the output density of the electrolyte, catalyst, fuel cell (hydrogen, methanol, DME) to increase the three-phase interface, including the catalyst layer of the membrane-electrode assembly to increase the electrode and polymer membrane, etc. It was concentrated. As an example, as described in Korean Patent Registration No. 00409042, a method of improving the power density by reducing the thickness of the polymer electrolyte membrane and reducing the resistance to ion conduction was proposed.

      However, such conventional techniques relate to membrane-electrode assemblies that are not directly related to the structure of the reformer.

In addition, as another conventional technology, as shown in Korean Patent Registration No. 0434779, by processing the flow path of the separation plate finer than the existing size to promote the convection and diffusion of the reaction gas into the catalyst layer, the concentration and temperature It has been proposed as a method to increase the power density by providing a uniform distribution, and to provide a lighter and smaller fuel cell.

However, this conventional technique also relates to a separator of a fuel cell which is not directly related to the structure of the reformer.

Another conventional technique is the compact reformer of Japanese Patent Laid-Open No. 2004-288573 as shown in FIG.

The conventional small reformer 250 includes a thermal insulation package 258, a fuel evaporator 251 for combustion, power generation fuel evaporator 255, a combustor 252, and a carbon monoxide remover, which are stacked in order in the thermal insulation package 258. 257, a combustor 254, a reformer 256, and a combustor 253. The heat insulation support members 261 and 262 are joined to the lower surface of the combustion fuel evaporator 251, and the fuel evaporator 251 for combustion is supported by the heat insulation support members 261 and 262. Evaporator 251 is positioned away from the inner wall of thermal insulation package 258.

Therefore, such a conventional reformer also has a multi-layered structure, making it difficult to have a desired compact structure.

In addition, a similar conventional technology is Korean Patent Publication No. 2003-28829 as shown in FIG.

This prior art relates to a fuel processor 310, having a monolithic three dimensional multilayer ceramic carrier structure 312 defining a fuel reformer 314, and having an integrated fuel cell stack 332. The reformer 314 has an evaporation zone 316, a reaction zone 318 with a catalyst, and an integral heater 328, wherein the integral heater 328 is thermally coupled to the reaction zone 318. do.

The fuel processor also has an inlet channel 320 for liquid fuel and an outlet channel 322 for hydrogen excess gas. The fuel processor 310 is then formed using a multilayer ceramic technique where the encapsulated catalyst is sintered to provide compact dimensions to convert or reform the incoming fuel into hydrogen excess gas.

However, such a conventional technique was also structurally limited in miniaturizing the structure of the reformer.

      Disclosure of Invention The present invention has been made to solve the above-mentioned problems, and a first object of the present invention is to provide a thin and high performance thin film type small reformer and a method of manufacturing the same by forming a deep and wide channel therein using a silicon wafer substrate. .

      In addition, the present invention is integrally mounted to the micro fuel cell is possible to use a variety of fuels such as methanol, dimethyl ether (dimethyl-ether (DME)), thin film type small reformer that can increase the power output density of portable devices and its It is a second object to provide a manufacturing method.

In order to achieve the above object, the present invention is a fuel cell reformer for producing hydrogen using a hydrocarbon-based liquid fuel,

Substrate means formed of a silicon wafer and having channels formed therein;

Heating means disposed in the substrate means for heating the reforming portion and the carbon monoxide removing portion to different temperatures;

A channel connected to a fuel inlet is formed at one side of the substrate means, and the channel includes a reforming unit coated with catalytic means for reforming a hydrocarbon fuel with hydrogen gas;

A carbon monoxide removal unit (PROX) having a channel connected to the hydrogen outlet and connected to the channel of the reforming unit, the catalyst unit coated with catalyst means for removing CO gas generated in the reforming unit; And

It provides a thin film-type small reformer comprising a; cover means for covering the upper, lower surfaces of the substrate means.

In addition, the present invention is a method for producing a reformer for a fuel cell that produces hydrogen using a hydrocarbon-based liquid fuel,

Providing a substrate means consisting of a silicon wafer and having channels formed therein;

Providing heating means for heating the reforming portion and the carbon monoxide removing portion to the substrate means at different temperatures;

Providing at one side of the substrate means a reforming portion coated with catalytic means for reforming a hydrocarbon fuel with hydrogen gas;

Forming a carbon monoxide removal portion (PROX) coated with catalyst means subsequent to the channel of the reforming portion to remove CO gas generated in the reforming portion; And

Providing a cover means for covering the upper and lower surfaces on the substrate means in order to isolate the reforming part, the carbon monoxide removing part, and the heating means from the outside. To provide.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The thin film compact reformer 1 according to the present invention will produce hydrogen using a hydrocarbon-based liquid fuel, as shown in FIGS. 4 and 5.

The thin film type small reformer 1 according to the present invention has a substrate means 10 made of a silicon wafer and having a channel formed therein.

 The present invention is miniaturized by integrating a reforming portion 30 and a carbon monoxide removal portion (PROX) 60 on one substrate means 10 made of such a silicon wafer.

The substrate means 10 has a micro channel (C) through which the fuel flows through the surface of the substrate means 10, the channel (C) is a width (1000 ~ 100) ㎛ × depth ( It has a size that can be changed in various ways, such as 500 ~ 200) ㎛.

In addition, the substrate means 10 may be provided with various types of channels C, as shown in FIGS. 7A, 7B, and 7C, which will be described later. The fuel inlet 102 is in communication with one side, the hydrogen outlet 106 is formed on the other side.

In addition, the reforming unit 30 is formed in one channel C of the substrate means 10, one side of the channel C is connected to the fuel inlet 102, and the hydrocarbon C is hydrogenated in the channel C. The catalyst means 32 for reforming with gas is coated. The reforming unit 30 converts the fuel into a hydrogen-rich reforming gas by catalytic reaction of steam reforming, partial oxidation, autothermal reaction, and the like, and the catalytic means of the reforming unit 30. As (32), Cu / ZnO or Cu / ZnO / Al ₂ O ₃ is used, and the deposition method may be a method of depositing using RF sputter or supporting a powder state.

In addition, the carbon monoxide removal unit (PROX) 60 is formed after the channel C of the reforming unit 30, and the carbon monoxide removing unit PROX 60 is a channel of the reforming unit 30. Subsequent channel (C) is provided in (C), the channel (C) is connected to a hydrogen outlet (106), and within the channel (C) a catalyst for removing CO gas generated in the reforming section (30) The means 62 is coated.

The carbon monoxide removal unit 60 removes carbon monoxide from the reformed gas by using a catalytic reaction such as an aqueous conversion and a selective oxidation method. The catalyst means 62 used in the carbon monoxide removal unit 60 is preferably any one of Pt, Pt / Ru and Cu / CeO / Al ₂ O ₃ .

      On the other hand, the substrate means 10 has a heating means 80 which will be described later on the back side thereof, that is, on the opposite side of the channel C forming surface on which the reforming portion 30 and the carbon monoxide removing portion 60 are formed. Is placed.

      The heating means 80 is preferably formed in a concave groove 82 formed to form the same trajectory as the front channel C of the substrate means 10 at the rear surface of the substrate means 10, wherein the substrate means 10, the thickness remaining after the formation of the channel C and the concave groove 82 is maintained at several tens of micrometers to several hundred micrometers. By forming the concave groove 82 as described above, the path by which the heat by the heating means 80 is transferred to the reforming unit 30 and the carbon monoxide removing unit 60 is shortened to maximize the heating effect.

The Si ₃ N ₄ layer 84 and the SiO ₂ layer 86 are deposited on the surface of the substrate means 10, and the heating means 80 is generated in the channel C and the recessed groove 82. The SiO ₂ layer 86 is deposited to prevent electrical conduction or the like and to deposit or adhere the catalyst well in the flow channel C through which the fuel flows.

The heating means 80 is disposed on the lower side of the substrate means 10 to heat the reforming portion 30 and the carbon monoxide removal portion 60 through the substrate means 10 to different temperatures. The heating means 80 consists of an electrode 88 such as Ta / Al or Pt deposited on the SiO ₂ layer 86 to prevent oxidation.

The heating means 80 is formed of the electrode 88 formed in the reforming portion 30 and the carbon monoxide removing portion 60 so as to heat different temperatures in the reforming portion 30 and the carbon monoxide removing portion 60, respectively. The thickness can be formed differently. The heating unit 80 may be designed such that the amount of heat applied to the reforming unit 30 and the carbon monoxide removing unit 60 is different, and the heating unit 80 is formed on the lower surface of the substrate unit 10 so that the reforming unit ( 30 and the catalytic means 32 and 62 of the carbon monoxide removing unit 60 are prevented from being oxidized by direct heat by the heating means 80 and preventing the liquid fuel from directly contacting the heating means 80. It can be.

In addition, the present invention includes a cover means 100 for covering the upper and lower surfaces of the substrate means 10. The cover means 100 is made of a glass substrate material such as Pyrex, and is bonded to the upper and lower surfaces of the substrate means 10 to modify the portion 30, the carbon monoxide removing portion 60, and the heating means ( 80) Isolate and insulate the lamp from the outside.

      Meanwhile, the fuel inlet 102, the air inlet 104, and the hydrogen outlet 106 are formed at one side of the cover means 100. The fuel inlet 102 may be connected to a liquid fuel supply pump (not shown) provided separately to receive liquid fuel, and the air inlet 104 may be connected to a separate air supply pump (not shown) to receive oxygen in the air. have.

      In addition, in the thin film type small reformer 1 of the present invention, a control circuit part 120 formed of a circuit board is disposed on a lower surface of the lower cover means 100, which is bonded to the lower cover means 100. It is integrally connected and connected.

      In addition, the control circuit unit 120 includes a power supply unit 140 including a rechargeable battery on one side, and the power supply unit 140 includes a fuel cell in which the reformer 1 of the present invention is mounted. To operate the liquid fuel supply pump, the air supply pump, the heating means 80 and the like at the time of initial driving.

      Accordingly, the power supply unit 140 is electrically connected to the liquid fuel supply pump, the air supply pump, and the electrode 88 of the heating means 80 through the control circuit unit 120, and the control circuit unit ( In this way, the power supply unit 140 appropriately distributes and controls the current supplied from the liquid fuel supply pump, the air supply pump, and the electrode 88 of the heating means 80.

      In addition, the power supply unit 140 and the control circuit unit 120 is the liquid fuel supply pump, the air supply pump and heating means (80) during the initial driving of the fuel cell equipped with the reformer 1 of the present invention. ), But when the fuel cell produces a current, some of the fuel cell may be electrically connected to the power supply 140 to be stored and reused if necessary. In addition, when the power supply unit 140 and the control circuit unit 120 need a sudden high output due to the characteristics of the fuel cell, the power supply unit 140 is electrically connected to draw power from the power supply unit 140 first.

      Hereinafter, the manufacturing method of the thin film type | mold small reformer which concerns on this invention is demonstrated.

In the method of manufacturing a thin film type small reformer according to the present invention, first, a step of providing a substrate means 10 made of a silicon wafer and having a channel C formed therein is performed.

This polishes both sides of the silicon wafer constituting the substrate means 10 and deposits a Si ₃ N ₄ layer 84, as shown in FIG. 8A). In this case, deposition is performed using a low pressure chemical vapor deposition apparatus (LPCVD) or a plasma chemical vapor deposition apparatus (PECVD).

      And, as shown in Figure 8b), after the photo resist (photo resister) 13 is coated on the back side of the silicon wafer, the mask # 1 is subjected to photolithography (Photolithography).

In addition, as shown in FIG. 8C), the Si ₃ N ₄ layer 84 is wet etched or dry etched on the back side of the silicon wafer, and as shown in FIG. 8D, KOH or TMAH ((Tetramethyl ammonium hydroxide) The wet etching treatment is performed using a solution such as the above to form a concave groove 82 to which the heating means 80 described later is attached.

      As shown in FIG. 8E), the photoresist 15 is coated on the front surface of the silicon wafer, and then photolithography of the mask # 2 is performed.

     In addition, as shown in FIG. 8F), the front surface of the silicon wafer is etched using ICP-RIE to form a channel (C).

As shown in FIG. 8G), the SiO ₂ layer 86 is thermally oxidized on both surfaces of the silicon wafer to prevent the electrode 88 of the heating means 80 from being energized with the silicon wafer. ) To a thickness of approximately 1 μm.

      In addition, the present invention is the step of providing a heating means 80 for heating the reforming portion 30 and the carbon monoxide removal portion 60 to different temperatures on the lower side of the substrate means 10, respectively. . This is done by coating the photoresist 17 to form the electrode 88 of the heating means 80 in the recessed groove 82 of the silicon wafer, as shown in FIGS. The photolithographic process is performed using electrode mask # 3.

As shown in FIG. 8J), the concave groove 82 is deposited by sputtering an electrode 88 such as Ta / Al or Pt on the SiO ₂ layer 86. In addition, a portion of the unnecessary electrode 88 and the photo resistor 17 are removed together in a lift-off manner. In this way, the electrode 88 of the heating means 80 is formed in the back recessed groove 82 of the silicon wafer.

Next, the present invention is a step of providing a reforming portion 30 coated with the catalytic means 32 for reforming a hydrocarbon fuel into hydrogen (H ₂ ) gas on one side of the substrate means 10.

This step is a photoresist 19 coating on the front surface of the silicon wafer, as shown in Figure 8k), l) to form the catalyst of the reforming portion 30, and the photo using the catalyst forming mask # 4 After the lithographic process, the catalyst means 32 is deposited or applied to the SiO ₂ layer 86 in the channel C of the reforming portion 30.

In such a case, Cu / ZnO or Cu / ZnO / Al ₂ O ₃ is used as the catalyst means 32 of the reforming unit 30. In this case, the deposition method uses a RF sputter to deposit or support a powder state. Method can be used. Then, the remaining unnecessary catalyst means 32 and the photoresist 19 are removed together using a lift-off method.

      Next, the present invention provides a carbon monoxide removal unit (PROX) coated with catalyst means 62 which is connected to the channel C of the reforming unit 30 to remove the CO gas generated in the reforming unit 30. Forming step 60).

      In this step, the photoresist 21 is coated on the front surface of the silicon wafer, as shown in FIG. 9A, to form the carbon monoxide removal unit (PROX: Preferential Oxidation) (PROX) 60. Photolithographic processing.

      In addition, as shown in Figure 9b), the catalyst means 62 is formed in the channel (C) of the carbon monoxide removal unit 60 by coating or applying, the rest of the lift-off (lift-off) method To remove the photo register 21.

Catalytic means 62 used in the carbon monoxide removal unit 60 is preferably Pt, Pt / Ru, Cu / CeO / Al ₂ O ₃ It is either.

      And finally, the present invention is a cover means for covering the upper and lower surfaces on the substrate means 10 in order to isolate the reforming portion 30, the carbon monoxide removal portion 60 and the heating means 80 and the like ( Providing step 100).

      In this step, the cover means 100 is made of pyrex (pyrex), the pyrex (pyrex) is bonded to both sides of the silicon wafer by the modified portion 30, the carbon monoxide removal unit 60 and the heating means 80 ) To isolate and insulate the light from the outside. The front pyrex of the silicon wafer, that is, the front pyrex coupled to the channel C side of the reforming unit 30 and the carbon monoxide removing unit 60, has a fuel inlet 102, an air inlet 104, and a hydrogen outlet 106. Formed. Therefore, the channel C of the reforming unit 30 is connected to the fuel inlet 102, and the channel C of the carbon monoxide removing unit 60 is arranged to be connected to the hydrogen outlet 106.

      When manufactured as described above, the electrode 88 of the heating means 80 is electrically connected to the power supply 140, the fuel inlet 102 is connected to a liquid fuel supply pump (not shown) to the liquid fuel Received, the air inlet 104 is connected to a separate air supply pump (not shown). In addition, the hydrogen outlet 106 is connected to a stack portion (not shown) for generating a current in the fuel cell to provide hydrogen gas.

When the thin film type reformer of the present invention as described above is supplied with fuel such as methanol or dimethyl ether (dimethyl-ether (DME)) through the fuel inlet 102, it passes through the reforming unit 30 and heats the heating means 80. It is heated through and converted into a mixed gas state such as hydrogen and carbon monoxide by the catalyst means 32.

The mixed gas such as hydrogen and carbon monoxide passes through the carbon monoxide removing unit 60 disposed after the reforming unit 30, and is heated to react with the oxygen in the air provided from the air inlet 104. It is converted into carbon dioxide and removed, and provides hydrogen to the stack portion of the fuel cell through the hydrogen outlet 106.

According to the present invention as described above, by using the substrate means 10 made of a silicon wafer to form a deep and wide channel (C) therein, it is possible to obtain a compact and high-performance reformer.

In addition, the micro fuel cell can be integrated into one body, and various fuels such as methanol and dimethyl ether (DME) can be used as fuels, thereby increasing the power output density of a portable device.

In addition, the present invention arranges the electrode 88 of the heating means 80 in the concave groove 82 of the silicon wafer so that the area of the microchannel C of the reforming portion 30 and the carbon monoxide removing portion 60 is desired. In addition, it can form widely, and accordingly, hydrogen output density can also be raised.

In addition, the electrode 88 of the heating means 80 of various thicknesses representing various types of temperatures as long as the channel C length of the reforming unit 30 and the carbon monoxide removing unit 60 is measured, and various fuel reactions are measured. As a result, a reformer exhibiting an optimal high power output efficiency can be obtained.

While the invention has been shown and described with respect to specific embodiments thereof, those skilled in the art can variously modify the invention without departing from the spirit and scope of the invention as set forth in the claims below. And that it can be changed. Nevertheless, it will be clearly understood that all such modifications and variations are included within the scope of the present invention.

Claims (13)

In a reformer for a fuel cell that produces hydrogen using a hydrocarbon-based liquid fuel, Substrate means formed of a silicon wafer and having channels formed therein; A channel connected to a fuel inlet on one side of the substrate means includes a reforming unit coated with catalytic means for reforming a hydrocarbon fuel with hydrogen gas; A carbon monoxide removal unit (PROX) coated with catalytic means for removing CO gas generated in the reforming unit in a channel which is connected to the channel of the reforming unit and communicated with the hydrogen outlet port; Disposed in a concave groove formed in the rear surface of the substrate means to achieve the same trajectory as the front channel of the substrate means, and the reformed portion and the carbon monoxide removal portion are mutually disposed to heat the reformed portion and the carbon monoxide removal portion at different temperatures. Heating means having electrodes of different thicknesses; And And a cover means covering upper and lower surfaces of the substrate means.       The method of claim 1,       And said heating means is disposed on a lower side of said substrate means to heat said reforming portion and said carbon monoxide removing portion to different temperatures through said substrate means. delete delete       The method of claim 1, Wherein said heating means consists of an electrode of Ta / Al or Pt deposited on an SiO ₂ layer to prevent oxidation.       The method of claim 1,       The cover means is made of Pyrex glass substrate material to isolate and insulate the reforming unit, the carbon monoxide removing unit and the heating means from the outside, characterized in that the thin film type reformer.       The method according to any one of claims 1, 2, 5 and 6,       And a control circuit portion made of a circuit board is disposed on a lower surface of the lower cover means, and the power supply portion made of a rechargeable battery is provided in the control circuit portion. In the method for producing a reformer for a fuel cell to produce hydrogen using a hydrocarbon-based liquid fuel, Providing a substrate means comprising a silicon wafer and having a recess in the outside thereof and a channel in the inside thereof; Providing a reforming portion coated with catalytic means for reforming a hydrocarbon fuel with hydrogen gas in one channel of the substrate means; Forming a carbon monoxide removal portion (PROX) coated with catalyst means for removing CO gas generated in the reforming portion in a channel subsequent to the reforming portion channel; The substrate means such that the heating means has different thicknesses of electrodes in the reforming portion and the carbon monoxide removal portion so as to heat the reforming portion and the carbon monoxide removal portion at different temperatures, respectively, to achieve the same trajectory as the front channel of the substrate means. Placing in a concave groove formed in the back of the; And And providing cover means for covering the upper and lower surfaces on the substrate means so as to isolate the reforming portion, the carbon monoxide removing portion, and the heating means from the outside.       The method of claim 8, Providing the substrate means is formed of a double-sided, the Si ₃ N ₄ layer and the SiO ₂ layer of a silicon wafer, a method for manufacturing a thin-film-based small modification of the channel characterized in that the groove is formed in the SiO ₂ layer.       The method of claim 8, Providing the heating means comprises forming an electrode of Ta / Al or Pt on a SiO ₂ layer in a concave groove of the silicon wafer.       The method of claim 8, The providing of the reforming unit is a method of manufacturing a thin film type small reformer, characterized in that the deposition means or coating the catalyst means of Cu / ZnO or Cu / ZnO / Al ₂ O _{3 in} the SiO ₂ layer in the channel of the reforming portion.       The method of claim 8, The forming of the carbon monoxide removing part may include Pt, Pt / Ru, Cu / CeO / Al ₂ O _{3 in} the channel of the carbon monoxide removing part. Method for producing a thin film type small reformer, characterized in that to form by coating or coating any one of the catalyst means.       The method of claim 8, wherein the providing of the cover means comprises bonding and bonding pyrex to both sides of the silicon wafer to isolate and insulate the reforming portion, the carbon monoxide removing portion, and the heating means from the outside, and the channel of the reforming portion. Is connected to a fuel inlet provided in the cover means, and the channel of the carbon monoxide removing unit is arranged to be connected to a hydrogen outlet provided in the cover means.

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