KR100637652B1 - Light emitting diode that operates regardless of the polarity of the power source and the method for fabricating the same - Google Patents

Abstract

An LED capable of operating regardless of polarity of power is provided to emit light regardless of polarity of applied power while using only one serially-connected LED cell array by supplementing the structure of a metal interconnection between light emitting cells of an LED. A light emitting cell array has a plurality of light emitting cells which includes first P-type and N-type electrodes(50a,50b), second P-type and N-type electrodes(50c,50d), and a separation part(70) for electrically separating the first P-type and N-type electrodes from the second P-type and N-type electrodes, wherein the plurality of light emitting cells are arranged on a substrate(10). The first P-type electrode of one of the light emitting cell array is electrically connected to the first N-type electrode of one of two light emitting cells adjacent to the first P-type electrode by first metal interconnections(300a), and the first N-type electrode of the one light emitting cell is electrically connected to the first P-type electrode of the other one of the light emitting cells adjacent to the first N-type electrode by the first metal interconnections. The second P-type electrode of one of the light emitting cell array is electrically connected to the second N-type electrode of one of two light emitting cells adjacent to the second P-type electrode by second metal interconnections(300b), and the second N-type electrode of the one light emitting cell is electrically connected to the second P-type electrode of the other one of the light emitting cells adjacent to the second N-type electrode.

Description

Light emitting diode that operates regardless of the polarity of power and its manufacturing method {light emitting diode that operates regardless of the polarity of the power source and the method for fabricating the same}

1 is a plan view of a light emitting diode according to an embodiment of the present invention.

FIG. 2 is a partial cross-sectional view taken along the line AA ′ of FIG. 1 to illustrate a light emitting diode according to an embodiment of the present invention.

3 is a partial cross-sectional view taken along the line BB ′ of FIG. 1 to illustrate a light emitting diode according to an embodiment of the present invention.

4A to 4C are plan views illustrating the structure of metal wires according to an exemplary embodiment of the present invention.

5 to 7B are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

8 is a plan view of a light emitting diode according to another embodiment of the present invention.

FIG. 9 is a partial cross-sectional view taken along the line C-C ′ of FIG. 8 to illustrate a light emitting diode according to another embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

1: light emitting diode 10: substrate

20: buffer layer 30: semiconductor layers

31: N-type semiconductor layer 32: active layer

33: P-type semiconductor layer 40: transparent electrode layer

45,90: reflective metal layers 50a, 50b: first N-type and P-type electrodes

50c and 50d: second N-type and P-type electrodes 60a and 60b: first and second electrode pads

70: separator 80: insulating layer

100a and 100b: first and second bonding pads 200: light emitting cells

300a and 300b: first and second metal wires 400: metal bumps

The present invention relates to a light emitting diode that operates irrespective of the power supply polarity and a method of manufacturing the same, and particularly, to complement the metal wiring configuration between the light emitting cells of the light emitting diode, regardless of the polarity of the power applied to only one light emitting cell array connected in series. The present invention relates to a light emitting diode and a method of manufacturing the light emitting diode having improved space utilization efficiency.

A light emitting diode is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other, and emit light by recombination of electrons and holes. Such light emitting diodes are widely used as display devices and backlights. In addition, the light emitting diode consumes less power and has a longer lifespan than existing light bulbs or fluorescent lamps, thereby replacing its incandescent lamps and fluorescent lamps, thereby expanding its use area for general lighting.

The light emitting diode is repeatedly turned on and off in accordance with the direction of the current under AC power. Therefore, when the light emitting diode is directly connected to an AC power source, the light emitting diode does not emit light continuously and is easily damaged by reverse current.

In order to solve the problem of the light emitting diode, a light emitting diode which can be directly connected to a high voltage AC power source is disclosed in International Publication No. WO 2004/023568 (A1) "Light-Emitting Device Having Light-Emitting Component" (LIGHT-EMITTING DEVICE HAVING LIGHT- EMITTING ELEMENTS, which was disclosed by SAKAI et. Al.

According to WO 2004/023568 (A1), the LEDs form LED arrays two-dimensionally connected in series with metal wires on an insulating substrate such as a sapphire substrate. These two LED arrays are connected in anti-parallel on the substrate. As a result, the AC power supply causes the arrays to alternately turn on and off each other to emit light.

However, as disclosed in WO 2004/023568 (A1), there is a problem in that luminous efficiency per unit area of the light emitting diode is low because only one of the two LED arrays operates according to the polarity of the applied power.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems, and to improve the space utilization efficiency by emitting light irrespective of the polarity of the power applied to only one light emitting cell array connected in series by supplementing the metal wiring configuration between the light emitting cells of the light emitting diode. In providing a light emitting diode.

Another object of the present invention is to provide a method of manufacturing the light emitting diode.

According to one aspect of the present invention for achieving the above object, the first P-type and N-type electrode, the second P-type and N-type electrode, and the first P-type and N-type electrode, respectively, A light emitting cell array including a plurality of light emitting cells including a separator electrically separating the second P-type and N-type electrodes; Electrically connecting a first P-type electrode of one of the light emitting cells of the array of light emitting cells to a first N-type electrode of one of two light emitting cells adjacent thereto, and connecting the first N-type electrode of the one of the light emitting cells to First metal wires electrically connected to another first P-type electrode among adjacent light emitting cells; Electrically connecting a second P-type electrode of one of the light emitting cells of the array of light emitting cells to a second N-type electrode of one of two light emitting cells adjacent thereto and connecting the second N-type electrode of the one of the light emitting cells to it Second metal wires electrically connected to another second P-type electrode among adjacent light emitting cells; It is characterized in that the light emitting diode that operates regardless of the power supply polarity.

Bonding pads disposed on both sides of the light emitting cell array near both ends of the light emitting cell array; And third metal wires electrically connecting the bonding pads to the light emitting cells at both ends of the array.

More preferably, each of the light emitting cells includes an N-type semiconductor layer formed on a substrate; A P-type semiconductor layer located on a portion of the N-type semiconductor layer; An active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, wherein the first N-type electrode and the second N-type electrode are the N-type semiconductor layer, and the first P-type electrode and the second P-type electrode. The type electrode is located on the P-type semiconductor layer.

More preferably, the P-type semiconductor layer and the active layer are positioned on a portion of the N-type semiconductor layer so that both ends of the upper surface of the N-type semiconductor layer are exposed.

More preferably, further comprising first and second P-type electrode pads and first and second N-type electrode pads positioned on the first and second P-type electrodes and the first and second N-type electrodes, respectively. The first and second metal wires connect the first and second P-type electrode pads to the first and second N-type electrode pads, respectively.

More preferably, the insulating layer may further include an insulating layer formed by applying an insulating material to the portions of the light emitting cells except for the first and second electrode pads.

More preferably, the insulating layer is made of any one of SiO ₂ , Al ₂ O ₃ or Si ₃ N ₄ .

More preferably, the insulating layer has a thickness of λ / 4n.

More preferably, the first P-type electrode and the second P-type electrode are transparent electrodes.

More preferably, the separator is formed by etching the substrate to expose the upper surface of the light emitting cell.

More preferably, the first or second metal wiring is formed of any one of a straight line, a cross-beam type, and a tee (T) shape.

More preferably, a reflective metal layer positioned on each of the first and second P-type electrodes; It further includes a metal bumper formed on each of the reflective metal layers.

More preferably, the reflective metal layer is made of silver (Ag) or aluminum (Al).

More preferably, the reflective metal layer is formed of a multilayer film.

More preferably, further comprising first and second P-type electrode pads and first and second N-type electrode pads positioned on the first and second P-type electrodes and the first and second N-type electrodes, respectively. The first and second metal wires connect the first and second P-type electrode pads to the first and second N-type electrode pads, respectively, to the light emitting cell portion except for the first and second electrode pads. It further comprises an insulating layer formed by applying an insulating material.

More preferably, further comprising a reflective metal layer formed by applying a metallic material on the insulating layer.

More preferably, the first and second metal wires are formed by an air bridge or step cover process.

According to another aspect of the present invention for achieving the above object, the first P-type and N-type electrode, the second P-type and N-type electrode, and the first P-type and N-type electrode on the substrate respectively; Forming a light emitting cell array including a plurality of light emitting cells including a separator electrically separating the P-type and N-type electrodes, wherein the first P-type electrode of one of the light emitting cells of the light emitting cell array has two light emitting adjacent thereto A first metal electrically connecting to the first N-type electrode of one of the cells and electrically connecting the first N-type electrode of the one light emitting cell to the first P-type electrode of the other of the light emitting cells adjacent thereto; Forming interconnections, electrically connecting a second P-type electrode of one light emitting cell of the light emitting cell array to a second N-type electrode of one of two light emitting cells adjacent thereto, and a second of the one light emitting cell N-type electrode adjacent to the light emitting cells It is characterized in that it is a method of manufacturing a light emitting diode that operates irrespective of the polarity of the power supply, including forming second metal wires electrically connected to another second P-type electrode.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view of a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, the light emitting diode 1 according to the present invention includes a substrate 10, first and second bonding pads 100a and 100b, a plurality of light emitting cells 200, and first and second electrodes. Metal wires 300a and 300b.

The substrate 10 may be formed of a material such as sapphire or SiC having a higher thermal conductivity than sapphire, and a plurality of patterned light emitting cells 200 are formed on the substrate 10.

The first and second bonding pads 100a and 100b are pads for connecting the light emitting diode 1 to an external power source. The first and second bonding pads 100a and 100b may be connected to an external power source through bonding wires (not shown).

As shown in FIG. 1, the light emitting cells 200 are disposed in series between the first bonding pad 100a and the second bonding pad 100b to form an array of light emitting cells. The light emitting cell array includes a plurality of light emitting cells 200, and includes first and second N-type and P-type electrodes 50a and 50b and second N-type and P-type electrodes 50c formed in one light emitting cell. For example, 50d) is as follows. Each of the light emitting cells 200 has a structure in which an N-type semiconductor layer 31, an active layer 32, and a P-type semiconductor layer 33 are sequentially stacked. The active layer 32 is formed on a portion of the N-type semiconductor layer 31, and a P-type semiconductor layer 33 is formed on the active layer 32. Therefore, a portion of the upper surface of the N-type semiconductor layer 31 is bonded to the active layer 32, and the remaining portion of the upper surface of the N-type semiconductor layer 31 is exposed to the outside. Preferably, both end regions of the upper portion of the N-type semiconductor layer 31 are exposed in the light emitting cells 200.

In addition, the light emitting cell 200 is separated to perform the role of electrically separating the first P-type and N-type electrodes (50b, 50a) and the second P-type and N-type electrodes (50d, 50c) at its central portion It has a portion 70. Here, the N-type semiconductor layer 31 serves as N-type electrodes 50a and 50c, and P-type electrodes 50b and 50d are formed on the P-type semiconductor layer 33. The separation unit 70 may be formed by etching the substrate 10 from the top surface of the light emitting cell 200.

The first and second metal wires 300a and 300b electrically connect the light emitting cells 200.

In particular, the first metal wires 300a may include a first P-type electrode 50b of one of the light emitting cells 200 of the array of light emitting cells, and a first N type of one of two light emitting cells 200 adjacent thereto. Is electrically connected to the electrode 50a, and the first N-type electrode 50a of the one light emitting cell 200 is electrically connected to the first P-type electrode 50b of the other one of the light emitting cells 200 adjacent thereto. Connect with

In addition, the second metal wires 300b may include a second P-type electrode 50d of one of the light emitting cells 200 of the light emitting cell array, and a second N type of one of two light emitting cells 200 adjacent thereto. Is electrically connected to the electrode 50c, and the second N-type electrode 50c of the one light emitting cell 200 is electrically connected to the second P-type electrode 50d of the other one of the light emitting cells 200 adjacent thereto. Connect with

When forward power is applied to the light emitting diode 1, that is, when (+) power is applied to the first bonding pad 100a and (-) power is applied to the second bonding pad 100b, the A current flows along the first metal wires 300a to operate the light emitting cells 200. On the other hand, when reverse power is applied to the light emitting diode 1, that is, when (-) power is applied to the first bonding pad 100a and (+) power is applied to the second bonding pad 100b. The current flows along the second metal wires 300b to operate the light emitting cells 200. At this time, the separation unit 70 serves to electrically separate the first metal wires 300a and the second metal wires 300b.

FIG. 2 is a partial cross-sectional view taken along the line A-A 'of FIG. 1, and FIG. 3 is a partial cross-sectional view taken along the line B-B' of FIG.

Referring to FIGS. 2 and 3, the buffer layer 20 is positioned on the substrate 10, and the light emitting cells 200 spaced apart from each other are positioned on the buffer layer 20. The buffer layer 20 is used to mitigate the lattice mismatch between the semiconductor layers to be formed thereon and the substrate 10. When the substrate 10 is conductive, the buffer layer 20 is formed of the substrate ( 10) and an insulating material or semi-insulating material to electrically insulate the light emitting cells 200. Each of the light emitting cells 200 includes an N-type semiconductor layer 31, a P-type semiconductor layer 33 and a portion of the N-type semiconductor layer 31 positioned on a portion of the N-type semiconductor layer 31. An active layer 32 is interposed between the P-type semiconductor layers 33.

Here, the N-type semiconductor layer 31 serves as N-type electrodes 50a and 50c. Meanwhile, P-type electrodes 50b and 50d are formed on the P-type semiconductor layer 33. The P-type electrodes 50b and 50d may be transparent electrode layers 40 through which light can pass.

The light emitting cells 200 may be formed by forming each of the semiconductor layers 30 and the transparent electrode layer 40 on the substrate 10 and then patterning the same using a photolithography and an etching process.

A first electrode pad 60a may be formed on one region of the N-type semiconductor layer 31, and a second electrode may be formed on the transparent electrode layer 40 serving as the P-type electrodes 50b and 50d. Pad 60b may be formed. The electrode pads 60a and 60b may be formed at a desired position by using a lift-off method.

The metal wires 300a and 300b may be formed together using an air bridge or step cover process.

4A to 4C are plan views illustrating the structure of metal wires according to an exemplary embodiment of the present invention.

Referring to FIGS. 4A to 4C, the metal wires 300a and 300b may have various shapes. For example, the metal wires 300a and 300b may have a straight shape as shown in FIG. 4A, or a transverse shape as shown in FIG. 4B. It may be a tee (T) shape as shown in Figure 4c.

The larger the area where the metal wires 300a and 300b contact the electrodes 50a, 50b, 50c and 50d, the better the adhesive properties of the metal wires 300a and 300b and the lower the electrical resistance of the contact portion. Since light is not emitted through the contact portion, the luminous efficiency of the light emitting diode 1 is lowered. The light emitting diode 1 emits light emitted from the active layer 32 by recombination of electrons and holes through the P-type semiconductor layer 33 through the transparent electrode layer 40, and the N-type semiconductor layer. Light emitted through (31) is relatively insignificant.

Therefore, a portion of the metal wires 300a and 300b contacting the N-type semiconductor layer 31 serving as the N-type electrodes 50a and 50c is wide and the P-type electrodes 50b and 50d are in contact with each other. The portion in contact with the transparent electrode layer 40, which serves as an advantage, is advantageously narrow. In order to maximize the light emitting efficiency of the diode 1, as shown in FIG. 4A, all of the metal wires 300a and 300b may be installed in a straight line. On the other hand, when trying to improve the adhesion characteristics of the metal wiring (300a, 300b) and to lower the electrical resistance of the contact portion as shown in Figure 4b and 4c to contact the N-type electrode (50a, 50c) The metal wires 300a and 300b may have a cross-sectional shape or a tee shape, and the metal wires 300a and 300b contacting the P-type electrodes 50b and 50d may have a straight line shape. This is to block the light emitted through the P-type electrodes 50b and 50d and to improve the adhesive property of the metal wires 300a and 300b and to lower the electrical resistance of the contact portion.

5 to 7B are cross-sectional views illustrating a method of manufacturing a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 5, the buffer layer 20 is formed on the substrate 10, and the N-type semiconductor layer 31, the active layer 32, the P-type semiconductor layer 33, and the buffer layer 20 are formed on the buffer layer 20. The transparent electrode layers 40 are sequentially formed.

The buffer layer 20 and the semiconductor layers 30 may be formed using metal organic chemical vapor deposition (MOCVD), molecular beam growth (MBE) or vapor phase growth (HVPE). In addition, the semiconductor layers 30 may be continuously formed in the same process chamber. The buffer layer 20 may be formed of an insulating material film, such as an AlN or semi-insulating GaN layer, but may be formed of a conductive material film, for example, an N-type GaN layer.

The transparent electrode layer 40 may be a transparent electrode layer formed of Ni / Au or indium tin oxide (ITO).

Referring to FIG. 6, after the transparent electrode layer 40 is formed, an array of light emitting cells spaced apart from each other by patterning the semiconductor layers 30 and the transparent electrode layer 40 using a photolithography and an etching process. To form. Preferably, both end regions of the upper portion of the N-type semiconductor layer 31 are exposed in the light emitting cells 200.

Subsequently, a portion of the light emitting cells 200, and preferably a central portion thereof, are etched to expose the substrate 10 so that the first P-type and N-type electrodes 50b and 50a are exposed to the second P-type and Separators 70 are formed to electrically separate the N-type electrodes 50c and 50d.

Referring to FIGS. 7A and 7B, after the separation unit 70 is formed, first electrode pads 60a are formed on the exposed N-type semiconductor layer 31, and the transparent electrode layer 40 is formed. Second electrode pads 60b are formed on the substrate. At least one of the first and second electrode pads 60a and 60b is formed in each region electrically separated by the separator 70. Each of the electrode pads 60a and 60b may be formed using a lift off method.

Thereafter, an insulating material is applied to a portion of the light emitting cell 200 except for the first and second electrode pads 60a and 60b to form an insulating layer 80. The insulating material may be SiO ₂ , Al ₂ O _3, or Si ₃ N ₄ , and the thickness of the insulating layer 80 may be λ / 4n. Here, λ is the wavelength of light incident from the light emitting cell 200, and n is the refractive index of the insulating material. The refractive index of the insulating material is preferably 1.3 to 1.8.

The insulating layer 80 not only protects the light emitting cell 200 from external influences, but also increases the light transmittance of the light emitted from the light emitting cell 200 to increase the luminous efficiency of the light emitting diode 1. Perform.

After the insulating layer 80 is formed, metal wirings 300a and 300b are formed to electrically connect the light emitting cells 200 to the light emitting cells 200 or bonding pads 100a and 100b adjacent thereto.

In particular, the first P-type electrode 50b of one of the light emitting cells 200 of the light emitting cell array is electrically connected to the first N-type electrode 50a of one of the two light emitting cells 200 adjacent thereto. The first metal wire 300a electrically connects the first N-type electrode 50a of the one light emitting cell 200 to the other first P-type electrode 50b of the light emitting cells 200 adjacent thereto. ).

In addition, the second P-type electrode 50d of one of the light emitting cells 200 of the light emitting cell array is electrically connected to the second N-type electrode 50c of one of the two light emitting cells 200 adjacent thereto. And a second metal wire 300b electrically connecting the second N-type electrode 50c of the one light emitting cell 200 to the second P-type electrode 50d of the other one of the light emitting cells 200 adjacent thereto. ).

The metal wires 300a and 300b may be formed through an air bridge or step cover process, and the metal wires 300a and 300b may be formed in the same process.

8 is a plan view of a light emitting diode according to another embodiment of the present invention, and FIG. 9 is a partial cross-sectional view taken along the line C-C ′ of FIG. 8.

Since the light emitting diode according to another embodiment of the present invention is mostly the same as the light emitting diode 1 shown in Fig. 1, the difference will be described.

8 and 9, a reflective metal layer 45 is formed on each of the first and second P-type electrodes 50b and 50d. The reflective metal layer 45 may be formed of a single layer or a multilayer. The reflective metal layer 45 may be formed of silver (Ag) or aluminum (Al), for example, and barrier metal layers (not shown) are formed above and below the reflective metal layer 45 to prevent diffusion of silver or aluminum. Can be. The reflective metal layer 45 reflects light generated from the active layer 32 toward the substrate 10. Therefore, it is preferable that the substrate 10 is a light transmissive substrate.

As shown in FIG. 9, the second electrode pad 60b may be formed on the reflective metal layer 45 but may be omitted. Instead of forming the reflective metal layer 45, the first and second P-type electrodes 50b and 50d may be formed as reflective metal layers.

In addition, as shown in FIG. 9, the metal layer 90 may be formed by applying a metallic material, for example, silver or aluminum, to the insulating layer 80. The metal film 90 reflects light generated from the active layer 32 toward the substrate 10 to improve the luminous efficiency of the light emitting diode 1.

Meanwhile, the metal bumper 400 is formed on the reflective metal layer 45. The metal bumper 400 is bonded on a submount (not shown) to transfer heat generated in the light emitting cell 200.

The metal bumper 400 may have a circular cross section, an oval shape, a star shape, or a polygonal shape having a triangular shape or more.

According to the present embodiment, a flip chip type light emitting diode having metal bumpers 400 in thermal contact with a submount can be provided. Such a flip chip type light emitting diode can provide high light output due to its excellent heat dissipation efficiency.

In describing the present invention, a light emitting diode including a light emitting cell array having three light emitting cells has been described as an example. However, the number of the light emitting cells constituting the light emitting cell array is not limited.

The present invention is not limited to the embodiments described above, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.

According to the present invention as described above it can provide a light emitting diode having improved space utilization efficiency by emitting light irrespective of the polarity of the power applied to only one light emitting cell array connected in series by complementing the metal wiring configuration between the light emitting cells of the light emitting diode It works.

In addition, according to the present invention as described above there is an effect that can provide a method for manufacturing the light emitting diode.

Claims (34)

Aligned on a substrate and electrically separating the first P-type and N-type electrodes, the second P-type and N-type electrodes, and the first P-type and N-type electrodes from the second P-type and N-type electrodes, respectively. A light emitting cell array including a plurality of light emitting cells including a separator; Electrically connecting a first P-type electrode of one of the light emitting cells of the array of light emitting cells to a first N-type electrode of one of two light emitting cells adjacent thereto, and connecting the first N-type electrode of the one of the light emitting cells to First metal wires electrically connected to another first P-type electrode among adjacent light emitting cells; Electrically connecting a second P-type electrode of one of the light emitting cells of the array of light emitting cells to a second N-type electrode of one of two light emitting cells adjacent thereto and connecting the second N-type electrode of the one of the light emitting cells to it Second metal wires electrically connected to another second P-type electrode among adjacent light emitting cells; Light emitting diodes that operate regardless of the power supply polarity, characterized in that it comprises a. The method according to claim 1, Bonding pads disposed on both sides of the light emitting cell array near both ends of the light emitting cell array; And third metal wires electrically connecting the bonding pads to the light emitting cells at both ends of the array. The method according to claim 1, wherein each of the light emitting cells An N-type semiconductor layer formed on the substrate; A P-type semiconductor layer located on a portion of the N-type semiconductor layer; An active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, Wherein the first N-type electrode and the second N-type electrode are the N-type semiconductor layer, and the first P-type electrode and the second P-type electrode are located on the P-type semiconductor layer. Light emitting diode that works without. The light emitting device of claim 3, wherein the P-type semiconductor layer and the active layer are positioned on a portion of the N-type semiconductor layer so that both ends of the upper surface of the N-type semiconductor layer are exposed. diode. The method according to claim 3, Further comprising first and second P-type electrode pads and first and second N-type electrode pads positioned on the first and second P-type electrodes and the first and second N-type electrodes, respectively. And the first and second metal wires connect the first and second P-type electrode pads to the first and second N-type electrode pads, respectively. The light emitting diode of claim 5, further comprising an insulating layer formed by applying an insulating material to the light emitting cell portions except for the first and second electrode pads. The light emitting diode of claim 6, wherein the insulating layer is made of any one of SiO ₂ , Al ₂ O _3, and Si ₃ N ₄ . The light emitting diode of claim 6, wherein the insulating layer has a thickness of λ / 4n. (Λ is the wavelength of light incident from the light emitting cell, n is the refractive index of the insulating material) The light emitting diode of claim 1, wherein the first P-type electrode and the second P-type electrode are transparent electrodes. The light emitting diode of claim 1, wherein the separation part is formed by etching the substrate to expose the substrate from an upper surface of the light emitting cell. The light emitting diode of claim 1, wherein the first or second metal wiring is formed of any one of a straight line, a cross-beam type, and a tee shape. The semiconductor device of claim 1, further comprising: reflective metal layers positioned on the first and second P-type electrodes; Metal bumpers formed on the reflective metal layers; Light emitting diodes that operate regardless of the power supply polarity, further comprising. The light emitting diode of claim 12, wherein the reflective metal layer is formed of silver (Ag) or aluminum (Al). The light emitting diode of claim 12, wherein the reflective metal layer is formed of a multilayer film. The method of claim 12, further comprising first and second P-type electrode pads and first and second N-type electrode pads positioned on the first and second P-type electrodes and the first and second N-type electrodes, respectively. The first and second metal wires connect the first and second P-type electrode pads to the first and second N-type electrode pads, respectively. And an insulating layer formed by coating an insulating material on the light emitting cell portions except for the first and second electrode pads. The light emitting diode of claim 15, further comprising a reflective metal layer formed by applying a metallic material on the insulating layer. The light emitting diode of claim 1, wherein the first and second metal wires are formed by an air bridge or step cover process. A separator for electrically separating the first P-type and N-type electrodes, the second P-type and N-type electrodes, and the first P-type and N-type electrodes from the second P-type and N-type electrodes, respectively, on the substrate. To form a light emitting cell array comprising a plurality of light emitting cells, Electrically connecting a first P-type electrode of one of the light emitting cells of the array of light emitting cells to a first N-type electrode of one of two light emitting cells adjacent thereto, and connecting the first N-type electrode of the one of the light emitting cells to Forming first metal wires electrically connected to the first P-type electrode of another adjacent light emitting cell; Electrically connecting a second P-type electrode of one of the light emitting cells of the array of light emitting cells to a second N-type electrode of one of two light emitting cells adjacent thereto and connecting the second N-type electrode of the one of the light emitting cells to it And forming second metal wires electrically connected to another second P-type electrode among adjacent light emitting cells. The method according to claim 18, Forming bonding pads on the substrate, the bonding pads being disposed near both ends of the light emitting cell array; And forming third metal wires electrically connecting the bonding pads to the light emitting cells at both ends of the array. The method according to claim 18, wherein each of the light emitting cells An N-type semiconductor layer formed on the substrate; A P-type semiconductor layer located on a portion of the N-type semiconductor layer; An active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, Wherein the first N-type electrode and the second N-type electrode are the N-type semiconductor layer, and the first P-type electrode and the second P-type electrode are located on the P-type semiconductor layer. Method for manufacturing a light emitting diode that works without. 21. The light emitting device according to claim 20, wherein the P-type semiconductor layer and the active layer are positioned on a portion of the N-type semiconductor layer so that both ends of an upper surface of the N-type semiconductor layer are exposed. Diode manufacturing method. The method of claim 20, The method may further include forming first and second P-type electrode pads and first and second N-type electrode pads positioned on the first and second P-type electrodes and the first and second N-type electrodes, respectively. And the first and second metal wires connect the first and second P-type electrode pads to the first and second N-type electrode pads, respectively. 23. The method of claim 22, further comprising forming an insulating layer by applying an insulating material to portions of the light emitting cells except for the first and second electrode pads. The method of claim 22, wherein the insulating layer is made of any one of SiO ₂ , Al ₂ O _3, or Si ₃ N ₄ . The method of claim 22, wherein the insulating layer has a thickness of λ / 4n. (Λ is the wavelength of light incident from the light emitting cell, n is the refractive index of the insulating material) The method of claim 18, wherein the first P-type electrode and the second P-type electrode are transparent electrodes. The method of claim 18, wherein the separation unit is formed by etching the substrate to expose the substrate from an upper surface of the light emitting cell. The method of claim 18, wherein the first or second metal wiring is formed of any one of a straight, a transverse, and a tee (T) shape. The method according to claim 18, Forming a reflective metal layer located on each of the first and second P-type electrode, And forming a metal bumper formed on each of said reflective metal layers. 30. The method of claim 29, wherein the reflective metal layer is composed of silver (Ag) or aluminum (Al). 30. The method of claim 29, wherein the reflective metal layer is formed of a multilayer film. 30. The method of claim 29, further comprising first and second P-type electrode pads and first and second N-type electrode pads positioned on the first and second P-type electrodes and the first and second N-type electrodes, respectively. The first and second metal wires connect the first and second P-type electrode pads to the first and second N-type electrode pads, respectively. The method of claim 1, further comprising forming an insulating layer by applying an insulating material to the portion of the light emitting cell except for the first and second electrode pads. 33. The method of claim 32, further comprising forming a reflective metal layer by applying a metallic material on the insulating layer. 19. The method of claim 18, wherein the first and second metal wires are formed by an air bridge or step cover process.

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