KR100626264B1 - 조명광학계 및 노광장치 - Google Patents

조명광학계 및 노광장치 Download PDF

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Publication number
KR100626264B1
KR100626264B1 KR20040074099A KR20040074099A KR100626264B1 KR 100626264 B1 KR100626264 B1 KR 100626264B1 KR 20040074099 A KR20040074099 A KR 20040074099A KR 20040074099 A KR20040074099 A KR 20040074099A KR 100626264 B1 KR100626264 B1 KR 100626264B1
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KR
South Korea
Prior art keywords
mirror
optical system
light
illumination optical
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR20040074099A
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English (en)
Korean (ko)
Other versions
KR20050028793A (ko
Inventor
쯔지도시히코
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20050028793A publication Critical patent/KR20050028793A/ko
Application granted granted Critical
Publication of KR100626264B1 publication Critical patent/KR100626264B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR20040074099A 2003-09-17 2004-09-16 조명광학계 및 노광장치 Expired - Fee Related KR100626264B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00324636 2003-09-17
JP2003324636A JP4378140B2 (ja) 2003-09-17 2003-09-17 照明光学系及び露光装置

Publications (2)

Publication Number Publication Date
KR20050028793A KR20050028793A (ko) 2005-03-23
KR100626264B1 true KR100626264B1 (ko) 2006-09-21

Family

ID=34191310

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20040074099A Expired - Fee Related KR100626264B1 (ko) 2003-09-17 2004-09-16 조명광학계 및 노광장치

Country Status (4)

Country Link
EP (1) EP1517338A3 (enExample)
JP (1) JP4378140B2 (enExample)
KR (1) KR100626264B1 (enExample)
TW (1) TWI247338B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303370A (ja) * 2005-04-25 2006-11-02 Canon Inc 露光装置及びそれを用いたデバイス製造方法
JP2007242775A (ja) * 2006-03-07 2007-09-20 Canon Inc 露光装置及びデバイス製造方法
JP4986754B2 (ja) * 2007-07-27 2012-07-25 キヤノン株式会社 照明光学系及びそれを有する露光装置
US8081296B2 (en) * 2007-08-09 2011-12-20 Nikon Corporation Illumination optical apparatus, exposure apparatus, and device manufacturing method
DE102010041623A1 (de) 2010-09-29 2012-03-29 Carl Zeiss Smt Gmbh Spiegel
CN113412434B (zh) * 2019-02-14 2025-02-11 索尼半导体解决方案公司 光源单元、光源装置和距离测量装置
CN116699791A (zh) * 2023-08-01 2023-09-05 长春长光智欧科技有限公司 一种主动冷却椭球反射镜及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4655592A (en) * 1983-12-30 1987-04-07 Hamamatsu Systems, Inc. Particle detection method and apparatus
JPH0776745B2 (ja) * 1989-11-03 1995-08-16 株式会社堀場製作所 顕微分光測定装置
US5737137A (en) * 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
JP4238390B2 (ja) * 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
US6186632B1 (en) * 1998-12-31 2001-02-13 The Regents Of The University Of California Condenser for ring-field deep-ultraviolet and extreme-ultraviolet lithography
US7248667B2 (en) * 1999-05-04 2007-07-24 Carl Zeiss Smt Ag Illumination system with a grating element
JP2000349009A (ja) * 1999-06-04 2000-12-15 Nikon Corp 露光方法及び装置

Also Published As

Publication number Publication date
JP4378140B2 (ja) 2009-12-02
TWI247338B (en) 2006-01-11
TW200512804A (en) 2005-04-01
KR20050028793A (ko) 2005-03-23
JP2005093692A (ja) 2005-04-07
EP1517338A3 (en) 2009-05-27
EP1517338A2 (en) 2005-03-23

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