KR100618905B1 - System for removing static electricity and system for taping process by using the same - Google Patents

Abstract

The present invention provides a static elimination system for a taping process that can suppress the inflow of foreign matter into the equipment and can eliminate static electricity without generating vortex of air in the equipment. The present invention comprises a first ionizer for ionizing ambient air to provide ions on a conveyed wafer; A vibration damper including one or more nozzles for high-speed injection of compressed gas onto the wafer passing through the first ionizer to desorb foreign matter on the wafer; A gas exhaust device for collecting and discharging the foreign matter desorbed from the wafer; And a second ionizer for ionizing ambient air on the wafer passed through the vibration damper to provide ions.

Wafer back polishing device, static elimination system, triboelectric charging, exfoliation charging, air ionizer, high voltage electrostatic precipitating filter

Description

System for removing static electricity and system for taping process by using the same}

1 is a view schematically showing a conventional blower type ionizer.

2A and 2B are schematic diagrams illustrating an inflow form of foreign matter contaminating a wafer during a taping process.

3 is a view schematically showing a static elimination system for a taping process according to the present invention.

4 is a detailed view of an ionizer according to the present invention.

5A and 5B are diagrams schematically showing causes of generation of static electricity generated in the tape laminator and the tape remover, respectively.

6A and 6B are diagrams schematically illustrating performing the taping process by binding the electrostatic elimination system and the conventional taping process system of the present invention, respectively.

Explanation of symbols on the main parts of the drawings

100 wafer 200 first ionizer

300: vibration damper 400: second ionizer

500: dust collecting filter 600: gas exhaust device

700: exhaust fan

The present invention relates to an apparatus for manufacturing a semiconductor device, and more particularly, to an electrostatic elimination system for a taping process and a taping process system using the same.

Recently, with the trend toward miniaturization of electronic products, efforts have been made to reduce the thickness of semiconductor packages. As one method of reducing the thickness of a semiconductor product package, a process of polishing the back side of a semiconductor chip has been adopted. Generally, the wafer backside polishing process is performed before the assembly process on a wafer basis.

The polishing step of the back surface of the wafer comprises a step of adhering the antifouling tape to the front surface of the wafer, a step of polishing the back side of the wafer to which the antifouling tape is adhered, and a step of removing the antifouling tape from the polished wafer. The anti-fouling tape, which prevents adhesion of foreign matters during the wafer backside polishing process, is made of a polymer-based material and thus has a lot of static electricity on the surface during the process. Such static electricity may cause adhesion of foreign substances due to static electricity, fire of flammable materials due to electrostatic discharge, personal injury of workers due to electric shock, damage of precision electronic components such as semiconductor devices, and malfunction of equipment even in a subsequent packaging process step. Can be. Therefore, efforts are needed to remove static electricity from the anti-fouling tape.

In general, in the semiconductor device manufacturing process, an air ionizer (referred to as an air ionizer or an ionizer) is used to remove static electricity. Air ionizers generate cations and anions alternately at regular intervals and release them into the surrounding air. The released ions provide electricity that is opposite to the charged particles attached to the surface of an object such as a wafer to neutralize the charged particles. That is, the air ionizer uses air as the charge carrier to provide positive and negative ions that limit static electricity, thereby creating an electrostatic dissipative environment in the surroundings.

BACKGROUND ART Conventional air ionizers for the semiconductor manufacturing industry include a fan type coupled with a fan and a bar type for supplying ions using compressed air.

1 is a view schematically showing a conventional blower type ionizer.

Referring to FIG. 1, a conventional ionizer 200c includes a housing 24 having an inlet and an outlet 22a, 22b, a high voltage source 21, an electrode 23, and an inlet 22a. ) And an air mover 25 for introducing air into the shell and for discharging air containing ions at a predetermined flow rate through the outlet 22b around the electrode 23. The air mover 25 may be a fan, for example. The air mover 25 can supply ions to a relatively long distance. In addition, the high-speed air generated by the air mover 25 has the advantage that the dust attached to the surface of the object can be removed.

 Therefore, the ionizer 200c having the conventional air mover 25 has been frequently used in semiconductor manufacturing facilities due to the advantage of being able to be disposed remotely from a place to remove static electricity and the desorption force of dust. However, in the case of using a conventional ionizer in the taping process system, not only the foreign matters are introduced into the facility, but also there is a problem that foreign matters are suspended by forming a vortex of air inside the facility due to the high speed air. . As a result, foreign matter may adhere to the surface of the wafer as a contamination source.

2A and 2B are schematic diagrams illustrating an inflow form of foreign matter contaminating a wafer during a taping process. Referring to FIG. 2A, the wafer is contaminated before the process of adhering the antifouling tape 10. Referring to FIG. 2B, the wafer is contaminated after the process of adhering the antifouling tape 10. Foreign matter adhering to the wafer surface in the process of attaching the anti-fouling tape may not only cause defects in the performance of semiconductor devices but also may cause wafer cracking.

Therefore, the technical problem to be achieved by the present invention is to provide an electrostatic removal system for a taping process that can suppress the inflow of foreign substances into the equipment and can remove the static electricity without generating a vortex of air in the equipment.

In addition, another technical problem to be achieved by the present invention is a reliable taping process that suppresses the introduction of foreign matter into the equipment and eliminates static electricity without generating air vortex inside the equipment, thereby improving device defects and wafer damage problems. To provide a system.

According to an aspect of the present invention, there is provided a static electricity removing system for a taping process, the first ionizing device providing ions on a wafer to be transported by ionizing ambient air; A vibration damper including one or more nozzles for high-speed injection of compressed gas onto the wafer passing through the first ionizer to desorb foreign matter on the wafer; A gas exhaust device for collecting and discharging the foreign matter desorbed from the wafer; And a second ionizer for ionizing ambient air on the wafer passed through the vibration damper to provide ions.

Preferably, the first ionizer may periodically generate cations and anions. In addition, the first ionizer includes a housing having an inlet through which air is introduced and an outlet through which air is discharged; A high voltage source, which is a power source for discharging the air; And one or more electrodes electrically connected to the high voltage source and having a distal end including a cue to induce discharge of the air, wherein the air introduced into the housing through the inlet is It is ionized through the periphery and diffuses with the ions through the outlet to the periphery outside the housing.

Similarly, the second ionizer is capable of generating positive and negative ions periodically. In addition, a housing having an inlet through which air is introduced and an outlet through which air is discharged; A high voltage source that is a power source; And one or more electrodes electrically connected to the high voltage source and having a distal end including a cusp to induce discharge, wherein air introduced into the housing through the inlet passes around the electrode. It is ionized and diffuses with the ions through the outlet to the periphery outside the housing.

The gas exhaust device may include a dust collecting filter or an exhaust fan. Preferably, the dust collecting filter may be an electrostatic dust collecting filter.

In addition, the taping processing system according to the present invention for achieving the above another technical problem is a tape laminator or tape remover for attaching or detaching the anti-fouling tape on the wafer, in the taping processing system, the electrostatic removal system of the present invention It is bound to the wafer introduction portion of the taping process system, and performs a wafer dust removal process.

In addition, the taping processing system according to the present invention is a tape laminating or tape remover for attaching or detaching a tape for preventing contamination to a wafer, wherein the static electricity removing system of the present invention is a wafer discharge part of the taping processing system. Bound to the wafer to perform a dust removal process of the wafer.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art, and the following examples can be modified in various other forms, and the scope of the present invention is It is not limited to an Example. In addition, the size of regions in the drawings is exaggerated for clarity.

3 is a view schematically showing a static elimination system for the taping process according to the present invention.

Referring to FIG. 3, the wafer 100 moves in the direction of the arrow, and the wafer 100 is moved by the first ionizer 200, the vibration isolator 300, and the second ionizer 400 in the static elimination system 800. The static electricity and adsorbed foreign matter on) are sequentially removed. The first ionizer 200 ionizes ambient air in the static elimination system 800 to provide ions on the introduced wafer 100. Preferably, the first ionizer 200 may periodically generate cations and anions. The static electricity on the wafer 100 may be neutralized by the ions provided from the first ionizer 200. As a result, the foreign matter present on the wafer 100 from which static electricity has been removed is more easily removed.

Next, the wafer 200 that has passed through the first ionizer 200 passes through the vibration isolator 300. The vibration isolator 300 sprays compressed gas such as air, nitrogen, and argon on the wafer 100 at high speed to desorb foreign matter on the wafer 100 from the surface of the wafer 100. Preferably, the nozzle of the vibration damper is a spot type high speed jet nozzle capable of removing foreign matter locally on the wafer. Compressed gas is provided through one or more nozzles 301 disposed on the wafer. Preferably, the compressed gas may contain cations and anions.

Providing the compressed gas by the vibration suppression device 300 may cause local air vortex and float the foreign matter in the static elimination system 800. Floating foreign matter may be attached to the first ionizer 200, the vibration isolator 300, and the second ionizer 400 in the static elimination system 800, and may cause secondary contamination of the wafer. Should be removed. Therefore, the gas exhaust device 600 collects and discharges the foreign matter desorbed from the wafer 100 by the vibration suppression device 300 and releases the increased pressure in the electrostatic discharge system 800 by the injected compressed gas. .

The gas exhaust device 600 may include a dust collecting filter 500 or an exhaust fan 700 to collect and discharge foreign substances. Since the foreign matter in the semiconductor equipment is very fine particles, a filter having a corresponding collection capability is required. Preferably, the dust collecting filter 500 is a high voltage electrostatic precipitator. The high voltage electrostatic precipitating filter 500 used in the present invention is a conventional commercialized filter, and is an electrostatic precipitating filter that maximizes the collection capability by charging dust particles by moving them to the surface of the collecting electrode using high voltage discharge. When the charged foreign matter particles adhere to the surface of the dust collecting electrode to form a layer having a constant thickness, it should be periodically removed. In addition, the exhaust fan 700 of the present invention suppresses the increase in pressure and the generation of vortices due to the compressed gas injected by the vibration isolator 300.

Next, the wafer 100 passing through the vibration damper 300 passes through the second ionizer 400. The second ionizer 400 removes residual static electricity not removed by the first ionizer 200 and the vibration suppression apparatus 300. The second ionizer 400, like the first ionizer 200, ionizes ambient air in the static elimination system 800 to provide ions on the wafer 100. Preferably, the second ionizer 400 may periodically generate cations and anions.

 4 is a detailed view of an ionizer according to the present invention.

Referring to FIG. 4, the first ionizer 200 and the second ionizer 400 of the present invention include a housing having an inlet 202a through which ambient air is introduced and an outlet 202b through which air is discharged. 204); A high voltage source 201, which is a power source for discharging air; And one or more electrodes 203 electrically connected to the high voltage source 201 and having a distal end including a cue to induce discharge of air. Unlike the conventional ionizer (200c of FIG. 1), the first ionizer 200 and the second ionizer 400 of the present invention do not include an air mover (25 of FIG. 1). In the first ionizer 200 and the second ionizer of the present invention, air introduced into the housing through the inlet 202a is ionized around the electrode 203, and the air together with the ions causes the outlet 202b to exit. It is discharged to the periphery outside the housing 204 by diffusion through. That is, ions are discharged through the outlet 202b of the housing due to the difference in ion concentration inside the housing 204 and outside the housing 204.

Therefore, in the ionizers 200 and 400 of the present invention, it is preferable to increase the power of the high voltage source 201 or increase the electrode 203 to increase the ionization rate. In addition, since the ions are discharged by the diffusion of the ionizers 200 and 400 of the present invention, the wafer should be disposed at a short distance compared to the conventional ionizer (200c in FIG. 1).

As a result, the present invention can provide a clean electrostatic dissipative environment in which foreign matter does not flow into the antistatic system, unlike the conventional ionizer having a conventional air mover, and vortex is excluded.

5A and 5B are diagrams schematically showing causes of generation of static electricity generated in the tape laminator and the tape remover, respectively.

Referring to FIG. 5A, adhesion and friction between the rotary roller 901 and the antifouling tape 902, which is an insulating film on the wafer 100, are essential in the antifouling tape attachment process for backside polishing of the wafer. In the attachment process of the anti-fouling tape, the contact position between the rotary roller 901 and the anti-fouling tape 902 is moved and rubbed to generate static electricity while the charged particles are distributed on the anti-fouling tape surface. This charging phenomenon is called frictional charging. In addition, referring to FIG. 5B, as the anti-contamination tapes 902 which are in close contact with each other are peeled from the wafer 100, charges may be separated to generate static electricity. This charging phenomenon is called peeling charging.

As described below, in order to reduce the electrostatic charging caused by the frictional and peeling charging accompanying the taping process, the static electricity removing system of the present invention can be applied.

6A and 6B are schematic views illustrating a method of performing a taping process by combining an electrostatic elimination system and a tape laminator or a tape remover of the present invention, respectively.

Referring to FIG. 6A, the wafer 100 is first introduced into the first static elimination system 800a of the present invention to remove static electricity and foreign matter on the wafer 100. As a result, the wafer 100 may provide an attachment surface for attaching the anti-fouling tape free of static electricity and foreign matter.

The wafer 100 that has passed through the first static elimination system 800a is introduced into the tape laminator 900a by a suitable wafer transfer device 50. The tape laminator 900a compresses the anti-pollution tape 902 to the roller 90 on the vibration damped wafer 100. In the tapered wafer 100, the surface of the tape 902 may be charged by frictional charging by a roller. Thus, a suitable wafer transfer device 50 introduces the wafer 100 into the second static elimination system 800b to remove static electricity. The second static elimination system 800b removes static and foreign matter present on the tape surface on the wafer 100. As a result, the wafer 100 has no static and foreign matter on the interface between the wafer and the tape and the surface of the tape.

6B, the same effect can be obtained by applying the electrostatic elimination system of the present invention similarly to the tape laminator of FIG. 6A.

Referring to FIG. 6B, when the tape remover 900b removes the tape 902 from the wafer 100, the tape remover 900b may induce static electricity and foreign matter on the surface of the wafer 100 by peeling charging. However, the static electricity and foreign matters of the wafer may be removed by the static elimination systems 800a and 800b of the present invention.

As a result, the present invention can eliminate device defects or wafer damage caused by static electricity and foreign matter in the conventional taping process, thereby providing a more reliable semiconductor device and its manufacturing process.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and alterations are possible within the scope without departing from the technical spirit of the present invention, which are common in the art. It will be apparent to those who have knowledge.

As described above, the static electricity removing system of the present invention includes a diffusion type static electricity removing device capable of removing static electricity and foreign matter on the wafer surface, thereby preventing foreign matter from entering into the static electricity prevention system, and eliminating vortex phenomena to clean static electricity. It can provide an electrostatic dissipative environment.

In addition, in the taping process system of the present invention, by binding the static elimination system according to the present invention to remove the static electricity and foreign matter on the wafer surface induced by frictional or peeling charging during the taping process, device defects or wafer damage is eliminated A more reliable semiconductor device and its manufacturing process can be provided.

Claims (20)

A first ionizer for ionizing ambient air to provide ions on the wafer to be transported; A vibration damper including one or more nozzles for high-speed injection of compressed gas onto the wafer passing through the first ionizer to desorb foreign matter on the wafer; A gas exhaust device for collecting and discharging the foreign matter desorbed from the wafer; And   And a second ionizer for ionizing ambient air on the wafer passing through the vibration damper to provide ions. The method of claim 1, Wherein said first ionizer generates positive and negative ions periodically. The method of claim 1, Wherein said second ionizer generates positive and negative ions periodically. The method of claim 1, The first ionizer, A housing having an inlet through which air is introduced and an outlet through which air is discharged; A high voltage source, which is a power source for discharging the air; And One or more electrodes electrically connected to the high voltage source and having a distal end including a cue to induce discharge of the air, The air introduced into the housing through the inlet is ionized around the electrode and diffuses with the ions through the outlet to the outside of the housing. The method of claim 1, The second ionizer, A housing having an inlet through which air is introduced and an outlet through which air is discharged; A high voltage source, which is a power source for discharging the air; And One or more electrodes electrically connected to the high voltage source and having a distal end including a cue to induce discharge of the air, The air introduced into the housing through the inlet is ionized around the electrode and diffuses with the ions through the outlet to the outside of the housing. The method of claim 1, The nozzle of the vibration isolator is a static discharge system, characterized in that the spot-type high-speed jet nozzle that can remove the foreign matter on the wafer locally The method of claim 1, Wherein said compressed gas of said vibration damping device contains positive and negative ions. The method of claim 1, The gas exhaust device is electrostatic removal system, characterized in that it comprises a dust filter. The method of claim 8, The dust collecting filter is a high voltage electrostatic precipitator. The method of claim 1, The gas exhaust device comprises an exhaust fan (exhaust fan) characterized in that the static elimination system. In a taping process system, which is a tape laminator or a tape remover for attaching or detaching an antifouling tape to a wafer, respectively. A taping process system according to claim 1, wherein an electrostatic elimination system for a taping process as described in claim 1 is bound to a wafer introduction portion of the taping process system to perform a dust removing process of the introduced wafer. In a taping process system, which is a tape laminator or a tape remover for attaching or detaching an antifouling tape to a wafer, respectively. The taping processing system according to claim 1, wherein the static elimination system for the taping process according to claim 1 is bound to a wafer discharge part of the taping processing system to perform a dust removing process of the discharged wafer. The method according to claim 11 or 12, And wherein said first ionizer periodically generates positive and negative ions. The method according to claim 11 or 12, And wherein said second ionizer generates positive and negative ions periodically. The method according to claim 11 or 12, The first ionizer, A housing having an inlet through which air is introduced and an outlet through which air is discharged; A high voltage source, which is a power source for discharging the air; And One or more electrodes electrically connected to the high voltage source and having a distal end including a cue to induce discharge of the air, The air introduced into the housing through the inlet is ionized around the electrode and diffuses along with the ions to the outside of the housing through the outlet. The method according to claim 11 or 12, The second ionizer, A housing having an inlet through which air is introduced and an outlet through which air is discharged; A high voltage source, which is a power source for discharging the air; And One or more electrodes electrically connected to the high voltage source and having a distal end including a cue to induce discharge of the air, The air introduced into the housing through the inlet is warmed around the electrode and diffuses along with the ions to the outside of the housing through the outlet. The method according to claim 11 or 12, Taping process system, characterized in that the compressed gas of the vibration damper contains a cation and an anion. The method according to claim 11 or 12, The gas exhaust device is a taping process system, characterized in that it comprises a dust collecting filter. The method of claim 18, And wherein the dust collecting filter is a high voltage electrostatic precipitator. The method according to claim 11 or 12, And said gas exhaust device comprises an exhaust fan.

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