KR100574261B1 - 배선기판, 전자장치, 전기광학장치, 및 전자기기 - Google Patents
배선기판, 전자장치, 전기광학장치, 및 전자기기 Download PDFInfo
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- KR100574261B1 KR100574261B1 KR1020030017440A KR20030017440A KR100574261B1 KR 100574261 B1 KR100574261 B1 KR 100574261B1 KR 1020030017440 A KR1020030017440 A KR 1020030017440A KR 20030017440 A KR20030017440 A KR 20030017440A KR 100574261 B1 KR100574261 B1 KR 100574261B1
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- insulating film
- substrate
- film
- dielectric constant
- electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0187—Dielectric layers with regions of different dielectrics in the same layer, e.g. in a printed capacitor for locally changing the dielectric properties
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (51)
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- 기판과,상기 기판의 위쪽에 배치된 능동소자와,상기 능동소자를 구동하는 전기적 신호 또는 구동 전력을 공급하는 배선 또는 전극과,제1 절연막을 포함하고,상기 제1 절연막은 상기 배선 또는 전극과 상기 능동소자와의 사이에 배치되며,상기 제1 절연막의 비유전율은 상기 기판의 비유전율보다 낮은 것을 특징으로 하는 배선기판.
- 기판과,상기 기판의 위쪽에 배치된 능동소자와,상기 능동소자를 구동하는 전기적 신호 또는 구동 전력을 공급하는 배선과,제1 절연막과,제2 절연막을 포함하고,상기 제1 절연막은 상기 제2 절연막과 상기 기판과의 사이에 배치되며,상기 제1 절연막의 비유전율은 상기 기판의 비유전율보다 낮은 것을 특징으로 하는 배선기판.
- 제22 항에 있어서,상기 제1 절연막과 상기 제2 절연막은 접해 있는 것을 특징으로 하는 배선기판.
- 제22 항에 있어서,상기 제2 절연막은 상기 능동소자를 덮고 있는 것을 특징으로 하는 배선기판.
- 기판과,상기 기판의 위쪽에 배치된 능동소자와,상기 능동소자를 구동하는 전기적 신호 또는 구동 전력을 공급하는 배선 또는 전극과,제1 절연막과,제3 절연막을 포함하고,상기 제3 절연막은 상기 제1 절연막과 상기 기판과의 사이에 배치되며,상기 제1 절연막의 비유전율은 상기 기판의 비유전율보다 낮은 것을 특징으로 하는 배선기판.
- 제21 항, 제22 항 및 제25 항 중 어느 한 항에 있어서,상기 능동소자에 접속된 화소전극을 더 구비하고 있는 것을 특징으로 하는 배선기판.
- 제25 항에 있어서,상기 제3 절연막은 상기 능동소자를 덮고 있는 것을 특징으로 하는 배선기판.
- 기판과,상기 기판의 위쪽에 배치된 능동소자와,상기 능동소자를 구동하는 전기적 신호 또는 구동 전력을 공급하는 배선 또는 전극과,제1 절연막을 포함하고,상기 제1 절연막은 다공질 재료로 이루어지는 것을 특징으로 하는 배선기판.
- 기판과,상기 기판의 위쪽에 배치된 능동소자와,상기 능동소자를 구동하는 전기적 신호 또는 구동 전력을 공급하는 배선 또는 전극과,제1 절연막과,상기 능동소자에 접속된 화소전극을 포함하고,상기 제1 절연막은 상기 배선 또는 전극과 상기 능동소자와의 사이에 배치되며,상기 제1 절연막은 상기 화소전극의 주위에 배치되고,상기 제1 절연막의 비유전율은 상기 기판의 비유전율보다 낮은 것을 특징으로 하는 배선기판.
- 제21 항, 제22 항, 제25 항, 제28 항 및 제29 항 중 어느 한 항에 있어서,상기 제1 절연막은 실리카 유리, 알킬실록산폴리머, 알킬실세스키옥산폴리머, 수소화 알킬실세스키옥산폴리머, 폴리아릴에테르 중 어느 하나를 포함하는 스핀 온 글래스막, 다이아몬드막, 및 불소화 아몰퍼스 탄소막 중 적어도 하나를 포함하는 것을 특징으로 하는 배선기판.
- 제21 항, 제22 항, 제25 항 및 제29 항 중 어느 한 항에 있어서,상기 제1 절연막은 다공질 재료로 이루어지는 것을 특징으로 하는 배선기판.
- 제21 항, 제22 항, 제25 항, 제28 항 및 제29 항 중 어느 한 항에 있어서,상기 제1 절연막은 에어로 겔, 다공질 실리카, 불화마그네슘의 미립자를 분산한 겔, 불소계 폴리머, 다공성 폴리머, 및 소정의 재료에 미립자를 함유시킨 것 중 적어도 하나를 포함하는 것을 특징으로 하는 배선기판.
- 제29 항에 있어서,상기 제1 절연막의 적어도 일부를 덮는 보호막을 더 구비하는 것을 특징으로 하는 배선기판.
- 제29 항 또는 제33 항에 있어서,상기 제1 절연막의 적어도 일부는 배리어층에 의해 덮여 있는 것을 특징으로 하는 배선기판.
- 제21 항, 제22 항, 제25 항, 제28 항 및 제29 항 중 어느 한 항에 있어서,상기 제1 절연막의 비유전율이 3 이하인 것을 특징으로 하는 배선기판.
- 제21 항, 제22 항, 제25 항, 제28 항 및 제29 항 중 어느 한 항에 있어서,상기 제1 절연막의 비유전율이 2.5 이하인 것을 특징으로 하는 배선기판.
- 기판과,제1 전극과 제2 전극과의 사이에 배치된 전기광학소자와,상기 제1 전극 및 상기 제2 전극과의 사이 중 적어도 한 쪽과 상기 기판과의 사이에 배치된 제1 절연막을 포함하고,상기 제1 절연막의 비유전율은 4 이하인 것을 특징으로 하는 전기광학장치.
- 기판과,제1 전극과 제2 전극과의 사이에 배치된 전기광학소자와,상기 제1 전극 및 상기 제2 전극과의 사이 중 적어도 한 쪽과 상기 기판과의 사이에 배치된 제1 절연막을 포함하고,상기 제1 절연막의 비유전율은 상기 기판의 비유전율보다 낮은 것을 특징으로 하는 전기광학장치.
- 기판과,제1 전극과 제2 전극과의 사이에 배치된 전기광학소자와,상기 제1 전극 및 상기 제2 전극과의 사이 중 적어도 한 쪽과 상기 기판과의 사이에 배치된 제1 절연막을 포함하고,상기 제1 절연막은 상기 제1 전극의 주위에 배치되며,상기 제1 절연막의 비유전율은 4 이하인 것을 특징으로 하는 전기광학장치.
- 제37 항 내지 제39 항 중 어느 한 항에 있어서,제2 절연막을 더 포함하고 있는 것을 특징으로 하는 전기광학장치.
- 제40 항에 있어서,상기 제1 절연막은 상기 제2 절연막과 상기 기판과의 사이에 배치되어 있는 것을 특징으로 하는 전기광학장치.
- 제40 항에 있어서,상기 제2 절연막은 적어도 일부가 물질의 통과를 방지하는 보호막인 것을 특징으로 하는 전기광학장치.
- 제37 항 내지 제39 항 중 어느 한 항에 있어서,상기 제1 절연막은 실리카 유리, 알킬실록산폴리머, 알킬실세스키옥산폴리머, 수소화 알킬실세스키옥산폴리머, 폴리아릴에테르 중 어느 하나를 포함하는 스핀 온 글래스막, 다이아몬드막, 및 불소화 아몰퍼스 탄소막 중 적어도 하나를 포함하는 것을 특징으로 하는 전기광학장치.
- 제37 항 내지 제39 항 중 어느 한 항에 있어서,상기 제1 절연막은 다공질 재료로 이루어지는 것을 특징으로 하는 전기광학장치.
- 제37 항 내지 제39 항 중 어느 한 항에 있어서,상기 제1 절연막은 에어로 겔, 다공질 실리카, 불화마그네슘의 미립자를 분산한 겔, 불소계 폴리머, 다공성 폴리머, 및 소정의 재료에 미립자를 함유시킨 것 중 적어도 하나를 포함하는 것을 특징으로 하는 전기광학장치.
- 제37 항 내지 제39 항 중 어느 한 항에 있어서,상기 제1 절연막의 적어도 일부를 덮는 보호막을 더 구비하는 것을 특징으로 하는 전기광학장치.
- 제46 항에 있어서,상기 제1 절연막의 적어도 일부는 배리어층에 의해 덮여 있는 것을 특징으로 하는 전기광학장치.
- 제37 항 내지 제39 항 중 어느 한 항에 있어서,상기 제1 절연막의 비유전율이 3 이하인 것을 특징으로 하는 전기광학장치.
- 제37 항 내지 제39 항 중 어느 한 항에 있어서,상기 제1 절연막의 비유전율이 2.5 이하인 것을 특징으로 하는 전기광학장치.
- 제21 항, 제22 항, 제25 항, 제28 항 및 제29 항 중 어느 한 항에 기재된 배선기판과,상기 배선으로부터 공급되는 상기 전기적 신호 또는 상기 구동 전력에 의해 기능을 발휘하는 기능막을 포함하는 것을 특징으로 하는 전자장치.
- 제37 항 내지 제39 항 중 어느 한 항에 기재된 전기광학장치를 구비하는 것을 특징으로 하는 전자기기.
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JP2003070531A JP4015044B2 (ja) | 2002-03-20 | 2003-03-14 | 配線基板、電子装置及び電子機器 |
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KR20050113045A (ko) * | 2004-05-28 | 2005-12-01 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 소자 및 그 제조방법 |
JP4876415B2 (ja) * | 2005-03-29 | 2012-02-15 | セイコーエプソン株式会社 | 有機el装置の製造方法、デバイスの製造方法 |
KR101143006B1 (ko) * | 2005-10-28 | 2012-05-08 | 삼성전자주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
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JP5456480B2 (ja) * | 2006-11-28 | 2014-03-26 | コーニンクレッカ フィリップス エヌ ヴェ | 粒子を含む要素を有する電子装置を駆動する方法 |
KR101338739B1 (ko) * | 2006-12-29 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 이의 제조 방법 |
JP5306341B2 (ja) * | 2007-07-04 | 2013-10-02 | コーニンクレッカ フィリップス エヌ ヴェ | パターン化された層を基板上に形成する方法 |
WO2012073795A1 (ja) * | 2010-11-30 | 2012-06-07 | シャープ株式会社 | 表示装置およびその駆動方法、並びに電子装置 |
KR101874048B1 (ko) * | 2011-01-14 | 2018-07-06 | 삼성디스플레이 주식회사 | 유기 발광 표시장치 |
KR102059014B1 (ko) | 2013-05-28 | 2019-12-26 | 삼성디스플레이 주식회사 | 발광 표시 장치 및 그 제조 방법 |
US20160330835A1 (en) | 2014-01-24 | 2016-11-10 | Toppan Forms Co., Ltd. | Wiring board |
CN104218190B (zh) * | 2014-08-26 | 2017-02-15 | 京东方科技集团股份有限公司 | 有机电致发光器件及其制造方法、显示装置 |
CN104409647A (zh) * | 2014-11-14 | 2015-03-11 | 京东方科技集团股份有限公司 | 一种像素单元及其制作方法、发光器件、显示装置 |
CN106848024A (zh) * | 2017-02-20 | 2017-06-13 | 深圳市华星光电技术有限公司 | 发光器件及显示装置 |
DE112018005069B4 (de) * | 2017-09-12 | 2024-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Licht emittierendes Element, Licht emittierende Vorrichtung, elektronisches Gerät und Beleuchtungsvorrichtung |
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JP3541625B2 (ja) * | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
JP3580092B2 (ja) * | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
JP2000331991A (ja) * | 1999-03-15 | 2000-11-30 | Sony Corp | 半導体装置の製造方法 |
JP4683696B2 (ja) * | 1999-07-09 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001284297A (ja) * | 2000-03-31 | 2001-10-12 | Sony Corp | 研磨装置、研磨方法および半導体装置の製造方法 |
JP4889872B2 (ja) * | 2000-04-17 | 2012-03-07 | 株式会社半導体エネルギー研究所 | 発光装置及びそれを用いた電気器具 |
JP2002026122A (ja) * | 2000-07-04 | 2002-01-25 | Sony Corp | 半導体装置の製造方法 |
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- 2003-03-14 JP JP2003070531A patent/JP4015044B2/ja not_active Expired - Lifetime
- 2003-03-19 CN CN03107244.5A patent/CN1285242C/zh not_active Expired - Lifetime
- 2003-03-19 TW TW092106057A patent/TWI259575B/zh not_active IP Right Cessation
- 2003-03-20 KR KR1020030017440A patent/KR100574261B1/ko active IP Right Grant
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CN1446028A (zh) | 2003-10-01 |
TWI259575B (en) | 2006-08-01 |
CN1285242C (zh) | 2006-11-15 |
JP2004004610A (ja) | 2004-01-08 |
JP4015044B2 (ja) | 2007-11-28 |
TW200306661A (en) | 2003-11-16 |
KR20030079684A (ko) | 2003-10-10 |
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