KR100571373B1 - 리소그래피장치의 교정방법, 리소그래피장치의 교정에사용하는 마스크, 리소그래피장치, 디바이스제조방법,이것에 의해 제조된 디바이스 - Google Patents

리소그래피장치의 교정방법, 리소그래피장치의 교정에사용하는 마스크, 리소그래피장치, 디바이스제조방법,이것에 의해 제조된 디바이스 Download PDF

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KR100571373B1
KR100571373B1 KR1020020025081A KR20020025081A KR100571373B1 KR 100571373 B1 KR100571373 B1 KR 100571373B1 KR 1020020025081 A KR1020020025081 A KR 1020020025081A KR 20020025081 A KR20020025081 A KR 20020025081A KR 100571373 B1 KR100571373 B1 KR 100571373B1
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South Korea
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dose
focus
sensitive portion
sensitive
lines
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Expired - Fee Related
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Korean (ko)
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KR20020085840A (ko
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바젤만스요하네스야코부스마테우스
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에이에스엠엘 네델란즈 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020020025081A 2001-05-08 2002-05-07 리소그래피장치의 교정방법, 리소그래피장치의 교정에사용하는 마스크, 리소그래피장치, 디바이스제조방법,이것에 의해 제조된 디바이스 Expired - Fee Related KR100571373B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01304122.3 2001-05-08
EP01304122A EP1256843A1 (en) 2001-05-08 2001-05-08 Method of calibrating a lithographic apparatus

Publications (2)

Publication Number Publication Date
KR20020085840A KR20020085840A (ko) 2002-11-16
KR100571373B1 true KR100571373B1 (ko) 2006-04-14

Family

ID=8181953

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020025081A Expired - Fee Related KR100571373B1 (ko) 2001-05-08 2002-05-07 리소그래피장치의 교정방법, 리소그래피장치의 교정에사용하는 마스크, 리소그래피장치, 디바이스제조방법,이것에 의해 제조된 디바이스

Country Status (5)

Country Link
US (1) US6777139B2 (enExample)
EP (1) EP1256843A1 (enExample)
JP (1) JP4057847B2 (enExample)
KR (1) KR100571373B1 (enExample)
TW (1) TW588225B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906305B2 (en) * 2002-01-08 2005-06-14 Brion Technologies, Inc. System and method for aerial image sensing
US6828542B2 (en) * 2002-06-07 2004-12-07 Brion Technologies, Inc. System and method for lithography process monitoring and control
TWI251722B (en) * 2002-09-20 2006-03-21 Asml Netherlands Bv Device inspection
US6807503B2 (en) * 2002-11-04 2004-10-19 Brion Technologies, Inc. Method and apparatus for monitoring integrated circuit fabrication
US6867846B2 (en) 2003-01-15 2005-03-15 Asml Holding Nv Tailored reflecting diffractor for EUV lithographic system aberration measurement
US7268891B2 (en) 2003-01-15 2007-09-11 Asml Holding N.V. Transmission shear grating in checkerboard configuration for EUV wavefront sensor
US6759297B1 (en) 2003-02-28 2004-07-06 Union Semiconductor Technology Corporatin Low temperature deposition of dielectric materials in magnetoresistive random access memory devices
US7053355B2 (en) 2003-03-18 2006-05-30 Brion Technologies, Inc. System and method for lithography process monitoring and control
JP3848332B2 (ja) * 2003-08-29 2006-11-22 キヤノン株式会社 露光方法及びデバイス製造方法
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
US7177009B2 (en) * 2004-10-01 2007-02-13 Asml Netherlands B.V. Position determination method and lithographic apparatus
US7541121B2 (en) * 2004-10-13 2009-06-02 Infineon Technologies Ag Calibration of optical line shortening measurements
US7619717B2 (en) * 2006-10-12 2009-11-17 Asml Netherlands B.V. Method for performing a focus test and a device manufacturing method
TWI383273B (zh) * 2007-11-20 2013-01-21 Asml Netherlands Bv 微影投射裝置之焦點測量方法及微影投射裝置之校準方法
DE102008015631A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Sms Gmbh Verfahren und Vorrichtung zur Vermessung von Masken für die Photolithographie
NL1036647A1 (nl) * 2008-04-16 2009-10-19 Asml Netherlands Bv A method of measuring a lithographic projection apparatus.
EP2131245A3 (en) * 2008-06-02 2012-08-01 ASML Netherlands BV Lithographic apparatus and its focus determination method
WO2010070964A1 (ja) * 2008-12-16 2010-06-24 株式会社村田製作所 回路モジュール及びその管理方法
CN105892238B (zh) * 2011-08-31 2018-04-13 Asml荷兰有限公司 确定聚焦位置修正的方法、光刻处理元和器件制造方法
KR102125876B1 (ko) 2011-10-20 2020-06-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 방법
NL2010905A (en) 2012-06-22 2013-12-24 Asml Netherlands Bv Method of determining focus, inspection apparatus, patterning device, substrate and device manufacturing method.
KR102185757B1 (ko) * 2015-12-21 2020-12-03 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치의 포커스 성능을 측정하는 장치들 및 패터닝 디바이스들 및 방법들, 디바이스 제조 방법
CN109949366A (zh) * 2019-03-08 2019-06-28 鲁班嫡系机器人（深圳）有限公司 一种定位设备及其方法
CN111340893B (zh) * 2020-03-24 2024-12-13 奥比中光科技集团股份有限公司 一种标定板、标定方法及系统

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1310205C (en) 1988-03-31 1992-11-17 Roger L. Barr Quantitative lense analysis technique
EP0534720B1 (en) 1991-09-24 1998-05-27 Raphael L. Levien Register marks

Also Published As

Publication number Publication date
KR20020085840A (ko) 2002-11-16
US6777139B2 (en) 2004-08-17
EP1256843A1 (en) 2002-11-13
JP2003022968A (ja) 2003-01-24
JP4057847B2 (ja) 2008-03-05
TW588225B (en) 2004-05-21
US20020172876A1 (en) 2002-11-21

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