KR100476055B1 - 반사형 액정표시소자의 박막트랜지스터 패널 제조방법 - Google Patents
반사형 액정표시소자의 박막트랜지스터 패널 제조방법 Download PDFInfo
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- KR100476055B1 KR100476055B1 KR10-2001-0083316A KR20010083316A KR100476055B1 KR 100476055 B1 KR100476055 B1 KR 100476055B1 KR 20010083316 A KR20010083316 A KR 20010083316A KR 100476055 B1 KR100476055 B1 KR 100476055B1
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 55
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 238000004380 ashing Methods 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 64
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 239000011521 glass Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
- TFT 영역, 커패시터 홀 영역, 게이트 패드 영역 그리고 팬 아웃 영역을 갖는 기판을 준비하는 단계와;상기 기판 상에 제 1 마스크를 이용하여 상기 TFT 영역에 게이트 전극을 형성함과 동시에 커패시터 홀 영역에 제 1 금속막을 형성하는 단계와;상기 제 1 금속막이 형성된 상기 기판 전 영역 상에 게이트 절연막을 형성하는 단계와;상기 게이트 절연막 상의 상기 TFT 영역에 제 2 마스크를 이용하여 활성층을 형성하는 단계와;상기 활성층이 형성된 상기 기판 상에 제 3 마스크를 이용하여 상기 TFT 영역에 소오스 및 드레인 전극을 형성함과 동시에 상기 커패시터 홀 영역에 공통라인과 팬 아웃 영역에 제 2 금속막을 형성하는 단계와;상기 소오스 및 드레인 전극과 상기 공통라인과 상기 제 2 금속막이 형성된 상기 기판 전 영역 상에 보호막을 형성하는 단계와;상기 보호막 전 영역 상에 유기절연막을 증착하는 단계와;상기 유기절연막을 선택적으로 패터닝하는 단계와;상기 소오스 및 드레인 전극과 상기 제 1 및 제 2 금속막이 노출되도록 제 4 마스크를 이용하여 상기 보호막을 식각하는 단계와;상기 소오스 및 드레인 전극과 상기 제 1 금속막과 연결되는 화소전극을 형성함과 동시에 상기 제 2 금속막 그리고 상기 게이트 패드 영역에 제 3 금속막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반사형 TFT LCD 패널 제조방법.
- 제 1 항에 있어서,상기 화소전극은 Al 단일막, AlNd 단일막, Mo와Al이 차례로 적층된 이중막, Mo와AlNd이 차례로 적층된 이중막 중 하나를 사용하는 것을 특징으로 하는 반사형 TFT LCD 패널 제조방법.
- 제 1 항에 있어서,상기 보호막 식각시 상기 유기절연막을 동시에 에싱처리 하는 것을 특징으로 하는 반사형 TFT LCD 패널 제조방법.
- 제 3 항에 있어서,상기 보호막 식각 및 유기절연막 에싱처리 가스는 SF6, O2, He 혼합가스를 사용하는 것을 특징으로 하는 반사형 TFT LCD 패널 제조방법.
- 제 1 항에 있어서,상기 유기절연막 패터닝시 상기 게이트 패드 영역을 완전히 오픈시키는 것을 특징으로 하는 반사형 TFT LCD 패널 제조방법.
- 제 1 항에 있어서,상기 유기절연막 패터닝 후 열처리 공정을 추가하는 것을 특징으로 하는 반사형 TFT LCD 패널 제조방법.
- 제 6 항에 있어서,상기 열처리 공정은 150∼230℃에서 30분∼1시간 실시하는 것을 특징으로 하는 반사형 TFT LCD 패널 제조방법.
Priority Applications (1)
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KR10-2001-0083316A KR100476055B1 (ko) | 2001-12-22 | 2001-12-22 | 반사형 액정표시소자의 박막트랜지스터 패널 제조방법 |
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KR10-2001-0083316A KR100476055B1 (ko) | 2001-12-22 | 2001-12-22 | 반사형 액정표시소자의 박막트랜지스터 패널 제조방법 |
Publications (2)
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KR20030053563A KR20030053563A (ko) | 2003-07-02 |
KR100476055B1 true KR100476055B1 (ko) | 2005-03-10 |
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KR10-2001-0083316A KR100476055B1 (ko) | 2001-12-22 | 2001-12-22 | 반사형 액정표시소자의 박막트랜지스터 패널 제조방법 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101252004B1 (ko) | 2007-01-25 | 2013-04-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR100899426B1 (ko) * | 2007-09-14 | 2009-05-27 | 삼성모바일디스플레이주식회사 | 유기 전계 발광표시장치 제조방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR19980031762A (ko) * | 1996-10-31 | 1998-07-25 | 김광호 | Loc 패널의 아웃 리드 본딩패드와 팬 아웃부의 콘택구조 |
KR20000066953A (ko) * | 1999-04-22 | 2000-11-15 | 김영환 | 액정 패널의 데이터 패드부 |
KR20010066244A (ko) * | 1999-12-31 | 2001-07-11 | 구본준, 론 위라하디락사 | 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치 |
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- 2001-12-22 KR KR10-2001-0083316A patent/KR100476055B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR19980031762A (ko) * | 1996-10-31 | 1998-07-25 | 김광호 | Loc 패널의 아웃 리드 본딩패드와 팬 아웃부의 콘택구조 |
KR20000066953A (ko) * | 1999-04-22 | 2000-11-15 | 김영환 | 액정 패널의 데이터 패드부 |
KR20010066244A (ko) * | 1999-12-31 | 2001-07-11 | 구본준, 론 위라하디락사 | 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치 |
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