KR100471160B1 - Power amplifier and duplexer composite apparatus - Google Patents

Abstract

An object of the present invention is to provide a power amplification and duplex composite device applicable to a wireless communication terminal such as a mobile phone.

The present invention is a substrate in which a plurality of dielectric layers are stacked; A power amplifier mounted on the substrate; A passive circuit unit mounted on the substrate and configured to remove impedance of the power amplifier and power supply noise; A duplexer mounted on the substrate and including a reception (RX) filter unit and a transmission (TX) filter unit; A coupling part formed on a portion of the plurality of dielectric layers of the substrate in a conductive pattern and connected between the power amplifier and the duplexer; And an impedance matching element formed in a portion of the plurality of dielectric layers of the substrate in a conductive pattern and connected between the reception (RX) filter unit and the transmission (TX) filter unit of the duplexer.

According to the present invention, by forming an impedance matching element that matches the impedance between the transmitting and receiving terminals of the duplex on a part of the inner layer of the substrate on which the duplexer is mounted, the height of the duplexer can be reduced, thereby enabling miniaturization of the mobile communication terminal. Have an effect

Description

POWER AMPLIFIER AND DUPLEXER COMPOSITE APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power amplification and duplex composite apparatus applicable to a wireless communication terminal such as a mobile phone. In this case, by forming an impedance matching element that matches the impedance between the transmitting and receiving terminals of the duplex on a part of the inner layer of the substrate on which the duplexer is mounted, the self-height of the duplexer can be reduced, thereby miniaturizing the mobile communication terminal. Amplification and duplex composite devices.

In general, a cellular or PCS cellular phone terminal or other wireless communication terminal includes a diplexer connected to an antenna ANT to pass a cellular band of approximately 824-894 MHz or a PCS band of approximately 1750-1910 MHz, A duplexer that divides the cellular band into a transmit (TX) band of approximately 824-849 MHz and a receive (RX) band of approximately 869-894 MHz, or a duplexer that divides the PCS band into a transmit (TX) and receive (TX) band Include.

In recent years, mobile communication terminals such as mobile phones have to satisfy the requirements for multifunctionalization in which various functions are combined in terms of functionality, and miniaturization in terms of size, such as reducing the overall size or height. In response to the demand, research and development are being conducted on a complex device in which a power amplifier module and a duplexer are formed in one module to amplify the power of a transmission signal.

1 is a circuit diagram of a conventional power amplification and duplex composite device.

Referring to FIG. 1, a conventional power amplifier and duplex composite device includes a power amplifier 11 for amplifying the power of a transmission signal, and a passive device for impedance matching and power supply noise removal of the power amplifier 11. Passive circuit section 12 (12A, 12B), coupling section 13 for detecting output signal of power amplifier section 11, and duplexer for separately passing through transmission and reception signals corresponding to a predetermined frequency (14). The passive circuit unit 12 includes an impedance matching circuit unit 12A of the power amplifier unit 11 and a circuit unit 12B for removing power supply noise.

2 is a plan view of the composite device, and FIG. 2B is a cross-sectional view taken along line A1-A2 of the composite device of FIG. 2A.

2A and 2B, in the conventional power amplification and duplex composite device, a power amplification unit 11, a passive circuit unit 12, and a duplexer 14 are mounted on a substrate (PCB) including a plurality of dielectric layers. A coupling part 13 formed of a conductive pattern is formed on an inner layer of the substrate PCB. Since the substrate PCB forms the coupling part 13 and the like in the inner layer, approximately four dielectric layers are stacked.

3 is a cross-sectional view of a conventional SAW duplexer. Referring to FIG. 3, in the conventional SAW duplexer 14, 14A is made of a low temperature cofired ceramic (LTCC), and a package having an internal space for accommodating the device, 14B Cap for sealing the element receiving space of the package 14A, 14C is a SAW element mounted in the inner space of the package 14A having a receive (RX) filter unit and a transmit (TX) filter unit, 14D is the SAW element A λ / 4 impedance matching element connected between a receive (RX) filter and a transmit (TX) filter of 14C to match an impedance between the receive (RX) and transmit (TX) filters, CP being the package The conductive pattern formed from the inner surface of the inner space of 14A to the outer bottom surface, BW, is a bonding wire for bonding the terminal of the SAW element 14C and the conductive pattern CP formed in the package 14A.

In particular, the impedance matching element 14D is formed in the inner layer of the package 14A. For this purpose, the package 14A is made of low temperature cofired ceramic (LTCC).

In such conventional power amplification and duplex composite devices, the height of the composite device is "the height of the SAW duplexer (up to 1.5 mm) + the height of the substrate (PCB) (up to 0.4 mm) + other height (molding height)", which is Maximum 2mm (1.5mm + 0.4mm + 0.1mm), which has a relatively high height has a limit in lowering the height of the mobile communication terminal. Here, the height of the SAW duplexer occupies approximately 75% of the total height, because the impedance matching element 14D is formed inside the package of the SAW duplexer.

In addition, since the SAW duplexer implements an impedance matching element in a low temperature cofired ceramic (LTCC) package, as shown in FIG. 3, the process cost is increased due to the material cost of expensive low temperature cofired ceramics, thereby increasing the overall complexity of the composite device. The low cost cofired ceramics (LTCC) package has a problem in that the low cost cofired ceramics (LTCC) package has a weak mechanical strength because of its weakness in cracking and moisture penetration. .

The present invention has been proposed to solve the above problems, an object of the present invention is to package an SAW duplexer for separating a frequency band into a transmission and reception band and a power amplifier for amplifying a transmission signal in a single component packaged in a single component, The present invention provides an power amplification and duplex composite apparatus in which an impedance matching element for matching impedance between transmitting and receiving terminals of a duplex is formed on an inner layer of a substrate on which a duplexer is mounted.

In addition, another object of the present invention is to provide a power amplification and duplex composite device that can reduce the height of the duplexer itself to enable the miniaturization of the mobile communication terminal.

In order to achieve the above object of the present invention, the power amplification and duplex composite device of the present invention

A substrate in which a plurality of dielectric layers are stacked;

A power amplifier mounted on the substrate and amplifying a transmission signal;

A passive circuit unit mounted on the substrate and connected to the power amplifier for impedance matching of the power amplifier and removing power supply noise;

A duplexer mounted on the substrate, the duplexer including a reception (RX) filter unit and a transmission (TX) filter unit to separate and pass transmission signals and reception signals corresponding to a predetermined frequency band, respectively;

A coupling part formed on a portion of the plurality of dielectric layers of the substrate in a conductive pattern and connected between the power amplifier and the duplexer to sense transmission power from the power amplifier; And

A conductive pattern is formed on a portion of the plurality of dielectric layers of the substrate, and the receive (RX) filter unit and the transmit (TX) filter unit of the duplexer are used for impedance matching between the receive (RX) and transmit (TX) filters of the duplexer. Impedance Matching Element Connected Between

Characterized in having a.

The duplexer is a SAW duplexer mounted on the substrate and including a SAW receiving (RX) filter unit and a transmitting (TX) filter unit for separately passing a transmission signal and a reception signal corresponding to a predetermined frequency band, respectively. do.

The SAW duplexer is made of a high temperature co-fired ceramic (HTCC), and includes a sealed inner space mounted on the substrate for accommodating elements, and a conductive pattern formed from an inner surface of the inner space to an outer bottom surface thereof. A formed package, a piezoelectric wafer mounted in an inner space of the package, a SAW function pattern unit including a SAW receiving (RX) filter unit, a transmitting (TX) filter unit and a connecting terminal formed on the piezoelectric wafer, and the SAW It includes a bonding wire connecting the connection terminal of the functional pattern portion and the conductive pattern of the package.

In addition, the SAW duplexer is made of a high temperature co-fired ceramic (HTCC), and the package is formed on the substrate, the upper surface and the lower surface on which the device is mounted, the conductive pattern formed from the upper surface to the lower surface and And a SAW function pattern part including a piezoelectric wafer mounted on an upper part of the package, a SAW receive (RX) filter part, a transmit (TX) filter part, and a connection terminal formed on the lower part of the wafer, and the SAW function pattern part connected thereto. Bonding bumps connecting the terminal and the conductive pattern of the package.

The impedance matching element is a phase conversion element which is formed in a conductive pattern on at least one dielectric layer of the dielectric layer of the substrate and converts a signal phase between a receive (RX) filter part and a transmit (TX) filter part of the duplexer. The phase shift element may be made of a λ / 4 strip line formed in a conductive pattern on a portion of at least one dielectric layer of the substrate.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4 is a cross-sectional view of a power amplification and duplex composite device according to the present invention.

Referring to FIG. 4, the power amplification and duplex composite apparatus according to the present invention includes a substrate PCB having a plurality of dielectric layers stacked thereon, and a power amplifier 41 mounted on the substrate PCB to amplify a transmission signal. And a passive circuit part 42 mounted on the substrate PCB and connected to the power amplifier 41 for impedance matching of the power amplifier 41 and removing power supply noise. A duplexer 44 mounted on the substrate and including a reception (RX) filter unit and a transmission (TX) filter unit for separating and transmitting a transmission signal and a reception signal corresponding to a predetermined frequency band, respectively, A coupling part 43 formed on a portion of the plurality of dielectric layers in a conductive pattern and connected between the power amplifier 41 and the duplexer 44 to sense transmission power from the power amplifier 41. One of a plurality of dielectric layers of the substrate (PCB) And a conductive pattern formed between the receive (RX) filter unit and the transmit (TX) filter unit of the duplexer 44 for impedance matching between the receive (RX) and transmit (TX) filters of the duplexer 44. The impedance matching element 45 is connected.

Here, unlike the conventional case in which the impedance matching element 45 is formed in the duplexer 44, by forming in the inner layer of the substrate (PCB), the package included in the duplexer 44, low-cost and mechanical strength The high temperature co-fired ceramic (HTCC) can be formed, as well as lowering the height of the duplexer 44 itself.

The substrate PCB has a bottom of the substrate PCB on an upper mounting surface of the substrate PCB on which the power amplifier 41 is mounted to transfer heat generated from the power amplifier 41 to the outside. In order to transfer the first via hole VH1 formed through the surface and the heat generated from the passive circuit portion 42 to the outside, the upper surface of the substrate PCB on which the passive circuit portion 42 is mounted may be formed. The second via hole VH2 formed through the bottom surface of the substrate PCB and the upper portion of the substrate PCB on which the duplex 44 is mounted to transfer the heat generated from the duplex 44 to the outside. The third via hole VH3 penetrates from the mounting surface to the bottom surface of the substrate PCB.

A protective layer 46 for protecting circuit parts and elements mounted on the substrate PCB is mounted on the substrate PCB, and the protective layer 46 is a circuit part and elements mounted on the substrate PCB. Insulating resin molded in the upper portion of the substrate to protect them, and a metal case formed on the insulating resin.

The duplexer 44 is mounted on the substrate PCB, and includes a SAW receiving (RX) filter unit and a transmitting (TX) filter unit for separating and transmitting a transmission signal and a reception signal corresponding to a predetermined frequency band, respectively. It may be implemented as a SAW duplexer.

FIG. 5 is a first exemplary diagram of the duplexer of FIG. 4.

Referring to FIG. 5, the SAW duplexer 44 is made of high temperature co-fired ceramic (HTCC), mounted on the substrate, includes a sealed inner space for accommodating an element, and is external from an inner surface of the inner space. The package PKG having the conductive pattern CP formed to the bottom surface of the substrate, the piezoelectric wafer WF mounted in the inner space of the package PKG, and the SAW reception RX formed on the piezoelectric wafer WF. SAW function pattern part SAW-P including a filter part and a TX filter part and a connection terminal, a connection terminal of the SAW function pattern part SAW-P and a conductive pattern CP of the package PKG. Including a bonding wire (BW) for connecting.

Referring to Figure 5, the composite device of the present invention has a height of about 1.8mm, this height can be seen that the height of the conventional composite device is relatively low compared to approximately 2mm.

FIG. 6 is a second exemplary diagram of the duplexer of FIG. 4.

Referring to FIG. 6, the SAW duplexer 44 is made of high temperature co-fired ceramic (HTCC), and includes a top surface and a bottom surface mounted on the substrate and on which the device is mounted, and from the top surface to the bottom surface. The package PKG on which the formed conductive pattern CP is formed, the piezoelectric wafer WF mounted on the package PKG, and the SAW receiving (RX) filter unit formed on the lower portion of the wafer WF and transmitting ( TX) Bonding for connecting the SAW function pattern part SAW-P including a filter part and a connection terminal, and the connection terminal of the SAW function pattern part SAW-P and the conductive pattern CP of the package PKG. Bumps BB.

Referring to Figure 6, the composite device of the present invention has a height of about 1.5mm, it can be seen that the height of the conventional composite device is significantly lower than the height of about 2mm.

As described above, in the present invention, it can be seen that the height of the present invention can be lowered when applied to the flip bonding duplexer using the bonding bumps rather than the bonding wire duplexer using the bonding wires.

Meanwhile, the impedance matching element 45 is formed in a conductive pattern on at least one dielectric layer of the dielectric layer of the substrate PCB, and the reception (RX) filter unit and the transmission (TX) filter unit of the duplexer 44 are formed. The phase shifting element may be implemented as a phase shifting element for converting a signal phase therebetween. The phase shifting element may be implemented as a λ / 4 strip line formed in a conductive pattern on at least one of the dielectric layers of the substrate.

As described above, in order to form the impedance matching device in the package inner layer of the duplexer, the package of the duplexer must be made of low temperature cofired ceramic (LTCC), in which case, as mentioned above, the height of the duplexer itself Is high, due to the weak mechanical strength of the low-temperature co-fired ceramic (LTCC) has a problem that the duplexer itself is vulnerable from external impact.

In order to solve this conventional problem, in the present invention, the impedance matching element is formed in the lower substrate inner layer of the duplexer, so that the package of the duplexer can be made of high temperature co-fired ceramic (HTCC), so that the duplexer has sufficient mechanical strength. To make it possible.

In addition, since the impedance matching element can be formed on a substrate having a height substantially the same as that of the related art while lowering the height of the duplexer, the height of the substrate is hardly increased, and thus, the overall height of the composite device of the present invention can be lowered. Will be.

The present invention described above can be applied to a device for transmitting and receiving a wireless signal, as well as a mobile phone or a PDA.

According to the present invention as described above, the SAW duplexer for separating the frequency band into a transmission and reception band and the power amplifier for amplifying a transmission signal in a single component packaged in a single component, the impedance between the transmitting and receiving end of the duplex By forming the impedance matching element to be matched on a part of the inner layer of the substrate on which the duplexer is mounted, the self-height of the duplexer can be reduced, thereby miniaturizing the mobile communication terminal.

The above description is only a description of specific embodiments of the present invention, and the present invention is not limited to these specific embodiments, and various changes and modifications of the configuration are possible from the above-described specific embodiments of the present invention. It will be apparent to those skilled in the art to which the present invention pertains.

1 is a circuit diagram of a conventional power amplification and duplex composite device.

2 is a plan view of the composite device, and FIG. 2B is a cross-sectional view taken along line A1-A2 of the composite device of FIG. 2A.

3 is a cross-sectional view of a conventional SAW duplexer.

4 is a cross-sectional view of a power amplification and duplex composite device according to the present invention.

FIG. 5 is a first exemplary diagram of the duplexer of FIG. 4.

FIG. 6 is a second exemplary diagram of the duplexer of FIG. 4.

Explanation of symbols on the main parts of the drawings

40: composite device

41: power amplifier

42: passive circuit

43: coupling part

44: SAW Duplexer

45: impedance matching element

46: case

PCB: Board

Claims (11)

A substrate in which a plurality of dielectric layers are stacked; A power amplifier mounted on the substrate and amplifying a transmission signal; A passive circuit unit mounted on the substrate and connected to the power amplifier for impedance matching of the power amplifier and removing power supply noise; A duplexer mounted on the substrate, the duplexer including a reception (RX) filter unit and a transmission (TX) filter unit to separate and pass transmission signals and reception signals corresponding to a predetermined frequency band, respectively; A coupling part formed on a portion of the plurality of dielectric layers of the substrate in a conductive pattern and connected between the power amplifier and the duplexer to sense transmission power from the power amplifier; And A conductive pattern is formed on a portion of the plurality of dielectric layers of the substrate, and the receive (RX) filter unit and the transmit (TX) filter unit of the duplexer are used for impedance matching between the receive (RX) and transmit (TX) filters of the duplexer. Impedance Matching Element Connected Between Power amplification and duplexer complex device characterized in that it comprises a. The method of claim 1, wherein the substrate And a first via hole penetrating from the upper mounting surface of the substrate on which the power amplifier is mounted to the bottom surface of the substrate to transfer heat generated from the power amplifier to the outside. Duplexer composite device. The method of claim 1, wherein the substrate In order to transfer the heat generated from the passive circuit portion to the outside, the power amplification and duplexer comprising a second via hole formed to penetrate from the upper mounting surface of the substrate on which the passive circuit portion is mounted to the bottom surface of the substrate Composite devices. The method of claim 1, wherein the substrate In order to transfer heat generated from the duplex to the outside, the power amplification and duplexer composite device comprising a third via hole formed through the duplex from the upper mounting surface of the substrate mounted to the bottom surface of the substrate . The method of claim 1, wherein the upper portion of the substrate The power amplifier and duplexer composite device, characterized in that the protective layer for protecting the circuit portion and the elements mounted on the substrate (PCB) is mounted on the substrate (PCB). The method of claim 5, wherein the protective layer 46 An insulating resin molded over the substrate to protect circuit parts and devices mounted on the substrate (PCB); And A metal case formed on the insulating resin Power amplification and duplexer complex device comprising a. The method of claim 1, wherein the duplexer An SAW duplexer mounted on the substrate, the SAW duplexer including a SAW receiving (RX) filter unit and a transmitting (TX) filter unit for separating and transmitting a transmission signal and a reception signal corresponding to a predetermined frequency band, respectively; And a duplexer composite device. 8. The method of claim 7, wherein the SAW duplexer A package made of high temperature co-fired ceramic (HTCC), including a sealed inner space mounted to the substrate and containing a sealed element, and having a conductive pattern formed from an inner surface of the inner space to an outer bottom surface thereof; A piezoelectric wafer mounted in the inner space of the package; A SAW function pattern part including a SAW receive (RX) filter part, a transmit (TX) filter part, and a connection terminal formed on the piezoelectric wafer; And Bonding wires for connecting the connection terminal of the SAW function pattern portion and the conductive pattern of the package Power amplification and duplexer composite device comprising a. 8. The method of claim 7, wherein the SAW duplexer A package comprising a high temperature co-fired ceramic (HTCC), the upper surface and the lower surface mounted on the substrate and on which the device is mounted, and the conductive pattern formed from the upper surface to the lower surface; A piezoelectric wafer mounted on the package; A SAW function pattern unit including a SAW receive (RX) filter unit, a transmit (TX) filter unit, and a connection terminal formed at a lower portion of the wafer; And Bonding bumps connecting the connection terminal of the SAW function pattern portion and the conductive pattern of the package Power amplification and duplexer composite device comprising a. The method of claim 1, wherein the impedance matching element And a phase conversion element formed on a portion of at least one dielectric layer of the substrate in a conductive pattern and converting a signal phase between a receive (RX) filter unit and a transmit (TX) filter unit of the duplexer. Power amplification and duplexer composite device. The method of claim 10, wherein the phase shift element And a λ / 4 strip line formed in a conductive pattern on a portion of at least one of the dielectric layers of the substrate.