KR100456394B1 - Semiconductor manufacturing apparatus and wiring formation method of semiconductor device employing the same - Google Patents

Abstract

The semiconductor manufacturing apparatus and the wiring forming method of the semiconductor element employing the same according to the present invention may include at least one probe attached along an edge portion of a cathode electrode in a third station of the semiconductor manufacturing apparatus including the first to third film deposition stations. Current flows instantaneously (for example, within 10 seconds) to the metal wiring layer (aluminum layer or aluminum alloy layer) on the semiconductor substrate mounted on the heater block to form the metal wiring (aluminum wiring or aluminum alloy wiring). First, since the wiring can be formed in the semiconductor manufacturing apparatus for film deposition without a heat treatment process using a separate manufacturing equipment, it is possible to reduce the process time loss, and second, by the heat treatment process for a long time (for example, about 50 minutes). It is possible to minimize the occurrence of heel in the wiring layer caused by the semiconductor device Line reliability can be improved.

Description

Semiconductor manufacturing apparatus and wiring formation method of semiconductor element employing same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a wiring forming method of a semiconductor element employing the same. More particularly, the metal wiring (aluminum wiring) is fabricated in such a manner as to flow current instead of a heat treatment process by changing the structure of the semiconductor manufacturing apparatus. Or an aluminum alloy wiring), and relates to a semiconductor manufacturing apparatus and a wiring forming method of a semiconductor element employing the same.

As the integration of integrated circuits increases, the size of the device also decreases.For example, the gate length decreased from 0.5 µm in 16 MB to 0.35 µm in 64 MB DRAM and 0.3 to 0.25 µm in 256 MB DRAM. Can be.

For this reason, the aspect ratio of the contact hole also increases, and at present, a process of forming a wiring of a semiconductor device is being performed by applying an aluminum flowing process.

Although some wiring forming processes of the semiconductor device to which the aluminum flowing process is applied have been presented, only a brief description will be given here of a wiring forming method through a three-step deposition method and a heat treatment process directly related to the present invention. The wiring formation method of the semiconductor element based on this is shown below.

Within the first station of the semiconductor manufacturing apparatus with the first to third film deposition stations, a part of the total thickness of the aluminum layer (or aluminum alloy layer) to be used as wiring on the semiconductor substrate on which the contact holes are formed, for example, 1 About / 4 is deposited at room temperature, a second quarter thick aluminum layer is again deposited at low temperature in the second station, and the remaining 2/4 thick aluminum layer is again deposited at low temperature in the third station. Thereafter, the semiconductor substrate on which the aluminum layer is deposited is mounted in a tube, and heat treated at a temperature of about 400 ° C. for about 50 minutes so that the deposited aluminum flows into the contact hole, thereby completing the process. As a result, the metal wiring of the form in which aluminum (or an aluminum alloy) fills in the contact hole is completed.

However, when the wiring of the semiconductor device is formed in the same manner as above, first, since the film deposition process and the heat treatment process are performed in separate apparatuses, the operation copper line becomes a problem during the process, and thus the process progress time (or TAT: turn around time) ), And a long time (about 50 minutes) due to the high temperature heat treatment process, the hillock is generated on the upper surface and side walls of the contact wiring to bridge the metal wiring Since is caused, the phenomenon that the wiring characteristics of the semiconductor device is lowered.

Accordingly, a first object of the present invention is to provide a semiconductor capable of directly flowing current to an aluminum layer (or an aluminum alloy layer) on a semiconductor substrate mounted on a heater block using a probe attached to a cathode electrode. In providing a manufacturing apparatus.

According to a second aspect of the present invention, a wiring of a semiconductor device is formed in such a manner that a current is flowed into the film immediately after deposition of an aluminum layer (or an aluminum alloy layer) using the semiconductor manufacturing apparatus to melt the aluminum layer in an instant. The present invention provides a method for forming a wiring of a semiconductor device to reduce process progress time and improve wiring characteristics.

In order to achieve the first object, in the present invention, in the semiconductor manufacturing apparatus having a first to third film deposition station, the third film deposition station is spaced apart from the cathode electrode and the cathode electrode at a predetermined interval A semiconductor manufacturing apparatus is provided, which is disposed at positions opposite to each other in a state, and includes a heater block on which a semiconductor substrate is mounted, and at least one probe attached to an edge of the cathode electrode.

In order to achieve the second object, in the present invention, after depositing an insulating film on a semiconductor substrate, the step of selectively etching the insulating film to expose a predetermined portion of the surface of the substrate to form a contact hole, and the first film quality of the semiconductor manufacturing apparatus Forming a first metal wiring layer on the insulating film and the substrate in the deposition station, and forming a second metal wiring layer on the first metal wiring layer in the second film quality deposition station of the semiconductor manufacturing apparatus. And a second film deposition station forming a semiconductor manufacturing apparatus with at least one probe attached along an edge of a cathode electrode, wherein the probe is disposed to be spaced apart from the second metal wiring layer by a predetermined distance. Forming a third metal wiring layer on the wiring layer, and the probe is wound on the third metal layer without breaking a vacuum. After contact, the first to the wiring formation method of a semiconductor device comprising the step of forming the metal wiring, the current flow for a predetermined time in the third metal wire layer is provided.

In the present invention, an aluminum layer or an aluminum alloy layer (eg, Al-Cu, Al-Si-Cu, Al-Ge) is used as the first to third metal wiring layer materials, and the total thickness of the wiring layer to be formed is When T, the first metal wiring layer is formed to a thickness of 1 / 4T, the second metal wiring layer is formed to a thickness of 1 / 4T, the third metal wiring layer is formed to a thickness of 2 / 4T.

The preferred thickness of the first metal wiring layer is 2500 kPa, the wiring layer is formed by sputtering at room temperature of 20 to 25 ° C., the thickness of the preferred second metal wiring layer is 2500 kPa, and the wiring layer is sputtered at a low temperature of 250 ± 10 ° C. The thickness of the third metal wiring layer is 5000 kPa, and the wiring layer is formed by sputtering at a low temperature of 250 ± 10 ° C.

At this time, the time for flowing a current to the first to third metal wiring layer is within 10 seconds, the preferred current flow time is 1 to 2 seconds.

When the aluminum wiring (or aluminum alloy wiring) is formed by using the above-mentioned semiconductor manufacturing apparatus, a method of melting the metal wiring film instantaneously by flowing a current in the same station without any equipment for performing high temperature heat treatment. Therefore, aluminum wiring (or aluminum alloy wiring) can be formed. As a result, it is possible to shorten the process progress time, thereby minimizing the generation of heel caused by the heat treatment process for a long time.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

The present invention forms an aluminum wire (or an aluminum alloy wire) of a semiconductor device by using a method of flowing a current instead of the conventional heat treatment method, so that the semiconductor manufacturing apparatus for film quality deposition without a separate heat treatment device (for example, a tube) As a technology that focuses on enabling the aluminum flowing process to proceed within the process, the process progress time can be shortened and the wiring characteristics can be improved. This will be described with reference to the drawings shown in FIGS. 1 to 3.

1 is a block diagram schematically showing the structure of a semiconductor manufacturing apparatus presented in the present invention, and FIG. 2 is a cross-sectional view showing a third station structure of the semiconductor manufacturing apparatus shown in FIG. 1, and FIGS. 3A to 3. 3C shows a process flowchart showing a method of forming a wiring of a semiconductor element using the semiconductor manufacturing apparatus of FIG. 1.

Referring to FIG. 1, in the semiconductor manufacturing apparatus according to the present invention, the first to third film deposition stations A, B, and C of the small size are separated from each other in one large size reaction chamber 100. It can be seen that the structure is arranged so that the film deposition process is performed independently of each other in each station.

Here, the first and the second film deposition stations (A), (B) has a structure in which the cathode electrode and the heater block are disposed so as to face each other in the upper and lower portions as in the prior art, both ends of the cathode electrode and the heater block When a voltage is applied to the film, deposition of a film is performed in such a manner that a processing material (for example, aluminum or an aluminum alloy) is sputtered onto the semiconductor substrate s mounted on the heater block.

On the other hand, as shown in the cross-sectional view of FIG. 2, the third film deposition station C has the same position as that in which the cathode electrode 102 and the heater block 104 are disposed at positions opposite to each other. The difference is that at least one or more (eg, 3 to 4) probes 106 are attached to the cathode electrode 102 at a predetermined interval from each other.

In this case, the probe 106 made of a metal material is attached along the edge of the cathode electrode 102. The probe 110 may be formed at a portion corresponding to a side range of the semiconductor substrate s (where a pattern is not formed). ) Is to be contacted. As such, the arrangement of the probe 106 in contact with the side range of the semiconductor substrate s causes damage to the wiring layer of the portion when the probe 106 is in direct contact with other parts except the side range. Not only does not cause the phenomenon, but the inconvenience of having to adjust the length of the probe 106 separately by the gear method due to the step problem between each pattern.

Therefore, in the third station C, the cathode electrode 102 and the heater block 104 are removed without vacuum in the state where the deposition of the processing material is completed on the entire surface of the substrate s including the side range by the sputtering method. When high frequency power is applied to both ends, current flows to the heater block 104 through the probe 106, and thus the processing material (for example, aluminum or aluminum alloy) deposited on the side range side of the substrate s ( The current flows to 108 instantaneously (eg, within 10 seconds) such that metal wiring (eg, aluminum wiring or aluminum alloy wiring) is formed in such a way that the workpiece material 108 flows as a whole.

Referring to the process steps shown in FIGS. 3A to 3C, a method of forming a wiring of a semiconductor device using the semiconductor manufacturing apparatus having the above structure will be described in detail as follows.

As a first step, as illustrated in FIG. 3A, an oxide film, which is an insulating film 110, is deposited on a semiconductor substrate s, for example, a silicon substrate, and then a semiconductor element to be formed on the substrate s and a wiring metal to transmit a signal thereto. The insulating layer 110 of the portion to be connected is selectively etched to form a contact hole to expose a predetermined portion of the surface of the substrate s.

Subsequently, the substrate s having contact holes is mounted in the first film deposition station A of the semiconductor manufacturing apparatus shown in FIG. 1, and the insulating film 110 is formed by sputtering at a room temperature of 20 to 25 ° C. ) And an aluminum layer or an aluminum alloy layer (eg, Al-Cu, Al-Si-Cu, Al-Ge, etc.) are deposited on the substrate s and the first metal wiring layer 112a. In this case, the first metal wiring layer 112a is formed to have a thickness of 1 / 4T when the total thickness of the wiring layer to be formed is T. The preferred thickness of the first metal wiring layer 112a may be 2500 kPa.

As a second step, as shown in FIG. 3B, the substrate s on which the first metal wiring layer 112a is deposited is taken out of the first film deposition station A and mounted in the second film deposition station B. As shown in FIG. Then, an aluminum layer or an aluminum alloy layer is deposited as the second metal wiring layer 112b on the first metal wiring layer 112a by sputtering at a low temperature of 250 ± 10 ° C. In this case, the second metal wiring layer 112b is formed to have a thickness of 1 / 4T, but the thickness of the second metal wiring layer 112b is preferably 2500 kPa.

As a third step, as shown in FIG. 3C, the substrate s on which the first and second metal wiring layers 112c are deposited is taken out of the second film deposition station B, and the third film deposition station C is provided. ), And an aluminum layer or an aluminum alloy layer is deposited as the third metal wiring layer 112c on the second metal wiring layer 112b by sputtering at a low temperature of 250 ± 10 ° C. At this time, the third metal wiring layer 112c is formed to have a thickness of 2 / 4T, but the thickness of the preferred second metal wiring layer 112b is 5000 kPa.

Here, in the deposition process of the third metal wiring layer 112c, when the probe 106 is in contact with the semiconductor substrate s, a current flows toward the heater block 104 through the probe 106 and is blocked. Since the deposition process is not performed, the gap between the cathode electrode 102 and the heater block 104 should be maintained to some extent so that the probe 106 does not touch the semiconductor substrate s during the film deposition process.

Subsequently, the plurality of cathode electrodes 102 in the third film deposition station C are lowered by a predetermined height by using a bearing device (not shown) integrally connected to the electrodes 102 without vacuum. Probes 106 are brought into contact with the third metal wiring layer 112c of the semiconductor substrate s mounted on the heater block 104.

In this state, high frequency power is applied to both ends of the cathode electrode 102 and the heater block 104 to instantaneously flow current to the heater block 104 through the probe 106. The current flow time applied during this process is 1 to 2 seconds.

As a result, the current flows instantaneously (for example, for 1 to 2 seconds) to the first to third metal wiring layers 112a, 112b, and 112c formed in the portion corresponding to the side range of the substrate s. The metal wiring 112 in which the aluminum or aluminum alloy layer having a thickness of 10000 μs constituting the first to third metal wiring layers 112a, 112b, and 112c fills the contact hole is completed.

When the process proceeds as described above, the heat treatment process for performing the aluminum flowing process does not have to be carried out separately using a separate equipment, it is possible to reduce the process required time. In addition, since the current flow time (within 10 seconds) is very short compared to the conventional heat treatment process time (about 50 minutes), it is possible to minimize the occurrence of heel in the metal wiring layer caused by a long heat treatment process, It is possible to suppress the occurrence of bridges between metal wirings.

As described above, according to the present invention, an instantaneous current is applied to the first to third metal wiring layers on the semiconductor substrate by using at least one or more probes attached along the edge of the cathode electrode in the third film deposition station constituting the semiconductor manufacturing apparatus. By forming the metal wiring of the semiconductor element in a way that flows through the first, first, the wiring forming process is possible without the heat treatment process using a separate manufacturing equipment to reduce the process time loss, and second, the heat treatment process caused by It is possible to minimize the occurrence of hillock in the wiring layer, thereby improving the wiring reliability of the semiconductor device.

1 is a block diagram schematically showing the structure of a semiconductor manufacturing apparatus presented in the present invention;

2 is a cross-sectional view showing a third station structure of the semiconductor manufacturing apparatus shown in FIG. 1;

3A to 3C are process flowcharts illustrating a wiring forming method of a semiconductor device using the semiconductor manufacturing apparatus of FIG. 1.

Claims (14)

A semiconductor manufacturing apparatus comprising first to third film deposition stations, wherein the third film deposition stations are disposed at positions opposite to each other with a cathode electrode spaced apart from the cathode electrode at a predetermined interval. And a heater block to be mounted and at least one probe attached along an edge of the cathode electrode. The semiconductor manufacturing apparatus of claim 1, wherein the probe is made of a metallic material. The semiconductor manufacturing apparatus of claim 1, wherein three to four probes are attached to each other at a predetermined interval from each other. Depositing an insulating film on a semiconductor substrate and then selectively etching the insulating film to expose a predetermined portion of the surface of the substrate to form a contact hole; Forming a first metal wiring layer on the insulating film and the substrate in a first film quality deposition station of a semiconductor manufacturing apparatus; Forming a second metal wiring layer on the first metal wiring layer in a second film quality deposition station of the semiconductor manufacturing apparatus; In a third film deposition station constituting a semiconductor manufacturing apparatus having at least one probe attached along an edge of a cathode electrode, the probe is disposed on the second metal wiring layer with the probe spaced apart from the second metal wiring layer by a predetermined distance. Forming a third metal wiring layer in the Contacting the probe with the third metal layer without breaking a vacuum, and then flowing a current through the first to third metal wiring layers for a predetermined time to form a metal wiring. . The wiring forming method of claim 4, wherein the first to third metal wiring layers are formed of an aluminum layer or an aluminum alloy layer. The method of claim 5, wherein the aluminum alloy layer is one selected from Al—Cu, Al—Si—Cu, and Al—Ge. 5. The method of forming a wiring of a semiconductor device according to claim 4, wherein the first metal wiring layer is formed to a thickness of 1 / 4T (where T represents the total thickness of the metal wiring). 5. The method of forming a wiring of a semiconductor device according to claim 4, wherein the second metal wiring layer is formed to a thickness of 1 / 4T (where T represents the total thickness of the metal wiring). The wiring forming method of a semiconductor device according to claim 4, wherein the third metal wiring layer is formed to a thickness of 2 / 4T. (Where T represents the total thickness of the metal wiring). The wiring forming method of a semiconductor device according to claim 4, wherein the first to third metal wiring layers are formed by a sputtering method. The method of claim 4, wherein the first metal wiring layer is formed at a room temperature of 20 to 25 ° C. 6. The method of claim 4, wherein the second metal wiring layer is formed at a low temperature of 250 ± 10 ° C. 6. The method of claim 4, wherein the third metal wiring layer is formed at a low temperature of 250 ± 10 ° C. 6. The method for forming a wiring of a semiconductor device according to claim 4, wherein a time for flowing a current through the first to third metal wiring layers is within 10 seconds.

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