KR100454618B1 - 전자비임에의한수소실세스퀴옥산수지의경화법 - Google Patents

전자비임에의한수소실세스퀴옥산수지의경화법 Download PDF

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Publication number
KR100454618B1
KR100454618B1 KR1019960061172A KR19960061172A KR100454618B1 KR 100454618 B1 KR100454618 B1 KR 100454618B1 KR 1019960061172 A KR1019960061172 A KR 1019960061172A KR 19960061172 A KR19960061172 A KR 19960061172A KR 100454618 B1 KR100454618 B1 KR 100454618B1
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KR
South Korea
Prior art keywords
coating
electron beam
substrate
resin
hydrogen silsesquioxane
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019960061172A
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English (en)
Korean (ko)
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KR970052882A (ko
Inventor
로버트 챨스 캐밀러티
이르판 사다트
마이클 토마스
Original Assignee
내셔널 세미콘덕터 코포레이션
다우 코닝 코포레이션
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Publication of KR970052882A publication Critical patent/KR970052882A/ko
Application granted granted Critical
Publication of KR100454618B1 publication Critical patent/KR100454618B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/068—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using ionising radiations (gamma, X, electrons)
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0045—Irradiation; Radiation, e.g. with UV or IR
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5035—Silica
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6539—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
KR1019960061172A 1995-12-04 1996-12-03 전자비임에의한수소실세스퀴옥산수지의경화법 Expired - Lifetime KR100454618B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/566,820 1995-12-04
US08/566,820 US5609925A (en) 1995-12-04 1995-12-04 Curing hydrogen silsesquioxane resin with an electron beam

Publications (2)

Publication Number Publication Date
KR970052882A KR970052882A (ko) 1997-07-29
KR100454618B1 true KR100454618B1 (ko) 2004-12-31

Family

ID=24264508

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960061172A Expired - Lifetime KR100454618B1 (ko) 1995-12-04 1996-12-03 전자비임에의한수소실세스퀴옥산수지의경화법

Country Status (5)

Country Link
US (1) US5609925A (https=)
EP (1) EP0778612B1 (https=)
JP (1) JP4015214B2 (https=)
KR (1) KR100454618B1 (https=)
DE (1) DE69637166T2 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6607991B1 (en) * 1995-05-08 2003-08-19 Electron Vision Corporation Method for curing spin-on dielectric films utilizing electron beam radiation
KR100238252B1 (ko) * 1996-09-13 2000-01-15 윤종용 Sog층 큐어링방법 및 이를 이용한 반도체장치의 절연막제조방법
EP0860462A3 (en) * 1997-02-24 1999-04-21 Dow Corning Toray Silicone Company Limited Composition and method for the formation of silica thin films
US6080526A (en) * 1997-03-24 2000-06-27 Alliedsignal Inc. Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
EP0881668A3 (en) 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Deposition of an electrically insulating thin film with a low dielectric constant
SG71147A1 (en) 1997-08-29 2000-03-21 Dow Corning Toray Silicone Method for forming insulating thin films
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US6361837B2 (en) 1999-01-15 2002-03-26 Advanced Micro Devices, Inc. Method and system for modifying and densifying a porous film
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6582777B1 (en) * 2000-02-17 2003-06-24 Applied Materials Inc. Electron beam modification of CVD deposited low dielectric constant materials
JP2001291427A (ja) * 2000-04-06 2001-10-19 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
US6444136B1 (en) * 2000-04-25 2002-09-03 Newport Fab, Llc Fabrication of improved low-k dielectric structures
US7063919B2 (en) * 2002-07-31 2006-06-20 Mancini David P Lithographic template having a repaired gap defect method of repair and use
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US20060158101A1 (en) * 2003-03-04 2006-07-20 Dow Corning Corporation Organic light-emitting diode
TWI240959B (en) 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US7112617B2 (en) * 2003-04-22 2006-09-26 International Business Machines Corporation Patterned substrate with hydrophilic/hydrophobic contrast, and method of use
US7282241B2 (en) * 2003-04-22 2007-10-16 International Business Machines Corporation Patterned, high surface area substrate with hydrophilic/hydrophobic contrast, and method of use
EP1475668A1 (en) * 2003-05-09 2004-11-10 ASML Netherlands B.V. Method of preparing components for a lithographic apparatus
FR2872503B1 (fr) * 2004-07-05 2006-09-22 Commissariat Energie Atomique Procede de fabrication d'une ebauche de biopuce, ebauche et biopuce
US7803668B2 (en) 2006-02-24 2010-09-28 Stmicroelectronics (Crolles 2) Sas Transistor and fabrication process
FR2897981B1 (fr) * 2006-02-24 2008-05-30 St Microelectronics Crolles 2 Procede de fabrication de transistor et transistor
JP5149512B2 (ja) * 2007-02-02 2013-02-20 東レ・ダウコーニング株式会社 液状硬化性組成物、コーテイング方法、無機質基板および半導体装置
US20080206602A1 (en) * 2007-02-28 2008-08-28 Katine Jordan A Nanoimprinting of topography for patterned magnetic media
WO2008144923A1 (en) * 2007-05-31 2008-12-04 The Governors Of The University Of Alberta Nc-si/sio2 coatings and direct lithographic patterning thereof
US20140178698A1 (en) 2012-12-21 2014-06-26 3M Innovative Properties Company Curable silsesquioxane polymers, compositions, articles, and methods
CN104870584B (zh) 2012-12-21 2017-07-07 3M创新有限公司 可固化倍半硅氧烷聚合物、组合物、制品和方法
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
WO2015088932A1 (en) 2013-12-09 2015-06-18 3M Innovative Properties Company Curable silsesquioxane polymers, compositions, articles, and methods
US10370564B2 (en) 2014-06-20 2019-08-06 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods
US10392538B2 (en) 2014-06-20 2019-08-27 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods
JP2017528577A (ja) 2014-09-22 2017-09-28 スリーエム イノベイティブ プロパティズ カンパニー シルセスキオキサンポリマーコア、シルセスキオキサンポリマー外層、及び反応性基を含む硬化性ポリマー
US9957416B2 (en) 2014-09-22 2018-05-01 3M Innovative Properties Company Curable end-capped silsesquioxane polymer comprising reactive groups
EP3671812B1 (en) * 2018-12-19 2022-02-09 IMEC vzw A method for bonding and interconnecting semiconductor chips

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808653A (en) * 1986-12-04 1989-02-28 Dow Corning Corporation Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5238787A (en) * 1991-04-22 1993-08-24 Dow Corning Corporation Photodelineable coatings from hydrogen silsesquioxane resin
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
KR100510872B1 (ko) * 2003-01-23 2005-08-26 한국타이어 주식회사 공기입 래디얼 타이어
KR100647965B1 (ko) * 1999-09-24 2006-11-17 에아.워타 가부시키가이샤 극저온가스 분리장치

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH492948A (fr) 1968-09-13 1970-06-30 Rador S A Bande pour l'obtention d'un élément barbelé
US3615272A (en) 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
DE2302148C2 (de) * 1972-01-18 1983-02-10 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven Verfahren zur Herstellung eines Phosphorsilicatglasschichtmusters
JPS59178749A (ja) 1983-03-30 1984-10-11 Fujitsu Ltd 配線構造体
JPS6086017A (ja) 1983-10-17 1985-05-15 Fujitsu Ltd ポリハイドロジエンシルセスキオキサンの製法
DE3402317A1 (de) * 1984-01-24 1985-07-25 Wacker-Chemie GmbH, 8000 München Organopolysiloxane, verfahren zu ihrer herstellung und verwendung dieser organopolysiloxane
JPS63107122A (ja) 1986-10-24 1988-05-12 Fujitsu Ltd 凹凸基板の平坦化方法
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
US4847162A (en) * 1987-12-28 1989-07-11 Dow Corning Corporation Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia
US5336532A (en) * 1989-02-21 1994-08-09 Dow Corning Corporation Low temperature process for the formation of ceramic coatings
US4999397A (en) 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5010159A (en) 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
US5262201A (en) * 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
US5063267A (en) 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials
US5145723A (en) * 1991-06-05 1992-09-08 Dow Corning Corporation Process for coating a substrate with silica
US5436029A (en) * 1992-07-13 1995-07-25 Dow Corning Corporation Curing silicon hydride containing materials by exposure to nitrous oxide
CA2104340A1 (en) * 1992-08-31 1994-03-01 Grish Chandra Hermetic protection for integrated circuits
US5441765A (en) * 1993-09-22 1995-08-15 Dow Corning Corporation Method of forming Si-O containing coatings

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808653A (en) * 1986-12-04 1989-02-28 Dow Corning Corporation Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5238787A (en) * 1991-04-22 1993-08-24 Dow Corning Corporation Photodelineable coatings from hydrogen silsesquioxane resin
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
KR100647965B1 (ko) * 1999-09-24 2006-11-17 에아.워타 가부시키가이샤 극저온가스 분리장치
KR100510872B1 (ko) * 2003-01-23 2005-08-26 한국타이어 주식회사 공기입 래디얼 타이어

Also Published As

Publication number Publication date
KR970052882A (ko) 1997-07-29
EP0778612B1 (en) 2007-07-18
EP0778612A3 (en) 2000-02-02
DE69637166D1 (de) 2007-08-30
EP0778612A2 (en) 1997-06-11
JP4015214B2 (ja) 2007-11-28
DE69637166T2 (de) 2008-04-03
US5609925A (en) 1997-03-11
JPH09175810A (ja) 1997-07-08

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