KR100421918B1 - 평면형 칼라 음극선관의 패널 및 그 제조방법 - Google Patents
평면형 칼라 음극선관의 패널 및 그 제조방법 Download PDFInfo
- Publication number
- KR100421918B1 KR100421918B1 KR10-2002-0011649A KR20020011649A KR100421918B1 KR 100421918 B1 KR100421918 B1 KR 100421918B1 KR 20020011649 A KR20020011649 A KR 20020011649A KR 100421918 B1 KR100421918 B1 KR 100421918B1
- Authority
- KR
- South Korea
- Prior art keywords
- panel
- cathode ray
- ray tube
- color cathode
- thin film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 23
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 23
- 239000010937 tungsten Substances 0.000 claims abstract description 23
- -1 tungsten nitride Chemical class 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 14
- 238000000576 coating method Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004040 coloring Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 208000003464 asthenopia Diseases 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/867—Means associated with the outside of the vessel for shielding, e.g. magnetic shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/863—Passive shielding means associated with the vessel
- H01J2229/8635—Antistatic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2229/00—Details of cathode ray tubes or electron beam tubes
- H01J2229/863—Passive shielding means associated with the vessel
- H01J2229/8636—Electromagnetic shielding
Landscapes
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Abstract
Description
Claims (9)
- 패널 글래스 위에 텅스텐 나이트라이드(WNx)의 화합물이 포함된 박막을 형성시킨 것을 특징으로 하는 평면형 칼라 음극선관의 패널.
- 제 1 항에 있어서, 상기 텅스텐 나이트라이드 박막 위에 실리콘 디옥사이드를 형성시킨 것을 특징으로 하는 평면형 칼라 음극선관의 패널.
- 제 1항에 있어서, 상기 텅스텐 나이트라이드 박막층의 두께가 20∼120nm인 것을 특징으로 하는 평면형 칼라 음극선관의 패널.
- 제 2항에 있어서, 상기 실리콘 다이옥사이드 박막층의 두께가 20∼120nm인 것을 특징으로 하는 평면형 칼라 음극선관의 패널.
- 평면형 칼라 음극선관의 패널외면에 저반사 및 대전방지를 위해 진공과 실온상태에서 패널 글래스의 가열없이 텅스텐 나이트라이드(WNx)를 박막증착함을 포함하는 평면형 칼라 음극선관의 패널 제조방법
- 제 5 항에 있어서,상기 텅스텐 나이트라이드(WNx)는 텅스텐을 주성분으로 한 타겟에 증착하는과정에서 질소개스를 첨가한 것을 특징으로 하는 평면형 칼라 음극선관의 패널 제조방법.
- 제 5 항에 있어서,상기 텅스텐 나이트라이드(WNx)를 박막증착한 후, 그 위에 실리콘 디옥사이드를 박막증착한 것을 특징으로 하는 평면형 칼라 음극선관의 패널 제조방법
- 제 7 항에 있어서,상기 실리콘 디옥사이드는 실리콘을 주성분으로 한 타겟에 증착시 산소개스를 첨가하여 증착시켜 저반사 특성과 막강도를 향상시킨 것을 특징으로 하는 평면형 칼라 음극선관의 패널 제조방법
- 제 5 항 또는 제 7 항에 있어서,상기 증착되는 박막들은 그 두께가 20~120nm의 범위내로 증착된 것을 특징으로 하는 평면형 칼라 음극선관의 패널 제조방법
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0011649A KR100421918B1 (ko) | 2002-03-05 | 2002-03-05 | 평면형 칼라 음극선관의 패널 및 그 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0011649A KR100421918B1 (ko) | 2002-03-05 | 2002-03-05 | 평면형 칼라 음극선관의 패널 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030072088A KR20030072088A (ko) | 2003-09-13 |
KR100421918B1 true KR100421918B1 (ko) | 2004-03-11 |
Family
ID=32223479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0011649A KR100421918B1 (ko) | 2002-03-05 | 2002-03-05 | 평면형 칼라 음극선관의 패널 및 그 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100421918B1 (ko) |
-
2002
- 2002-03-05 KR KR10-2002-0011649A patent/KR100421918B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20030072088A (ko) | 2003-09-13 |
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