KR100384551B1 - 조광시스템 - Google Patents

조광시스템 Download PDF

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Publication number
KR100384551B1
KR100384551B1 KR1019950016072A KR19950016072A KR100384551B1 KR 100384551 B1 KR100384551 B1 KR 100384551B1 KR 1019950016072 A KR1019950016072 A KR 1019950016072A KR 19950016072 A KR19950016072 A KR 19950016072A KR 100384551 B1 KR100384551 B1 KR 100384551B1
Authority
KR
South Korea
Prior art keywords
dimming
axicon
dimming system
axicons
zoom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950016072A
Other languages
English (en)
Korean (ko)
Other versions
KR960001786A (ko
Inventor
요하네스방글러
게랄트리히터
Original Assignee
칼-짜이스-스티프퉁 트레이딩 에즈 칼 짜이스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 칼-짜이스-스티프퉁 트레이딩 에즈 칼 짜이스 filed Critical 칼-짜이스-스티프퉁 트레이딩 에즈 칼 짜이스
Publication of KR960001786A publication Critical patent/KR960001786A/ko
Application granted granted Critical
Publication of KR100384551B1 publication Critical patent/KR100384551B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B15/00—Optical objectives with means for varying the magnification
    • G02B15/02—Optical objectives with means for varying the magnification by changing, adding, or subtracting a part of the objective, e.g. convertible objective
    • G02B15/04—Optical objectives with means for varying the magnification by changing, adding, or subtracting a part of the objective, e.g. convertible objective by changing a part
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/001—Axicons, waxicons, reflaxicons
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70183—Zoom systems for adjusting beam diameter

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
KR1019950016072A 1994-06-17 1995-06-16 조광시스템 Expired - Lifetime KR100384551B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DEP4421053.1 1994-06-17
DE4421053A DE4421053A1 (de) 1994-06-17 1994-06-17 Beleuchtungseinrichtung
DEP4441947.3 1994-11-25
DE4441947A DE4441947A1 (de) 1994-06-17 1994-11-25 Beleuchtungseinrichtung

Publications (2)

Publication Number Publication Date
KR960001786A KR960001786A (ko) 1996-01-25
KR100384551B1 true KR100384551B1 (ko) 2003-10-11

Family

ID=6520742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016072A Expired - Lifetime KR100384551B1 (ko) 1994-06-17 1995-06-16 조광시스템

Country Status (3)

Country Link
KR (1) KR100384551B1 (enExample)
DE (3) DE4421053A1 (enExample)
TW (1) TW298629B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100563124B1 (ko) * 1998-04-08 2006-03-21 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6060735A (en) * 1996-09-06 2000-05-09 Kabushiki Kaisha Toshiba Thin film dielectric device
US7130129B2 (en) 1996-12-21 2006-10-31 Carl Zeiss Smt Ag Reticle-masking objective with aspherical lenses
EP0949541B1 (en) * 1998-04-08 2006-06-07 ASML Netherlands B.V. Lithography apparatus
DE19855108A1 (de) 1998-11-30 2000-05-31 Zeiss Carl Fa Mikrolithographisches Reduktionsobjektiv, Projektionsbelichtungsanlage und -Verfahren
US6583937B1 (en) 1998-11-30 2003-06-24 Carl-Zeiss Stiftung Illuminating system of a microlithographic projection exposure arrangement
TW587199B (en) 1999-09-29 2004-05-11 Asml Netherlands Bv Lithographic method and apparatus
DE10109592C2 (de) * 2001-02-28 2003-10-30 Zeiss Carl Jena Gmbh Anordnung zum Erzeugen eines leuchtenden Feldes
DE10144243A1 (de) 2001-09-05 2003-03-20 Zeiss Carl Zoom-System für eine Beleuchtungseinrichtung
DE10144244A1 (de) 2001-09-05 2003-03-20 Zeiss Carl Zoom-System, insbesondere für eine Beleuchtungseinrichtung
US7006295B2 (en) 2001-10-18 2006-02-28 Asml Holding N.V. Illumination system and method for efficiently illuminating a pattern generator
US6775069B2 (en) * 2001-10-18 2004-08-10 Asml Holding N.V. Advanced illumination system for use in microlithography
US7079321B2 (en) 2001-10-18 2006-07-18 Asml Holding N.V. Illumination system and method allowing for varying of both field height and pupil
US6813003B2 (en) 2002-06-11 2004-11-02 Mark Oskotsky Advanced illumination system for use in microlithography
KR100431883B1 (ko) * 2001-11-05 2004-05-17 삼성전자주식회사 노광방법 및 투영 노광 장치
US7511886B2 (en) 2003-05-13 2009-03-31 Carl Zeiss Smt Ag Optical beam transformation system and illumination system comprising an optical beam transformation system
WO2005024516A2 (de) 2003-08-14 2005-03-17 Carl Zeiss Smt Ag Beleuchtungseinrichtung für eine mikrolithographische projektionsbelichtungsanlage
DE102004015148B4 (de) * 2004-03-27 2007-04-19 Fuhrberg, Teichmann, Windolph LISA laser products oHG Faserlaser mit einer Optischen Vorrichtung zur Formung der Intensitätsverteilung eines Lichtstrahlenbündels
WO2007050743A2 (en) * 2005-10-27 2007-05-03 Yale University An optical system for illumination of an evanescent field
WO2013013947A2 (en) 2011-07-26 2013-01-31 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus, and microlithographic exposure method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100563124B1 (ko) * 1998-04-08 2006-03-21 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치

Also Published As

Publication number Publication date
DE4441947A1 (de) 1996-05-30
KR960001786A (ko) 1996-01-25
DE4421053A1 (de) 1995-12-21
DE59507458D1 (de) 2000-01-27
TW298629B (enExample) 1997-02-21

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