KR100369349B1 - Apparatus for finger-print recognition - Google Patents
Apparatus for finger-print recognition Download PDFInfo
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- KR100369349B1 KR100369349B1 KR10-2000-0086607A KR20000086607A KR100369349B1 KR 100369349 B1 KR100369349 B1 KR 100369349B1 KR 20000086607 A KR20000086607 A KR 20000086607A KR 100369349 B1 KR100369349 B1 KR 100369349B1
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- sensing
- multiple dielectric
- fingerprint recognition
- thickness
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/004—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring coordinates of points
Abstract
본 발명은 다중 유전막의 두께를 효과적으로 측정하도록 한 지문인식용 집적소자에 관한 것으로, 소정 거리(d)를 두고 이격되어 서로 인접한 감지금속, 상기 감지금속을 절연시키는 소정 두께(t)를 갖고 상기 감지금속의 소정 부분을 오픈시키되 상기 감지금속과 동일한 너비(W)를 갖는 다중 유전막, 및 상기 다중 유전막상에 형성되며 상기 감지금속의 끝단에 각각 소정 폭(L) 오버랩된 텅스텐패드를 포함하여 이루어지며, 상기 텅스텐패드를 경유하여 상기 오픈된 감지금속 사이를 전기적으로 커플링시켜 상기 다중 유전막의 두께를 측정한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated fingerprint recognition device capable of effectively measuring the thickness of a multi-layer dielectric film. Opening a predetermined portion of the metal, but comprises a multiple dielectric film having the same width (W) as the sensing metal, and a tungsten pad formed on the multiple dielectric film and overlapping a predetermined width (L) at each end of the sensing metal, The thickness of the multiple dielectric layers is measured by electrically coupling between the open sensing metals via the tungsten pad.
Description
본 발명은 지문 인식용 집적소자에 관한 것으로, 특히 감지 금속(Sense metal)상의 다중 유전막(Multi-dielectric)의 두께를 효율적으로 측정하도록 테스트 패턴(Test pattern)을 구비하는 지문인식용 집적소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated fingerprint recognition device, and more particularly, to a fingerprint recognition integrated device having a test pattern for efficiently measuring the thickness of a multi-dielectric layer on a sense metal. will be.
통상적으로 지문인식용 집적소자(Fingerprint recognition integratedcircuit)는 감지 금속(Sense metal)과 정전기(Electro Static Discharge) 보호용 패드인 텅스텐(W)으로 이루어진다.Typically, a fingerprint recognition integrated circuit is composed of a sense metal and tungsten (W), which is an electrostatic discharge protection pad.
도 1은 종래기술에 따른 지문인식용 집적소자를 도시한 소자 단면도이다.1 is a cross-sectional view showing a device for fingerprint recognition integrated device according to the prior art.
도 1에 도시된 바와 같이, 종래 지문인식용 집적소자는 소정 공정이 완료된 반도체 기판(도시 생략)상에 층간절연막(IMD)(11)이 형성되고, 층간절연막(11)상에 지문인식용 감지금속(12)이 형성되며, 감지금속(12)은 다중 유전막(13)인 산화막과 질화막에 의해 절연되며, 다중 유전막(13)상에 정전기 보호막으로서 텅스텐패드 (14)가 형성된다.As shown in FIG. 1, in the conventional fingerprint recognition integrated device, an interlayer insulating film (IMD) 11 is formed on a semiconductor substrate (not shown) where a predetermined process is completed, and a fingerprint recognition detection is performed on the interlayer insulating film 11. The metal 12 is formed, and the sensing metal 12 is insulated by an oxide film and a nitride film, which are multiple dielectric films 13, and a tungsten pad 14 is formed on the multiple dielectric films 13 as an electrostatic protective film.
상술한 바와 같은 지문인식용 집적소자에서 감지금속(12)상의 다중 유전막 (13)의 두께(t1)를 측정하기 위해서는 정전기보호용 텅스텐패드(14)와 감지금속 (12)을 프로빙(Probing)하여 캐패시턴스(Capacitance)를 측정하였다. 그러나, 감지금속(12)과 텅스텐패드(14) 사이에는 15㎛ 이상의 단차가 발생하여 자동 프로빙 (Auto-probing)이 불가능하다.In the fingerprint recognition integrated device as described above, in order to measure the thickness t 1 of the multiple dielectric layers 13 on the sensing metal 12, the probing tungsten pad 14 and the sensing metal 12 are probed. Capacitance was measured. However, a step of 15 μm or more occurs between the sensing metal 12 and the tungsten pad 14, so that auto-probing is impossible.
한편, 다중 유전막의 캐패시턴스(C)는 다음 [수학식1]과 같다.On the other hand, the capacitance (C) of the multiple dielectric film is shown in Equation 1 below.
여기서, A는 면적, ε는 다중 유전막(13)의 유전율, t1는 다중 유전막(13)의두께를 나타낸다.Where A is the area, ε is the dielectric constant of the multiple dielectric film 13, and t 1 is the thickness of the multiple dielectric film 13.
이와 같은 다중 유전막의 캐패시턴스를 이용하여 다중 유전막의 두께를 측정하지만, 테스트 구조가 실제 칩에서의 셀구조와 다르며 기생 효과의 반영이 어려워 정확한 두께 측정이 어렵다.Although the thickness of the multiple dielectric layers is measured using the capacitance of the multiple dielectric layers, it is difficult to accurately measure the thickness because the test structure is different from the actual cell structure of the chip and the reflection of parasitic effects is difficult.
또한, 인라인 모니터링(In-line monitoring)이 불가능하여 감지금속(12)상의 다중 유전막 공정의 관리가 어려운 문제점이 있다.In addition, there is a problem in that it is difficult to manage multiple dielectric film processes on the sensing metal 12 because in-line monitoring is impossible.
본 발명은 상기 종래기술의 문제점을 해결하기 위해 안출한 것으로서, 실제 칩에서의 셀구조와 동일하며, 자동 프로빙이 가능하도록 하여 다중 유전막의 두께를 정확히 측정하는데 적합한 지문인식용 집적소자를 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the prior art, the same as the cell structure in the actual chip, and provides an automatic fingerprint recognition integrated device suitable for accurately measuring the thickness of the multiple dielectric film by enabling automatic probing. There is a purpose.
도 1은 종래기술에 따른 지문인식용 집적소자의 단면도,1 is a cross-sectional view of a fingerprint recognition integrated device according to the prior art,
도 2는 본 발명의 실시예에 따른 지문인식용 집적 소자의 단면도,2 is a cross-sectional view of an integrated fingerprint recognition device according to an embodiment of the present invention;
도 3는 본 발명의 실시예에 따른 지문인식용 집적 소자의 평면도.3 is a plan view of an integrated fingerprint recognition device according to an embodiment of the present invention.
*도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
21 : 층간절연막 22a, 22b : 감지금속21: interlayer insulating film 22a, 22b: sensing metal
23 : 다중 유전막 24 : 텅스텐패드23: multiple dielectric film 24: tungsten pad
상기의 목적을 달성하기 위한 본 발명의 지문인식용 집적소자는 소정 거리(d)를 두고 이격되어 서로 인접한 감지금속, 상기 감지금속을 절연시키는 소정 두께(t)를 갖고 상기 감지금속의 소정 부분을 오픈시키되 상기 감지금속과 동일한 너비(W)를 갖는 다중 유전막, 및 상기 다중 유전막상에 형성되며 상기 감지금속의 끝단에 각각 소정 폭(L) 오버랩된 텅스텐패드를 포함하여 이루어지며, 상기 텅스텐패드를 경유하여 상기 오픈된 감지금속 사이를 전기적으로 커플링시켜 상기 다중 유전막의 두께를 측정하는 것을 특징으로 한다.The fingerprint recognition integrated device of the present invention for achieving the above object has a sensing metal adjacent to each other spaced apart by a predetermined distance (d), a predetermined thickness (t) to insulate the sensing metal and a predetermined portion of the sensing metal. The tungsten pad is opened and includes a multiple dielectric film having the same width (W) as the sensing metal, and a tungsten pad formed on the multiple dielectric film and overlapping a predetermined width (L) at each end of the sensing metal. The thickness of the multiple dielectric layer is measured by electrically coupling between the open sensing metals via the via.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부 도면을 참조하여 설명하기로 한다.Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. .
도 2는 본 발명의 실시예에 따른 지문인식용 집적소자의 단면도이고, 도 3은 본 발명의 실시예에 따른 지문인식용 집적소자의 평면도이다.2 is a cross-sectional view of a fingerprint recognition integrated device according to an embodiment of the present invention, Figure 3 is a plan view of a fingerprint recognition integrated device according to an embodiment of the present invention.
도 2 및 도 3에 도시된 바와 같이, 소정 공정이 완료된 반도체기판상에 층간절연막(21)이 형성되고, 층간절연막(21)상에 소정 거리(d)를 두고 이격되어 서로 인접하는 감지금속(22a, 22b), 서로 인접한 감지금속(22a, 22b)을 절연시키는 산화막과 질화막 적층구조의 다중 유전막(23), 다중 유전막(23)상에 형성되며 인접한 감지금속(22a, 22b)의 끝단에 각각 소정 폭(L) 오버랩된 텅스텐패드(24)를 구비한다.As shown in FIGS. 2 and 3, an interlayer insulating film 21 is formed on a semiconductor substrate on which a predetermined process is completed, and the sensing metals spaced apart from each other by a predetermined distance d on the interlayer insulating film 21 are adjacent to each other ( 22a and 22b, formed on the multiple dielectric film 23 and the multiple dielectric film 23 having an oxide film and a nitride film stacked structure which insulate adjacent sensing metals 22a and 22b from each other and formed at the ends of adjacent sensing metals 22a and 22b, respectively. It is provided with the tungsten pad 24 overlapping the predetermined width | variety (L).
여기서, 감지금속(22a, 22b)과 텅스텐패드(24) 사이의 다중 유전막(23)은 소정 두께(t)를 가지며, 텅스텐패드(24)는 두 개의 감지금속(22a, 22b)에 소정 폭(L)을 갖고 그 끝단이 오버랩된다. 즉, 텅스텐패드(24)는 서로 인접한 두 감지금속(22a, 22b)에 모두 오버랩되며, 서로 인접한 감지금속(22a, 22b) 사이의 거리(d)를 다중 유전막(23) 두께(t2)보다 크게 하는 이유는, 측면 효과(Lateral effect)를 방지하기 위함이다.Here, the multi-layer dielectric film 23 between the sensing metals 22a and 22b and the tungsten pad 24 has a predetermined thickness t, and the tungsten pad 24 has a predetermined width (T) between the two sensing metals 22a and 22b. L) and the ends overlap. That is, the tungsten pad 24 overlaps both sensing metals 22a and 22b adjacent to each other, and the distance d between the sensing metals 22a and 22b adjacent to each other is greater than the thickness t 2 of the multi-layer dielectric film 23. The reason for making this large is to prevent the side effect.
그리고, 감지금속(22a, 22b)은 소정 너비(W)를 가지며 감지금속과 텅스텐패드는 동일한 너비를 갖는다.In addition, the sensing metals 22a and 22b have a predetermined width W, and the sensing metal and the tungsten pad have the same width.
상기와 같은 구성을 갖는 지문인식용 집적소자에서 다중 유전막의 캐패시턴스는ㄴ 다음 [수학식2]를 이용하여 측정한다.In the fingerprint recognition integrated device having the above configuration, the capacitance of the multiple dielectric layers is measured using Equation 2 below.
상술한 바와 같이, 본 발명의 실시예에서는 서로 인접한 감지금속(22a, 22b)의 소정 부분을 노출시키고, 텅스텐패드(24)를 경유하여 서로 인접한 감지금속(22a,22b) 사이의 노출된 부분을 전기적으로 커플링(Coupling)시켜 캐패시턴스를 측정한다.As described above, in the embodiment of the present invention, the exposed portions between the sensing metals 22a and 22b adjacent to each other are exposed, and the exposed portions between the sensing metals 22a and 22b adjacent to each other via the tungsten pad 24 are exposed. The coupling is measured electrically to measure the capacitance.
즉, 다중 유전막의 두께(t2)를 측정하기 위해 텅스텐패드와 감지금속을 프로빙하는 통상과 달리, 텅스텐패드를 경유하여 감지금속 사이를 전기적으로 커플링시키기 때문에 감지금속간 단차가 없어 자동 프로빙이 가능하다.That is, unlike the conventional probing of the tungsten pad and the sensing metal to measure the thickness (t 2 ) of the multi-layer dielectric film, since the electrical coupling between the sensing metal via the tungsten pad, there is no step between the sensing metal and automatic probing It is possible.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위 내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
상술한 바와 같은 본 발명의 지문인식용 집적소자는 다중유전막의 두께를 측정하기 위한 테스트 패턴의 구조 사이에 단차가 발생하지 않으므로 자동프로빙이 가능하고 대량 생산을 구현할 수 있는 효과가 있다.The fingerprint recognition integrated device of the present invention as described above does not have a step between the structure of the test pattern for measuring the thickness of the multi-dielectric film, so that automatic probing is possible and mass production can be implemented.
또한, 전기적 커플링을 이용하여 캐패시턴스를 측정하므로 다중유전막의 두께를 정확히 측정할 수 있느 효과가 있다.In addition, since the capacitance is measured using electrical coupling, the thickness of the multi-layer dielectric film can be accurately measured.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6354619A (en) * | 1986-08-26 | 1988-03-09 | Daicel Chem Ind Ltd | Capacitance type coordinate detector |
| JPH0396005A (en) * | 1989-09-07 | 1991-04-22 | Toshiba Corp | Piezoelectric thin film resonator |
| KR970059975A (en) * | 1996-01-26 | 1997-08-12 | 스코드 티 마이쿠엔 | Electric fingerprint sensor device and related method |
| JPH09218006A (en) * | 1995-12-15 | 1997-08-19 | Lucent Technol Inc | Fingerprint sensor |
| JPH10307904A (en) * | 1997-05-02 | 1998-11-17 | Sony Corp | Irregular pattern reader |
| US6088471A (en) * | 1997-05-16 | 2000-07-11 | Authentec, Inc. | Fingerprint sensor including an anisotropic dielectric coating and associated methods |
-
2000
- 2000-12-30 KR KR10-2000-0086607A patent/KR100369349B1/en not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6354619A (en) * | 1986-08-26 | 1988-03-09 | Daicel Chem Ind Ltd | Capacitance type coordinate detector |
| JPH0396005A (en) * | 1989-09-07 | 1991-04-22 | Toshiba Corp | Piezoelectric thin film resonator |
| JPH09218006A (en) * | 1995-12-15 | 1997-08-19 | Lucent Technol Inc | Fingerprint sensor |
| KR970059975A (en) * | 1996-01-26 | 1997-08-12 | 스코드 티 마이쿠엔 | Electric fingerprint sensor device and related method |
| JPH10307904A (en) * | 1997-05-02 | 1998-11-17 | Sony Corp | Irregular pattern reader |
| US6088471A (en) * | 1997-05-16 | 2000-07-11 | Authentec, Inc. | Fingerprint sensor including an anisotropic dielectric coating and associated methods |
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