KR100368191B1 - 패터닝된반도체기판상의층을연마하는공정 - Google Patents

패터닝된반도체기판상의층을연마하는공정 Download PDF

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Publication number
KR100368191B1
KR100368191B1 KR1019950013102A KR19950013102A KR100368191B1 KR 100368191 B1 KR100368191 B1 KR 100368191B1 KR 1019950013102 A KR1019950013102 A KR 1019950013102A KR 19950013102 A KR19950013102 A KR 19950013102A KR 100368191 B1 KR100368191 B1 KR 100368191B1
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KR
South Korea
Prior art keywords
polishing
layer
exposed surface
semiconductor substrate
patterned semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019950013102A
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English (en)
Korean (ko)
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KR960002613A (ko
Inventor
토마스에스.코바야시
Original Assignee
모토로라 인코포레이티드
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H10P52/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/028—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring lateral position of a boundary of the object
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1019950013102A 1994-06-02 1995-05-25 패터닝된반도체기판상의층을연마하는공정 Expired - Lifetime KR100368191B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US253,013 1994-06-02
US253013 1994-06-02
US08/253,013 US5461007A (en) 1994-06-02 1994-06-02 Process for polishing and analyzing a layer over a patterned semiconductor substrate

Publications (2)

Publication Number Publication Date
KR960002613A KR960002613A (ko) 1996-01-26
KR100368191B1 true KR100368191B1 (ko) 2003-04-08

Family

ID=22958485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950013102A Expired - Lifetime KR100368191B1 (ko) 1994-06-02 1995-05-25 패터닝된반도체기판상의층을연마하는공정

Country Status (4)

Country Link
US (2) US5461007A (OSRAM)
JP (1) JP3673559B2 (OSRAM)
KR (1) KR100368191B1 (OSRAM)
TW (1) TW270218B (OSRAM)

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US6108091A (en) * 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6146248A (en) * 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US5975994A (en) * 1997-06-11 1999-11-02 Micron Technology, Inc. Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
DE19726665C2 (de) * 1997-06-23 2002-06-27 Univ Dresden Tech Verfahren und Anordnung zur in-situ-Endpunktermittlung beim CMP
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US6268224B1 (en) 1998-06-30 2001-07-31 Lsi Logic Corporation Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer
US6241847B1 (en) 1998-06-30 2001-06-05 Lsi Logic Corporation Method and apparatus for detecting a polishing endpoint based upon infrared signals
US6071818A (en) 1998-06-30 2000-06-06 Lsi Logic Corporation Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material
US6077783A (en) * 1998-06-30 2000-06-20 Lsi Logic Corporation Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer
US6074517A (en) * 1998-07-08 2000-06-13 Lsi Logic Corporation Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer
US6285035B1 (en) 1998-07-08 2001-09-04 Lsi Logic Corporation Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method
US6080670A (en) * 1998-08-10 2000-06-27 Lsi Logic Corporation Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie
US6046111A (en) * 1998-09-02 2000-04-04 Micron Technology, Inc. Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates
TW414964B (en) * 1998-09-23 2000-12-11 United Microelectronics Corp Method of reducing noise of end point detector in chemical mechanical polishing process
US6201253B1 (en) 1998-10-22 2001-03-13 Lsi Logic Corporation Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system
US6121147A (en) * 1998-12-11 2000-09-19 Lsi Logic Corporation Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance
US6117779A (en) 1998-12-15 2000-09-12 Lsi Logic Corporation Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint
US6316276B1 (en) 1998-12-17 2001-11-13 Lsi Lgoic Corporation Apparatus and method of planarizing a semiconductor wafer that includes a first reflective substance and a second reflective substance
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US6071177A (en) * 1999-03-30 2000-06-06 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for determining end point in a polishing process
US6334807B1 (en) 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
DE19949976C1 (de) * 1999-10-08 2000-11-16 Univ Dresden Tech Verfahren und Anordnung zur in-situ Endpunkterkennung beim chemisch-mechanischen Polieren (CMP) von Schichten auf Halbleiterwafern
US6290572B1 (en) 2000-03-23 2001-09-18 Micron Technology, Inc. Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US7751609B1 (en) 2000-04-20 2010-07-06 Lsi Logic Corporation Determination of film thickness during chemical mechanical polishing
US6612901B1 (en) 2000-06-07 2003-09-02 Micron Technology, Inc. Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6500054B1 (en) 2000-06-08 2002-12-31 International Business Machines Corporation Chemical-mechanical polishing pad conditioner
US6428386B1 (en) 2000-06-16 2002-08-06 Micron Technology, Inc. Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6343974B1 (en) 2000-06-26 2002-02-05 International Business Machines Corporation Real-time method for profiling and conditioning chemical-mechanical polishing pads
US6567172B1 (en) 2000-08-09 2003-05-20 International Business Machines Corporation System and multipass probe for optical interference measurements
US6609947B1 (en) 2000-08-30 2003-08-26 Micron Technology, Inc. Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates
US6447369B1 (en) 2000-08-30 2002-09-10 Micron Technology, Inc. Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates
JP4379556B2 (ja) * 2000-09-22 2009-12-09 ソニー株式会社 研磨方法および研磨装置
US6805613B1 (en) * 2000-10-17 2004-10-19 Speedfam-Ipec Corporation Multiprobe detection system for chemical-mechanical planarization tool
US6593238B1 (en) 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
US6579149B2 (en) 2001-02-06 2003-06-17 International Business Machines Corporation Support and alignment device for enabling chemical mechanical polishing rinse and film measurements
US6319093B1 (en) 2001-02-06 2001-11-20 International Business Machines Corporation Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement
US7101799B2 (en) * 2001-06-19 2006-09-05 Applied Materials, Inc. Feedforward and feedback control for conditioning of chemical mechanical polishing pad
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
KR100489318B1 (ko) * 2001-08-25 2005-05-17 이원목 비타민 마이크로캡슐을 포함하는 섬유 유연제 조성물
US6579800B2 (en) * 2001-10-12 2003-06-17 Nutool, Inc. Chemical mechanical polishing endpoint detection
KR20010110244A (ko) * 2001-11-03 2001-12-12 이범갑 비수용성 향을 갖는 마이크로 캡슐 제조방법
JP3813512B2 (ja) * 2002-01-07 2006-08-23 株式会社東芝 貼り合わせ基板の評価方法及び評価装置、半導体装置の製造方法
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
JP2003275951A (ja) * 2002-03-20 2003-09-30 Sony Corp 研磨方法および研磨装置
DE10223945B4 (de) 2002-05-29 2006-12-21 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Verbessern der Herstellung von Damaszener-Metallstrukturen
US6709312B2 (en) 2002-06-26 2004-03-23 Motorola, Inc. Method and apparatus for monitoring a polishing condition of a surface of a wafer in a polishing process
US7341502B2 (en) 2002-07-18 2008-03-11 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US20060079007A1 (en) * 2004-10-08 2006-04-13 Applied Materials, Inc. System, method, and medium for an endpoint detection scheme for copper low-dielectric damascene structures for improved dielectric and copper loss
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Also Published As

Publication number Publication date
JP3673559B2 (ja) 2005-07-20
US5461007A (en) 1995-10-24
KR960002613A (ko) 1996-01-26
TW270218B (OSRAM) 1996-02-11
US5691253A (en) 1997-11-25
JPH0851090A (ja) 1996-02-20

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