KR100365173B1 - 실리콘 카바이드 크롬 박막 저항기를 형성하기 위한 방법 - Google Patents
실리콘 카바이드 크롬 박막 저항기를 형성하기 위한 방법 Download PDFInfo
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- KR100365173B1 KR100365173B1 KR1019990046766A KR19990046766A KR100365173B1 KR 100365173 B1 KR100365173 B1 KR 100365173B1 KR 1019990046766 A KR1019990046766 A KR 1019990046766A KR 19990046766 A KR19990046766 A KR 19990046766A KR 100365173 B1 KR100365173 B1 KR 100365173B1
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- Prior art keywords
- layer
- resistor
- material layer
- thin film
- isolation region
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- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 39
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title description 11
- 229910010271 silicon carbide Inorganic materials 0.000 title description 11
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 32
- 239000011651 chromium Substances 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 65
- 238000002955 isolation Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 150000007514 bases Chemical class 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 30
- 238000005530 etching Methods 0.000 description 22
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 21
- 230000008569 process Effects 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 238000000137 annealing Methods 0.000 description 10
- 239000000460 chlorine Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 9
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 8
- 229910021339 platinum silicide Inorganic materials 0.000 description 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 7
- -1 aluminum copper silicon Chemical compound 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- ZRJCILFNPAXFMS-UHFFFAOYSA-N [Ge].[Si].[Cr] Chemical compound [Ge].[Si].[Cr] ZRJCILFNPAXFMS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
- H01L28/24—Resistors with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (5)
- 반도체 재료와 상기 반도체 재료 상에 형성된 격리영역을 갖는 반도체 디바이스 상에 박막 저항기를 형성하는 방법에 있어서,상기 격리 영역 상에 희생 재료 층을 형성하는 단계;상기 격리 영역의 노출부분을 형성하기 위해 상기 희생 재료 층의 선택된 부분을 제거하는 단계; 및상기 격리영역의 노출부분과 상기 희생 재료 층 위에 저항 재료 층을 형성하는 단계를 포함하고,상기 저항 재료 층은, 15-30 중량%의 실리콘, 10-20 중량%의 탄소, 및 50-70중량%의 크롬을 포함하는 것을 특징으로 하는 방법.
- 제1항에 있어서, 저항기를 형성하기 위해 상기 저항 재료 층의 선택된 부분을 제거하는 단계; 및상기 희생 재료 층을 제거하는 단계를 더 포함하는 것을 특징으로 하는 방법.
- 반도체 재료와 상기 반도체 재료상에 형성된 격리영역을 갖는 반도체 디바이스 상에 박막 저항기를 형성하는 방법에 있어서,상기 격리 영역 상에 희생 재료 층을 형성하는 단계;상기 격리 영역의 노출부분을 형성하기 위해 상기 희생 재료 층의 선택된 부분을 제거하는 단계; 및상기 격리영역의 노출부분과 상기 희생 재료 층위에, 15-30 중량%의 실리콘, 10-20 중량%의 탄소, 및 50-70 중량%의 크롬으로 이루어진 저항 재료 층을 형성하는 단계;저항기를 형성하기 위해 상기 저항 재료 층의 선택된 부분을 제거하는 단계; 및상기 희생 재료 층을 제거하는 단계를 포함하는 것을 특징으로 하는 방법.
- 반도체 재료와 상기 반도체 재료상에 형성된 격리영역을 갖는 반도체 디바이스 상에 박막 저항기를 형성하는 방법에 있어서,상기 격리 영역 상에 희생 재료 층을 형성하는 단계;상기 격리 영역의 노출부분을 형성하기 위해 상기 희생 재료 층의 선택된 부분을 제거하는 단계;상기 격리영역의 노출부분과 상기 희생 재료 층위에, 실리콘 및 게르마늄으로 이루어진 군으로부터 선택된 15-30 중량%의 제1 성분, 크롬 및 니켈로 이루어진 군으로부터 선택된 50-70 중량%의 제2 성분, 및 탄소로 이루어진 10-20 중량%의 제3 성분을 포함하는 저항 재료 층을 형성하는 단계;저항기를 형성하기 위해 상기 저항 재료 층의 선택된 부분을 제거하는 단계; 및상기 희생 재료 층을 제거하는 단계를 포함하는 것을 특징으로 하는 방법.
- 반도체 재료와 상기 반도체 재료상에 형성된 격리영역을 갖는 반도체 디바이스 상에 박막 저항기를 형성하는 방법에 있어서,상기 격리 영역 상에 희생 재료 층을 형성하는 단계;상기 격리 영역의 노출부분을 형성하기 위해 상기 희생 재료 층의 선택된 부분을 제거하는 단계;상기 격리영역의 노출부분과 상기 희생 재료 층위에, 탄소 및 게르마늄으로 이루어진 군으로부터 선택된 10-20 중량%의 제1 성분, 크롬 및 니켈로 이루어진 군으로부터 선택된 50-70 중량%의 제2 성분, 및 실리콘으로 이루어진 15-30 중량%의 제3 성분을 포함하는 저항 재료 층을 형성하는 단계;저항기를 형성하기 위해 상기 저항 재료 층의 선택된 부분을 제거하는 단계; 및상기 희생 재료 층을 제거하는 단계를 포함하는 것을 특징으로 하는 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US9/187,244 | 1998-11-06 | ||
US09/187,244 US6211032B1 (en) | 1998-11-06 | 1998-11-06 | Method for forming silicon carbide chrome thin-film resistor |
US09/187,244 | 1998-11-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000035076A KR20000035076A (ko) | 2000-06-26 |
KR100365173B1 true KR100365173B1 (ko) | 2002-12-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019990046766A KR100365173B1 (ko) | 1998-11-06 | 1999-10-27 | 실리콘 카바이드 크롬 박막 저항기를 형성하기 위한 방법 |
Country Status (2)
Country | Link |
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US (1) | US6211032B1 (ko) |
KR (1) | KR100365173B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102148166B1 (ko) | 2019-04-09 | 2020-08-26 | 김석주 | 냉기흡입배관의 흡기홀 결로방지장치 |
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US6365482B1 (en) * | 1999-10-28 | 2002-04-02 | Analog Devices, Inc. | I.C. thin film resistor stabilization method |
US6426268B1 (en) * | 2000-11-28 | 2002-07-30 | Analog Devices, Inc. | Thin film resistor fabrication method |
US7084070B1 (en) | 2001-03-30 | 2006-08-01 | Lam Research Corporation | Treatment for corrosion in substrate processing |
US20020177321A1 (en) * | 2001-03-30 | 2002-11-28 | Li Si Yi | Plasma etching of silicon carbide |
KR20030047604A (ko) * | 2001-12-11 | 2003-06-18 | 한국전기연구원 | 반도체 집적회로의 저 온도저항계수 저항체 제조방법 |
US7323751B2 (en) * | 2003-06-03 | 2008-01-29 | Texas Instruments Incorporated | Thin film resistor integration in a dual damascene structure |
US7345573B2 (en) * | 2005-05-24 | 2008-03-18 | Texas Instruments Incorporated | Integration of thin film resistors having different TCRs into single die |
US8242876B2 (en) | 2008-09-17 | 2012-08-14 | Stmicroelectronics, Inc. | Dual thin film precision resistance trimming |
US8659085B2 (en) * | 2010-08-24 | 2014-02-25 | Stmicroelectronics Pte Ltd. | Lateral connection for a via-less thin film resistor |
US8436426B2 (en) | 2010-08-24 | 2013-05-07 | Stmicroelectronics Pte Ltd. | Multi-layer via-less thin film resistor |
US8400257B2 (en) * | 2010-08-24 | 2013-03-19 | Stmicroelectronics Pte Ltd | Via-less thin film resistor with a dielectric cap |
US8927909B2 (en) | 2010-10-11 | 2015-01-06 | Stmicroelectronics, Inc. | Closed loop temperature controlled circuit to improve device stability |
US8809861B2 (en) | 2010-12-29 | 2014-08-19 | Stmicroelectronics Pte Ltd. | Thin film metal-dielectric-metal transistor |
US9159413B2 (en) | 2010-12-29 | 2015-10-13 | Stmicroelectronics Pte Ltd. | Thermo programmable resistor based ROM |
JP5616822B2 (ja) * | 2011-03-03 | 2014-10-29 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
US8981527B2 (en) * | 2011-08-23 | 2015-03-17 | United Microelectronics Corp. | Resistor and manufacturing method thereof |
US8526214B2 (en) | 2011-11-15 | 2013-09-03 | Stmicroelectronics Pte Ltd. | Resistor thin film MTP memory |
US20220271118A1 (en) * | 2021-02-25 | 2022-08-25 | Semiconductor Components Industries, Llc | Method and apparatus related to controllable thin film resistors for analog integrated circuits |
KR20230132862A (ko) * | 2021-03-29 | 2023-09-18 | 도소 가부시키가이샤 | Cr-Si 계 막 |
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US5081439A (en) | 1990-11-16 | 1992-01-14 | International Business Machines Corporation | Thin film resistor and method for producing same |
US5254869A (en) * | 1991-06-28 | 1993-10-19 | Linear Technology Corporation | Aluminum alloy/silicon chromium sandwich schottky diode |
US5496762A (en) | 1994-06-02 | 1996-03-05 | Micron Semiconductor, Inc. | Highly resistive structures for integrated circuits and method of manufacturing the same |
JP3266041B2 (ja) * | 1996-05-22 | 2002-03-18 | 株式会社島津製作所 | 部材接合法及びこの方法により製造した光学測定装置 |
US5976944A (en) * | 1997-02-12 | 1999-11-02 | Harris Corporation | Integrated circuit with thin film resistors and a method for co-patterning thin film resistors with different compositions |
-
1998
- 1998-11-06 US US09/187,244 patent/US6211032B1/en not_active Expired - Lifetime
-
1999
- 1999-10-27 KR KR1019990046766A patent/KR100365173B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102148166B1 (ko) | 2019-04-09 | 2020-08-26 | 김석주 | 냉기흡입배관의 흡기홀 결로방지장치 |
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KR20000035076A (ko) | 2000-06-26 |
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