KR100364241B1 - Epoxy resin composition for sealing of semiconductor device - Google Patents

Epoxy resin composition for sealing of semiconductor device Download PDF

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KR100364241B1
KR100364241B1 KR1019970076135A KR19970076135A KR100364241B1 KR 100364241 B1 KR100364241 B1 KR 100364241B1 KR 1019970076135 A KR1019970076135 A KR 1019970076135A KR 19970076135 A KR19970076135 A KR 19970076135A KR 100364241 B1 KR100364241 B1 KR 100364241B1
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coupling agent
epoxy resin
weight
resin composition
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KR19990056156A (en
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종 원 김
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제일모직주식회사
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/04Epoxynovolacs
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62Alcohols or phenols
    • C08G59/621Phenols
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • C08K3/36Silica
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic

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  • Epoxy Resins (AREA)
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Abstract

PURPOSE: Provided is an epoxy resin composition for sealing semiconductor device which has excellent resistance to corrosion of aluminum pad, and improved moldability at high temperature and humidity. CONSTITUTION: The resin composition essentially comprising an epoxy resin represented by formula 1, a curing agent represented by formula 2, a curing accelerator represented by formula 3, a coupling agent, a modified silicon oil, and an inorganic filler, is characterized in that the coupling agent is a coupling agent mixture of mercapto-based coupling agent and epoxy-based coupling agent in weight ratio of 2:8-6:4, and the amount of the used mixture is 0.2-0.3 wt% based on the total resin composition. In the formulas, n represents a polymerization degree and is a number of 0, 1 or 2.

Description

반도체 소자 밀봉용 에폭시 수지 조성물Epoxy Resin Compositions for Semiconductor Device Sealing

본 발명은 성형시 작업성이 우수하며 고온다습한 조건하에서 알루미늄 패드(Aluminum Pad)의 부식을 발생시키지 않는등 그 신뢰성이 우수한 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 올소크레졸노볼락(Ortho Cresol Novolac)계 에폭시 수지와 페놀 노볼락(Phenol Novolac)계 경화제, 머캅토(Mercapto)계 커플링에이전트와 에폭시계 커플링에이전트가 중량비 2 : 8 내지 6 : 4로 이루어진 혼합 커플링제, 트리페닐포스핀 경화촉진제, 변성실리콘 오일 및 무기충진제를 필수 성분으로 하는 성형성이 우수하고 알루미늄 패드 부식에 대한 저항력이 뛰어난 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition which is excellent in workability during molding and excellent in reliability such as not causing corrosion of an aluminum pad under high temperature and high humidity conditions. More specifically, Ortho Cresol Novolac) epoxy resin, phenol novolac curing agent, mercapto coupling agent and epoxy coupling agent is a mixed coupling agent consisting of a weight ratio of 2: 8 to 6: 4, triphenylphosphine The present invention relates to an epoxy resin composition for sealing semiconductor elements excellent in moldability and excellent resistance to corrosion of an aluminum pad, including curing accelerators, modified silicone oils, and inorganic fillers as essential components.

일반적으로 수지 밀봉용 반도체 장치는 외부환경의 온도 및 습도변화에 따른 열응력과 수분침투에 의하여 알루미늄패드 부식으로 인한 고장발생 빈도가 높아지는 단점이 있다. 이와 같은 부식 발생을 억제하기 위한 방법으로는 고순도의 에폭시 수지, 또는 경화제의 사용, 반도체 소자밀봉제와 리드프레임간의 접착력 경화제의 첨가에 의한 디라미네이션의 억제, 이온포착제(Ion Trapper)적용에 의한 불순물의 저하 및 무기 충진제를 고충전하여 수분 흡습량을 저하시키는 방법이 있다.In general, a resin sealing semiconductor device has a disadvantage in that a failure frequency due to corrosion of an aluminum pad increases due to thermal stress and moisture permeation according to temperature and humidity changes in an external environment. As a method for suppressing the occurrence of corrosion, the use of a high-purity epoxy resin or a curing agent, the suppression of delamination by the addition of an adhesive hardening agent between the semiconductor element sealant and the lead frame, and the application of an ion trapper There is a method of lowering impurities and decreasing the moisture absorption by high filling of the inorganic filler.

일본국 특공소 62-26649에는 고순도의 올소 크레졸 노볼락형 에폭시 수지가 소개되어 있고, 산무수물 경화제를 대체할 수 있는 페놀 수지가 개발된 이래 반도체 소자의 알루미늄 배선의 부식 문제를 완전히 해결하였으나, 전극으로 사용되는 알루미늄패드는 골드 와이어(Gold wire)와 접속시켜야 하기 때문에 에폭시 수지 조성물과 직접적인 접촉을 하고 있어 부식이 발생하기 쉽고 이에 따른 전기적 저항의 증가 등의 문제점이 야기되고 있는 실정이다.Japan's special office 62-26649 introduces a high-purity olso cresol novolac-type epoxy resin, and since the development of a phenolic resin that can replace the acid anhydride curing agent, the problem of corrosion of aluminum wiring in semiconductor devices has been completely solved. Since the aluminum pad used as the wire is in direct contact with the epoxy resin composition because it must be connected to the gold wire, corrosion is likely to occur, and thus an increase in electrical resistance is caused.

이를 해결하기 위하여 에폭시 수지 조성물과 알루미늄패드와의 접착강도를 향상시키고 수분 흡습량이 적으며 불순물 농도가 낮은 에폭시 수지 조성물이 요구되고 있으나, 반도체의 특성이나 에폭시 수지 조성물의 취약성으로 인하여 만족할 만한 수지 조성물을 수득할 수 없었다.In order to solve this problem, an epoxy resin composition having improved adhesion strength between the epoxy resin composition and the aluminum pad, a low moisture absorption amount, and a low impurity concentration is required. However, a satisfactory resin composition is required due to the characteristics of the semiconductor and the fragility of the epoxy resin composition. Could not be obtained.

본 발명은 접착력강화제 첨가에 의하여 에폭시 수지 조성물과 리드프레임(Lead Frame)간 또는 에폭시 수지 조성물과 반도체 소자 표면간 계면에서 발생하는 박리현상인 디라미네이션의 억제를 달성함으로써 알루미늄 패드 부식에 대한 저항력이 뛰어나고, 성형성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물을 제공하는 것이다.The present invention achieves suppression of delamination, which is a peeling phenomenon occurring at the interface between the epoxy resin composition and the lead frame or between the epoxy resin composition and the surface of the semiconductor device by the addition of an adhesion enhancing agent, thereby providing excellent resistance to corrosion of aluminum pads. It is to provide an epoxy resin composition for sealing semiconductor elements excellent in moldability.

본 발명은 하기 화학식 1로 나타낼 수 있는 에폭시 수지, 화학식 2로 나타낼 수 있는 경화제 및 화학식 3으로 나타낼 수 있는 트리페닐 포스핀 경화촉진제로 이루어진 조성물 전체에 대하여 머캅토(Mercapto)계 커플링에이전트와 에폭시계 커플링에이전트를 중량비 2 : 8 내지 6 : 4로 혼합한 혼합커플링제 0.2 내지 0.3중량%를 첨가하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to a mercapto-based coupling agent and epoxy with respect to the entire composition consisting of an epoxy resin represented by Formula 1, a curing agent represented by Formula 2, and a triphenyl phosphine curing accelerator represented by Formula 3. It is related with the epoxy resin composition for semiconductor element sealing characterized by adding 0.2-0.3 weight% of the mixed coupling agents which mixed the system coupling agent in the weight ratio 2: 8-6: 4.

즉, 본 발명은 화학식 1로 나타낼 수 있는 에폭시 수지와That is, the present invention is an epoxy resin that can be represented by the formula (1)

Figure kpo00000
Figure kpo00000

(단, n은 중합도를 나타내며 n=0, 1, 2인 값을 갖는다)(Where n represents the degree of polymerization and has a value of n = 0, 1, 2)

화학식 2로 나타낼 수 있는 경화제와A curing agent represented by formula (2) and

Figure kpo00001
Figure kpo00001

(단, n은 중합도를 나타내며 n=0,1, 2인 값을 갖는다)(Where n represents the degree of polymerization and has a value of n = 0, 1, 2)

화학식 3으로 나타낼 수 있는 트리페닐 포스핀 경화촉진제와Triphenyl phosphine curing accelerator represented by the formula (3)

Figure kpo00002
Figure kpo00002

머캅토계 커플링에이전트와 에폭시계 커플링에이전트가 중량비 2 : 8 내지 6 : 4로 이루어진 혼합커플링제, 변성실리콘 오일 및 무기 충진제를 필수 성분으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.A mercapto-based coupling agent and an epoxy-based coupling agent relate to an epoxy resin composition for sealing semiconductor elements comprising a mixed coupling agent composed of a weight ratio of 2: 8 to 6: 4, a modified silicone oil, and an inorganic filler as essential components.

이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.

본 발명에서 에폭시 수지는 올소 크레졸 노볼락계 에폭시 수지로 전체 조성물에 대하여 10 내지 15중량% 사용하며, 당량이 180 내지 210인 고순도의 에폭시가 바람직하다.In the present invention, the epoxy resin is an oxo cresol novolac-based epoxy resin, 10 to 15% by weight based on the total composition, and a high purity epoxy having an equivalent weight of 180 to 210 is preferable.

본 발명에서 사용되는 경화제로는 2개 이상의 수산기를 갖고, 수산기 당량이 100 내지 200인 통상의 페놀 노볼락수지, 크레졸 노볼락 수지, 디사이클로펜타디엔 수지등이 사용될 수 있으며, 이를 단독 또는 2종 이상 병행하여 사용할 수 있다. 그러나 경제성 및 성형성의 관점에서 페놀 노볼락형수지를 경화제 전체의 50중량% 이상 사용하는 것이 바람직하고, 에폭시 수지와 경화제의 조성비는 수산기 당량에 대한 에폭시 당량이 0.8 내지 1.2인 것이 바람직하며, 사용량은 전체 조성물에 대하여 5.0 내지 10.0중량%가 바람직하다.As the curing agent used in the present invention, a conventional phenol novolak resin, cresol novolak resin, dicyclopentadiene resin, etc. having two or more hydroxyl groups and having a hydroxyl group equivalent of 100 to 200, may be used alone or two kinds thereof. The above can be used in parallel. However, from the viewpoint of economy and moldability, it is preferable to use at least 50% by weight of the phenol novolak-type resin, and the composition ratio of the epoxy resin and the curing agent is preferably an epoxy equivalent of 0.8 to 1.2 with respect to the hydroxyl equivalent, and the amount of use is 5.0-10.0 weight% is preferable with respect to the whole composition.

본 발명에서 사용된 경화촉진제는 화학식 3으로 표시되는 트리페닐 포스핀 경화촉진제로 전체 조성물에 대하여 0.2 내지 0.3중량% 사용하는 것이 바람직하다.The curing accelerator used in the present invention is a triphenyl phosphine curing accelerator represented by the formula (3) is preferably used 0.2 to 0.3% by weight based on the total composition.

본 발명에서 사용한 커플링에이전트는 머캅토계와 에폭시계로서 중량비 2 : 8 내지 6 : 4인 것이 바람직한데, 중량비가 2 : 8 보다 작거나 6 : 4보다 큰 경우 예를들면 1 : 9, 7 : 3 또는 8 : 2 등의 경우에는 머캅토계 커플링에이전트의 효과가 미약해진다. 이와 같은 커플링에이전트 혼합물의 사용량은 전체 에폭시 수지 조성물에 대하여 0.2 내지 0.3중량% 이다.The coupling agent used in the present invention is preferably a mercapto-based and epoxy-based weight ratio of 2: 8 to 6: 4, but when the weight ratio is smaller than 2: 8 or larger than 6: 4, for example, 1: 9, 7: In the case of 3 or 8: 2, etc., the effect of a mercapto type coupling agent becomes weak. The amount of the coupling agent mixture used is 0.2 to 0.3% by weight based on the total epoxy resin composition.

본 발명에서는 상기에서 설명한 성분이외에 무기 충진제와 기타 성형재료가 사용될 수 있는데, 사용된 무기 충진제는 그 평균입자가 0.1 내지 35㎛인 용융실리카를 사용하는 것이 바람직하고, 충전량은 조성물 전체에 대해 70 내지 80중량%를 사용하는 것이 바람직하다. 만일, 무기 충진제가 70중량% 미만이면 충분한 강도를 실현할 수 없으며 또한 수분의 침투가 용이해져 알루미늄 패드 부식에 치명적이 된다. 반면에 무기 충진제의 상한은 성형성을 고려하여 선정하는 것이 바람직한데 본 발명에서와 같이 80중량%가 바람직하다. 또한, 무기 충진제의 형상은 분쇄형과 구형의 실리카를 구성 조성비 3 : 7 내지 7 : 3의 비율로 혼합한 형태의 것이 바람직하다.In the present invention, inorganic fillers and other molding materials may be used in addition to the above-described components. The inorganic fillers used are preferably molten silica having an average particle size of 0.1 to 35 μm, and the filling amount is 70 to about the entire composition. Preference is given to using 80% by weight. If the inorganic filler is less than 70% by weight, sufficient strength cannot be realized and moisture can be easily penetrated, which is fatal to aluminum pad corrosion. On the other hand, the upper limit of the inorganic filler is preferably selected in consideration of the moldability, 80% by weight is preferred as in the present invention. In addition, the shape of the inorganic filler is preferably in the form of a mixture of pulverized and spherical silica in the ratio of constituent composition ratio 3: 7 to 7: 3.

본 발명의 성형재료에는 브로모 에폭시의 난연제, 삼산화안티몬, 수산화알루미늄, 오산화안티몬 등의 난연조제, 고급지방산, 고급지방산 금속염, 에스테르 왁스 등의 이형제, 카본블랙, 유·무기 염료 등의 착색제, 에폭시실란, 아미노실란,알킬실란 등의 커플링제를 필요에 따라 사용할 수 있다.The molding materials of the present invention include flame retardants of bromo epoxy, flame retardants such as antimony trioxide, aluminum hydroxide, antimony pentoxide, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, colorants such as carbon black, organic and inorganic dyes, and epoxys. Coupling agents, such as a silane, an aminosilane, and an alkylsilane, can be used as needed.

이상과 같은 성분들을 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로는 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤 롤밀이나 니이더로 용융 혼련하며, 냉각, 분쇄과정을 거쳐 최종 분말 제품을 얻을 수 있다.As a general method for producing an epoxy resin composition using the above components, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a Rodige mixer, melt-kneaded with a roll mill or a kneader, and cooled and pulverized. The final powder product can be obtained.

본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는방법으로는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection)성형법이나 캐스팅(Casting) 등의 방법으로도 성형가능하다.As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method is most commonly used, or injection molding or casting may be used.

이하 본 발명을 실시예를 들어 더욱 상세히 설명하고자 하나 본 발명이 하기 실시예에 의하여 제한되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by the following Examples.

실시예 1∼4Examples 1-4

본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위하여 표 1에서와 같이 각 성분들을 평량한 뒤, 헨셀믹서를 이용하여 균일하게 혼합한 뒤 분말상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융혼련한 뒤 냉각 및 분쇄 과정을 거쳐 에폭시 수지 조성물을 제조하였다.In order to prepare the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. After melt kneading at 100 ° C. for 7 minutes, an epoxy resin composition was prepared by cooling and pulverizing.

이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 스파이랄 플로우와 Shore-D 측정법에 의한 열시강도 및 UTM에 의한 부착강도를 측정하였으며, 시험편을 제작 175℃에서 6시간 후경화 시킨 뒤, 유리전이 온도와 흡습율을 측정하였다. 또한, 20 SOP을 성형하여 후경화시킨 뒤 85℃, 65%RH의 항온 항습조건에서 각각 168시간 동안 흡습시키고 245℃로 10초동안 IR리플로우를 3회 통과시켜 전처리를 실시한 후 121℃, 100%RH의 PCT(Pressure Cooker Test)를 사용하여 168시간 동안 수분을 흡습시킨 뒤 알루미늄 패드의 부식발생상황과 작업시의 성형성을 관찰하여 에폭시 수지 조성물이 알루미늄 패드의 부식발생과 성형성에 미치는 영향을 검토한 후 표 1에 나타내었다.The epoxy resin composition thus obtained was measured by thermal flow strength and adhesion strength by UTM by spiral flow and Shore-D measurement. After the test piece was cured at 175 ° C. for 6 hours, the glass transition temperature and moisture absorption rate were measured. Measured. In addition, 20 SOPs were formed and post-cured, and then absorbed for 168 hours under constant temperature and humidity conditions of 85 ° C. and 65% RH. After pretreatment by passing IR reflow three times for 10 seconds at 245 ° C., 121 ° C. and 100 ° C. After absorbing moisture for 168 hours using PCT (Pressure Cooker Test) of% RH, the corrosion condition of aluminum pads and workability were observed to examine the effect of epoxy resin composition on corrosion and formability of aluminum pads. After examining, it is shown in Table 1.

구성성분Ingredient 실시예 1Example 1 실시예 2Example 2 실시예 3Example 3 실시예 4Example 4 에폭시 수지Epoxy resin 14.6614.66 14.6614.66 14.6614.66 14.6614.66 페놀노볼락수지Phenolic novolac resin 7.947.94 7.947.94 7.947.94 7.947.94 경화촉진제Curing accelerator 0.240.24 0.240.24 0.240.24 0.240.24 커플링에이전트Coupling Agent 머캅토계Mercapto 0.060.06 0.080.08 0.100.10 0.120.12 에폭시계Epoxy 0.200.20 0.180.18 0.160.16 0.140.14 실리카Silica 74.074.0 74.074.0 74.074.0 74.074.0 에폭시 변성 실리콘 오일Epoxy modified silicone oil 0.130.13 0.130.13 0.130.13 0.130.13 카본블랙Carbon black 0.270.27 0.270.27 0.270.27 0.270.27 카르나우바왁스Carnauba Wax 0.250.25 0.250.25 0.250.25 0.250.25 기타조제Other preparation 2.252.25 2.252.25 2.252.25 2.252.25 스파이랄플로우(inch)Spiral Flow (inch) 3636 3535 3535 3232 열시강도(Shore-D)Thermal strength (Shore-D) 7474 7575 7272 7373 부착강도(kg/㎟)Adhesion Strength (kg / ㎠) 3030 2929 3232 3333 유리전이온도(℃)Glass transition temperature (℃) 144144 147147 142142 144144 성형성(Sticking횟수)Formability (Sticking Count) 0/500/50 0/500/50 0/500/50 0/500/50 흡습율(PCT 168시간)Hygroscopicity (168 hours PCT) 0.360.36 0.340.34 0.350.35 0.320.32 부식발생(PCT 168시간)Corrosion occurrence (168 hours PCT) 0/450/45 0/450/45 0/450/45 0/450/45

(단위 : 중량%)(Unit: weight%)

비교예 1∼3Comparative Examples 1 to 3

표 2에 나타낸 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조한 후 각 물성의 측정, 알루미늄 패드 부식발생 및 성형성 등을 표 2에 나타내었다.As shown in Table 2, each component was weighed to a given composition to prepare an epoxy resin composition in the same manner as in Example, and the measurement of each physical property, the occurrence of corrosion of aluminum pads, and the moldability are shown in Table 2.

구성성분Ingredient 비교예 1Comparative Example 1 비교예 2Comparative Example 2 비교예 3Comparative Example 3 에폭시 수지Epoxy resin 14.6614.66 14.6614.66 14.6614.66 페놀노볼락수지Phenolic novolac resin 7.947.94 7.947.94 7.947.94 경화촉진제Curing accelerator 0.240.24 0.240.24 0.240.24 커플링에이전트Coupling Agent 머캅토계Mercapto 0.000.00 0.260.26 0.210.21 에폭시계Epoxy 0.260.26 0.000.00 0.050.05 실리카Silica 74.074.0 74.074.0 74.074.0 에폭시 변성 실리콘 오일Epoxy modified silicone oil 0.130.13 0.130.13 0.130.13 카본블랙Carbon black 0.270.27 0.270.27 0.270.27 카르나우바왁스Carnauba Wax 0.250.25 0.250.25 0.250.25 기타조제Other preparation 2.252.25 2.252.25 2.252.25 스파이랄플로우(inch)Spiral Flow (inch) 3434 3535 3232 열시강도(Shore-D)Thermal strength (Shore-D) 7272 7575 7373 부착강도(kg/㎟)Adhesion Strength (kg / ㎠) 2020 3535 3434 유리전이온도(℃)Glass transition temperature (℃) 144144 147147 144144 성형성(Sticking횟수)Formability (Sticking Count) 0/500/50 16/5016/50 4/504/50 흡습율(PCT 168시간)Hygroscopicity (168 hours PCT) 0.410.41 0.340.34 0.320.32 부식발생(PCT 168시간)Corrosion occurrence (168 hours PCT) 5/455/45 0/450/45 0/450/45

(단위 : 중량%)(Unit: weight%)

비교예 1에서 나타난 바와 같이 커플링에이전트를 에폭시계 단독으로 사용하면 성형성은 우수하나 수지 조성물과 리드프레임간의 부착강도가 커플링에이전트를 머캅토계 및 에폭시계를 혼합한 실시예 1∼4 또는 비교예 3에 비하여 상대적으로 작아 내습성이 떨어져 알루미늄 패드 부식 가능성이 높아지고, 비교예 2와 같이 머캅토계를 단독으로 사용하거나 비교예 3과 같이 머캅토계와 에폭시계의 혼합비율을 6 : 4 이상으로 하면 에폭시계를 단독 사용한 비교예 1에 비하여 부착강도가 커지므로 내습성은 향상되지만 작업시 성형성이 불량하여 실제 작업상의 중대한 문제점이 된다. 따라서, 성형성과 내습성을 동시에 만족시키기 위해서는 실시예 1∼4의 경우처럼 머캅토계와 에폭시계의 혼합을 본 발명에서와 같은 비율로 사용함으로써 수지조성물과 리드프레임간의 접착강도를 적정수준으로 높이게 되어 기대수준의 내습성과 작업시 성형성을 동시에 확보할 수 있게된다.As shown in Comparative Example 1, when the coupling agent is used alone, the moldability is excellent. Relatively small compared to 3, the moisture resistance is low, and the possibility of corrosion of the aluminum pad is increased, and when the mercapto system is used alone as in Comparative Example 2 or the mixing ratio of the mercapto system and the epoxy system is 6 or more as in Comparative Example 3, the epoxy Moisture resistance is improved because the adhesion strength is greater than that of Comparative Example 1 using the system alone, but the moldability is poor during operation, which is a serious problem in actual operation. Therefore, in order to satisfy the moldability and moisture resistance at the same time, as in the case of Examples 1 to 4, by using a mixture of mercapto-based and epoxy-based at the same ratio as in the present invention, the adhesive strength between the resin composition and the lead frame is increased to an appropriate level. It is possible to secure the expected moisture resistance and moldability at the same time.

이상과 같이 본 발명의 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉할 경우 수지조성물과 리드프레임간의 부착력이 크게 향상되어 반도체 소자 내부로의 수분침투가 억제되기 때문에 성형성과 알루미늄 패드 부식의 발생 억제력이 양호한 반도체 소자를 얻을 수 있게 된다. 특히, 리드프레임의 소재가 얼로이42(Alloy 42)일 때 보다 구리일 때 그 효과가 더욱 우수하게 된다.As described above, when the semiconductor element is sealed using the epoxy resin composition of the present invention, adhesion between the resin composition and the lead frame is greatly improved, and moisture penetration into the semiconductor element is suppressed. A semiconductor device can be obtained. In particular, the effect is more excellent when the material of the lead frame is copper than when alloy 42 (Alloy 42).

Claims (2)

하기 화학식 1로 나타낼 수 있는 에폭시수지, 화학식 2로 나타낼 수 있는 경화제, 화학식 3으로 나타낼 수 있는 경화촉진제, 커플링에이전트, 실리콘변성오일 및 무기충진제를 필수성분으로 한 조성물에 있어서, 상기 커플링에이전트가 머캅토(Mercapto)계 커플링에이전트와 에폭시계 커플링에이전트를 중량비 2 : 8 내지 6 : 4로 혼합한 혼합커플링제이고 이를 수지조성물 전체에 대하여 0.2 내지 0.3중량%를 첨가하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물.In the composition comprising the epoxy resin represented by the following formula (1), the curing agent represented by the formula (2), the curing accelerator represented by the formula (3), the coupling agent, the silicone-modified oil and the inorganic filler as essential components, the coupling agent Is a mixed coupling agent in which a mercapto-based coupling agent and an epoxy-based coupling agent are mixed in a weight ratio of 2: 8 to 6: 4, and 0.2 to 0.3% by weight is added to the entire resin composition. Epoxy resin composition for semiconductor element sealing. 화학식 1Formula 1
Figure kpo00003
Figure kpo00003
(단, n은 중합도를 나타내며 n=0, 1, 2인 값을 갖는다)(Where n represents the degree of polymerization and has a value of n = 0, 1, 2) 화학식 2Formula 2
Figure kpo00004
Figure kpo00004
(단, n은 중합도를 나타내며 n=0,1, 2인 값을 갖는다)(Where n represents the degree of polymerization and has a value of n = 0, 1, 2) 화학식 3Formula 3
Figure kpo00005
Figure kpo00005
올소크레졸 노볼락계 에폭시 수지 : 12 내지 15중량%,Allocresol novolac epoxy resin: 12 to 15% by weight, 페놀 노볼락수지 경화제 : 7 내지 10중량%,Phenol novolak resin curing agent: 7 to 10% by weight, 트리페놀포스핀 경화제 : 0.2 내지 0.3중량%,Triphenol phosphine curing agent: 0.2 to 0.3% by weight, 머캅토계 커플링에이전트/ 에폭시계 커플링에이전트 중량 혼합비 2 : 8 내지 6: 4인 혼합 커플링제 : 0.2 내지 0.3중량%,Mercapto-based coupling agent / epoxy-based coupling agent weight mixing ratio 2: 8 to 6: 4 mixed coupling agent: 0.2 to 0.3% by weight, 실리카 무기 충진제 : 70 내지 80중량% 및Silica inorganic filler: 70-80% by weight and 에폭시 변성 실리콘 오일 : 0.1 내지 0.2중량%Epoxy modified silicone oil: 0.1 to 0.2% by weight 로 구성되는 반도체 소자 밀봉용 에폭시 수지 조성물.Epoxy resin composition for sealing semiconductor elements composed of.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150110348A (en) 2014-03-20 2015-10-02 동우 화인켐 주식회사 A color photosensitive resin composition, color filter and display device comprising the same

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02218736A (en) * 1989-02-20 1990-08-31 Toray Ind Inc Epoxy resin composition
US5294835A (en) * 1992-07-28 1994-03-15 Nitto Denko Corporation Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same
US5476884A (en) * 1989-02-20 1995-12-19 Toray Industries, Inc. Semiconductor device-encapsulating epoxy resin composition containing secondary amino functional coupling agents
KR970042806A (en) * 1995-12-30 1997-07-26 김충세 Manufacturing method of resin composition for semiconductor element sealing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02218736A (en) * 1989-02-20 1990-08-31 Toray Ind Inc Epoxy resin composition
US5476884A (en) * 1989-02-20 1995-12-19 Toray Industries, Inc. Semiconductor device-encapsulating epoxy resin composition containing secondary amino functional coupling agents
US5294835A (en) * 1992-07-28 1994-03-15 Nitto Denko Corporation Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same
KR970042806A (en) * 1995-12-30 1997-07-26 김충세 Manufacturing method of resin composition for semiconductor element sealing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150110348A (en) 2014-03-20 2015-10-02 동우 화인켐 주식회사 A color photosensitive resin composition, color filter and display device comprising the same

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