KR100362126B1 - 포토마스크블랭크 - Google Patents

포토마스크블랭크 Download PDF

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Publication number
KR100362126B1
KR100362126B1 KR1019960704398A KR19960704398A KR100362126B1 KR 100362126 B1 KR100362126 B1 KR 100362126B1 KR 1019960704398 A KR1019960704398 A KR 1019960704398A KR 19960704398 A KR19960704398 A KR 19960704398A KR 100362126 B1 KR100362126 B1 KR 100362126B1
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KR
South Korea
Prior art keywords
film
wavelength
translucent
photomask blank
phase variant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019960704398A
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English (en)
Korean (ko)
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KR970701379A (ko
Inventor
하키 우푸크 알패이
로저 하퀘일 프렌치
프랭클린 딘 칼크
Original Assignee
듀폰 포토마스크, 인크.
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Application filed by 듀폰 포토마스크, 인크. filed Critical 듀폰 포토마스크, 인크.
Publication of KR970701379A publication Critical patent/KR970701379A/ko
Application granted granted Critical
Publication of KR100362126B1 publication Critical patent/KR100362126B1/ko
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019960704398A 1994-02-14 1995-02-10 포토마스크블랭크 Expired - Fee Related KR100362126B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/195,670 US5415953A (en) 1994-02-14 1994-02-14 Photomask blanks comprising transmissive embedded phase shifter
US08/195,670 1994-02-14

Publications (2)

Publication Number Publication Date
KR970701379A KR970701379A (ko) 1997-03-17
KR100362126B1 true KR100362126B1 (ko) 2003-04-10

Family

ID=22722290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960704398A Expired - Fee Related KR100362126B1 (ko) 1994-02-14 1995-02-10 포토마스크블랭크

Country Status (8)

Country Link
US (1) US5415953A (https=)
EP (1) EP0745235B1 (https=)
JP (1) JP3595860B2 (https=)
KR (1) KR100362126B1 (https=)
CN (1) CN1122876C (https=)
DE (1) DE69509502T2 (https=)
TW (1) TW316856B (https=)
WO (1) WO1995022083A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180076296A (ko) * 2016-12-27 2018-07-05 호야 가부시키가이샤 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3440346B2 (ja) * 1994-12-22 2003-08-25 大日本印刷株式会社 ブラックマトリックス用クロムブランクスおよび液晶デイスプレイ用カラーフイルター
EP0788027B1 (en) * 1995-07-19 2001-10-10 Hoya Corporation Phase shift mask blank and production method therefor
KR0147493B1 (ko) * 1995-10-25 1998-08-01 김주용 하프톤 위상반전마스크 제조방법
US5618643A (en) * 1995-12-15 1997-04-08 Intel Corporation Embedded phase shifting mask with improved relative attenuated film transmission
US5942356A (en) 1996-03-30 1999-08-24 Hoya Corporation Phase shift mask and phase shift mask blank
US5897977A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
TW354392B (en) * 1996-07-03 1999-03-11 Du Pont Photomask blanks
US5714285A (en) * 1996-07-17 1998-02-03 Taiwan Semiconductor Manufacturing Company, Ltd Using (LaNiO3)X (TiO2)1-x oxide absorption composite for attenuating phase shifting blanks and masks
US5981109A (en) * 1996-07-17 1999-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Using (LaNiO3) X (TiO2) 1-X and (LaNiO3) X (Ta2 O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masks
US6174631B1 (en) 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
US6242136B1 (en) 1999-02-12 2001-06-05 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
US6682859B2 (en) * 1999-02-12 2004-01-27 Corning Incorporated Vacuum ultraviolet trasmitting silicon oxyfluoride lithography glass
US6319634B1 (en) * 1999-03-12 2001-11-20 Corning Incorporated Projection lithography photomasks and methods of making
US6783898B2 (en) 1999-02-12 2004-08-31 Corning Incorporated Projection lithography photomask blanks, preforms and method of making
US6265115B1 (en) 1999-03-15 2001-07-24 Corning Incorporated Projection lithography photomask blanks, preforms and methods of making
US6782716B2 (en) * 1999-02-12 2004-08-31 Corning Incorporated Vacuum ultraviolet transmitting silicon oxyfluoride lithography glass
JP2001033938A (ja) * 1999-07-22 2001-02-09 Oki Electric Ind Co Ltd ハーフトーン位相シフトマスクの特性補正方法
US6291113B1 (en) 1999-10-21 2001-09-18 Advanced Micro Devices, Inc. Sidelobe suppressing phase shift mask and method
US6410192B1 (en) 1999-11-15 2002-06-25 Corning Incorporated Photolithography method, photolithography mask blanks, and method of making
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
US6379014B1 (en) * 2000-04-27 2002-04-30 N & K Technology, Inc. Graded anti-reflective coatings for photolithography
JP3932805B2 (ja) * 2000-12-25 2007-06-20 株式会社日立製作所 フォトマスク及びそれを用いた電子デバイスの製造方法
JP2002244274A (ja) * 2001-02-13 2002-08-30 Shin Etsu Chem Co Ltd フォトマスクブランク、フォトマスク及びこれらの製造方法
US6653027B2 (en) * 2001-02-26 2003-11-25 International Business Machines Corporation Attenuated embedded phase shift photomask blanks
US7166392B2 (en) 2002-03-01 2007-01-23 Hoya Corporation Halftone type phase shift mask blank and halftone type phase shift mask
JP2003322954A (ja) * 2002-03-01 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2003322947A (ja) * 2002-04-26 2003-11-14 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
US6855463B2 (en) * 2002-08-27 2005-02-15 Photronics, Inc. Photomask having an intermediate inspection film layer
JP2004145065A (ja) * 2002-10-25 2004-05-20 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランク及びその位相シフトマスク及びそのマスクを用いた半導体装置の製造方法
KR100779956B1 (ko) * 2002-12-03 2007-11-28 호야 가부시키가이샤 포토마스크 블랭크 및 포토마스크 제조방법
US6859311B2 (en) * 2003-03-24 2005-02-22 Memphis Eye & Cataract Associates Ambulatory Surgery Center Digital micromirror device having a window transparent to ultraviolet (UV) light
TWI375114B (en) * 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
DE102009046878A1 (de) * 2009-07-31 2011-02-03 Advanced Mask Technology Center Gmbh & Co. Kg Verringerung der lonenwanderung von Absorbermaterialien von Lithographiemasken durch Chrompassivierung
TWI588593B (zh) * 2010-04-09 2017-06-21 Ｈｏｙａ股份有限公司 Phase shift mask substrate and method of making same, and phase shift mask
JP6198238B2 (ja) * 2013-04-17 2017-09-20 アルバック成膜株式会社 位相シフトマスクの製造方法
KR102145934B1 (ko) * 2014-05-20 2020-08-19 동우 화인켐 주식회사 광경화 패턴의 형성 방법
JP6341166B2 (ja) * 2015-09-03 2018-06-13 信越化学工業株式会社 フォトマスクブランク
JP6999460B2 (ja) * 2018-03-23 2022-01-18 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP7255512B2 (ja) * 2019-03-29 2023-04-11 信越化学工業株式会社 位相シフトマスクブランク及び位相シフトマスク

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD126361A1 (https=) * 1976-04-30 1977-07-13
JPS57121226A (en) * 1981-01-21 1982-07-28 Hitachi Ltd Photo mask
JPS61272746A (ja) * 1985-05-28 1986-12-03 Asahi Glass Co Ltd フオトマスクブランクおよびフオトマスク
US4890309A (en) * 1987-02-25 1989-12-26 Massachusetts Institute Of Technology Lithography mask with a π-phase shifting attenuator
JP2765016B2 (ja) * 1989-03-15 1998-06-11 凸版印刷株式会社 フオトマスクブランクおよびフオトマスク
JPH04125643A (ja) * 1990-09-18 1992-04-27 Toppan Printing Co Ltd フォトマスクおよびフォトマスクブランク
US5230971A (en) * 1991-08-08 1993-07-27 E. I. Du Pont De Nemours And Company Photomask blank and process for making a photomask blank using gradual compositional transition between strata
US5187726A (en) * 1991-09-30 1993-02-16 Wisconsin Alumni Research Foundation High resolution X-ray lithography using phase shift masks
JP3160332B2 (ja) * 1991-11-01 2001-04-25 大日本印刷株式会社 ハーフトーン位相シフトフォトマスク
TW505829B (en) * 1992-11-16 2002-10-11 Dupont Photomasks Inc A transmissive embedded phase shifter-photomask blank

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180076296A (ko) * 2016-12-27 2018-07-05 호야 가부시키가이샤 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법
KR102271751B1 (ko) * 2016-12-27 2021-06-30 호야 가부시키가이샤 위상 시프트 마스크 블랭크 및 이것을 사용한 위상 시프트 마스크의 제조 방법, 및 표시 장치의 제조 방법

Also Published As

Publication number Publication date
EP0745235B1 (en) 1999-05-06
TW316856B (https=) 1997-10-01
DE69509502D1 (de) 1999-06-10
CN1122876C (zh) 2003-10-01
DE69509502T2 (de) 1999-09-02
US5415953A (en) 1995-05-16
WO1995022083A3 (en) 1995-10-19
CN1145124A (zh) 1997-03-12
KR970701379A (ko) 1997-03-17
EP0745235A1 (en) 1996-12-04
JP3595860B2 (ja) 2004-12-02
JPH09508981A (ja) 1997-09-09
WO1995022083A2 (en) 1995-08-17

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