KR100352229B1 - Fabricating Method of Board for Hybrid IC Using Bonding Paste - Google Patents

Abstract

The present invention relates to a method for forming a circuit pattern on a ceramic substrate which is an insulating material for manufacturing a hybrid IC substrate, comprising: preparing a substrate using a ceramic material which is an insulating material; Applying an adhesive to the entire surface of the ceramic substrate; Attaching a metal plate; Etching the metal plate according to a circuit pattern; Forming a position to attach the thermoelectric semiconductor element to the substrate where the circuit is completed; Applying a conductive polymer to a position to which a thermoelectric semiconductor element of the substrate is attached; Plating a metal on the bonding portion of the thermoelectric semiconductor element attached to the substrate; The thermoelectric semiconductor device is positioned at a position to which the thermoelectric semiconductor device of the substrate is attached and fixed using a soldering reflower.

Description

Fabrication Method of Board for Hybrid IC Using Bonding Paste}

The present invention relates to a method for manufacturing a hybrid IC substrate using an adhesive, and more particularly, to a method of forming a circuit pattern on a ceramic substrate which is an insulating material in order to manufacture a hybrid IC substrate.

In general, a printed circuit board (PCB) is formed by pressing a copper foil on a thermosetting / insulating resin epoxy resin or a phenol resin with a hot plate press to make an original plate for a PCB, or to plate a copper film directly on a resin substrate. It is manufactured by the method.

The conventional PCB original fabricated as described above forms a circuit through an etching process according to the type of circuit to be applied.

However, such a conventional PCB has a problem that the PCB board is damaged by heat when used as a circuit board when heat is generated in the circuit itself, so that the material of the board must be manufactured using a ceramic substrate which is a material resistant to heat. There was a problem.

In particular, when a thermoelectric element is used for heat generation or cooling function of a cold / hot water heater or a refrigerator, since the thermoelectric element generates heat on its own, heat resistance of the substrate on which the thermoelectric element is attached is required.

A ceramic substrate is the most suitable material to satisfy these requirements, and in order to design a circuit on the ceramic substrate, a conductive material must be coated on one surface of the substrate to form a circuit.

To this end, metallization and brazing techniques are used to coat tungsten (W), copper (Cu), and nickel (Ni), but in the case of metallizing, the treatment temperature is 1200 In the case of ˜1400 ° C., the brazing technique is processed at a high temperature of 800 ° C. or higher, the manufacturing process is complicated, and the price of the paste used is very expensive, resulting in a decrease in productivity.

In addition, since solder is included in the soldering paste used for attaching thermoelectric semiconductor elements and the like, there is a problem that it cannot be used in an area for restricting the amount of heavy metal used.

Accordingly, the present invention has been made in view of the problems of the prior art, and an object thereof is to use an adhesive for forming a circuit for a hybrid IC by attaching a metal layer for forming a circuit pattern to a ceramic substrate using a strong adhesive. It is to provide a substrate manufacturing method for a hybrid IC.

1 is a process chart for explaining a hybrid IC substrate manufacturing method using an adhesive according to the present invention.

2 is a graph showing the relationship between temperature and adhesive strength.

3 is a graph showing the relationship between the standing period after bonding and the strength of bankruptcy.

In order to achieve the above object, the present invention comprises the steps of preparing a substrate using a ceramic material that is an insulating material; Applying an adhesive to the entire surface of the ceramic substrate; Attaching a metal plate; Etching the metal plate according to a circuit pattern; Forming a position to attach the thermoelectric semiconductor element to the substrate where the circuit is completed; Applying a conductive polymer to a position to which a thermoelectric semiconductor element of the substrate is attached; Plating a metal on the bonding portion of the thermoelectric semiconductor element attached to the substrate; It provides a substrate manufacturing method for a hybrid IC using an adhesive, comprising the step of positioning the thermoelectric semiconductor element to a position to which the thermoelectric semiconductor element of the substrate is attached and fixed using a soldering reflower.

In addition, the present invention comprises the steps of preparing a substrate using a ceramic material that is an insulating material to achieve the above object; Applying an adhesive according to a pattern to be formed using a pattern prepared in advance; Attaching a metal plate formed in a circuit form to a portion of the ceramic substrate to which an adhesive is applied; Forming a position to attach the thermoelectric semiconductor element to the substrate where the circuit is completed; Applying a conductive polymer to a position to which a thermoelectric semiconductor element of the substrate is attached; Plating a metal on the bonding portion of the thermoelectric semiconductor element attached to the substrate; The present invention also provides a method for manufacturing a hybrid IC substrate using an adhesive, wherein the thermoelectric semiconductor element is positioned at a position to which the thermoelectric semiconductor element of the substrate is attached and fixed using a soldering reflower.

The conductive polymer is 50 to 60% by weight polythiophene, 20 to 25% by weight organic solvent, 10 to 15% by weight polyurethane, 5 to 7% by weight polyacryl, 1 to 5% by weight It is composed of other additives including antifoaming agents and surface leveling agents.

In the step of attaching the metal plate on the adhesive is attached while applying a pressure of ¹ ~ 3kg / cm ² for 10 to 30 minutes while applying a heat of 150 ~ 200 ℃ temperature, the adhesive is nitrile-phenolic resin And any one of silicate-based adhesives.

The adhesive is a nitrile-phenolic resin-based adhesive is processed in the form of a tape, and in the case of using a silicate-based adhesive is applied to the ceramic substrate in the form of a circuit pattern by a silk printing method using a liquid adhesive.

The metal plate may be any one of copper and nickel, and in the case of copper, nickel plating or gold plating may be used thereon (for example, Cu + Ni / Cu + Ni + Au).

Plating the adhesive site of the thermoelectric semiconductor device with respect to the plating site; Etching the surface of the plating site to form an anchor hole; Washing the plating site; Imparting a palladium catalyst; Washing; The electroless plating method is performed by plating with any one of nickel plating and nickel / gold plating, thereby improving adhesion of the thermoelectric semiconductor device.

As described above, in the present invention, when manufacturing a hybrid IC substrate using a ceramic substrate, a metal plate forming a circuit with an adhesive is attached to the ceramic substrate, so that productivity is higher than that of a conventional metallizing method or a brazing method at a high temperature. The soldering paste containing the lead component is used to fix the thermoelectric semiconductor device instead of the conductive polymer, thereby providing an effect of not causing environmental pollution.

(Example)

Hereinafter, with reference to the accompanying drawings showing a preferred embodiment of the present invention described above in more detail.

1 is a process chart illustrating a method for manufacturing a hybrid IC substrate using an adhesive according to the present invention, FIG. 2 is a graph showing a relationship between temperature and adhesive strength, and FIG. 3 is a standing period after banking and bankruptcy. It is a graph showing the relationship with strength.

The present invention relates to forming a circuit pattern on a substrate and fixing an element in order to use a ceramic substrate having excellent insulation as a substrate of a hybrid IC. A method of forming a circuit pattern includes attaching and etching a metal film on the entire surface. There is a first method of forming and a second method of applying an adhesive in the form of a circuit and attaching a metal film to only that part.

In the first method, a substrate using a ceramic material, which is an insulating material, is prepared (S 5), and an adhesive is applied to the entire surface of the ceramic substrate (S 10).

Here, the adhesive used is a nitrile-phenolic resin (Nitril-Phenolic Resin) -based adhesive, is used in the form of a tape processed.

The adhesive in the form of a tape is attached onto the ceramic substrate, and a metal plate is attached thereto (S 11). The metal plate to be attached is a copper plate (Cu Plate) having a thickness of 100 to 600 μm.

After the copper plate is attached, gold (Au) is plated on nickel (Ni) or nickel (Ni) by electroplating or electroless plating in order to improve corrosion prevention and electrical conductivity of the copper plate.

In addition, the copper plate may maintain a uniform thickness since the copper plate processed to a uniform thickness in advance may be selected and attached to a copper plate having a suitable thickness for each use.

In addition, since nickel and gold are plated separately as described above, the electrical conductivity is increased to prevent corrosion, and the adhesion rate in the soldering process is maximized.

After attaching the metal plate as described above and plating nickel or gold as necessary, etching is performed to form a circuit pattern in the form of a circuit of the hybrid IC to be manufactured (S 12).

A hole is formed in the position where the thermoelectric semiconductor element is inserted into the substrate where the circuit is completed by etching (S 30), and the conductive polymer is applied to the substrate at the bonding position at the position where the thermoelectric semiconductor element is attached (S 31).

Then, a metal layer, that is, nickel (Ni) or gold (Au) having excellent conductivity is plated on the bonding portion of the thermoelectric semiconductor element (S 32).

Subsequently, the thermoelectric semiconductor element is placed on the substrate (S 33), the conductive polymer is melted by passing through the soldering reflower, and the thermoelectric semiconductor element is fixed to the substrate (S 34).

Here, the conductive polymer used in place of the soldering paste to fix the thermoelectric semiconductor device to the substrate is a 'conductive polymer composition, filed as an application No. 10-2000-0001764 on January 14, 2000, a method for forming a conductive film of a non-conductor using the same And using a conductive polymer disclosed in the 'plating method', the conductive polymer is made as follows.

The conductive polymer is 50 to 60% by weight of polythiophene, 20 to 25% by weight of organic solvent, 10 to 15% by weight of the first binder, and 5 to 7% by weight of And a second binder and other additives including 1 to 5% by weight of an antifoaming agent and a surface leveling agent.

The polythiophene is a component that imparts conductivity to the conductive polymer composition, and when the content is less than 50% by weight, the resistance value of the conductive film becomes very large (resistance value of the specimen is 10 ³ Ω or more). If the electroplating is not performed at, and the content is more than 60% by weight, the resistance value of the conductive film is 10 ³ Ω or less, so that good electroplating is achieved in the subsequent plating process, but the cost of the composition is increased. Therefore, the content of polythiophene is suitably set to 50 to 60 in weight%.

The organic solvent serves to dissolve the polythiophene and the binder to maintain the composition in a liquid phase, and when the content is less than 20% by weight, the organic solvent is too much, and the composition is applied to the substrate by one of brush painting, spray spraying, or dipping. When coating on the surface, the workability and uniformity of the coated conductive film are inferior and the thickness of the coated film is thick. If the content exceeds 25% by weight, the composition is too thin so that the thickness of the conductive film coated once It becomes so thin that a plating film of the desired thickness cannot be achieved quickly in subsequent plating processes. Therefore, the content of the organic solvent is suitably set at 20 to 25% by weight.

In the case of using a single binder, since the adhesive strength is low, two types of the first and second binders are mixed and used. 10 to 15% by weight of polyurethane (polyurethane) can be used as the first binder, when the content is less than 10% by weight, there is a problem that the coating film is peeled off because the adhesion is low, the content is more than 15% by weight In this case, since the content of the polythiophene and the organic solvent is relatively lowered, the resistance value of the conductive film is increased, so that electroplating is not performed well or the workability of the polymer is inferior.

As the second binder, 5 to 7% by weight of a polyacrylic resin may be used. When the content is less than 5% by weight based on the whole composition, there is a problem in that the adhesive strength is lowered as described above. When it exceeds 7 weight%, since electroconductivity falls, it is suitable to comprise in said 5-7 weight% range.

The other additives include a general antifoaming agent for removing bubbles of the mixed composition and a general surface leveling agent for smoothing the surface of the coated conductive film in a range of 1 to 5% by weight.

When the thermoelectric semiconductor device is fixed to the substrate using the conductive polymer as described above, there is an advantage in that it does not emit any environmental pollutants at all compared to the fixing using a soldering paste containing a conventional lead component.

In the second method, a substrate using a ceramic material as an insulating material is prepared (S 5), a circuit pattern to be formed on the ceramic substrate is prepared (S 20), and an adhesive is silk printed onto the ceramic substrate using the circuit pattern. The circuit is printed in the same manner as the method (S 21).

Here, the adhesive used is a silicate-based adhesive, which is an adhesive in the form of a liquid, and has a thickness of about 5 to 20 μm.

Then, the metal plate is processed and attached in the same form as the circuit pattern (S 22). The metal plate to be attached is a copper plate (Cu Plate) as in the first method, and has a thickness of 100 to 600 μm, and the attaching condition is 2 kg / for 25 to 55 minutes while applying heat at a temperature of 150 to 200 ° C. Attach with pressure of cm ² .

After the copper plate is attached, gold (Au) is plated on nickel (Ni) or nickel (Ni) by electroplating or electroless plating in order to improve corrosion prevention and electrical conductivity of the copper plate.

In addition, the copper plate may use a copper plate processed to a uniform thickness in advance, thereby maintaining a uniform thickness, and selecting and attaching a copper plate having an appropriate thickness for each use.

In addition, since nickel and gold are plated separately as described above, the electrical conductivity is increased to prevent corrosion, and the adhesion rate in the soldering process is maximized.

In the above-described process, a position at which the thermoelectric semiconductor element is attached is formed on the substrate on which the circuit is completed (S 30), and the conductive polymer is applied to the substrate at the adhesive position at the position at which the thermoelectric semiconductor element is attached (S 31).

Then, a metal layer, ie, nickel (Ni) plating having excellent conductivity or nickel is first plated on the bonding portion of the thermoelectric semiconductor device, and gold (Au) is again plated thereon using an electroless plating method (S 32).

Subsequently, the thermoelectric semiconductor element is placed on the substrate (S 33), and the conductive polymer is melted using a soldering reflower to fix the thermoelectric semiconductor element to the substrate (S 34).

Here, since the electronic device is fixed to the substrate by using a cream soldering paste containing lead (Pb), it causes environmental pollution and heavy metal contamination, and additional lead is leaked in the post-processing and drying process. Although there is a problem in that the productivity is reduced by the need for additional equipment required for the cleaning and drying process, in the present invention, instead of fixing the device by soldering using conventional solder, to fix the device using a conductive polymer Therefore, there is an advantage that productivity is improved because the existing environmental pollution problem or the addition of production equipment by the process addition does not occur.

On the other hand, in the process of attaching the metal plate using the adhesive, the relationship between the temperature, the adhesive strength, and the standing period and the broke strength after the adhesion is shown in Figs. 2 and 3, the adhesion temperature within the appropriate temperature range The higher the value is, the higher the adhesive strength is, and the longer the leaving period after the adhesion is, the higher the bankruptcy strength is.

The conditions for measuring the graphs of FIGS. 2 and 3 were measured at a rate of 30 mm per minute.

In addition, nickel, or nickel and gold plating on the terminal portion of the thermoelectric semiconductor element, that is, the portion to which the substrate is attached, maintains a good contact state with the substrate by plating using an electroless plating method. The plating method is performed as follows.

1. Cleaning

Ultrasonic cleaning is carried out for 30 seconds to 2 minutes using a solution of C-4000 50g / l, NaOH 20g / l and the balance water maintaining a temperature of about 50 ℃.

And wash it several times with water.

2. Etching

To form an anchor hole, a solution composed of hydrogen fluoride (HF): nitric acid (HNO ₃ ) = 4: 1 was diluted in 0 to 2 times of water and maintained at room temperature for 5 seconds to 1 minute.

Since the solution is a strong acid, a rapid progression and surface roughness are generated. In some cases, the concentration is lowered and the reaction time is lengthened to ensure uniformity of the anchor hole.

3. Cleaning

Ultrasonic cleaning and water washing at the same time

4. Pre-Dipping

In order to remove impurities in the anchor hole, hydrochloric acid (HCl) having a concentration of 30v / v% is maintained at room temperature for 10 to 30 seconds.

5. Palladium Catalyst

A process for imparting a palladium catalyst in order to improve nickel plating. A solution of AAP # 300 250cc / l, hydrochloric acid 250cc / l and the balance water is reacted for 3 to 7 minutes while maintaining the temperature at 30 to 50 ° C. .

The AAP # 300 is a chemical agent consisting of palladium chloride and hydrochloric acid.

6. Taxpayer

Of course, the temperature of 85 ~ 95 ℃ wash.

7. Plating the thermoelectric semiconductor element while stirring while maintaining a solution composed of 850S (A) 100cc / L, 850S (B) 100cc / L, H ₂ SO ₄ , and residual water at a temperature of 90 to 95 ° C. do. At this time, the content of the sulfuric acid (H ₂ SO ₄ ) is adjusted to maintain the acidity (pH) to 4.0 to 4.5 while plating.

Here, the 850S (A) and 850S (B) is a material composed of nickel lactate, potassium stannate, sodium phosphate, lactic acid and the like.

In addition, in order to increase the efficiency of electroless plating, electroless plating may be performed by applying an electric start.

As described above, nickel plating is applied to a terminal of a thermoelectric semiconductor device.

1. The electrical conductivity is improved, the thermoelectric efficiency is increased.

2. Abrasion of crystalline material can be prevented.

3. Excellent adhesive strength when soldering.

4. Lead (Pb), tin (Sn), bismuth (Bi), etc. are fused to each other after the soldering operation, the performance is lowered, and the chipping can be prevented in advance by performing nickel plating, and the thermoelectric performance can be improved. have.

According to the present invention made as described above, when manufacturing a hybrid IC substrate using a ceramic substrate, a metal plate forming a circuit with an adhesive is attached to the ceramic substrate, thereby increasing productivity compared to a metallization method or a brazing method at a high temperature. In addition, the soldering paste containing lead does not fix the thermoelectric semiconductor device, but does not fix the thermoelectric semiconductor device, thereby providing an effect of not causing environmental pollution. In the above, the present invention has been illustrated and described with reference to specific preferred embodiments, but the present invention is not limited to the above-described embodiments and the general knowledge in the technical field to which the present invention pertains without departing from the spirit of the present invention. Various changes and modifications will be made by those who possess.

Claims (10)

Preparing a substrate using a ceramic material which is an insulating material; Applying an adhesive to the entire surface of the ceramic substrate; Attaching a metal plate; Etching the metal plate according to a circuit pattern; Forming a position to attach the thermoelectric semiconductor element to the substrate where the circuit is completed; Applying a conductive polymer to a position to which a thermoelectric semiconductor element of the substrate is attached; Plating a metal on the bonding portion of the thermoelectric semiconductor element attached to the substrate; A method of manufacturing a substrate for a hybrid IC using an adhesive comprising a step of positioning the thermoelectric semiconductor element at a position to which the thermoelectric semiconductor element of the substrate is attached and fixing using a soldering reflower. Preparing a substrate using a ceramic material which is an insulating material; Applying an adhesive according to a pattern to be formed using a pattern prepared in advance; Attaching a metal plate formed in a circuit form to a portion of the ceramic substrate to which an adhesive is applied; Forming a position to attach the thermoelectric semiconductor element to the substrate where the circuit is completed; Applying a conductive polymer to a position to which a thermoelectric semiconductor element of the substrate is attached; Plating a metal on the bonding portion of the thermoelectric semiconductor element attached to the substrate; A method of manufacturing a substrate for a hybrid IC using an adhesive comprising a step of positioning the thermoelectric semiconductor element at a position to which the thermoelectric semiconductor element of the substrate is attached and fixing using a soldering reflower. The conductive polymer according to claim 1 or 2, wherein the conductive polymer is 50 to 60% by weight of polythiophene, 20 to 25% by weight of organic solvent, 10 to 15% by weight of polyurethane, and 5 to 7% by weight. A method of manufacturing a substrate for a hybrid IC using an adhesive, which is composed of polyacrylic and other additives including 1 to 5% by weight of an antifoaming agent and a surface leveling agent. The method of claim 1 or 2, wherein in the step of attaching the metal plate on the adhesive, the adhesive is applied while applying a pressure of 1 to ³ kg / cm ² for 10 to 30 minutes while applying heat at a temperature of 150 to 200 ° C. Hybrid IC board | substrate manufacturing method using adhesive. The method of manufacturing a substrate for a hybrid IC using an adhesive according to claim 1 or 2, wherein the adhesive is any one of nitrile-phenolic resin and silicate adhesives. The method of claim 1, wherein the adhesive is processed into a tape using a nitrile-phenolic resin adhesive. The method of claim 2, wherein the adhesive is a silicate-based liquid adhesive, which is applied to a ceramic substrate in a circuit pattern form by a silk printing method. The method of manufacturing a substrate for a hybrid IC using an adhesive according to claim 1 or 2, wherein the metal plate is any one of copper and nickel. The method of manufacturing a substrate for a hybrid IC using an adhesive according to claim 1 or 2, wherein the metal plate is made of copper, and any metal selected from nickel and gold is plated. The method according to claim 1 or 2, wherein the plating of the bonding site of the thermoelectric semiconductor device is performed on the plating site; Etching the surface of the plating site to form an anchor hole; Washing the plating site; Imparting a palladium catalyst; Washing; A method for manufacturing a hybrid IC substrate using an adhesive, comprising the step of plating with any one of nickel plating and nickel / gold plating by an electroless plating method.