KR100337065B1 - 스퍼터링 장치의 마그네트론 캐소드 - Google Patents
스퍼터링 장치의 마그네트론 캐소드 Download PDFInfo
- Publication number
- KR100337065B1 KR100337065B1 KR1019990054804A KR19990054804A KR100337065B1 KR 100337065 B1 KR100337065 B1 KR 100337065B1 KR 1019990054804 A KR1019990054804 A KR 1019990054804A KR 19990054804 A KR19990054804 A KR 19990054804A KR 100337065 B1 KR100337065 B1 KR 100337065B1
- Authority
- KR
- South Korea
- Prior art keywords
- magnet
- long side
- target
- units
- center
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 20
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 230000001186 cumulative effect Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 36
- 239000010409 thin film Substances 0.000 description 18
- 230000003628 erosive effect Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 230000007423 decrease Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32303399A JP4592852B2 (ja) | 1999-11-12 | 1999-11-12 | スパッタリング装置のマグネトロンカソード |
| JP99-323033 | 1999-11-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010049135A KR20010049135A (ko) | 2001-06-15 |
| KR100337065B1 true KR100337065B1 (ko) | 2002-05-16 |
Family
ID=18150374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990054804A KR100337065B1 (ko) | 1999-11-12 | 1999-12-03 | 스퍼터링 장치의 마그네트론 캐소드 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4592852B2 (zh) |
| KR (1) | KR100337065B1 (zh) |
| TW (1) | TW555872B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101264991B1 (ko) | 2010-03-25 | 2013-05-15 | 캐논 아네르바 가부시키가이샤 | 마그네트론 스퍼터링 장치 및 스퍼터링 방법 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4780972B2 (ja) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
| JP4959175B2 (ja) * | 2005-11-09 | 2012-06-20 | 株式会社アルバック | マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置 |
| JP4990521B2 (ja) * | 2005-12-08 | 2012-08-01 | 株式会社アルバック | マグネトロンスパッタ電極及びマグネトロンスパッタ電極を用いたスパッタリング装置 |
| JP5145020B2 (ja) * | 2007-12-18 | 2013-02-13 | 株式会社アルバック | 成膜装置及び成膜方法 |
| CN108559964A (zh) * | 2018-07-25 | 2018-09-21 | 衡阳舜达精工科技有限公司 | 一种磁控溅射阴极磁场布置结构及用于制备纳米碳薄膜的方法 |
| CN117413085A (zh) * | 2021-11-26 | 2024-01-16 | 株式会社爱发科 | 溅射装置 |
-
1999
- 1999-11-12 JP JP32303399A patent/JP4592852B2/ja not_active Expired - Lifetime
- 1999-11-30 TW TW088120855A patent/TW555872B/zh not_active IP Right Cessation
- 1999-12-03 KR KR1019990054804A patent/KR100337065B1/ko not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101264991B1 (ko) | 2010-03-25 | 2013-05-15 | 캐논 아네르바 가부시키가이샤 | 마그네트론 스퍼터링 장치 및 스퍼터링 방법 |
| KR101290915B1 (ko) | 2010-03-25 | 2013-07-29 | 캐논 아네르바 가부시키가이샤 | 마그네트론 스퍼터링 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4592852B2 (ja) | 2010-12-08 |
| TW555872B (en) | 2003-10-01 |
| KR20010049135A (ko) | 2001-06-15 |
| JP2001140069A (ja) | 2001-05-22 |
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