KR100328744B1 - Apparatus and method for forming AL2O3 on wafer - Google Patents

Abstract

The invention of, transferring the wafer and in the aluminum oxide film forming apparatus of the wafer with the transfer chamber having a plurality of mating surface, an oxide film of a wafer transferred from the transfer chamber (SiO ₂₎ relates to the aluminum oxide film forming apparatus of the wafer At least one pretreatment module for performing a pretreatment process to remove; At least one aluminum oxide film forming module for forming an aluminum oxide film (Al ₂ O ₃ ) on the wafer from which the oxide film has been removed; And at least one high temperature heat treatment module for performing a post-treatment process to increase the stability of the aluminum oxide film on the wafer on which the aluminum oxide film is formed. By employing the aluminum oxide film forming apparatus having such a structure, the aluminum oxide film can be automatically formed on the wafer.

Description

Apparatus and method for forming AL2O3 on wafer

The present invention relates to an aluminum oxide film forming apparatus for a wafer.

Capacitor thin film formation process used in the semiconductor process has been able to form SiO ₂ , Si ₃ N ₄ thin films using the traditional chemical vapor deposition (CVD) method, and recently tantalum oxide (Ta ₂ 0 ₅ ) CVD or physical vapor deposition (PVD) methods have been developed to form thin films.

However, an aluminum oxide film forming apparatus that can be applied to a semiconductor device manufacturing process using an aluminum oxide film has not been developed yet.

An object of the present invention is to provide an aluminum oxide film forming apparatus for a wafer capable of forming an aluminum oxide film on the wafer using atomic layer epitaxy.

1 is a schematic plan view of a first embodiment of an aluminum oxide film forming apparatus of a wafer according to the present invention;

Figure 2 is an exploded perspective view showing an extract of one of the process module of Figure 1,

3 is a cross-sectional view of the shower head plate of the process module of FIG.

4 is a schematic plan view of a second embodiment of an aluminum oxide film forming apparatus of a wafer according to the present invention;

5 is a schematic plan view of a third embodiment of an aluminum oxide film forming apparatus of a wafer according to the present invention;

6 is a schematic plan view of a fourth embodiment of an aluminum oxide film forming apparatus of a wafer according to the present invention;

7 is a schematic plan view of a fifth embodiment of an aluminum oxide film forming apparatus of a wafer according to the present invention;

<Code Description of Main Parts of Drawing>

1,2 ... Wafer 100 ... Hydrogen Annealing Module

110 ... Plasma Cleaning Module

120, 170, 180 ... aluminum oxide film forming module

130 ... high temperature heat treatment module 140 ... vacuum cassette module

150 ... cooling module 200 ... transfer chamber

210, 230 ... cassette box 220 ... aligner

In order to achieve the above object, the aluminum oxide film forming apparatus of the wafer according to the present invention, the transfer chamber 200 is a wafer (not shown) and a plurality of bonding surfaces to transfer the wafer; At least one pretreatment module installed on one coupling surface of the transfer chamber 200 to perform a pretreatment process of removing the oxide film (SiO ₂ ) of the wafer transferred by the robot of the transfer chamber 200. ; At least one aluminum is formed on the other mating surface of the transfer chamber 200 to form an aluminum oxide film (Al ₂ O ₃ ) on the wafer from which the oxide film transferred by the robot of the transfer chamber 200 is removed. An oxide film forming module; And at least one high temperature heat treatment module installed on another coupling surface of the transfer chamber 200 to perform a post-treatment process to increase the stability of the aluminum oxide film on the wafer on which the aluminum oxide film is formed. It is characterized by.

In addition, the pretreatment module is a hydrogen annealing module performed by annealing in a high temperature hydrogen gas atmosphere.

The pretreatment module is a plasma cleaning module that removes an oxide film formed on the wafer by using plasma.

In addition, the pretreatment process module is an HF vapor module that is performed by spraying the HF vapor.

The apparatus may further include a cooling module for cooling the wafer heat-treated in the high temperature heat treatment module.

Hereinafter, an embodiment of an aluminum oxide film forming apparatus for a wafer according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view of a first embodiment of a semiconductor aluminum oxide film forming apparatus according to the present invention. As shown in the drawing, the semiconductor aluminum oxide film forming apparatus includes a transfer chamber 200 in which a robot (not shown) is installed and six coupling surfaces are provided, and a process module coupled to each coupling surface of the transfer chamber 200. A vacuum cassette module 140 and a cooling module 150 are provided. The process module includes a hydrogen annealing module 100, a plasma cleaning module 110, a first aluminum oxide film forming module 120, and a high temperature heat treatment module 130. These process modules are coupled to the mating surface in a clustered manner. Here, the transfer chamber 200 may be equipped with a maximum of six modules, it is possible to mount more modules by changing the angle of the transfer chamber, for example octagonal.

The structure will be described by extracting one of the process modules. 2 and 3, the process module includes a reactor block 10 having a wafer (not shown) and a wafer transfer hole 15 through which a wafer enters and exits by a robot, and the reactor block 10. Shower head plate 20 is hinged by hinges (28,29). The shower head plate 20 covers the reactor block 10 to maintain a predetermined pressure inside the reactor block 10. The shower head plate 20 is provided with a diffusion plate 30 for injecting a reactor body, the diffusion plate 30 is located inside the reactor block 10.

The showerhead plate 20 is connected to a source of a reactor gas and an inert gas. In detail, the reactor block 10 is provided with a first connection pipe 11 and a second connection pipe 12 to which a reactor body is connected, and a third connection pipe 13 to which an inert gas is connected. It is. Each pipe 11, 12, 13 is connected to the first, second, and third connecting pipes 21, 22, 23 provided in the shower head plate 20 through the connecting portion 14. Further, a shield plate 25 and a buffer plate 27 made of a material such as alumina, aluminum, or stainless steel are provided inside the reactor block 10. In the structure as described above, the wafer is introduced into the reactor block 10 through the wafer transfer hole 15 and the long hole 26 of the shield plate 25 by a robot installed in the transfer chamber 200.

In this process module, the reactor body is connected to the reactor block in the diffusion plate 30 through the first connecting pipe 11 → the first connecting pipe 21 and the second connecting pipe 12 → the second connecting pipe 22. 10) It is sprayed inside. The inert gas is injected into the shower head plate 20 through the third connecting pipe 13 → the third connecting pipe 23. The injected inert gas is injected into the reactor block 10 through the flow path 32 formed radially from the center of the diffusion plate 30 and the nozzle 31 toward the inner wall surface of the reactor block 10. This inert gas has a boundary layer with the reactor body by allowing quick exhaust from the reactor block 10 to the exhaust system. In this way, the inert gas injected through the nozzle 31 may serve as a curtain separating the inner wall of the reactor body and the reactor block 10.

The process modules are classified and described as follows.

The vacuum cassette module 140 is a module for storing the transferred wafer 1 under vacuum, and uses a known one. Since the wafer 1 is exposed to the atmosphere in the cassette box 210, an oxide film (SiO ₂ ) is naturally formed on the surface thereof, and the vacuum cassette module 140 no longer forms an oxide film on the wafer 1. Do not

The hydrogen annealing module 100 is a pretreatment module for removing the oxide film (SiO ₂ ) formed on the wafer. The hydrogen annealing module 100 makes hydrogen (H ₂ ) introduced into the first and second connection pipes (11, 12, FIG. 2) at a high temperature to anneal the wafer (1) under such a high temperature hydrogen gas atmosphere to naturally To remove the oxide film formed. At this time, the temperature for annealing is 700 to 1200 degreeC, Preferably it is about 850 degreeC. In this case, in order to effectively remove the oxide film SiO ₂ , the pressure of the hydrogen gas flowing into the hydrogen annealing module 100 is controlled.

The plasma cleaning module 110 is a pretreatment module for removing the oxide film remaining on the wafer once again using plasma. The plasma cleaning module 110 makes the hydrogen introduced through the first and second connection pipes 11 and 12 (FIG. 1) into a radical state using plasma. These hydrogen radicals are adsorbed on the residual oxide film on the wafer surface and react. In this state, when a Florin-based corrosive gas, for example, NF ₃ gas is introduced and sprayed onto the wafer, the reaction with the oxide film is activated to more reliably remove the residual oxide film. At this time, a high frequency of 11 MHz to 15 MHz, preferably 13.56 MHz, or a microwave of 2 GHz to 3 GHz, preferably 2.45 GHz is used as a generation source of plasma for forming hydrogen radicals.

The first aluminum oxide film forming module 120 forms an aluminum oxide film on the wafer from which the oxide film is removed using a known atomic layer epitaxy. Epitaxy is a technique of forming a thin film by successive injection methods of two or more reactor bodies. The reactor bodies, inert gases, and reactor bodies sequentially sprayed onto the wafer through the first, second, and third connection pipes are formed on the wafer surface. The thin film is formed by the reaction at, and the formation of impurities by the gas phase reaction is prevented as much as possible. As a first reaction gas for forming an aluminum oxide film, TMA (TriMethylAluminum) or TEA (TriEthylAluminum) is used. On the other hand, the second reaction gas for the oxide film is at least one oxide gas selected from the group containing oxygen, such as water vapor (H ₂ O) or nitrogen oxides (N ₂ O) or ozone (O ₃ ). On the other hand, it is preferable that argon, nitrogen, helium or the like is used as the inert gas that is injected together between the first reaction gas and the second reaction gas.

The high temperature heat treatment module 130 is a module that performs a post-treatment process to increase the density while increasing the stabilization of the aluminum oxide film (Al ₂ O ₃ ) formed on the wafer. The post-treatment process performed in the high temperature heat treatment module 130 is performed at a high temperature of 700 ° C. or higher, and in this embodiment at a high temperature of 850 ° C. or higher, thereby improving the crystallinity of the aluminum oxide film, thereby improving stabilization and increasing density. Let's do it.

The cooling module 150 maintains a high temperature state of the wafer on which the aluminum oxide film is formed, and performs a cooling process of lowering the high temperature wafer to about 50 ° C.

Next, an aluminum oxide film forming method by the aluminum oxide film forming apparatus of the wafer having such a structure will be described.

When the robot installed in the transfer chamber 200 transfers the wafer accommodated in the cassette box 210 to the aligner 220, the aligner 220 accurately adjusts the position of the wafer 1 to the vacuum cassette module 140. Transfer to.

Next, the wafer 1 of the vacuum cassette module 140 is transferred to the hydrogen annealing module 100 through the wafer transfer hole 15 by the robot. A high temperature hydrogen gas atmosphere is formed in the hydrogen annealing module 100, and the oxide film SiO ₂ formed on the wafer is removed under such an atmosphere.

Next, the robot performs a transfer process of picking up the wafer through the wafer transfer hole 15 of the hydrogen annealing module 100 and transferring it to the plasma cleaning module 110, and the plasma cleaning module 110 performs the hydrogen annealing module 100. ) Removes the residual oxide film not removed from the hydrogen annealing module 100 by making the introduced hydrogen into a radical state using plasma.

Next, the robot performs a transfer process of pulling out from the plasma cleaning module 110 and transferring it to the first aluminum oxide film forming module 120. The first aluminum oxide film forming module 120 forms an aluminum oxide film on the wafer by a known atomic layer epitaxy method.

Next, the robot performs a transfer process of taking out the wafer from the first aluminum oxide film forming module 120 and transferring the wafer to the high temperature heat treatment module 130. The high temperature heat treatment module 130 improves the crystallinity of the aluminum oxide film by improving the crystallinity of the aluminum oxide film by making the inside at a high temperature of 700 ° C. or higher, and increases density.

In addition, the robot performs a transfer process of removing the wafer from the high temperature heat treatment module 130 and transferring the wafer to the cooling module 150, and the cooling module 150 cools the introduced wafer to finish the aluminum oxide film forming process. After that, the completed wafer 2 is transferred to another cassette box 230 by a robot and accommodated therein. Entry and exit of the wafer from each module described above is made through the wafer transfer hole 15 formed in each module.

Next, a second embodiment of the aluminum oxide film forming apparatus of the wafer of the present invention will be described with reference to FIG. Here, the same reference numerals as in FIG. 1 denote the same members having the same function.

As shown, the aluminum oxide film forming apparatus of the wafer has the same transfer chamber 200 as described in the first embodiment, a process module and a vacuum cassette module 140 coupled to respective mating surfaces of the transfer chamber 200. ), And a cooling module 150. The process module includes an HF vapor module 160, a plasma cleaning module 110, a first aluminum oxide film forming module 120, and a high temperature heat treatment module 130.

The second embodiment is distinguished from the first embodiment by using the HF vapor module 160 instead of the hydrogen annealing module 100 (FIG. 1).

In the HF vapor module 160, the oxide film formed by spraying the HF vapor on the transferred wafer 1 is etched and removed. The injection of this HF vaporizer is carried out at atmospheric pressure or low pressure.

Since the plasma cleaning module 110, the first aluminum oxide film forming module 120 and the high temperature heat treatment module 130 are the same as those used in the first embodiment, detailed description thereof will be omitted.

In the aluminum oxide film forming apparatus having such a structure, the robot of the transfer chamber 200 transfers the wafer 1 accommodated in the wafer cassette box 210 to the aligner 220 to align the positions. The aligned wafer 1 includes the vacuum cassette module 140, the HF vapor module 160, the plasma cleaning module 110, the first aluminum oxide film forming module 120, the high temperature heat treatment module 130, and the cooling module 150. While sequentially passing through the aluminum oxide film is formed on the wafer. The wafer 2 on which the aluminum oxide film is formed is housed in another cassette box 230.

Next, a third embodiment of the aluminum oxide film forming apparatus of the wafer of the present invention will be described with reference to FIG. Here, the same reference numerals as in FIGS. 1 and 4 denote the same members having the same functions.

As shown, the aluminum oxide film forming apparatus of the wafer has the same transfer chamber 200 as described in the first and second embodiments, process modules coupled to respective mating surfaces of the transfer chamber 200, and vacuum cassette modules. 140, a cooling module 150 is provided. The process module includes a hydrogen annealing module 100, a first aluminum oxide film forming module 120, a second aluminum oxide film forming module 170, and a high temperature heat treatment module 130. Here, two aluminum oxide film forming modules are employed, and aluminum oxide films having different physical structures may be formed by changing temperatures or pressures inside the module.

In the aluminum oxide film forming apparatus having such a structure, the robot of the transfer chamber 200 transfers the wafer 1 accommodated in the wafer cassette box 210 to the aligner 220 to align the positions, and arranges the aligned wafers ( 1) the vacuum cassette module 140, the hydrogen annealing module 100, the first aluminum oxide film forming module 120, the second aluminum oxide film forming module 170, the high temperature heat treatment module 130 and the cooling module 150 While going sequentially, an aluminum oxide film is formed on the wafer. The wafer 1 on which the aluminum oxide film is formed is housed in another cassette box 230.

Next, a fourth embodiment of the aluminum oxide film forming apparatus of the wafer of the present invention will be described with reference to FIG. Here, the same reference numerals as in Figs. 1, 4, and 5 denote the same members having the same functions.

As shown, the aluminum oxide film forming apparatus of the wafer has the same transfer chamber 200 as described in the first, second, and third embodiments, and a process module and a vacuum coupled to respective mating surfaces of the transfer chamber 200. The cassette module 140 and the cooling module 150 is provided. The process module includes a plasma cleaning module 110, a first aluminum oxide film forming module 120, a second aluminum oxide film forming module 170, and a high temperature heat treatment module 130.

In the aluminum oxide film forming apparatus having such a structure, the robot of the transfer chamber 200 transfers the wafer 1 accommodated in the wafer cassette box 210 to the aligner 220 to align the positions, and arranges the aligned wafers ( 1) through the plasma cleaning module 110, the first aluminum oxide film forming module 120, the second aluminum oxide film forming module 170, the high temperature heat treatment module 130 and the cooling module 150 in sequence to the aluminum on the wafer An oxide film is formed, and the completed wafer 2 is stored in another cassette box 230.

Next, a fifth embodiment of the wafer aluminum oxide film forming apparatus of the present invention will be described with reference to FIG. Here, the same reference numerals as in Figs. 1, 4, 5, and 6 indicate the same members having the same function.

As shown, the semiconductor aluminum oxide film forming apparatus includes the same transfer chamber 200 as described in the first, second, third and fourth embodiments, process modules coupled to respective coupling surfaces of the transfer chamber 200; The vacuum cassette module 140 and the cooling module 150 are provided. The process module includes a plasma cleaning module 110, a first aluminum oxide film forming module 120, a second aluminum oxide film forming module 170, and a third aluminum oxide film forming module 180.

In the aluminum oxide film forming apparatus having such a structure, the robot of the transfer chamber 200 transfers the wafer 1 accommodated in the wafer cassette box 210 to the aligner 220 to align the positions, and arranges the aligned wafers ( 1) the plasma cleaning module 110, the first aluminum oxide film forming module 120, the second aluminum oxide film forming module 170, the third aluminum oxide film forming module 180 and the cooling module 150 sequentially An aluminum oxide film is formed on the wafer, and the completed wafer 2 is housed in another cassette box 230.

In addition, the process module may be implemented by sequentially aligning the hydrogen annealing module 100, the first aluminum oxide film forming module 120, and the high temperature heat treatment module 130.

In addition, the plasma cleaning module 110, the first aluminum oxide film forming module 120, and the high temperature heat treatment module 130 may be arranged in sequence.

As described above, the aluminum oxide film forming apparatus may be implemented only by the pretreatment process module and the aluminum oxide film forming module, or may be implemented by the aftertreatment process module and the aluminum oxide film forming module only. In addition, the number of modules for pre- or post-treatment or the number of aluminum oxide film forming modules may be varied.

Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. will be.

As described above, according to the apparatus for forming an aluminum oxide film of a wafer according to the present invention, in forming an aluminum oxide film on a wafer, a pretreatment step and a post-treatment step may be performed together. Therefore, it is possible to automate the aluminum oxide film forming process has the effect of improving mass production and product reliability.

Claims (5)

A transfer chamber 200 having a plurality of joining surfaces and provided with a robot (not shown) for transferring a wafer; At least one pretreatment module coupled to one coupling surface of the transfer chamber 200 to perform a pretreatment process of removing an oxide film (SiO 2) of the wafer transferred by the robot of the transfer chamber 200; At least one aluminum oxide film forming module coupled to another coupling surface of the transfer chamber 200 to form an aluminum oxide film (Al2O3) on a wafer from which the oxide film transferred by the robot of the transfer chamber 200 is removed. ; And At least one high temperature heat treatment module coupled to another bonding surface of the transfer chamber 200 to perform a post-treatment process to increase the stability of the aluminum oxide film on the wafer on which the aluminum oxide film is formed. An aluminum oxide film forming apparatus for a wafer. The apparatus of claim 1, wherein the pretreatment module is a hydrogen annealing module that is annealed under a high temperature hydrogen gas atmosphere. The apparatus of claim 1, wherein the pretreatment module is a plasma cleaning module that removes an oxide film formed on the wafer using plasma. The apparatus of claim 1, wherein the pretreatment module is an HF wafer module that is formed by spraying an HF wafer. The apparatus of claim 1, further comprising a cooling module for cooling the wafer heat-treated in the high temperature heat treatment module.