KR100294063B1 - 개선된서브미크론기술을이용하여웨이퍼상의결함을결정하고처리하는방법 - Google Patents
개선된서브미크론기술을이용하여웨이퍼상의결함을결정하고처리하는방법 Download PDFInfo
- Publication number
- KR100294063B1 KR100294063B1 KR1019940006495A KR19940006495A KR100294063B1 KR 100294063 B1 KR100294063 B1 KR 100294063B1 KR 1019940006495 A KR1019940006495 A KR 1019940006495A KR 19940006495 A KR19940006495 A KR 19940006495A KR 100294063 B1 KR100294063 B1 KR 100294063B1
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- trenches
- crystal
- wafer
- steps
- Prior art date
Links
- 230000007547 defect Effects 0.000 title claims abstract description 101
- 235000012431 wafers Nutrition 0.000 title claims description 76
- 238000005516 engineering process Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 125
- 239000013078 crystal Substances 0.000 claims abstract description 84
- 230000008569 process Effects 0.000 claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 238000012360 testing method Methods 0.000 claims description 82
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000004220 aggregation Methods 0.000 claims 2
- 230000002776 aggregation Effects 0.000 claims 2
- 238000010998 test method Methods 0.000 claims 2
- 238000010924 continuous production Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 12
- 230000002411 adverse Effects 0.000 abstract description 8
- 238000004458 analytical method Methods 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 235000015220 hamburgers Nutrition 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/982—Varying orientation of devices in array
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4069593A | 1993-03-31 | 1993-03-31 | |
| US8/040,695 | 1993-03-31 | ||
| US08/040,695 | 1993-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940022775A KR940022775A (ko) | 1994-10-21 |
| KR100294063B1 true KR100294063B1 (ko) | 2001-10-24 |
Family
ID=21912412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940006495A KR100294063B1 (ko) | 1993-03-31 | 1994-03-30 | 개선된서브미크론기술을이용하여웨이퍼상의결함을결정하고처리하는방법 |
Country Status (5)
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10229174A (ja) * | 1997-02-18 | 1998-08-25 | Mitsubishi Electric Corp | 半導体記憶装置の製造方法 |
| US6452412B1 (en) | 1999-03-04 | 2002-09-17 | Advanced Micro Devices, Inc. | Drop-in test structure and methodology for characterizing an integrated circuit process flow and topography |
| US6268717B1 (en) | 1999-03-04 | 2001-07-31 | Advanced Micro Devices, Inc. | Semiconductor test structure with intentional partial defects and method of use |
| US6294397B1 (en) * | 1999-03-04 | 2001-09-25 | Advanced Micro Devices, Inc. | Drop-in test structure and abbreviated integrated circuit process flow for characterizing production integrated circuit process flow, topography, and equipment |
| US6297644B1 (en) | 1999-03-04 | 2001-10-02 | Advanced Micro Devices, Inc. | Multipurpose defect test structure with switchable voltage contrast capability and method of use |
| US6258437B1 (en) | 1999-03-31 | 2001-07-10 | Advanced Micro Devices, Inc. | Test structure and methodology for characterizing etching in an integrated circuit fabrication process |
| US6429452B1 (en) | 1999-08-17 | 2002-08-06 | Advanced Micro Devices, Inc. | Test structure and methodology for characterizing ion implantation in an integrated circuit fabrication process |
| US6740555B1 (en) * | 1999-09-29 | 2004-05-25 | Infineon Technologies Ag | Semiconductor structures and manufacturing methods |
| US6434503B1 (en) | 1999-12-30 | 2002-08-13 | Infineon Technologies Richmond, Lp | Automated creation of specific test programs from complex test programs |
| DE10010821A1 (de) * | 2000-02-29 | 2001-09-13 | Infineon Technologies Ag | Verfahren zur Erhöhung der Kapazität in einem Speichergraben und Grabenkondensator mit erhöhter Kapazität |
| US6617180B1 (en) | 2001-04-16 | 2003-09-09 | Taiwan Semiconductor Manufacturing Company | Test structure for detecting bridging of DRAM capacitors |
| JP3875047B2 (ja) * | 2001-06-22 | 2007-01-31 | シャープ株式会社 | 半導体基板の面方位依存性評価方法及びそれを用いた半導体装置 |
| US6576487B1 (en) | 2002-04-19 | 2003-06-10 | Advanced Micro Devices, Inc. | Method to distinguish an STI outer edge current component with an STI normal current component |
| TW556303B (en) * | 2002-10-25 | 2003-10-01 | Nanya Technology Corp | Test key of detecting whether the overlay of active area and memory cell structure of DRAM with vertical transistors is normal and test method of the same |
| US20060009011A1 (en) * | 2004-07-06 | 2006-01-12 | Gary Barrett | Method for recycling/reclaiming a monitor wafer |
| DE102004036971B4 (de) * | 2004-07-30 | 2009-07-30 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Bewertung lokaler elektrischer Eigenschaften in Halbleiterbauelementen |
| WO2006022946A1 (en) * | 2004-07-30 | 2006-03-02 | Advanced Micro Devices, Inc. | Technique for evaluating local electrical characteristics in semiconductor devices |
| US8061224B2 (en) * | 2008-05-06 | 2011-11-22 | Globalfoundries Singapore Pte. Ltd. | Method for performing a shelf lifetime acceleration test |
| DE102010026351B4 (de) * | 2010-07-07 | 2012-04-26 | Siltronic Ag | Verfahren und Vorrichtung zur Untersuchung einer Halbleiterscheibe |
| US8716037B2 (en) | 2010-12-14 | 2014-05-06 | International Business Machines Corporation | Measurement of CMOS device channel strain by X-ray diffraction |
| KR102046761B1 (ko) | 2013-01-14 | 2019-12-02 | 삼성전자 주식회사 | 비휘발성 메모리 장치 |
| US9799575B2 (en) | 2015-12-16 | 2017-10-24 | Pdf Solutions, Inc. | Integrated circuit containing DOEs of NCEM-enabled fill cells |
| US10199283B1 (en) | 2015-02-03 | 2019-02-05 | Pdf Solutions, Inc. | Method for processing a semiconductor wager using non-contact electrical measurements indicative of a resistance through a stitch, where such measurements are obtained by scanning a pad comprised of at least three parallel conductive stripes using a moving stage with beam deflection to account for motion of the stage |
| US9805994B1 (en) | 2015-02-03 | 2017-10-31 | Pdf Solutions, Inc. | Mesh-style NCEM pads, and process for making semiconductor dies, chips, and wafers using in-line measurements from such pads |
| US10593604B1 (en) | 2015-12-16 | 2020-03-17 | Pdf Solutions, Inc. | Process for making semiconductor dies, chips, and wafers using in-line measurements obtained from DOEs of NCEM-enabled fill cells |
| US10978438B1 (en) | 2015-12-16 | 2021-04-13 | Pdf Solutions, Inc. | IC with test structures and E-beam pads embedded within a contiguous standard cell area |
| US9627370B1 (en) | 2016-04-04 | 2017-04-18 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, GATE-short-configured, GATECNT-short-configured, and TS-short-configured, NCEM-enabled fill cells |
| US9905553B1 (en) | 2016-04-04 | 2018-02-27 | Pdf Solutions, Inc. | Integrated circuit containing standard logic cells and library-compatible, NCEM-enabled fill cells, including at least via-open-configured, AACNT-short-configured, GATECNT-short-configured, and metal-short-configured, NCEM-enabled fill cells |
| US9929063B1 (en) | 2016-04-04 | 2018-03-27 | Pdf Solutions, Inc. | Process for making an integrated circuit that includes NCEM-Enabled, tip-to-side gap-configured fill cells, with NCEM pads formed from at least three conductive stripes positioned between adjacent gates |
| US9748153B1 (en) | 2017-03-29 | 2017-08-29 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second does of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including tip-to-side short configure |
| US9773774B1 (en) | 2017-03-30 | 2017-09-26 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including chamfer short configured fill cells, and the second DOE including corner short configured fill cells |
| US9768083B1 (en) | 2017-06-27 | 2017-09-19 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including snake open configured fill cells |
| US9786649B1 (en) | 2017-06-27 | 2017-10-10 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including via open configured fill cells, and the second DOE including stitch open configured fill cells |
| US9865583B1 (en) | 2017-06-28 | 2018-01-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including snake open configured fill cells, and the second DOE including stitch open configured fill cells |
| US10096530B1 (en) | 2017-06-28 | 2018-10-09 | Pdf Solutions, Inc. | Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including merged-via open configured fill cells, and the second DOE including stitch open configured fill cells |
| CN113311309B (zh) * | 2021-07-30 | 2021-10-12 | 度亘激光技术（苏州）有限公司 | 半导体结构的覆盖层剥除方法及半导体结构失效分析方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3304594A (en) * | 1963-08-15 | 1967-02-21 | Motorola Inc | Method of making integrated circuit by controlled process |
| US3615464A (en) * | 1968-11-19 | 1971-10-26 | Ibm | Process of producing an array of integrated circuits on semiconductor substrate |
| US3751647A (en) * | 1971-09-22 | 1973-08-07 | Ibm | Semiconductor and integrated circuit device yield modeling |
| US3842491A (en) * | 1972-12-08 | 1974-10-22 | Ibm | Manufacture of assorted types of lsi devices on same wafer |
| DE2707612A1 (de) * | 1977-02-22 | 1978-08-24 | Siemens Ag | Verfahren zum herstellen von halbleitervorrichtungen |
| JPS54110787A (en) * | 1978-02-17 | 1979-08-30 | Nec Corp | Method and apparatus for semiconductor element |
| US4257825A (en) * | 1978-08-30 | 1981-03-24 | U.S. Philips Corporation | Method of manufacturing semiconductor devices having improvements in device reliability by thermally treating selectively implanted test figures in wafers |
| JPS55120164A (en) * | 1979-03-12 | 1980-09-16 | Fujitsu Ltd | Semiconductor device |
| FR2473789A1 (fr) * | 1980-01-09 | 1981-07-17 | Ibm France | Procedes et structures de test pour circuits integres a semi-conducteurs permettant la determination electrique de certaines tolerances lors des etapes photolithographiques. |
| US4386459A (en) * | 1980-07-11 | 1983-06-07 | Bell Telephone Laboratories, Incorporated | Electrical measurement of level-to-level misalignment in integrated circuits |
| JPS57121244A (en) * | 1981-01-21 | 1982-07-28 | Hitachi Ltd | Evaluating method for wafer |
| US4672314A (en) * | 1985-04-12 | 1987-06-09 | Rca Corporation | Comprehensive semiconductor test structure |
| DE3530578A1 (de) * | 1985-08-27 | 1987-03-05 | Siemens Ag | Struktur zur qualitaetspruefung einer substratscheibe aus halbleitermaterial |
| US4835466A (en) * | 1987-02-06 | 1989-05-30 | Fairchild Semiconductor Corporation | Apparatus and method for detecting spot defects in integrated circuits |
| JPH01161845A (ja) * | 1987-12-18 | 1989-06-26 | Hitachi Ltd | 半導体ウェハー試験方法 |
| US4855253A (en) * | 1988-01-29 | 1989-08-08 | Hewlett-Packard | Test method for random defects in electronic microstructures |
| JPH0444244A (ja) * | 1990-06-07 | 1992-02-14 | Mitsubishi Materials Corp | ウエーハの結晶欠陥検査装置 |
-
1994
- 1994-03-03 TW TW083101872A patent/TW248612B/zh active
- 1994-03-28 EP EP94104890A patent/EP0618615A1/en not_active Withdrawn
- 1994-03-30 KR KR1019940006495A patent/KR100294063B1/ko not_active IP Right Cessation
- 1994-03-30 JP JP6085475A patent/JPH06326167A/ja active Pending
- 1994-10-03 US US08/317,148 patent/US5576223A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5576223A (en) | 1996-11-19 |
| EP0618615A1 (en) | 1994-10-05 |
| TW248612B (US06244707-20010612-C00011.png) | 1995-06-01 |
| KR940022775A (ko) | 1994-10-21 |
| JPH06326167A (ja) | 1994-11-25 |
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