KR100289570B1 - 보조전극을 이용한 액츄에이터와 전원인가선의 연결방법 - Google Patents

보조전극을 이용한 액츄에이터와 전원인가선의 연결방법 Download PDF

Info

Publication number
KR100289570B1
KR100289570B1 KR1019980060603A KR19980060603A KR100289570B1 KR 100289570 B1 KR100289570 B1 KR 100289570B1 KR 1019980060603 A KR1019980060603 A KR 1019980060603A KR 19980060603 A KR19980060603 A KR 19980060603A KR 100289570 B1 KR100289570 B1 KR 100289570B1
Authority
KR
South Korea
Prior art keywords
actuator
auxiliary electrode
power supply
supply line
upper electrode
Prior art date
Application number
KR1019980060603A
Other languages
English (en)
Korean (ko)
Other versions
KR20000044120A (ko
Inventor
정명송
김준일
정재우
Original Assignee
이형도
삼성전기주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이형도, 삼성전기주식회사 filed Critical 이형도
Priority to KR1019980060603A priority Critical patent/KR100289570B1/ko
Priority to CNB991274059A priority patent/CN1148747C/zh
Publication of KR20000044120A publication Critical patent/KR20000044120A/ko
Priority to HK00108439A priority patent/HK1029213A1/xx
Application granted granted Critical
Publication of KR100289570B1 publication Critical patent/KR100289570B1/ko

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • H10N30/063Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/03Assembling devices that include piezoelectric or electrostrictive parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Signal Processing For Digital Recording And Reproducing (AREA)
KR1019980060603A 1998-12-30 1998-12-30 보조전극을 이용한 액츄에이터와 전원인가선의 연결방법 KR100289570B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019980060603A KR100289570B1 (ko) 1998-12-30 1998-12-30 보조전극을 이용한 액츄에이터와 전원인가선의 연결방법
CNB991274059A CN1148747C (zh) 1998-12-30 1999-12-29 盘记录介质的管理数据的方法
HK00108439A HK1029213A1 (en) 1998-12-30 2000-12-28 Method for managing data of disk recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980060603A KR100289570B1 (ko) 1998-12-30 1998-12-30 보조전극을 이용한 액츄에이터와 전원인가선의 연결방법

Publications (2)

Publication Number Publication Date
KR20000044120A KR20000044120A (ko) 2000-07-15
KR100289570B1 true KR100289570B1 (ko) 2001-06-01

Family

ID=19567369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980060603A KR100289570B1 (ko) 1998-12-30 1998-12-30 보조전극을 이용한 액츄에이터와 전원인가선의 연결방법

Country Status (3)

Country Link
KR (1) KR100289570B1 (xx)
CN (1) CN1148747C (xx)
HK (1) HK1029213A1 (xx)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050072037A (ko) * 2004-01-05 2005-07-08 삼성전자주식회사 광 디스크, 기록/재생 장치, 기록/재생 방법 및 그 방법을수행하는 프로그램이 기록된 컴퓨터 판독가능한 기록매체
KR100619023B1 (ko) * 2004-05-25 2006-08-31 삼성전자주식회사 광 기록 정보 저장 매체, 기록/재생 방법, 기록/재생 장치
US8285965B2 (en) * 2009-11-20 2012-10-09 Western Digital Technologies, Inc. Aligning data storage device partition to boundary of physical data sector
US9063838B1 (en) 2012-01-23 2015-06-23 Western Digital Technologies, Inc. Data storage device shifting data chunks of alignment zone relative to sector boundaries
US8996839B1 (en) 2012-01-23 2015-03-31 Western Digital Technologies, Inc. Data storage device aligning partition to boundary of sector when partition offset correlates with offset of write commands
CN105893172A (zh) * 2015-11-30 2016-08-24 乐视云计算有限公司 硬盘数据恢复方法及系统

Also Published As

Publication number Publication date
KR20000044120A (ko) 2000-07-15
CN1148747C (zh) 2004-05-05
CN1258913A (zh) 2000-07-05
HK1029213A1 (en) 2001-03-23

Similar Documents

Publication Publication Date Title
EP1020903B1 (en) A semiconductor device using a lead frame and its manufacturing method
CN100517680C (zh) 布线基板、半导体装置及显示模块
EP0827191A2 (en) Semiconductor device mounting structure
JPH11219420A (ja) Icカードモジュール、icカード及びそれらの製造方法
JP5865630B2 (ja) 電極構造、半導体素子、半導体装置、サーマルヘッドおよびサーマルプリンタ
EP1440470B1 (en) Method of wire bonding a microelectronic die
JP2001176904A (ja) 半導体装置及びその製造方法
KR100289570B1 (ko) 보조전극을 이용한 액츄에이터와 전원인가선의 연결방법
JP3550875B2 (ja) リードフレームとこれを用いた半導体装置
KR100546364B1 (ko) 유연성 필름을 이용한 반도체 패키지 및 그 제조방법
JP2000299339A (ja) 半導体装置の製造方法
JP2974840B2 (ja) 半導体素子の実装方法
JPH03231437A (ja) 突起電極形成方法
JPH10340925A (ja) 半導体装置およびその製造方法
JPS6318335B2 (xx)
JPH10321754A (ja) 半導体装置
KR0171099B1 (ko) 반도체 기판 범프 및 그 제조방법
JP2584730B2 (ja) 厚膜回路基板及びその製造方法
KR100327247B1 (ko) 플립칩 본딩법을 이용한 잉크젯 프린트 헤드와 전원 및 신호인가선의 연결방법
JPH07297524A (ja) Icカード用プリント配線板
JP2782374B2 (ja) 電子部品搭載装置及びその製造方法
JP2593646B2 (ja) 電子部品
US7413670B2 (en) Method for forming wiring on a substrate
JPS641076B2 (xx)
JP3401891B2 (ja) リードフレームの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080130

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee