KR100271767B1 - 플라즈마를 이용하는 반도체장치 제조설비 - Google Patents
플라즈마를 이용하는 반도체장치 제조설비 Download PDFInfo
- Publication number
- KR100271767B1 KR100271767B1 KR1019980021372A KR19980021372A KR100271767B1 KR 100271767 B1 KR100271767 B1 KR 100271767B1 KR 1019980021372 A KR1019980021372 A KR 1019980021372A KR 19980021372 A KR19980021372 A KR 19980021372A KR 100271767 B1 KR100271767 B1 KR 100271767B1
- Authority
- KR
- South Korea
- Prior art keywords
- cathode electrode
- cylindrical
- cathode
- plasma
- semiconductor device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980021372A KR100271767B1 (ko) | 1998-06-09 | 1998-06-09 | 플라즈마를 이용하는 반도체장치 제조설비 |
TW088100025A TW404146B (en) | 1998-06-09 | 1999-01-04 | Equipment for fabricating semiconductor device using plasma |
JP11010424A JP2000012472A (ja) | 1998-06-09 | 1999-01-19 | プラズマを利用する半導体装置製造設備 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980021372A KR100271767B1 (ko) | 1998-06-09 | 1998-06-09 | 플라즈마를 이용하는 반도체장치 제조설비 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000001227A KR20000001227A (ko) | 2000-01-15 |
KR100271767B1 true KR100271767B1 (ko) | 2001-02-01 |
Family
ID=19538796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980021372A KR100271767B1 (ko) | 1998-06-09 | 1998-06-09 | 플라즈마를 이용하는 반도체장치 제조설비 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000012472A (ja) |
KR (1) | KR100271767B1 (ja) |
TW (1) | TW404146B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100683653B1 (ko) * | 2000-06-14 | 2007-02-20 | 삼성에스디아이 주식회사 | 스퍼터링 장치용 캐소드 |
JP5052017B2 (ja) * | 2005-03-28 | 2012-10-17 | 京セラ株式会社 | プラズマ装置およびそれを用いた太陽電池素子の製造方法 |
KR100978754B1 (ko) | 2008-04-03 | 2010-08-30 | 주식회사 테스 | 플라즈마 처리 장치 |
US20120298302A1 (en) * | 2011-05-23 | 2012-11-29 | Yaomin Xia | Vacuum plasma pprocessing chamber with a wafer chuck facing downward above the plasma |
KR102161873B1 (ko) * | 2014-05-09 | 2020-10-06 | 에베 그룹 에. 탈너 게엠베하 | 기판의 플라즈마 처리 방법 및 장치 |
JP2021095609A (ja) * | 2019-12-18 | 2021-06-24 | キヤノントッキ株式会社 | 成膜装置、成膜方法及び電子デバイスの製造方法 |
-
1998
- 1998-06-09 KR KR1019980021372A patent/KR100271767B1/ko not_active IP Right Cessation
-
1999
- 1999-01-04 TW TW088100025A patent/TW404146B/zh not_active IP Right Cessation
- 1999-01-19 JP JP11010424A patent/JP2000012472A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TW404146B (en) | 2000-09-01 |
JP2000012472A (ja) | 2000-01-14 |
KR20000001227A (ko) | 2000-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090814 Year of fee payment: 10 |
|
LAPS | Lapse due to unpaid annual fee |