KR100266045B1 - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR100266045B1 KR100266045B1 KR1019920700778A KR920700778A KR100266045B1 KR 100266045 B1 KR100266045 B1 KR 100266045B1 KR 1019920700778 A KR1019920700778 A KR 1019920700778A KR 920700778 A KR920700778 A KR 920700778A KR 100266045 B1 KR100266045 B1 KR 100266045B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- ferroelectric
- oxygen
- electrode
- dielectric constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 76
- 238000009792 diffusion process Methods 0.000 claims abstract description 100
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 93
- 239000001301 oxygen Substances 0.000 claims abstract description 93
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000003990 capacitor Substances 0.000 claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 239000011574 phosphorus Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 230000002265 prevention Effects 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910002367 SrTiO Inorganic materials 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 6
- 229910052785 arsenic Inorganic materials 0.000 claims 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 6
- 229910052733 gallium Inorganic materials 0.000 claims 6
- 239000000203 mixture Substances 0.000 claims 3
- 239000011229 interlayer Substances 0.000 abstract description 34
- 238000000137 annealing Methods 0.000 abstract description 25
- 230000015654 memory Effects 0.000 abstract description 20
- 230000015572 biosynthetic process Effects 0.000 abstract description 11
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 110
- 239000010410 layer Substances 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 239000011521 glass Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 or the like Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20896890 | 1990-08-07 | ||
| JP90-208968 | 1990-08-07 | ||
| PCT/JP1991/001050 WO1992002955A1 (fr) | 1990-08-07 | 1991-08-06 | Dispositif a semi-conducteur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920702553A KR920702553A (ko) | 1992-09-04 |
| KR100266045B1 true KR100266045B1 (ko) | 2000-09-15 |
Family
ID=16565146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019920700778A Expired - Lifetime KR100266045B1 (ko) | 1990-08-07 | 1991-08-06 | 반도체장치 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0495991A4 (enExample) |
| KR (1) | KR100266045B1 (enExample) |
| TW (1) | TW224180B (enExample) |
| WO (1) | WO1992002955A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5719416A (en) * | 1991-12-13 | 1998-02-17 | Symetrix Corporation | Integrated circuit with layered superlattice material compound |
| US5468684A (en) * | 1991-12-13 | 1995-11-21 | Symetrix Corporation | Integrated circuit with layered superlattice material and method of fabricating same |
| WO1994010704A1 (en) * | 1992-10-23 | 1994-05-11 | Symetrix Corporation | Integrated circuit with layered superlattice material and method of fabricating same |
| CA2106713C (en) * | 1993-09-22 | 1999-06-01 | Ismail T. Emesh | Structure and method of making a capacitor for an integrated circuit |
| US5330931A (en) * | 1993-09-22 | 1994-07-19 | Northern Telecom Limited | Method of making a capacitor for an integrated circuit |
| JP3119997B2 (ja) * | 1994-06-21 | 2000-12-25 | 松下電子工業株式会社 | 半導体装置の製造方法 |
| JP3495955B2 (ja) * | 1999-03-26 | 2004-02-09 | シャープ株式会社 | 半導体メモリ装置及びその製造方法 |
| DE10109218A1 (de) | 2001-02-26 | 2002-06-27 | Infineon Technologies Ag | Verfahren zur Herstellung eines Speicherkondensators |
| KR100443466B1 (ko) * | 2002-02-14 | 2004-08-09 | (주)코디피아 | 가방 모서리 성형방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62276853A (ja) * | 1986-05-26 | 1987-12-01 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置 |
| JPH01251760A (ja) * | 1988-03-31 | 1989-10-06 | Seiko Epson Corp | 強誘電体記憶装置 |
| JPH02183569A (ja) * | 1989-01-10 | 1990-07-18 | Seiko Epson Corp | 強誘電体記憶装置 |
| JPH02186669A (ja) * | 1989-01-12 | 1990-07-20 | Seiko Epson Corp | 強誘電体集積回路装置 |
| JP2572649B2 (ja) * | 1989-01-26 | 1997-01-16 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
-
1991
- 1991-08-06 EP EP19910913670 patent/EP0495991A4/en not_active Withdrawn
- 1991-08-06 KR KR1019920700778A patent/KR100266045B1/ko not_active Expired - Lifetime
- 1991-08-06 WO PCT/JP1991/001050 patent/WO1992002955A1/ja not_active Ceased
- 1991-08-12 TW TW080106347A patent/TW224180B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1992002955A1 (fr) | 1992-02-20 |
| EP0495991A1 (en) | 1992-07-29 |
| TW224180B (enExample) | 1994-05-21 |
| EP0495991A4 (en) | 1992-10-28 |
| KR920702553A (ko) | 1992-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19920406 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| AMND | Amendment | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19960724 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19920406 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19990329 Patent event code: PE09021S01D |
|
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 19990930 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 19990329 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Patent event date: 19991230 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 19990930 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20000410 Appeal identifier: 1999101004861 Request date: 19991230 |
|
| AMND | Amendment | ||
| PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20000129 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 19991230 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 19990830 Patent event code: PB09011R02I Comment text: Amendment to Specification, etc. Patent event date: 19960724 Patent event code: PB09011R02I |
|
| B701 | Decision to grant | ||
| PB0701 | Decision of registration after re-examination before a trial |
Patent event date: 20000410 Comment text: Decision to Grant Registration Patent event code: PB07012S01D Patent event date: 20000309 Comment text: Transfer of Trial File for Re-examination before a Trial Patent event code: PB07011S01I |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20000620 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20000621 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration | ||
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