KR100265014B1 - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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KR100265014B1
KR100265014B1 KR1019970081168A KR19970081168A KR100265014B1 KR 100265014 B1 KR100265014 B1 KR 100265014B1 KR 1019970081168 A KR1019970081168 A KR 1019970081168A KR 19970081168 A KR19970081168 A KR 19970081168A KR 100265014 B1 KR100265014 B1 KR 100265014B1
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layer
photoresist
film
antireflection film
diffusion barrier
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KR1019970081168A
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Korean (ko)
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KR19990060922A (en
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심경진
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김영환
현대전자산업주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE: A fabrication method of semiconductor devices is provided to prevent a footing phenomenon of a photoresist pattern due to neutralization reaction between an alkali and a catalytic acid by using an anti-diffusion layer. CONSTITUTION: A conductive layer(12) and an anti-reflection layer(13) are sequentially formed on a semiconductor substrate(11). An anti-diffusion layer(100) is formed on the surface of the anti-reflection layer(13) by annealing at O2 atmosphere. After coating a photoresist layer(14) on the anti-reflection layer(13) formed the anti-diffusion layer(100), the photoresist layer(14) is selectively exposed using a reticle(15). At this time, a catalytic acid(16) and an alkali(17) are simultaneously generated at the exposed portion and the anti-reflection layer(13), respectively. Because of the anti-diffusion layer(100), the neutralization reaction between the alkali(17) and the catalytic acid(16) is not carried out.

Description

반도체 소자의 제조 방법Manufacturing Method of Semiconductor Device

본 발명은 반도체 소자의 제조 방법에 관한 것으로, 특히 노광 공정시 반사방지막으로부터 확산된 염기와 노광에 의해 생성된 촉매산과의 중화 반응에 의해 발생되는 감광막 패턴의 푸팅(footing) 현상을 방지할 수 있는 반도체 소자의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and in particular, to prevent footing of a photoresist pattern caused by a neutralization reaction between a base diffused from an antireflection film and a catalytic acid generated by exposure during an exposure process. A method for manufacturing a semiconductor device.

일반적으로, 반도체 소자의 제조 공정중 회로 패턴을 형성하기 위하여 감광물질을 이용한 포토리소그라피(photolithography) 공정 및 패터닝 공정을 실시하고 있다. 양호한 형상(profile)의 회로 패턴은 양호한 형상의 감광막 패턴에서 얻어진다. 감광막 패턴의 형상은 노광 공정에 따라 좌우되는데, 소자가 고집적화 되어감에 따라 노광 장비 및 기술적 한계로 양호한 형상의 감광막 패턴을 형성하기가 어렵다. 감광막 패턴의 형상은 노광 공정시 하부층으로부터의 반사광에 영향을 많이 받게 되는데, 이를 해결하기 위해 회로 패턴으로 사용되는 도전층상에 반사방지막을 적용하고 있다.In general, a photolithography process using a photosensitive material and a patterning process are performed to form a circuit pattern during a semiconductor device manufacturing process. A good profile circuit pattern is obtained in a good shape photoresist pattern. The shape of the photoresist pattern depends on the exposure process. As the device is highly integrated, it is difficult to form a photoresist pattern having a good shape due to exposure equipment and technical limitations. The shape of the photoresist pattern is affected by the reflected light from the lower layer during the exposure process. To solve this problem, an anti-reflection coating is applied on the conductive layer used as the circuit pattern.

도 1(a) 내지 도 1(c)는 종래 반도체 소자의 제조 방법을 설명하기 위한 소자의 단면도이다.1 (a) to 1 (c) are cross-sectional views of a device for explaining a method of manufacturing a conventional semiconductor device.

도 1(a)를 참조하면, 반도체 소자를 형성하기 위한 여러 요소가 형성된 구조의 기판(1)상에 도전층(2) 및 반사방지막(3)이 순차적으로 형성된다. 반사방지막(3)상에 감광막(4)을 도포한 후, 레티클(reticle; 5)을 이용한 노광 공정을 실시하여 감광막(4)을 선택적으로 노광 시킨다.Referring to FIG. 1A, a conductive layer 2 and an antireflection film 3 are sequentially formed on a substrate 1 having a structure in which various elements for forming a semiconductor device are formed. After the photoresist film 4 is applied onto the antireflection film 3, an exposure process using a reticle 5 is performed to selectively expose the photoresist film 4.

상기에서, 도전층(2)의 반사방지막(3)으로는 티타늄 나이트라이드(TiN)가 널리 사용된다. 노광 공정시 감광막(4)의 노광 되는 부분에는 촉매산(6)이 생성되고, 반사방지막(3)에는 염기(7)가 생성된다. 노광 공정동안 염기(7)가 감광막(4)쪽으로 확산되어, 확산된 염기(7)와 노광에 의해 생성된 촉매산(6)과의 중화 반응이 일어나게 된다. 이러한 중화 반응은 감광막(4)이 노광 되는 것을 저해하는 요소로 작용하게 된다.In the above, titanium nitride (TiN) is widely used as the antireflection film 3 of the conductive layer 2. The catalytic acid 6 is produced in the exposed part of the photosensitive film 4 during the exposure process, and the base 7 is produced in the antireflection film 3. During the exposure process, the base 7 is diffused toward the photosensitive film 4 so that a neutralization reaction between the diffused base 7 and the catalytic acid 6 produced by exposure occurs. This neutralization reaction acts as a factor that inhibits exposure of the photosensitive film 4.

도 1(b)를 참조하면, 현상공정으로 감광막(4)의 노광 부분을 제거하여 감광막 패턴(40)이 형성된다.Referring to FIG. 1B, a photosensitive film pattern 40 is formed by removing an exposed portion of the photosensitive film 4 by a developing process.

상기에서, 감광막 패턴(40)에는 푸팅(footing; 8)이 형성되어 형상이 불량하게 된다. 이러한 푸팅 현상은 노광 세기가 약한 부분 즉, 노광 지역과 비노광 지역의 경계부분에서 염기(7)와 촉매산(6)과의 중화 반응에 의해 원하는 만큼의 노광이 이루어지지 않은 부분에서 발생된다.In the above, a footing 8 is formed on the photoresist pattern 40, resulting in poor shape. This footing phenomenon occurs at a portion where the exposure intensity is weak, that is, at a portion where the exposure is not performed as much as desired by the neutralization reaction between the base 7 and the catalytic acid 6 at the boundary between the exposure region and the non-exposure region.

이와 같이, 불량한 형상의 감광막 패턴(40)을 식각 마스크로 하여 도전층(2)을 패터닝할 경우 도전층(2) 패턴이 불량해 지고, 배선의 단락(short)을 유발하는 등 문제가 발생되어 소자의 신뢰성을 저하시킬 뿐만 아니라 소자의 고집적화를 이룰 수 없다.As described above, when the conductive layer 2 is patterned using the poorly shaped photosensitive film pattern 40 as an etching mask, the pattern of the conductive layer 2 becomes poor, causing short circuits, and so on. Not only does it lower the reliability of the device, but also does not achieve high integration of the device.

따라서, 본 발명은 노광 공정시 반사방지막으로부터 확산된 염기와 노광에 의해 생성된 촉매산과의 중화 반응에 의해 발생되는 감광막 패턴의 푸팅 현상을 방지하여 소자의 신뢰성 향상 및 소자의 고집적화에 기여할 수 있는 반도체 소자의 제조 방법을 제공함에 그 목적이 있다.Accordingly, the present invention prevents the footing phenomenon of the photoresist pattern caused by the neutralization reaction between the base diffused from the anti-reflection film and the catalytic acid generated by the exposure during the exposure process, thereby improving the reliability of the device and the high integration of the semiconductor. Its purpose is to provide a method for manufacturing a device.

이러한 목적을 달성하기 위한 본 발명의 반도체 소자의 제조 방법은 반도체 소자를 형성하기 위한 여러 요소가 형성된 구조의 기판 상에 도전층 및 반사방지막을 순차적으로 형성한 후, 상기 반사방지막 표면부에 확산방지층을 형성하는 단계; 상기 확산방지층이 형성된 상기 반사방지막 상에 감광막을 도포한 후, 노광 공정을 실시하는 단계; 및 현상공정으로 상기 감광막의 선택된 부분을 제거하여 감광막 패턴을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.In the method of manufacturing a semiconductor device of the present invention for achieving the above object, a conductive layer and an antireflection film are sequentially formed on a substrate having a structure in which various elements are formed to form a semiconductor device, and then a diffusion barrier layer is formed on the surface of the antireflection film. Forming a; Applying a photoresist film on the antireflection film on which the diffusion barrier layer is formed, and then performing an exposure process; And forming a photoresist pattern by removing the selected portion of the photoresist in a developing process.

도 1(a) 내지 도 1(c)는 종래 반도체 소자의 제조 방법을 설명하기 위한 소자의 단면도.1 (a) to 1 (c) are cross-sectional views of a device for explaining a method of manufacturing a conventional semiconductor device.

도 2(a) 내지 도 2(c)는 본 발명의 실시 예에 의한 반도체 소자의 제조 방법을 설명하기 위한 소자의 단면도.2 (a) to 2 (c) are cross-sectional views of a device for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention.

＜도면의 주요 부분에 대한 부호의 설명＞<Description of the code | symbol about the principal part of drawing>

1 및 11: 기판 2 및 12: 도전층1 and 11: Substrate 2 and 12: conductive layer

3 및 13: 반사방지막 4 및 14: 감광막3 and 13: antireflection films 4 and 14: photoresist films

40 및 140: 감광막 패턴 5 및 15: 레티클40 and 140: photoresist pattern 5 and 15: reticle

6 및 16: 촉매산 7 및 17: 염기6 and 16: catalytic acids 7 and 17: base

8: 푸팅 100: 확산방지층8: Putting 100: diffusion barrier layer

이하, 본 발명을 첨부된 도면을 참조하여 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도 2(a) 내지 도 2(c)는 본 발명의 실시 예에 의한 반도체 소자의 제조 방법을 설명하기 위한 소자의 단면도이다.2 (a) to 2 (c) are cross-sectional views of devices for describing a method of manufacturing a semiconductor device according to an embodiment of the present invention.

도 2(a)를 참조하면, 반도체 소자를 형성하기 위한 여러 요소가 형성된 구조의 기판(11)상에 도전층(12) 및 반사방지막(13)이 순차적으로 형성된다. 반사방지막(13)을 반응로(furnace)에서 산소(O2) 분위기에서 열처리하여 반사방지막(13) 표면부에 확산방지층(100)이 형성된다.Referring to FIG. 2A, a conductive layer 12 and an antireflection film 13 are sequentially formed on a substrate 11 having various elements for forming a semiconductor device. The antireflection film 13 is heat-treated in an oxygen (O 2 ) atmosphere in a furnace to form a diffusion barrier layer 100 on the surface of the antireflection film 13.

상기에서, 산소 열처리는 약 30 분 동안 약 500℃의 온도에서 산소를 약 8slpm 정도 흘려 확산방지층(13)이 10 내지 20Å의 두께가 되게 한다. 도전층(12)의 반사방지막(13)으로는 티타늄 나이트라이드(TiN)가 널리 사용되며, 이 경우 확산방지층(100)은 산화 티타늄(TiO2)이 된다.In the above, the oxygen heat treatment flows about 8slpm of oxygen at a temperature of about 500 ° C. for about 30 minutes so that the diffusion barrier layer 13 has a thickness of 10 to 20 kPa. Titanium nitride (TiN) is widely used as the antireflection film 13 of the conductive layer 12, and in this case, the diffusion barrier layer 100 is titanium oxide (TiO 2 ).

도 2(b)를 참조하면, 확산방지층(100)이 형성된 반사방지막(13)상에 감광막(14)을 도포한 후, 레티클(15)을 이용한 노광 공정을 실시하여 감광막(14)을 선택적으로 노광 시킨다.Referring to FIG. 2 (b), after the photosensitive film 14 is coated on the antireflection film 13 having the diffusion barrier layer 100 formed thereon, an exposure process using the reticle 15 is performed to selectively select the photoresist film 14. It exposes.

상기에서, 노광 공정시 감광막(14)의 노광 되는 부분에는 촉매산(16)이 생성되고, 반사방지막(13)에는 염기(17)가 생성된다. 노광 공정동안 염기(17)는 감광막(14)쪽으로 확산되려고 하지만, 확산방지층(100)에 의해 확산이 저지되어 감광막(14)쪽으로 확산되지 못하여, 이로 인하여 염기(17)와 촉매산(16)과의 중화 반응이 일어나지 않게 된다. 따라서, 노광 세기가 약한 부분 즉, 노광 지역과 비노광 지역의 경계부분에도 원하는 만큼의 노광이 이루어지게 된다.In the above, the catalytic acid 16 is generated in the exposed portion of the photosensitive film 14 during the exposure process, and the base 17 is produced in the antireflection film 13. During the exposure process, the base 17 tries to diffuse toward the photosensitive film 14, but diffusion is prevented by the diffusion barrier layer 100 and thus cannot be diffused toward the photosensitive film 14, which causes the base 17 and the catalytic acid 16 to Of neutralization reaction does not occur. Therefore, exposure as much as desired is made to the part where the exposure intensity is weak, ie, the boundary between the exposure area and the non-exposure area.

도 2(c)를 참조하면, 현상공정으로 감광막(14)의 노광 부분을 제거하여 양호한 형상의 감광막 패턴(140)이 형성된다.Referring to FIG. 2C, an exposed portion of the photosensitive film 14 is removed by a developing process to form a photosensitive film pattern 140 having a good shape.

상술한 바와 같이, 본 발명은 반사방지막 상에 감광막을 도포하기 전에 반사방지막을 산소 열처리하여 반사방지막의 표면에 확산방지층을 형성하므로, 노광 공정시 반사방지막으로부터 확산되는 염기와 노광에 의해 생성된 촉매산과의 중화 반응에 의해 발생되는 감광막 패턴의 푸팅 현상을 방지하여 소자의 신뢰성 향상 및 소자의 고집적화에 기여할 수 있다.As described above, the present invention forms a diffusion barrier layer on the surface of the antireflection film by oxygen heat treatment of the antireflection film before coating the photoresist film on the antireflection film, so that the catalyst produced by the exposure and the base diffused from the antireflection film during the exposure process By preventing the footing phenomenon of the photosensitive film pattern generated by the neutralization reaction with acid can contribute to the improvement of the reliability of the device and the high integration of the device.

Claims (3)

반도체 소자를 형성하기 위한 여러 요소가 형성된 구조의 기판 상에 도전층 및 반사방지막을 순차적으로 형성한 후, 상기 반사방지막 표면부에 확산방지층을 형성하는 단계;Sequentially forming a conductive layer and an antireflection film on a substrate having a structure in which various elements for forming a semiconductor device are formed, and then forming a diffusion barrier layer on the surface of the antireflection film; 상기 확산방지층이 형성된 상기 반사방지막 상에 감광막을 도포한 후, 노광 공정을 실시하는 단계; 및Applying a photoresist film on the antireflection film on which the diffusion barrier layer is formed, and then performing an exposure process; And 현상공정으로 상기 감광막의 선택된 부분을 제거하여 감광막 패턴을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 제조 방법.And forming a photoresist pattern by removing the selected portion of the photoresist in a developing step. 제 1 항에 있어서, 상기 반사방지막은 티타늄 나이트라이드로 형성되고, 상기 확산방지층은 산소 열처리에 의해 산화 티타늄으로 형성되는 것을 특징으로 하는 반도체 소자의 제조 방법.The method of claim 1, wherein the anti-reflection film is formed of titanium nitride, and the diffusion barrier layer is formed of titanium oxide by oxygen heat treatment. 제 1 항 또는 제 2 항에 있어서, 상기 확산방지층은 약 500℃의 온도에서 산소를 약 8slpm 정도 흘려 약 30 분 동안 열처리하여 10 내지 20Å의 두께로 형성되는 것을 특징으로 하는 반도체 소자의 제조 방법.The method of claim 1, wherein the diffusion barrier layer is formed to a thickness of about 10 to about 20 microns by heat-treating oxygen for about 30 minutes at a temperature of about 500 ° C. for about 8 slps.
KR1019970081168A 1997-12-31 1997-12-31 Manufacturing Method of Semiconductor Device KR100265014B1 (en)

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KR100653977B1 (en) * 2000-06-29 2006-12-05 주식회사 하이닉스반도체 Micro pattern-forming method using base treatment in organic bottom anti-reflective coating process
JP4564186B2 (en) * 2001-02-16 2010-10-20 株式会社東芝 Pattern formation method
KR100391001B1 (en) * 2001-06-28 2003-07-12 주식회사 하이닉스반도체 Method for forming a metal line
KR100437614B1 (en) * 2001-12-22 2004-06-30 주식회사 하이닉스반도체 Method for forming metal interconnection line of semiconductor device
KR100842489B1 (en) * 2006-12-21 2008-07-01 동부일렉트로닉스 주식회사 Method for fabricating a metal wire
CN107785246B (en) * 2016-08-30 2022-10-14 联芯集成电路制造(厦门)有限公司 Method for ion implantation of substrate

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