KR100252997B1 - Laser diode - Google Patents

Laser diode Download PDF

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KR100252997B1
KR100252997B1 KR1019970079161A KR19970079161A KR100252997B1 KR 100252997 B1 KR100252997 B1 KR 100252997B1 KR 1019970079161 A KR1019970079161 A KR 1019970079161A KR 19970079161 A KR19970079161 A KR 19970079161A KR 100252997 B1 KR100252997 B1 KR 100252997B1
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South Korea
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thin film
film layer
laser diode
layer
gaas
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KR1019970079161A
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Korean (ko)
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KR19990058968A (en
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조인성
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구자홍
엘지전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: A laser diode is provided to improve thermal conducting characteristic of a capping layer and thereby increasing operating reliability of a laser diode by efficiently emitting heat generated at an active layer through the capping layer. CONSTITUTION: A laser diode comprises a capping layer including five layers. A first thin film layer(100) is made of a GaAs. A second thin film layer(110) made of a GaAs and an AlAs with a predetermined composition ratio is formed on the first thin film layer(100). The third thin film layer(120) made of an AlAs increases thermal conducting characteristic of the capping layer. The fourth thin film layer(130) is made of a GaAs and an AlAs with a composition ratio same as the second thin film layer(110). The fifth thin film layer(140) is made of a GaAs to form an ohmic contact.

Description

레이저 다이오드Laser diode

본 발명은 반도체 레이저 다이오드에 관한 것으로서, 특히 캐핑층의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor laser diodes, and more particularly to a method for producing a capping layer.

레이저 다이오드는 광원으로 광범위하게 응용되는 발광소자이다. 도1은 레이저 다이오드의 구조를 도시한 것으로서, BR(Buried Ridge)구조로 불리워지고 있다. 이 BR구조의 레이저 다이오드는 캐핑층과 전류차단층 및 활성층과 클래딩영역으로 구성되어 있는데, 활성층과 클래딩영역 부근에서 레이저광이 발광되어 동작한다. 이 레이저 다이오드에서 p형 캐핑층(Capping Layer)의 구성물질로서 단일 성분의 GaAs가 널리 사용되어지고 있다.The laser diode is a light emitting device widely applied as a light source. 1 shows the structure of a laser diode, which is called a BR (Buried Ridge) structure. This BR structured laser diode is composed of a capping layer, a current blocking layer, an active layer and a cladding region, and operates by emitting laser light in the vicinity of the active layer and the cladding region. In this laser diode, a single component GaAs is widely used as a constituent of a p-type capping layer.

이 캐핑층은 외부로부터 전원을 공급받아 활성층(Active Layer)에 전원을 공급하는 역할을 하며, 또 활성층에서 발생한 열을 외부에 방출하기 위하여 중간에서 열을 전달하는 역할을 수행한다.The capping layer receives power from the outside to supply power to the active layer, and transfers heat in the middle to release heat generated from the active layer to the outside.

그런데, 레이저 다이오드는 안정적으로 전원을 공급하려면, 캐핑층의 열전도 특성이 우수해야 한다. 캐핑층이 활성층(Active Layer)에서 발생하는 열을 효율적으로 외부로 방출해야 레이저 다이오드가 신뢰성있게 동작하고, 그 수명도 길어지는 것이다.By the way, in order to stably supply power, the laser diode should have excellent thermal conductivity of the capping layer. When the capping layer efficiently radiates heat generated from the active layer to the outside, the laser diode operates reliably and its life is long.

따라서, 본 발명은 이러한 캐핑층의 열전도특성을 개선하여 레이저 다이오드의 동작의 신뢰성을 높이는 데에 그 목적이 있다.Therefore, an object of the present invention is to improve the reliability of the operation of the laser diode by improving the thermal conductivity of the capping layer.

도1은 종래의 BR(Buried Ridge)구조의 레이저 다이오드를 도시한 도면.1 is a view showing a conventional laser diode of a BR (Buried Ridge) structure.

도2는 본 발명의 레이저 다이오드에서 캐핑층(Capping Layer)를 도시한 도면.Figure 2 shows a capping layer in the laser diode of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

100 : 제1박막층 110 : 제2박막층100: first thin film layer 110: second thin film layer

120 : 제3박막층 130 : 제4박막층120: third thin film layer 130: fourth thin film layer

140 : 제5박막층140: the fifth thin film layer

본 발명의 레이저 다이오드는 캐핑층의 구조가 5층으로 형성된 것이 특징이다. 즉, 본 발명은 도2에 도시된 것과 같이 GaAs와 AlAs 및 그 복합물이 5층으로 구성된 것이다.The laser diode of the present invention is characterized in that the capping layer has five layers. That is, in the present invention, as shown in Fig. 2, GaAs and AlAs and a composite thereof are composed of five layers.

본 발명의 레이저 다이오드를 구성하고 있는 제1박막층(100)은 GaAs로 구성되어 있다. 그리고, 제1박막층 위에 GaAs와 AlAs가 소정의 조성비로 이루어진 복합물이 제2박막층(110)을 이루고 있다. 제2박막층이 복합물로 구성된 이유는 전기적인 안정성을 확보하기 위함이다.The first thin film layer 100 constituting the laser diode of the present invention is composed of GaAs. The second thin film layer 110 is formed of a composite having GaAs and AlAs having a predetermined composition ratio on the first thin film layer. The reason why the second thin film layer is composed of a composite material is to secure electrical stability.

제3박막층(120)은 AlAs로 구성되어 있다. 이 제3박막층이 캐핑층의 열전도특성을 증가시키는 부분이다. GaAs의 열전도도는 44W/mK 인데 비해, AlAs는 91W/mK의 값을 가지는 것으로 측정되었다. 따라서, 이 제1박막층보다 두껍게 형성된 제3박막층이 캐핑층 전체의 열전도도를 높이는 것이다. 이 제3박막층의 두께는 캐핑층의 두께의 대부분을 차지할 정도로 두껍게 형성한다.The third thin film layer 120 is made of AlAs. This third thin film layer is a portion that increases the thermal conductivity of the capping layer. The thermal conductivity of GaAs was 44 W / mK, whereas AlAs was measured to have a value of 91 W / mK. Therefore, the third thin film layer formed thicker than the first thin film layer increases the thermal conductivity of the entire capping layer. The thickness of the third thin film layer is formed thick enough to occupy most of the thickness of the capping layer.

제4박막층(130)은 제2박막층과 동일한 조성비를 갖는 GaAs와 AlAs의 복합물로 구성된다. 제4박막층을 복합물로 구성하는 이유는 제2박막층을 복합물로 구성하는 이유와 같다. 그리고, 그 두께는 제2박막층과 비슷하게 형성한다.The fourth thin film layer 130 is composed of a composite of GaAs and AlAs having the same compositional ratio as the second thin film layer. The reason why the fourth thin film layer is composed of a composite is the same as that of the second thin film layer. And the thickness is formed similarly to a 2nd thin film layer.

제5박막층(140)은 제1박막층과 동일하게 GaAs로 구성된다. 그 이유는 추후 금속(metal)과 결합될 때, 전극형성이 용이하도록 오믹접촉을 이루게 함 때문이다.The fifth thin film layer 140 is made of GaAs in the same manner as the first thin film layer. The reason for this is that when combined with metal later, ohmic contact is made to facilitate electrode formation.

본 발명의 캐핑층의 형성방법은 레이저 다이오드 제조장비인 MOCVD 혹은, MBE로써 용이하게 제작할 수 있다.The capping layer forming method of the present invention can be easily manufactured by MOCVD or MBE, which is a laser diode manufacturing equipment.

본 발명은 종래의 레이저 다이오드에 형성된 단층의 캐핑층에 비해 열전도특성이 높다. 왜냐하면, AlAs가 GaAs에 비해 열전도도가 높기 때문이다. 그리고, 열전도도가 높아졌음에도 불구하고, 종래에 비해 접착성이 떨어지지 않는다. 왜냐하면, 캐핑층의 최외곽층은 종래와 동일한 GaAs로 구성되어 있기 때문이다. 따라서, 종래의 레이저 다이오드에 설치된 캐핑층에 비해 접착성과 전기적인 접촉성이 저하되지 않으면서, 종래의 캐핑층에 비해 열전도특성이 개선되는 장점이 있다.The present invention has a higher thermal conductivity than a single capping layer formed on a conventional laser diode. This is because AlAs has higher thermal conductivity than GaAs. And although thermal conductivity is high, adhesiveness does not fall compared with the past. This is because the outermost layer of the capping layer is made of the same GaAs as in the prior art. Therefore, compared with the capping layer provided in the conventional laser diode, the adhesiveness and the electrical contact are not deteriorated, and there is an advantage in that the thermal conductivity is improved in comparison with the conventional capping layer.

즉, 본 발명은 종래의 레이저 다이오드에 비해 전기적으로 안정된 전원을 공급할 수 있으며, 아울러 활성층에서 발생하는 열을 효과적으로 외부에 방출할 수 있어 레이저 다이오드의 신뢰성을 높여주는 효과가 있다.That is, the present invention can supply power that is electrically stable as compared with the conventional laser diode, and can effectively discharge heat generated in the active layer to the outside, thereby increasing the reliability of the laser diode.

Claims (5)

레이저 다이오드에 있어서, GaAs으로 이루어진 제1박막층; 상기 제1박막층 위에 GaAs와 AlAs가 소정의 조성비로 이루어진 제2박막층; 상기 제2박막층 위에 AlAs로 이루어진 제3박막층; 상기 제3박막층 위에 AlGa와 GaAs가 소정의 조성비로 이루어진 제4박막층; 그리고, 상기 제4박막층 위에 GaAs로 이루어진 제5박막층을 포함하여 이루어진 캐핑층으로 구성된 레이저 다이오드.A laser diode comprising: a first thin film layer made of GaAs; A second thin film layer including GaAs and AlAs having a predetermined composition ratio on the first thin film layer; A third thin film layer made of AlAs on the second thin film layer; A fourth thin film layer including AlGa and GaAs in a predetermined composition ratio on the third thin film layer; And a capping layer including a fifth thin film layer made of GaAs on the fourth thin film layer. 제1항에 있어서, 상기 제2박막층과 제4박막층의 조성비가 동일한 것을 특징으로 하는 레이저 다이오드.The laser diode of claim 1, wherein a composition ratio of the second thin film layer and the fourth thin film layer is the same. 제1항에 있어서, 상기 제3박막층의 두께가 상기 제1박막층보다 두껍게 형성된 것을 특징으로 하는 레이저 다이오드.The laser diode of claim 1, wherein a thickness of the third thin film layer is thicker than that of the first thin film layer. 제1항에 있어서, 상기 제1박막층과 제5박막층의 두께가 동일한 것을 특징으로 하는 레이저 다이오드.The laser diode according to claim 1, wherein the first thin film layer and the fifth thin film layer have the same thickness. 제1항에 있어서, 상기 제2박막층과 제4박막층의 두께가 동일한 것을 특징으로 하는 레이저 다이오드.The laser diode of claim 1, wherein the thicknesses of the second thin film layer and the fourth thin film layer are the same.
KR1019970079161A 1997-12-30 1997-12-30 Laser diode KR100252997B1 (en)

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