KR100252916B1 - Corrosion inhibiting method for aluminum alloy film - Google Patents

Corrosion inhibiting method for aluminum alloy film Download PDF

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KR100252916B1
KR100252916B1 KR1019970072490A KR19970072490A KR100252916B1 KR 100252916 B1 KR100252916 B1 KR 100252916B1 KR 1019970072490 A KR1019970072490 A KR 1019970072490A KR 19970072490 A KR19970072490 A KR 19970072490A KR 100252916 B1 KR100252916 B1 KR 100252916B1
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barrier layer
aluminum alloy
photoresist
alloy film
aluminum
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KR1019970072490A
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KR19990052947A (en
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윤복현
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
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  • General Chemical & Material Sciences (AREA)
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Abstract

PURPOSE: A method for preventing erosion of an aluminum alloy film is provided to prevent erosion of an aluminum wire by reducing the amount of polymer deposited at the side of an aluminum wire. CONSTITUTION: A method for preventing erosion of an aluminum alloy film deposits the first barrier layer(22) on a semiconductor substrate(21). An aluminum alloy film is deposited on the first barrier layer(22). The second barrier layer(24) is deposited on the aluminum alloy film. After photoresist is applied on the second barrier layer(24), it is patterned by exposure and development process. The second barrier layer(24), the aluminum alloy film and the first barrier layer(22) are selectively etched by plasma etch using BCl3/Cl2 gas using the patterned photoresist as a mask to form an aluminum wire(23a). At this time, Cl radical and polymer are generated at the side of the photoresist and the aluminum wire(23a). The photoresist is removed by half using half ashing process. Polymer formed at the side of the photoresist is removed by means of deionized rinse process. The remaining photoresist is completely removed by implanting O2.

Description

알루미늄 합금막의 부식방지방법Corrosion prevention method of aluminum alloy film

본 발명은 반도체 소자의 제조 공정에 관한 것으로, 특히 알루미늄 합금막의 부식을 방지하는데 적당한 알루미늄 합금막의 부식방지방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing process of a semiconductor device, and more particularly to a method for preventing corrosion of an aluminum alloy film suitable for preventing corrosion of an aluminum alloy film.

일반적으로 반도체 소자의 제조 공정에 있어서 포토레지스트(Photo Resist)를 이용한 공정은 집적회로(IC : Integrated Circuit)의 발달에 큰 영향을 주었다.In general, a process using a photo resist in the manufacturing process of a semiconductor device has a great influence on the development of an integrated circuit (IC).

즉, 미세회로 공정기술의 발달과 더불어 일정한 칩면적에 보다 많은 회로의 집적을 가능하게하여 칩의 고집적화 및 대용량화를 가능하게 하였다.That is, with the development of microcircuit process technology, it is possible to integrate more circuits in a certain chip area, thereby enabling high integration and large capacity of chips.

이와 같은 포토레지스트를 이용한 식각 공정은 알루미늄 합금막상에 원하는 포토레지스트 패턴을 형성하고, 포토레지스트 패턴을 마스크로 이용하여 알루미늄 합금막을 선택적으로 식각하는 것이다.In such an etching process using a photoresist, a desired photoresist pattern is formed on the aluminum alloy film, and the aluminum alloy film is selectively etched using the photoresist pattern as a mask.

이때, 후속공정을 진행하기에 앞서 남아 있는 포토레지스트 패턴을 제거하는데, 식각공정에 따른 잔여물인 미세 폴리머가 알루미늄 합금막에 어느 정도 남아 있어 이후 알루미늄 합금막의 표면에 부식물이 발생한다.At this time, the remaining photoresist pattern is removed before proceeding to the subsequent process, and the fine polymer, which remains as a result of the etching process, remains in the aluminum alloy film to some extent, and then a corrosive material is generated on the surface of the aluminum alloy film.

여기서 알루미늄 합금막은 전극배선 재료로서 소자의 고밀도화의 미세가공 기술의 최종 목표로 되어 있어 소자의 특성을 향상시키기 위해서는 상기와 같은 폴리머를 제거해야 한다.In this case, the aluminum alloy film is an electrode wiring material, which is the final target of the high-density microfabrication technology of the device, and thus, the above polymer must be removed to improve the device properties.

이하, 첨부된 도면을 참고하여 종래의 알루미늄 합금막의 부식방지방법을 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings will be described a corrosion prevention method of a conventional aluminum alloy film.

도 1a 내지 도 1d는 종래의 알루미늄 합금막의 부식방지방법을 나타낸 공정단면도이다.1A to 1D are cross-sectional views illustrating a method of preventing corrosion of a conventional aluminum alloy film.

도 1a에 도시한 바와같이 반도체 기판(11)상에 제 1 베리어층(Barrier Layer)(12)을 증착하고, 상기 제 1 베리어층(12)상에 알루미늄(Al) 합금막(13)을 증착한다.As shown in FIG. 1A, a first barrier layer 12 is deposited on the semiconductor substrate 11, and an aluminum (Al) alloy film 13 is deposited on the first barrier layer 12. do.

이어, 상기 알루미늄 합금막(13)상에 제 2 베리어층(14)을 증착하고, 상기 제 2 베리어층(14)상에 포토레지스트(15)를 도포한 후, 노광 및 현상공정으로 포토레지스트(15)를 패터닝(Patterning)한다.Subsequently, the second barrier layer 14 is deposited on the aluminum alloy layer 13, the photoresist 15 is coated on the second barrier layer 14, and then the photoresist ( Pattern 15).

도 1b에 도시한 바와같이 상기 패터닝된 포토레지스트(15)를 마스크로 이용하여 BCl3/Cl2가스를 이용한 이방성 식각으로 제 2 베리어층(14)과 알루미늄 합금막(13)과 제 1 베리어층(12)을 선택적으로 식각하여 알루미늄 배선(13a)을 형성한다.As shown in FIG. 1B, the second barrier layer 14, the aluminum alloy layer 13, and the first barrier layer are anisotropically etched using BCl 3 / Cl 2 gas using the patterned photoresist 15 as a mask. (12) is selectively etched to form the aluminum wiring 13a.

이때 상기 포토레지스트(15)와 알루미늄 배선(13a)의 표면에 Cl기(16)와 폴리머(17)가 발생한다.At this time, the Cl group 16 and the polymer 17 are generated on the surface of the photoresist 15 and the aluminum wiring 13a.

도 1c에 도시한 바와같이 상기 포토레지스트(15)를 제거한다. 이때 상기 포토레지스트(15) 제거공정에서 생기는 포토레지스트성 폴리머가 알루미늄 배선(13a)의 측면에 두껍게 증착된다.As shown in Fig. 1C, the photoresist 15 is removed. At this time, the photoresist polymer generated in the process of removing the photoresist 15 is thickly deposited on the side surface of the aluminum wiring 13a.

그리고 상기 알루미늄 배선(13a)의 측면에 잔존한 Cl기(16)가 알루미늄 배선(13a)의 알루미늄(Al)과 반응하여 부식이 발생한다.The Cl group 16 remaining on the side surface of the aluminum wiring 13a reacts with aluminum Al of the aluminum wiring 13a to generate corrosion.

도 1d에 도시한 바와같이 상기 Cl기(16)와 폴리머(17)를 제거하기 위하여 NMD-3 용액을 이용하여 현상처리 작업을 실시한다.As shown in FIG. 1D, a development treatment operation is performed using an NMD-3 solution to remove the Cl group 16 and the polymer 17.

이어, 상기 알루미늄 배선(13a)에 UVAS장비로 O3을 주입하여 상기 알루미늄 배선(13a)의 측면에 더 이상의 부식방지를 위한 부동태막으로 Al2O3막(18)을 형성한다.Subsequently, O 3 is injected into the aluminum wire 13a by UVAS equipment to form an Al 2 O 3 film 18 as a passivation film for further corrosion prevention on the side surface of the aluminum wire 13a.

그러나 상기와 같은 종래의 알루미늄 합금막의 부식방지방법에 있어서 현상처리액은 알루미늄과 화학반응이 가능함으로 현상처리액의 농도가 심하게 하면 알루미늄의 배선 폭이 줄어들어 알루미늄 저항에 문제가 발생한다.However, in the corrosion preventing method of the conventional aluminum alloy film as described above, since the developing solution is capable of chemical reaction with aluminum, if the concentration of the developing solution is high, the wiring width of the aluminum decreases, which causes a problem in aluminum resistance.

따라서 알루미늄 배선 저항의 문제 때문에 포토레지스트의 제거시 발생되는 폴리머의 완전한 제거가 어려우며, 알루미늄 배선의 측면의 Cl기의 제거율이 70%밖에 안되기 때문에 Cl기와 알루미늄이 반응하여 부동태막 형성전에 알루미늄 배선의 측면이 부식되어 소자의 신뢰성을 저하시키는 문제점이 있었다.Therefore, due to the problem of the resistance of the aluminum wiring, it is difficult to completely remove the polymer generated when the photoresist is removed. Since the Cl removal rate of the Cl group on the side of the aluminum wiring is only 70%, the Cl group and the aluminum react to form the side of the aluminum wiring before the passivation film is formed. This corrosion caused a problem of lowering the reliability of the device.

본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로 알루미늄 배선의 측면에 증착되는 폴리머의 양을 줄임으로써 알루미늄 배선의 부식을 방지하도록 한 알루미늄 합금막의 부식방지방법을 제공하는데 그 목적이 있다.An object of the present invention is to provide a method for preventing corrosion of an aluminum alloy film to prevent corrosion of aluminum wiring by reducing the amount of polymer deposited on the side of the aluminum wiring to solve the above problems.

도 1a 내지 도 1d는 종래의 알루미늄 합금막의 부식방지방법을 나타낸 공정단면도Figure 1a to 1d is a process cross-sectional view showing a corrosion prevention method of a conventional aluminum alloy film

도 2a 내지 도 2e는 본 발명에 의한 알루미늄 합금막의 부식방지방법을 나타낸 공정단면도2a to 2e is a process cross-sectional view showing a method for preventing corrosion of the aluminum alloy film according to the present invention.

도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings

21 : 반도체 기판 22 : 제 1 베리어층21 semiconductor substrate 22 first barrier layer

23a : 알루미늄 배선 24 : 제 2 베리어층23a: aluminum wiring 24: second barrier layer

25 : 포토레지스트 26 : Cl기25 photoresist 26 Cl group

27 : 폴리머27: polymer

상기와 같은 목적을 달성하기 위한 본 발명에 의한 알루미늄 합금막의 부식방지방법은 반도체 기판상에 제 1 베리어층, 알루미늄 합금막, 제 2 베리어층을 차례로 형성하는 단계와, 상기 제 2 베리어층상에 포토레지스트 패턴을 형성하는 단계와, 상기 포토레지스트 패턴을 마스크로 이용하여 상기 제 2 베리어층, 알루미늄 합금막, 제 1 베리어층을 선택적으로 식각하여 알루미늄 배선층을 형성하는 단계와, 상기 포토레지스트 패턴을 핼프 애싱에 의해 선택적으로 제거하는 단계와, 상기 알루미늄 배선층의 측면에 형성된 폴리머를 린스처리로 제거하는 단계와, 상기 잔존하는 포토레지스트 패턴을 제거하는 단계와, 그리고 상기 알루미늄 배선층 측면의 이물질을 현상공정으로 제거하는 단계를 포함하여 형성함을 특징으로 한다.Corrosion preventing method of the aluminum alloy film according to the present invention for achieving the above object comprises the steps of sequentially forming a first barrier layer, an aluminum alloy film, a second barrier layer on a semiconductor substrate, and the photo on the second barrier layer Forming a resist pattern, selectively etching the second barrier layer, the aluminum alloy layer, and the first barrier layer using the photoresist pattern as a mask, and forming an aluminum wiring layer; Selectively removing by ashing, removing the polymer formed on the side surface of the aluminum wiring layer by rinsing, removing the remaining photoresist pattern, and removing foreign substances on the side surface of the aluminum wiring layer by a developing process. It characterized by including the step of removing.

이하, 첨부된 도면을 참고하여 본 발명에 의한 알루미늄 합금막의 부식방지방법을 상세히 설명하면 다음과 같다.Hereinafter, a method for preventing corrosion of an aluminum alloy film according to the present invention with reference to the accompanying drawings in detail as follows.

도 2a 내지 도 2e는 본 발명에 의한 알루미늄 합금막의 부식방지방법을 나타낸 공정단면도이다.2a to 2e are process cross-sectional views showing a method for preventing corrosion of an aluminum alloy film according to the present invention.

도 2a에 도시한 바와같이 반도체 기판(21)상에 제 1 베리어층(22)을 증착하고, 상기 제 1 베리어층(22)상에 알루미늄 합금막(23)을 증착한다.As shown in FIG. 2A, the first barrier layer 22 is deposited on the semiconductor substrate 21, and the aluminum alloy film 23 is deposited on the first barrier layer 22.

이어, 상기 알루미늄 합금막(23)상에 제 2 베리어층(24)을 증착하고, 상기 제 2 베리어층(24)상에 포토레지스트(25)를 도포한 후, 노광 및 현상공정으로 포토레지스트(25)를 패터닝(Patterning)한다.Subsequently, the second barrier layer 24 is deposited on the aluminum alloy layer 23, the photoresist 25 is coated on the second barrier layer 24, and then the photoresist ( Pattern 25).

도 2b에 도시한 바와같이 상기 패터닝된 포토레지스트(25)를 마스크로 이용하여 BCl3/Cl2가스를 이용한 플라즈마 식각으로 제 2 베리어층(24)과 알루미늄 합금막(23)과 제 1 베리어층(22)을 선택적으로 식각하여 알루미늄 배선(23a)을 형성한다.As shown in FIG. 2B, the second barrier layer 24, the aluminum alloy layer 23, and the first barrier layer are formed by plasma etching using the BCl 3 / Cl 2 gas using the patterned photoresist 25 as a mask. The aluminum wirings 23a are formed by selectively etching the 22.

이때 상기 포토레지스트(25)와 상기 알루미늄 배선(23a)의 측면에 Cl기(26)와 폴리머(27)가 발생한다.At this time, the Cl group 26 and the polymer 27 are generated on the side surfaces of the photoresist 25 and the aluminum wiring 23a.

도 2c에 도시한 바와같이 핼프 애싱(Half Ashing)처리로 상기 포토레지스트(25)를 1/2만 제거한다.As shown in FIG. 2C, only half of the photoresist 25 is removed by a half ashing treatment.

여기서 상기 핼프 애싱공정에 의한 포토레지스트(25)의 제거시간이 줄어들어 알루미늄 배선(23a)의 측면에 증착되는 포토레지스트성 폴리머(27)가 포토레지스트(25)를 완전히 제거하는 것 보다 1/2로 줄어들게 한다.Here, the removal time of the photoresist 25 by the help ashing process is reduced, so that the photoresist polymer 27 deposited on the side surface of the aluminum wiring 23a is 1/2 of the total removal of the photoresist 25. To reduce.

도 2d에 도시한 바와같이 상기 포토레지스트(25)의 측면에 형성된 폴리머(27)를 DI(De Ionized) 린스로 제거한다.As shown in FIG. 2D, the polymer 27 formed on the side surface of the photoresist 25 is removed by DI (De Ionized) rinsing.

도 2e에 도시한 바와같이 UVAS장비로 O3을 주입하여 상기 잔류하는 포토레지스트(25)를 완전히 제거한다.As shown in FIG. 2E, O 3 is injected into the UVAS device to completely remove the remaining photoresist 25.

이어, 상기 알루미늄 배선(23a)의 측면에 형성된 Cl기(26)와 폴리머(27)를 현상처리로 완전히 제거한다.Subsequently, the Cl group 26 and the polymer 27 formed on the side surface of the aluminum wiring 23a are completely removed by developing.

이상에서 설명한 바와같이 본 발명에 의한 알루미늄 합금막의 부식방지방법에 있어서 다음과 같은 효과가 있다.As described above, the corrosion preventing method of the aluminum alloy film according to the present invention has the following effects.

첫째, 핼프 애싱처리를 함으로써 포토레지스트의 제거시 발생하는 폴리머의 양을 줄일 수 있기 때문에 알루미늄 배선의 측면에 증착되는 폴리머의 양을 줄일 수 있다.First, since the amount of polymer generated when the photoresist is removed by the help ashing treatment, the amount of polymer deposited on the side of the aluminum wiring can be reduced.

둘째, 알루미늄 배선의 측면에 증착되는 폴리머양이 줄어듦으로써 폴리머와 Cl기의 제거공정이 쉽기 때문에 부식방지능력을 향상시킬 수 있다.Second, since the amount of polymer deposited on the side of the aluminum wiring is reduced, the process of removing the polymer and Cl groups is easy, and thus the corrosion protection ability can be improved.

셋째, 핼프 애싱을 실시함으로써 포토레지스트의 표면에 부착되는 Cl기의 양을 줄일 수 있기 때문에 알루미늄과 Cl의 반응이 줄어들어 부식방지능력을 향상시킬 수 있다.Third, since the amount of Cl groups attached to the surface of the photoresist can be reduced by performing help ashing, the reaction between aluminum and Cl can be reduced, thereby improving the anti-corrosion ability.

Claims (3)

반도체 기판상에 제 1 베리어층, 알루미늄 합금막, 제 2 베리어층을 차례로 형성하는 단계;Sequentially forming a first barrier layer, an aluminum alloy film, and a second barrier layer on the semiconductor substrate; 상기 제 2 베리어층상에 포토레지스트 패턴을 형성하는 단계;Forming a photoresist pattern on the second barrier layer; 상기 포토레지스트 패턴을 마스크로 이용하여 상기 제 2 베리어층, 알루미늄 합금막, 제 1 베리어층을 선택적으로 식각하여 알루미늄 배선층을 형성하는 단계;Selectively etching the second barrier layer, the aluminum alloy layer, and the first barrier layer using the photoresist pattern as a mask to form an aluminum wiring layer; 상기 포토레지스트 패턴을 핼프 애싱에 의해 선택적으로 제거하는 단계;Selectively removing the photoresist pattern by help ashing; 상기 알루미늄 배선층의 측면에 형성된 폴리머를 린스처리로 제거하는 단계;Removing the polymer formed on the side surface of the aluminum wiring layer by a rinse treatment; 상기 잔존하는 포토레지스트 패턴을 제거하는 단계; 그리고 상기 알루미늄 배선층 측면의 이물질을 현상공정으로 제거하는 단계를 포함하여 형성함을 특징으로 하는 알루미늄 합금막의 부식방지방법.Removing the remaining photoresist pattern; And removing the foreign matter on the side surface of the aluminum wiring layer by a developing process. 제 1 항에 있어서,The method of claim 1, 상기 잔존하는 포토레지스트 패턴은 DUAS장비로 O3을 주입하여 제거하는 것을 특징으로 하는 알루미늄 합금막의 부식방지방법.Wherein the remaining photoresist pattern is removed by injecting O 3 into the DUAS device. 제 1 항에 있어서,The method of claim 1, 상기 포토레지스트 패턴을 핼프 애싱에 의해 1/2만 제거하는 것을 특징으로 하는 알루미늄 합금막의 부식방지방법.And removing only 1/2 of the photoresist pattern by help ashing.
KR1019970072490A 1997-12-23 1997-12-23 Corrosion inhibiting method for aluminum alloy film KR100252916B1 (en)

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