KR100248517B1 - 마이크로 코일의 제조방법 - Google Patents
마이크로 코일의 제조방법 Download PDFInfo
- Publication number
- KR100248517B1 KR100248517B1 KR1019970078332A KR19970078332A KR100248517B1 KR 100248517 B1 KR100248517 B1 KR 100248517B1 KR 1019970078332 A KR1019970078332 A KR 1019970078332A KR 19970078332 A KR19970078332 A KR 19970078332A KR 100248517 B1 KR100248517 B1 KR 100248517B1
- Authority
- KR
- South Korea
- Prior art keywords
- coil
- insulating layer
- layer
- plating
- metal layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000007747 plating Methods 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 238000000206 photolithography Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F5/00—Coils
- H01F5/003—Printed circuit coils
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
Abstract
Description
Claims (8)
- 기판과절연층을 소정의 진공증착에 의하여 형성하는 단계와,상기 기판 상에 금속층을 전착하는 단계와,시드 층으로서의 하지막을 소정의 두께로 증착하는 단계와,상기 하지막 상에 마이크로 코일의 도금시 몰드 역할을 할 수 있는 절연층 패턴을 형성하는 단계와,상기 절연층 전체에 걸쳐서 코일용 금속층을 증착하는 단계와,상기 절연층과 하지막을 제거하는 단계로 이루어지는 것을 특징으로 하는 마이크로 코일의 제조방법.
- 제 1 항에 있어서, 상기 하지막은 Cr/Cu 또는 Ti/Cu 중에서 선택된 어느 하나로 증착하는 것을 특징으로 하는 마이크로 코일의 제조방법.
- 제 1 항에 있어서, 상기 절연층 패턴은, 스핀코터에 의하여 도포되는 포토레지스트 또는 폴리이미드 중에서 선택된 어느 하나이며, 사진식각 공정으로 형성되는 것을 특징으로 하는 마이크로 코일의 제조방법.
- 제 1 항에 있어서, 상기 절연층 패턴은, 그 트랜치의 깊이가 20∼40㎛의 두께로 되도록 형성되는 것을 특징으로 하는 마이크로 코일의 제조방법.
- 제 1 항에 있어서, 상기 코일용 금속층으로서 구리 또는 알루미늄 중에서 선택된 어느 하나를 사용하여 증착하는 것을 특징으로 하는 마이크로 코일의 제조방법.
- 제 1 항에 있어서, 상기 코일용 금속층의 증착은, E-Beam법을 이용하여 이루어지는 것을 특징으로 하는 마이크로 코일의 제조방법.
- 제 1 항에 있어서, 상기 코일용 금속층의 증착은, Evaporation 법을 이용하여 이루어지는 것을 특징으로 하는 마이크로 코일의 제조방법.
- 제 1 항에 있어서, 상기 코일용 금속층의 증착은, 전류밀도 1∼2A/dm²의 도금조에서 행해지는 것을 특징으로 하는 마이크로 코일의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970078332A KR100248517B1 (ko) | 1997-12-30 | 1997-12-30 | 마이크로 코일의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970078332A KR100248517B1 (ko) | 1997-12-30 | 1997-12-30 | 마이크로 코일의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990058242A KR19990058242A (ko) | 1999-07-15 |
KR100248517B1 true KR100248517B1 (ko) | 2000-03-15 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970078332A KR100248517B1 (ko) | 1997-12-30 | 1997-12-30 | 마이크로 코일의 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100248517B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569908B2 (en) | 2006-02-08 | 2009-08-04 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100378541B1 (ko) * | 2001-06-27 | 2003-04-03 | 주식회사 하이닉스반도체 | 고효율의 코일 제조방법 |
-
1997
- 1997-12-30 KR KR1019970078332A patent/KR100248517B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569908B2 (en) | 2006-02-08 | 2009-08-04 | Samsung Electronics Co., Ltd. | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR19990058242A (ko) | 1999-07-15 |
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