KR100241534B1 - Method of forming anti-reflection film of semiconductor device - Google Patents
Method of forming anti-reflection film of semiconductor device Download PDFInfo
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- KR100241534B1 KR100241534B1 KR1019960074967A KR19960074967A KR100241534B1 KR 100241534 B1 KR100241534 B1 KR 100241534B1 KR 1019960074967 A KR1019960074967 A KR 1019960074967A KR 19960074967 A KR19960074967 A KR 19960074967A KR 100241534 B1 KR100241534 B1 KR 100241534B1
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Abstract
단차가 형성된 실리콘기판에서 금속층의 패터닝을 위한 사진공정시 발생하는 빛의 산란(Scattering)을 방지하기 위하여, 2 중으로 반사방지막을 형성하여 단차에서 발생하는 산란을 전반사 시킨다. 그 결과 산란으로 인한 나칭(Notching) 또는 디닝(Thinning)을 막아 소자의 수율과 품질을 향상시킨 반도체 소자의 반사방지막 형성방법이 개시된다.In order to prevent scattering of light generated during the photolithography process for patterning the metal layer on the silicon substrate on which the step is formed, a double antireflection film is formed to totally reflect the scattering generated in the step. As a result, a method of forming an antireflection film of a semiconductor device, which prevents notching or dining due to scattering and improves yield and quality of the device, is disclosed.
Description
본 발명은 반도체 소자의 반사방지막 형성방법에 관한 것으로, 특히 금속층을 패터닝하기 위한 사진공정시 표면단차에 의해 발생하는 빛의 산란을 방지할 수 있도록 한 반도체 소자의 반사방지막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an antireflection film of a semiconductor device, and more particularly, to a method for forming an antireflection film of a semiconductor device in order to prevent scattering of light generated by surface steps during a photolithography process for patterning a metal layer.
일반적으로 반도체 소자의 제조공정에서 금속층은 이중 또는 다중 구조로 형성되며, 알루미늄(Al)과 같은 금속배선 형태로 이루어진다. 그런데 금속은 표면 반사율이 매우 높기 때문에 금속층을 패터닝하기 위한 사진공정시 빛의 산란이 발생하여 금속층에 나칭(Notching) 및 디닝(Thinning) 문제가 일어난다. 이러한 문제는 반도체 소자가 고집적화됨에 따라 금속배선의 폭이 감소되기 때문에 더욱 심하게 나타난다. 그러므로 이를 방지하기 위하여 금속층상에 반사방지막을 형성한다.In general, in the process of manufacturing a semiconductor device, the metal layer is formed in a double or multiple structure, and has a metal wiring form such as aluminum (Al). However, since the metal has a very high surface reflectivity, light scattering occurs during the photolithography process for patterning the metal layer, thereby causing problems of notching and dining in the metal layer. This problem is exacerbated because the width of the metal wiring is reduced as the semiconductor device is highly integrated. Therefore, to prevent this, an antireflection film is formed on the metal layer.
종래 반도체 소자의 반사방지막 형성 방법을 제1도를 통하여 설명하면 다음과 같다.A conventional method for forming an antireflection film of a semiconductor device will be described below with reference to FIG. 1.
제1도에 도시된 바와같이 소자 제조 공정을 거쳐 단차(A)가 형성된 실리콘기판(1)상에 절연막(2), 금속층(3) 및 반사방지막(4)이 순차적으로 형성된다. 그리고 상기 반사방지막(4) 상부에 패터닝된 감광막(5)이 형성되고 금속층(3)의 패터닝을 위하여 사진공정을 실시한다. 이때 반사방지막(4)이 금속층(3)의 표면반사율을 30% 이하로 낮추어 정상파(Standing Wave)나 빛의 산란을 줄였으나 단차(A)로 인한 산란은 막지 못하여 나칭이나 디닝 문제가 발생한다.As shown in FIG. 1, an insulating film 2, a metal layer 3, and an antireflection film 4 are sequentially formed on the silicon substrate 1 on which the step A is formed through the device fabrication process. The patterned photoresist film 5 is formed on the anti-reflection film 4, and a photolithography process is performed to pattern the metal layer 3. At this time, the antireflection film 4 lowers the surface reflectivity of the metal layer 3 to 30% or less, thereby reducing standing waves or scattering of light.
따라서 본 발명은 소자의 단차로 인한 빛의 산란을 방지하기 위하여 굴절계수가 서로 다른 제1 및 제2반사방지막을 순차적으로 형성하여 빛의 전반사가 일어나도록 함으로서 상기 문제점을 해소할 수 있는 반도체 소자의 반사방지막 형성방법을 제공하는데 목적이 있다.Therefore, in order to prevent the above problem by total reflection of the light by sequentially forming the first and second anti-reflection film having different refractive indices in order to prevent light scattering due to the step of the device reflection of the semiconductor device An object of the present invention is to provide a method for forming a protective film.
상기 목적을 달성하기 위한 본 발명은 단차가 형성된 실리콘기판상에 금속층을 형성한 후 상기 금속층 표면의 반사율을 최소화시키기 위하여, 상기 금속층상에 질소가 함유된 화합물로 제1 및 제2반사방지막을 순차적으로 형성하되, 상기 제1반사방지막의 굴절률을 상기 제2반사방지막의 굴절률 보다 크게 한는 것을 특징으로 한다.In order to achieve the above object, the present invention sequentially forms the first and second anti-reflective films with a compound containing nitrogen on the metal layer in order to minimize the reflectance of the surface of the metal layer after forming the metal layer on the silicon substrate on which the step is formed. The refractive index of the first anti-reflection film is larger than the refractive index of the second anti-reflection film.
제1도는 종래 반도체 소자의 반사방지막 형성방법을 설명하기 위한 단면도.1 is a cross-sectional view for explaining a method of forming an antireflection film of a conventional semiconductor device.
제2도는 본 발명에 따른 반도체 소자의 반사방지막 형성방법을 설명하기 위한 단면도.2 is a cross-sectional view for explaining a method for forming an anti-reflection film of a semiconductor device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 및 11 : 실리콘기판 2 및 12 : 절연막1 and 11: silicon substrate 2 and 12 insulating film
3 및 13 : 금속층 4 : 반사방지막3 and 13: metal layer 4: antireflection film
14 및 15 : 제1및 제2반사방지막 5 및 16 : 감광막14 and 15: 1st and 2nd anti-reflective film 5 and 16: Photosensitive film
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
제2도는 본 발명에 따른 반도체 소자의 반사방지막 형성방법을 설명하기 위한 소자의 단면도이다.2 is a cross-sectional view of a device for explaining a method of forming an anti-reflection film of a semiconductor device according to the present invention.
제2도에 도시된 바와같이 소자 제조공정을 거쳐 단차(B)가 형성된 실리콘기판(11)상에 절연막(12) 및 금속층(13)을 순차적으로 형성한다. 그후 상기 금속층(13) 상부면에 질소(N)가 함유된 화합물로 제1 및 제2반사방지막(14 및 15)을 화학기상증착방법 또는 서퍼터링(Sputtering)방법으로 순차적으로 형성한 후 감광막(5) 패턴을 형성한다.As shown in FIG. 2, the insulating film 12 and the metal layer 13 are sequentially formed on the silicon substrate 11 having the step B formed through the device manufacturing process. After that, the first and second anti-reflection films 14 and 15 are sequentially formed by a chemical vapor deposition method or a sputtering method using a compound containing nitrogen (N) on the upper surface of the metal layer 13 and then a photosensitive film ( 5) Form a pattern.
상기에서, 반사방지막 역할을 더욱 개선시키기 위해 제1반사방지막(14)을 제2반사방지막(15) 보다 굴절률이 크도록 형성한다.In the above, in order to further improve the role of the antireflection film, the first antireflection film 14 is formed to have a larger refractive index than the second antireflection film 15.
제1 및 제2반사방지막(14 및 15)은 SixOvNz또는 TiXNV로 이루어지되, 다음과 같이 세가지 방법으로 굴절률이 다르게 형성할 수 있다.The first and second anti-reflection films 14 and 15 may be formed of Si x O v N z or Ti X N V , but refractive indexes may be formed in three ways as follows.
첫째, 제1반사방지막(14)은 SixOvNz로 이루어지고, 제2반사방지막(15)은 Six′Ov′Nz′로 이루어지되 제1반사방지막(14)의 z는 제2반사방지막(15)의 z′ 보다 큰 값을 갖도록 조정하여 제1반사방지막(14) 굴절률을 제2반사방지막(15) 보다 크게 한다.First, the first antireflection film 14 is made of Si x O v N z , and the second antireflection film 15 is made of Si x ′ O v ′ N z ′ , but z of the first antireflection film 14 is The refractive index of the first antireflection film 14 is made larger than the second antireflection film 15 by adjusting the second antireflection film 15 to have a value greater than z '.
둘째, 제1반사방지막(14)은 TiXNV로 이루어지고, 상기 제2반사방지막(15)은 TiX′NV′로 이루어지되 제1반사방지막(14)의 z는 제2반사방지막(15)의 z′ 보다 큰 값을 갖도록 조정하여 제1반사방지막(14) 굴절률을 제2반사방지막(15)보다 크게 한다.Second, the first anti-reflection film 14 is made of Ti X N V , the second anti-reflection film 15 is made of Ti X ' N V' , z of the first anti-reflection film 14 is a second anti-reflection film The refractive index of the first antireflection film 14 is made larger than the second antireflection film 15 by adjusting to have a value larger than z 'of (15).
셋째, 제1반사방지막(14)은 TiXNV로 이루어지고, 상기 제2반사방지막은 SixOvNz로 이루어지도록 형성하여 제1반사방지막(14)의 굴절률이 더 크도록 한다.Third, the first antireflection film 14 is made of Ti X N V , and the second antireflection film is made of Si x O v N z so that the refractive index of the first antireflection film 14 is larger.
반사방지막을 형성하는데 있어서 굴절계수가 큰 제1반사방지막(14)을 먼저 형성한 다음 굴절계수가 작은 제2반사방지막(15)을 형성한다. 이것은 빛이 굴절률이 큰 쪽에서 작은 쪽으로 이동시에는 전반사가 일어나는 성질을 이용한 것이다.In forming the antireflection film, a first antireflection film 14 having a large refractive index is formed first, followed by a second antireflection film 15 having a small refractive index. This is because the total reflection occurs when light moves from the larger refractive index to the smaller one.
상술한 바와같이 본 발명은 질소가 함유된 화합물로 이중구조의 반사방지막을 형성하고 또한, 질소의 함유 양을 조절하여 반사방지막의 굴절률을 조종 할수 있다.As described above, the present invention can form a double antireflection film with a compound containing nitrogen and control the refractive index of the antireflection film by adjusting the amount of nitrogen.
따라서, 본 발명은 빛의 산란을 효과적으로 방지하므로 빛의 산란으로 인한 나칭과 디닝을 방지하여 소자의 수율 증대와 품질 향상의 효과가 있다.Therefore, the present invention effectively prevents light scattering, thereby preventing naching and dining due to light scattering, thereby increasing the yield of the device and improving quality.
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| KR1019960074967A KR100241534B1 (en) | 1996-12-28 | 1996-12-28 | Method of forming anti-reflection film of semiconductor device |
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| KR1019960074967A KR100241534B1 (en) | 1996-12-28 | 1996-12-28 | Method of forming anti-reflection film of semiconductor device |
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| KR19980055731A KR19980055731A (en) | 1998-09-25 |
| KR100241534B1 true KR100241534B1 (en) | 2000-03-02 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165142A (en) * | 1987-12-22 | 1989-06-29 | Oki Electric Ind Co Ltd | Formation of wiring of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165142A (en) * | 1987-12-22 | 1989-06-29 | Oki Electric Ind Co Ltd | Formation of wiring of semiconductor device |
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