KR100238212B1 - Manufacturing method of semicondnctor device - Google Patents

Abstract

In the method of manufacturing a semiconductor device according to the present invention, an anti-reflection layer is additionally formed on a material layer to be patterned into a desired shape or formed of a material having a low reflectance property with respect to light used when exposing the material layer to be patterned. Thereafter, by depositing and exposing the first photoresist film, the first photoresist film can be patterned into a desired shape and left without removing the antireflective layer, thereby subsequent patterning process, i.e., in an exposure process using a second photoresist film. It is possible to prevent the light transmitted to the material layer from being reflected, thereby obtaining a second photoresist pattern having a desired shape.

Description

Manufacturing method of semicondnctor device

The present invention relates to a semiconductor device, and more particularly to a method for manufacturing a semiconductor device for forming a more precise pattern in the photolithography method.

In order to form a pattern during the manufacturing process of a semiconductor device, a photolithography method is used, which will be described in detail. A process of heat treating a semiconductor substrate on which a material layer is formed at a high temperature, cooling the semiconductor substrate, and forming the material layer Forming a photoresist film on the photoresist, soft baking the semiconductor substrate on which the photoresist film is formed, exposing using a mask and light of a shape to be formed on the material layer, and developing the photoresist film ( And then hard bake.

The light reflected by the lower film quality during the exposure process affects the precision of the patterned material layer. That is, the greater the reflectance of the lower film quality, the more the material layer is not patterned into the desired shape.

1A to 1D are cross-sectional views illustrating a semiconductor device manufacturing method according to the prior art.

Reference numeral 1 denotes a semiconductor substrate, 3 占 a a first material layer, 5 an anti reflection coating (ARC), 713 a photoresist film, 9 a second material layer, and 11 a first material layer. Three material layers are shown, respectively.

Referring to FIG. 1A, an antireflection layer 5 and a photoresist film 7 are sequentially deposited on the semiconductor substrate 1 on which the first material layer 3 is formed.

The anti-reflection layer 5 is to prevent the light transmitted to the first material layer 3 from reflecting in the opposite direction during the subsequent exposure process, thereby affecting the patterning of the photosensitive film 7. It is formed of a material having low reflectivity for light used during exposure, such as polysilicon, SiN, or SiON.

Referring to FIG. 1B, a process of patterning the photosensitive film 7 by performing an exposure and development process using a mask (not shown) for patterning the first material layer 3 into a desired shape is performed. The antireflection layer 5 and the first material layer 3 are etched using the photoresist film (not shown) as a mask, and the process of removing the antireflection layer 5 is sequentially performed.

Referring to FIG. 1C, a process of depositing a second material layer (not shown, patterned to 9 in a subsequent process) and a photoresist film (not shown) on the first material layer 3a, the second material layer Forming a second material layer 9 by exposing and developing using a mask (not shown) for patterning the film into a desired shape, and the first material layer 3a and the second material layer 9 are formed. The process of depositing the third material layer 11 and the photosensitive film 13 on the semiconductor substrate 1 is performed in order.

The second material layer 9 is formed using a material having a low reflectance property with respect to light used during exposure.

Referring to FIG. 1D, a cross-sectional view of the pattern of the photosensitive layer 13 after performing an exposure and development process using a mask for patterning the third material layer 11 into a desired shape is shown.

During exposure, the light transmitted to the first material layer 3a is reflected in the opposite direction so that the area A between the second material layer 9 in the photoresist layer is overexposed to pattern the solid line instead of the desired shape (dotted line display). do.

That is, while the second material layer 9 has antireflection properties during exposure, the first material layer 3a does not have antireflection properties, and thus, a desired pattern is not formed in a subsequent exposure process.

An object of the present invention is to provide a method of manufacturing a semiconductor device for preventing the phenomenon that the light used during exposure is reflected from the lower film quality and the photosensitive film is not patterned into a desired shape.

1A to 1D are cross-sectional views illustrating a semiconductor device manufacturing method according to the prior art.

2A to 2B are cross-sectional views illustrating a first embodiment of a method of manufacturing a semiconductor device according to the present invention.

3A to 3D are cross-sectional views illustrating a second embodiment of a method of manufacturing a semiconductor device according to the present invention.

4A to 4B are cross-sectional views illustrating a third embodiment of a method of manufacturing a semiconductor device according to the present invention.

In order to achieve the above object, a first embodiment of the present invention comprises the steps of depositing a first material layer and a second material layer on a semiconductor substrate; Sequentially depositing an antireflection layer and a photoresist film on the second material layer; Forming a patterned photoresist by exposing and developing using a mask for patterning the first material layer and the second material layer into a desired shape; Etching the anti-reflection layer / second material layer / first material layer using the patterned photoresist as a mask; And forming a third material layer on the entire surface of the semiconductor substrate without removing the anti-reflective layer.

The anti-reflection layer is preferably formed of a material having a low reflectance property with respect to light used during exposure.

In order to achieve the above object, a second embodiment of the present invention comprises the steps of depositing a first material layer, an anti-reflection layer, a second material layer and a photosensitive film on a semiconductor substrate; Forming a patterned photoresist by exposing and developing a mask for patterning the first material layer and the second material layer into a desired shape; Etching the second material layer / anti-reflection layer / first material layer using the patterned photoresist as a mask; And forming a third material layer on an entire surface of the semiconductor substrate on which the second material layer / anti-reflection layer / first material layer is formed.

Etching the third material layer to be left over the sidewalls of the second material layer / anti-reflective layer / first material layer and over the second material layer; Forming a fourth material layer on an entire surface of the semiconductor substrate on which the third material layer is formed; Patterning the fourth material layer to expose a predetermined region of the third material layer; Forming an antireflective layer along a surface of the patterned fourth material layer; And forming a fifth material layer on the entire surface of the semiconductor substrate on which the anti-reflection layer is formed.

In order to achieve the above object, a third embodiment of the present invention comprises the steps of depositing a first material layer and a second material layer on a semiconductor substrate; Sequentially depositing an antireflection layer and a photoresist film on the second material layer; Forming a patterned photoresist by exposing and developing a mask for patterning the first material layer and the second material layer into a desired shape; Etching the anti-reflection layer / second material layer / first material layer using the patterned photoresist as a mask; Removing the remaining antireflective layer; Forming a third material layer on an entire surface of the semiconductor substrate on which the second material layer / first material layer is formed; Etching the third material layer to be left over the sidewalls of the second material layer / first material layer and over the second material layer; Forming a fourth material layer on an entire surface of the semiconductor substrate on which the third material layer is formed; Patterning the fourth material layer to expose a predetermined region of the third material layer; And forming a fifth material layer on the entire surface of the semiconductor substrate on which the fourth material layer is formed.

Preferably, the third material layer and the fourth material layer are formed using a material having a low reflectance.

In the method of manufacturing a semiconductor device according to the present invention, an anti-reflection layer is additionally formed on a material layer to be patterned into a desired shape, or the material layer to be patterned is formed of a material having a low reflectance property with respect to light used during exposure. Thereafter, by depositing and exposing the first photoresist film, the first photoresist film can be patterned into a desired shape and left without removing the antireflective layer, thereby subsequent patterning process, i.e., in an exposure process using a second photoresist film. It is possible to prevent the light transmitted to the material layer from being reflected, thereby obtaining a second photoresist pattern having a desired shape.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

2A to 2B are cross-sectional views illustrating a first embodiment of a method of manufacturing a semiconductor device according to the present invention.

Reference numeral 21 is a semiconductor substrate, 23.23a is a first material layer, 25.25a is a second material layer, 27.27a is an anti-reflection coating (ARC), 29 is a photoresist film and 31 Each represents a third material layer.

Referring to FIG. 2A, an antireflection layer 27 and a photoresist film (not shown, patterned 29 in a subsequent process) on the semiconductor substrate 21 on which the first material layer 23 and the second material layer 25 are formed. Patterning the photoresist film 29 by performing an exposure and development process using a process of depositing N and a mask (not shown) for patterning the first material layer 23 and the second material layer 25 into a desired shape. ) To proceed.

The first material layer 23 is formed of a material having a high transmittance such as an oxide film or a nitride film, and the second material layer 25 is formed of a material having a high reflectance with respect to light used during exposure.

The anti-reflective layer 27 is additionally deposited to prevent the light transmitted to the first material layer 23 from reflecting in the opposite direction during exposure, so that the photoresist is not patterned into a desired shape. It is formed of a material having a low reflectance property with respect to light used during exposure, such as SiN or SiON.

Referring to FIG. 2B, the anti-reflection layer 27 / the second material layer 25 / the first material layer 23 is etched using the patterned photoresist 29 as a mask to prevent the anti-reflection layer 27a / second. Forming a material layer 25a / first material layer 23a, and forming a material on the semiconductor substrate 21 on which the anti-reflection layer 27a / second material layer 25a / first material layer 23a is formed. The process of forming the three material layers 31 is sequentially performed.

Subsequently, a photosensitive film (not shown) deposition and exposure process is performed to pattern the third material layer 31. If there is no antireflection layer 27a, the first material layer 23a and the second material during the exposure process are performed. Since the light transmitted to the material layer 25a is reflected in the opposite direction and the photoresist film is not patterned in a desired shape, the anti-reflection layer 27a is left on the second material layer 25a for the purpose of preventing this. Proceed with the process.

3A to 3D are cross-sectional views illustrating a second embodiment of a method of manufacturing a semiconductor device according to the present invention.

Reference numeral 41 is a semiconductor substrate, 43.43a is a first material layer, 45.45a.55 is an anti reflection coating (ARC), 47.47a is a second material layer, and 49 is a photoresist film. , 51 占 51a represents the third material layer, 53 represents the fourth material layer, and 57 represents the fifth material layer.

Referring to FIG. 3A, an anti-reflection layer 45, a second material layer 47 and a photoresist film (not shown, patterned to 49 in a subsequent process) on the semiconductor substrate 41 on which the first material layer 43 is formed. And then patterned the photoresist film 49 by performing an exposure and development process using a mask (not shown) for patterning the first material layer 43 and the second material layer 47 into a desired shape. Is formed.

The second material layer 47 is formed of a material having a high transmittance with respect to light used during exposure, such as an oxide film or a nitride film, and the first material layer 43 is formed of a material having high reflectance.

The anti-reflection layer 45 is additionally deposited to prevent the light transmitted to the first material layer 43 from reflecting in the opposite direction during the exposure process and affecting the patterning of the photoresist layer. It is formed of a material having low reflectivity for light used during exposure, such as SiON.

Referring to FIG. 3B, the second material layer 47 / antireflection layer 45 / first material layer 43 is etched using the patterned photoresist 49 as a mask to form a second material layer 47a /. Forming the anti-reflection layer 45a / first material layer 43a, and forming the first anti-reflection layer 45a / first material layer 43a on the entire surface of the semiconductor substrate 61 on which the second material layer 47a / anti-reflection layer 45a / first material layer 43a is formed. The process of forming the three material layers 51 is sequentially performed.

The third material layer 51 is formed of a material having a low reflectance property with respect to light used during exposure.

Referring to FIG. 3C, the third material layer 51 is disposed on the sidewalls of the second material layer 47a / antireflective layer 45a / first material layer 43a and on top of the second material layer 47a. The third material layer 51a is formed by etching to leave the same.

Referring to FIG. 3D, a process of forming a fourth material layer (not shown, patterned as 53 in a subsequent process) on the entire surface of the semiconductor substrate 41 on which the third material layer 51a is formed, the third Patterning the fourth material layer to form a fourth material layer 53 so that a predetermined region of the material layer 51a is exposed, and forming an anti-reflection layer 55 along the surface of the fourth material layer 53. And a process of forming the fifth material layer 57 on the entire surface of the semiconductor substrate 41 on which the anti-reflection layer 55 is formed.

The fourth material layer 53 is formed of a material having high reflectance.

Prior to forming the fifth material layer 57, an additional antireflection layer 55 is formed on the fourth material layer 53, for patterning the fifth material layer 57 in a subsequent process. In order to deposit a photoresist film (not shown) on the fifth material layer 57 and perform an exposure and development process, light transmitted to the fourth material layer 53 having high reflectance is reflected in the opposite direction. This is to prevent the phenomenon that the photoresist film is not patterned into a desired shape. In addition, the light is transmitted through the first material layer 43a and the second material layer 47a, which are formed on the sidewalls of the fourth material layer 53, the anti-reflection layer 55, the anti-reflection layer 45a and the second material. It is not reflected in the opposite direction by the three material layers 51a.

4A to 4B are cross-sectional views illustrating a third embodiment of a method of manufacturing a semiconductor device according to the present invention.

Reference numeral 61 is a semiconductor substrate, 63.63a is a first material layer, 65.65a is a second material layer, 67.67a is an antireflection layer (ARC), 69 is a photosensitive film, 71 is a third material. Layer, 73 represents a fourth layer of material and 75 represents a fifth layer of material, respectively.

Referring to FIG. 4A, a second material layer 65, an antireflection layer 67, and a photoresist film (not shown, patterned to 69 in a subsequent process) on the semiconductor substrate 61 on which the first material layer 63 is formed. And then patterned the photosensitive film 69 by performing an exposure and development process using a mask (not shown) for patterning the first material layer 63 and the second material layer 65 into a desired shape. Is formed.

The second material layer 65 is formed of a material having a high transmittance with respect to light used during exposure, such as an oxide film or a nitride film, and the first material layer 63 is formed of a material having high reflectance.

The anti-reflection layer 67 is additionally deposited to prevent the light transmitted to the second material layer 65 from reflecting in the opposite direction during the exposure process, thereby affecting the patterning of the photosensitive film. It is formed of a material having low reflectivity for light used during exposure, such as SiON.

Referring to FIG. 4B, the anti-reflection layer 67, the second material layer 65, and the first material layer 63 are etched using the patterned photoresist 69 as a mask, and then the second anti-reflection layer is removed. Forming a material layer 65a / first material layer 63a, forming a third material layer (not shown, patterned at 71 in a subsequent process) on the entire surface of the semiconductor substrate 61, Forming a third material layer 71 by etching the third material layer so as to remain on the sidewalls and the top of the second material layer 65a / first material layer 63a, wherein the third material layer 71 is formed. Forming a fourth material layer (not shown, patterned as 73 in a subsequent process) on the entire surface of the semiconductor substrate 61, and the fourth material layer to expose a predetermined region of the third material layer 71. Patterning the fourth material layer 73 to form a fourth material layer 73. The fifth material layer 75 is formed on the entire surface of the semiconductor substrate 41 on which the fourth material layer 73 is formed. Then it proceeds to the step of forming.

The third material layer 71 and the fourth material layer 73 are formed of a material having low reflectivity, which is then deposited on a photoresist film (not shown) to pattern the fifth material layer 75 in a subsequent process. And when the exposure process is performed, light transmitted to the first material layer 63a and the second material layer 65a is not reflected by the third material layer 71 so that the photosensitive film can be patterned into a desired shape. have.

The present invention is not limited to this, and it is apparent that many modifications are possible by those skilled in the art within the technical idea of the present invention.

As described above, the method for manufacturing a semiconductor device according to the present invention according to the present invention further provides an anti-reflection layer on a material layer to be patterned in a desired shape, or to light used for exposing the material layer to be patterned. After forming from a material having a low reflectance property, the first photoresist film may be patterned into a desired shape by depositing and exposing the first photoresist film, and the subsequent patterning process may be subsequently performed by leaving the anti-reflection layer without removing it. In the exposure process using the second photoresist film, the light transmitted to the material layer may be prevented from being reflected, thereby obtaining a second photoresist pattern having a desired shape.

Claims (2)

In the manufacturing process of a semiconductor device for forming a pattern by a photolithography method, Depositing a first material layer formed of a material having a high reflectance of light, an antireflection layer formed of a material having a low reflectance of light, a second material layer formed of a material having a high transmittance of light, and a photosensitive film on the semiconductor substrate ; Forming a patterned photoresist by exposing and developing a mask for patterning the first material layer and the second material layer into a desired shape; Etching the second material layer / anti-reflection layer / first material layer using the patterned photoresist as a mask; Forming a third material layer formed of a material having a low reflectance on the entire surface of the semiconductor substrate on which the second material layer / anti-reflection layer / first material layer is formed; Etching the third material layer to be left over the sidewalls of the second material layer / anti-reflective layer / first material layer and over the second material layer; Forming a fourth material layer on an entire surface of the semiconductor substrate on which the third material layer is formed; Patterning the fourth material layer to expose a predetermined region of the third material layer; Forming an antireflection layer formed of a material having a low reflectance of light along a surface of the patterned fourth material layer; And Forming a fifth material layer on an entire surface of the semiconductor substrate on which the anti-reflection layer is formed. In the manufacturing process of a semiconductor device for forming a pattern by a photolithography method, Sequentially depositing a first material layer formed of a material having a high reflectance of light and a second material layer formed of a material having a high transmittance of light on a semiconductor substrate; Sequentially depositing an anti-reflection layer and a photosensitive film formed of a material having a low reflectance of light on the second material layer; Forming a patterned photoresist by exposing and developing a mask for patterning the first material layer and the second material layer into a desired shape; Etching the anti-reflection layer / second material layer / first material layer using the patterned photoresist as a mask; Removing the remaining antireflective layer; Forming a third material layer formed of a material having a low reflectance on the entire surface of the semiconductor substrate on which the second material layer / first material layer is formed; Etching the third material layer to be left over the sidewalls of the second material layer / first material layer and over the second material layer; Forming a fourth material layer formed of a material having a low reflectance on the entire surface of the semiconductor substrate on which the third material layer is formed; Patterning the fourth material layer to expose a predetermined region of the third material layer; And And forming a fifth material layer on the entire surface of the semiconductor substrate on which the fourth material layer is formed.